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Part Manufacturer Description Datasheet Download Buy Part
LT1079CS Linear Technology IC QUAD OP-AMP, 150 uV OFFSET-MAX, PDSO, Operational Amplifier
LT1213AIJ8 Linear Technology IC DUAL OP-AMP, 150 uV OFFSET-MAX, CDIP8, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1028CS16 Linear Technology IC OP-AMP, 150 uV OFFSET-MAX, 75 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1113IS8 Linear Technology IC DUAL OP-AMP, 150 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1213AIN8 Linear Technology IC DUAL OP-AMP, 150 uV OFFSET-MAX, PDIP8, PLASTIC, DIP-8, Operational Amplifier
LT1028CS Linear Technology IC OP-AMP, 150 uV OFFSET-MAX, 75 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier

GS881Z36BGD-150 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
GS881Z36BGD-150

Abstract: IDT71V416L15PH GS74104AGJ-12 IDT71V67802S133BGG IDT71V416L15PHG GS84036AGT-100 GS882Z36BGB-200 GS8161Z36BGD-250 GS88236BGB-200 GS881Z36BGD-200
Text: -333 GS882Z36BB- 150 GS882Z36BGB- 150 GS881Z36BD- 150 GS881Z36BGD-150 GS880Z36BT- 150 GS880Z36BGT- 150 GS882Z36BB- 150 GS882Z36BGB- 150 GS881Z36BD- 150 GS881Z36BGD-150 GS880Z36BT- 150 GS880Z36BGT- 150 GS882Z36BB- 150 GS882Z36BGB- 150 GS881Z36BD- 150 GS881Z36BGD-150 GS880Z36BT- 150 GS880Z36BGT- 150 GS882Z36BB-200 GS882Z36BGB-200 GS881Z36BD , -200 GS880Z36BT-200 GS880Z36BGT-200 GS882Z36BB- 150 GS882Z36BGB- 150 GS881Z36BD- 150 GS881Z36BGD-150 , GS882Z36BB- 150 GS882Z36BGB- 150 GS881Z36BD- 150 GS881Z36BGD-150 GS880Z36BT- 150 GS880Z36BGT- 150 GS882Z36BB- 150


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PDF IDT71P72604S200BQ IDT71P72604S200BQG IDT71P72604S250BQ IDT71P72604S250BQG IDT71P72804S167BQ IDT71P72804S167BQG IDT71P72804S200BQ IDT71P72804S200BQG IDT71P72804S250BQ IDT71P72804S250BQG GS881Z36BGD-150 IDT71V416L15PH GS74104AGJ-12 IDT71V67802S133BGG IDT71V416L15PHG GS84036AGT-100 GS882Z36BGB-200 GS8161Z36BGD-250 GS88236BGB-200 GS881Z36BGD-200
IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E IS61QDB22M36 167ML IS61NLP25636A-200TQL IS61LV5128L-12T GS8662Q36E-167
Text: -6.5 GS882Z36BB- 150 # GS882Z36BGB- 150 # GS881Z36BD- 150 # GS881Z36BGD-150 # GS880FZ36BT-7.5 GS880FZ36BGT , -250 GS8662R18GE-250 GS8662R18E-300 GS8662R18E-300 GS8662R18GE-300 GS8662R18GE-300 GS816218BB- 150 # GS8160F18BT-7.5 GS816218BB- 150 # GS8160F18BT-7.5 GS816218BB- 150 # GS8160F18BT-7.5 GS816218BB- 150 # , -6.5 GS8160F18BGT-6.5 GS816218BB- 150 # GS816218BGB- 150 # GS816118BD- 150 # GS816118BGD- 150 # GS8160F18BT-7.5 GS8160F18BGT-7.5 GS816218BB- 150 # GS816218BGB- 150 # GS816118BD- 150 # GS816118BGD- 150 # GS8160F18BT


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PDF IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML IS61DDB22M36-250M IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61LF51232-8 IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E IS61QDB22M36 167ML IS61NLP25636A-200TQL IS61LV5128L-12T GS8662Q36E-167
2002 - Not Available

Abstract: No abstract text available
Text: 9Mb Pipelined and Flow Through Synchronous NBT SRAM 333 MHz­ 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 , 230 5.5 5.5 160 185 -200 3.0 5.0 170 195 6.5 6.5 140 160 - 150 3.8 6.7 140 160 7.5 7.5 128 145 , °C 170 25 140 20 155 15 130 10 40 40 75 50 - 150 0 to 70°C 140 20 130 15 130 10 120 8 40 40 60 50 , 150 10 50 50 80 55 ­40 to 85°C 160 20 150 15 150 10 140 8 50 50 65 55 Unit Operating Current , 0.5 1.5 1.7 1.5 - 0 - 5 1 20 - 150 Max - 3.8 - - - - - 7.5 - - - - - - 3.0 3.8 - 3.8


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PDF GS881Z18B /GS881Z32B /GS881Z36B 100-Pin 165-Bump
2002 - D2939

Abstract: No abstract text available
Text: NBT SRAM 333 MHz­ 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Functional Description ec om , notice. For latest documentation see http://www.gsitechnology.com. es ig - 150 Unit ns ns mA mA ns ns , - 150 0 to 70°C 140 20 130 15 130 10 120 8 40 40 60 50 ­40 to 85°C 270 40 225 25 250 20 205 15 50 , 15 ­40 to 85°C 190 25 160 20 175 15 ­40 to 85°C 160 20 150 15 150 10 140 8 50 50 65 55 , . n 150 10 50 50 80 55 © 2002, GSI Technology GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D


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PDF GS881Z18B /GS881Z32B /GS881Z36B 100-Pin 165-Bump 100-lead D2939
2002 - Not Available

Abstract: No abstract text available
Text: NBT SRAM 333 MHz­ 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous , - 150 3.8 6.7 140 160 7.5 7.5 128 145 Unit ns ns mA mA ns ns mA mA Flow Through 2-1-1-1 Rev , 40 40 85 60 -200 0 to 70°C 170 25 140 20 155 15 130 10 40 40 75 50 - 150 0 to 70°C 140 20 130 , to 85°C 190 25 160 20 175 15 150 10 50 50 80 55 ­40 to 85°C 160 20 150 15 150 10 140 8 50 50 65 , 1.5 1.5 1.5 0.5 7.5 - 2.0 2.0 1.5 0.5 1.5 1.7 1.5 - 0 - 5 1 20 - 150 Max - 3.8 - - - - -


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PDF GS881Z18B /GS881Z32B /GS881Z36B 100-Pin 165-Bump 100-lead
2002 - Not Available

Abstract: No abstract text available
Text: NBT SRAM 333 MHz­ 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous , - 150 3.8 6.7 140 160 7.5 7.5 128 145 Unit ns ns mA mA ns ns mA mA Flow Through 2-1-1-1 Rev , 40 40 85 60 -200 0 to 70°C 170 25 140 20 155 15 130 10 40 40 75 50 - 150 0 to 70°C 140 20 130 , to 85°C 190 25 160 20 175 15 150 10 50 50 80 55 ­40 to 85°C 160 20 150 15 150 10 140 8 50 50 65 , Min 6.7 - 1.5 1.5 1.5 0.5 7.5 - 2.0 2.0 1.5 0.5 1.5 1.7 1.5 - 0 - 5 1 20 - 150 Max - 3.8 - -


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PDF GS881Z18B /GS881Z32B /GS881Z36B 100-Pin 165-Bump 100-lead
2002 - GS881Z18B

Abstract: No abstract text available
Text: Industrial Temp 333 MHz­ 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 9Mb Pipelined and Flow Through , 3-1-1-1 Flow Through 2-1-1-1 Rev: 1.06 3/2007 -300 -250 -200 - 150 Unit tKQ , -200 - 150 ZZ VDD ­ 0.2 V Deselect Current Device Deselected; All other inputs VIH or , 25 185 25 205 25 160 25 180 25 140 20 160 20 130 15 150 15 mA , 130 10 150 10 mA Flow Through IDD IDDQ 185 15 205 15 170 15 190 15


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PDF GS881Z18B /GS881Z32B /GS881Z36B 100-Pin 165-Bump
2002 - GS881Z18BGD-200I

Abstract: GS881Z18B
Text: Industrial Temp 333 MHz­ 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 9Mb Pipelined and Flow Through , 3-1-1-1 Flow Through 2-1-1-1 Rev: 1.06a 2/2008 -300 -250 -200 - 150 Unit tKQ , -300 -250 -200 - 150 ZZ VDD ­ 0.2 V Deselect Current Device Deselected; All other , 205 25 225 25 185 25 205 25 160 25 180 25 140 20 160 20 130 15 150 , 175 15 130 10 150 10 mA Flow Through IDD IDDQ 185 15 205 15 170 15


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PDF GS881Z18B /GS881Z32B /GS881Z36B 100-Pin 165-Bump GS881Z18BGD-200I
CY7C1338-100AXC

Abstract: gvt7164d32q-6 CY7C1363C-133AC CY7C1049BV33-12VXC CY7C1041V33-12ZXC CY7C1338G-100AC CY7C1460AV25-200AXC CY7C1021DV33-12ZXC CY7C1021DV33-10ZXC CY7C1460V33-200AXC
Text: -117AC GS840F18AT-7.5 CY7C1327G-133AC GS84018AT- 150 CY7C1325A-117BGC GS840FH18AB-7.5 CY7C1327G-133AXC GS84018AGT- 150 CY7C1325B-100AC GS840F18AT-8 CY7C1327G-133BGC GS84018AB- 150 CY7C1325B-100BGC GS840FH18AB-8 CY7C1327G-133BGXC GS84018AGB- 150 CY7C1325B-117AC GS840F18AT-7.5 CY7C1327G , -166BGXC GS84018AGB-166 CY7C1325F-100BGC GS840FH18AB-8 CY7C1328A-117AC GS840E18AT- 150 CY7C1325F-100BGXC GS840FH18AGB-8 CY7C1328A-133AC GS840E18AT- 150 CY7C1325F-117AC GS840F18AT-7.5 CY7C1328A


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PDF CY7C1019BV33-15VC GS71108AJ-12 CY7C1019BV33-15VXC GS71108AGJ-12 CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12 CY7C1019CV33-10VC GS71108AJ-10 CY7C1338-100AXC gvt7164d32q-6 CY7C1363C-133AC CY7C1049BV33-12VXC CY7C1041V33-12ZXC CY7C1338G-100AC CY7C1460AV25-200AXC CY7C1021DV33-12ZXC CY7C1021DV33-10ZXC CY7C1460V33-200AXC
2006 - GS881Z18BT-150V

Abstract: GS881Z18BT-200V GS881Z18BT-250V GS881Z32BT-150V GS881Z32BT-200V GS881Z32BT-250V
Text: deselect cycles when the device is switched from read to write cycles. 250 MHz­ 150 MHz 1.8 V or 2.5 V , -200 - 150 Unit tKQ tCycle 3.0 4.0 3.0 5.0 3.8 6.7 ns ns Curr (x18) Curr , 0 to 70°C ­40 to 85°C - 150 0 ­40 0 ­40 to 70°C to 85°C to 70°C to 85°C Unit , Through IDD IDDQ 160 25 180 25 140 20 160 20 130 15 150 15 mA Pipeline IDD IDDQ 185 15 205 15 155 15 175 15 130 10 150 10 mA Flow Through


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PDF GS881Z18/32/36B 100-Pin 165-Bump GS881Z18BT-150V GS881Z18BT-200V GS881Z18BT-250V GS881Z32BT-150V GS881Z32BT-200V GS881Z32BT-250V
2006 - GS881Z18BT-150V

Abstract: GS881Z18BT-200V GS881Z18BT-250V GS881Z32BT-150V GS881Z32BT-200V GS881Z32BT-250V
Text: deselect cycles when the device is switched from read to write cycles. 250 MHz­ 150 MHz 1.8 V or 2.5 V , -200 - 150 Unit tKQ tCycle 3.0 4.0 3.0 5.0 3.8 6.7 ns ns Curr (x18) Curr , 0 to 70°C ­40 to 85°C - 150 0 ­40 0 ­40 to 70°C to 85°C to 70°C to 85°C Unit , Through IDD IDDQ 160 25 180 25 140 20 160 20 130 15 150 15 mA Pipeline IDD IDDQ 185 15 205 15 155 15 175 15 130 10 150 10 mA Flow Through


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PDF GS881Z18/32/36B 100-Pin 165-Bump GS881Z18BT-150V GS881Z18BT-200V GS881Z18BT-250V GS881Z32BT-150V GS881Z32BT-200V GS881Z32BT-250V
2006 - Not Available

Abstract: No abstract text available
Text: available 9Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz­ 150 MHz 1.8 V or 2.5 V VDD 1.8 V , 5.0 170 195 6.5 6.5 140 160 - 150 3.8 6.7 140 160 7.5 7.5 128 145 Unit ns ns mA mA ns ns mA mA , 50 90 65 - 150 Unit 0 ­40 0 ­40 to 70°C to 85°C to 70°C to 85°C 170 25 140 20 155 15 130 10 40 40 75 50 190 25 160 20 175 15 150 10 50 50 80 55 140 20 130 15 130 10 120 8 40 40 60 50 160 20 150 15 150 10 140 8 50 50 65 55 Pipeline (x32/x36) Operating Current Device Selected; All other inputs VIH


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PDF GS881Z18/32/36B 100-Pin 165-Bump 100-lead
2006 - GS881Z18BT-150V

Abstract: GS881Z18BT-200V GS881Z18BT-250V GS881Z32BT-200V GS881Z32BT-250V
Text: read to write cycles. 250 MHz­ 150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a , 3-1-1-1 Flow Through 2-1-1-1 Rev: 1.00 6/2006 -200 - 150 Unit tKQ tCycle 3.0 4.0 , 0 to 70°C ­40 to 85°C - 150 0 ­40 0 ­40 to 70°C to 85°C to 70°C to 85°C Unit , Through IDD IDDQ 160 25 180 25 140 20 160 20 130 15 150 15 mA Pipeline IDD IDDQ 185 15 205 15 155 15 175 15 130 10 150 10 mA Flow Through


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PDF GS881Z18/32/36B 100-Pin 165-Bump GS881Z18BT-150V GS881Z18BT-200V GS881Z18BT-250V GS881Z32BT-200V GS881Z32BT-250V
2006 - Not Available

Abstract: No abstract text available
Text: available 9Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz­ 150 MHz 1.8 V or 2.5 V VDD 1.8 V , 5.5 160 185 fo rN -200 3.0 5.0 170 195 6.5 6.5 140 160 ew D - 150 3.8 6.7 140 160 7.5 , ­40 to 85°C 220 30 180 25 205 15 165 15 50 50 - 150 Unit 0 ­40 0 ­40 to 70°C to 85°C to 70°C to 85°C 170 25 140 20 155 15 130 10 40 190 25 160 20 175 15 150 10 50 50 80 55 140 20 130 15 130 10 120 8 40 40 60 50 160 20 150 15 150 10 140 8 50 50 65 55 Pipeline (x32/x36) Operating Current Device


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PDF GS881Z18/32/36B 100-Pin 165-Bump 100-lead
MT58L512L18PS-7.5

Abstract: MT58L256L18D1T-10 MT58L256L32PF-10 MT55V512V36PT-7.5 MT55L256L36FT-10 MT58L256L36FS-10 MT55L512Y36PF-7.5 GS8162Z36BB-200 MT58L64L32PT-7.5 GS816032BT-150
Text: -166 * GS840Z36AB- 150 * GS840Z36AT-100 * GS840Z36AT-166 * GS840Z36AT- 150 * GS840Z36AB-190 GS840Z36AB-166 GS840Z36AB-166 GS840Z36AT-190 GS840Z36AT-166 GS840Z36AT-166 GS840Z36AB-100 GS840Z36AB-166 GS840Z36AB- 150 GS840Z36AT-100 GS840Z36AT-166 GS840Z36AT- 150 GS840Z36AB-190 * GS840Z36AB-166 * GS840Z36AB , -166 * GS840Z36AB- 150 * GS840Z36AT-100 * GS840Z36AT-166 * GS840Z36AT- 150 * GS840Z36AB-190 GS840Z36AB-166 GS840Z36AB-166 GS840Z36AT-190 GS840Z36AT-166 GS840Z36AT-166 GS840Z36AB-100 GS840Z36AB-166 GS840Z36AB- 150


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PDF MT55L128V32P1B-6 MT55L128V32P1B-7 MT55L128V32P1T-10 MT55L128V32P1T-6 MT55L128V32P1T-7 MT55L128V36F1B-10 MT55L128V36F1B-11 MT55L128V36F1B-12 MT55L128V36F1T-10 MT55L128V36F1T-11 MT58L512L18PS-7.5 MT58L256L18D1T-10 MT58L256L32PF-10 MT55V512V36PT-7.5 MT55L256L36FT-10 MT58L256L36FS-10 MT55L512Y36PF-7.5 GS8162Z36BB-200 MT58L64L32PT-7.5 GS816032BT-150
2011 - Not Available

Abstract: No abstract text available
Text: , 1600VDC/700VAC ±3%(H), ±5%(J) 0.001max at 1kHz UR× 150 % 60s 30,000Mmin JIS C 5101-17, JIS C 5101-1 , 10.0 10.5 11.0 11.5 12.0 12.0 12.5 13.5 14.0 15.0 15.5 16.5 8.0 8.0 8.0 9.0 9.0 9.0 10.5 10.5 9.5 , 13.0 13.5 12.5 13.0 13.0 13.5 14.0 14.0 14.5 15.0 16.5 16.5 17.0 17.5 18.0 18.5 20.0 20.5 21.0 22.0 22.5 23.5 24.0 25.5 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0


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PDF 800VDC/250VAC, 1250VDC/400VAC, 1600VDC/700VAC 001max 000Mmin 161MPE102* 161MPE112* 161MPE122* 161MPE132* 161MPE152*
1N223B

Abstract: TM108 1N2268 TR301 1N245S TM69 1N2227 1N244B TM37 1N2225
Text: 1NJ277 Do-4 500 1N2278 Do-4 600 1N2279 Do-4 800 1N2446 Do-S 50 1N2447 Do-5 100 1N244B Do-5 • 150 , -5 100 1N2795 Do-5 150 m và i ©. O 0.3 @ 150 0.3 @ 150 0.3 @ 150 0.3 @ 150 0.3 @ 150 0.3 @ 150 0.3 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 1 @ 150 0.3 @ 150 0.3 @ 150 0.3 @ 150 0.3 @ 150 0.3 @ 150 0.3 @ 150 6 @ 150 6 @ 15.0 6 @ 150 6 @ 150 . 6 @ 150 6 @ 150 6@ 150 6 @ 150 20 @ 150 20 @ ISO 20 @ 150 20 @ 150 20 @ 150 20 @ 150 20 @ 150 20 @


OCR Scan
PDF Q0003S7 1N2224A 1N2225 Do-10 1N2225A 1N2226 1N222SA 1N2227A 1N223B TM108 1N2268 TR301 1N245S TM69 1N2227 1N244B TM37
2006 - MPE capacitors

Abstract: 800MPE102 800MPE112 MPE 0.0068 capacitors
Text: Voltage proof UR × 150 % 60s Insulation resistance 30,000Mmin Reference standard JIS C , =7.5 Symbol TJ TN Lead style Style C, Ammo pack P=25.4 Po=12.7 LS=5.0 Style E, Ammo pack P=30.0 Po= 15.0 , 9.5 10.0 10.5 11.0 11.5 12.0 12.0 12.5 13.5 14.0 15.0 15.5 16.5 8.0 8.0 8.0 9.0 9.0 , 13.5 14.0 14.5 12.0 12.5 12.5 13.0 13.0 13.5 12.5 13.0 13.0 13.5 14.0 14.0 14.5 15.0 , (H: - 3%, J: - 5%) + + F - 0.5 LS - 0.5 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0


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PDF 800VDC/250VAC, 1250VDC/400VAC, 1600VDC/700VAC 001max 000Mmin 161MPE MPE capacitors 800MPE102 800MPE112 MPE 0.0068 capacitors
2002 - Not Available

Abstract: No abstract text available
Text: ), ±10%(K) 250V.a.c. 103 to 106 W x 150 % 60sec or W x 175% 1 to 5sec V V C <= 0.33µF 30 , = 22.5 F = 27.5 F = 15.0 F = 20.0 F = 25.0 F = 15.0 F = 20.0 F = 25.0 F = 15.0 F = 20.0 F = 25.0 F = 15.0 F = 20.0 F = 25.0 F +/-0.8 103 to 913 103 to 434 103 to 913 103 to , 12.0 12.5 12.5 13.0 12.0 12.5 13.0 13.5 14.0 14.0 14.5 14.5 15.0 15.5 15.5 16.0 16.5 , 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 15.0 15.0 15.0 15.0 15.0


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PDF
2005 - 414v

Abstract: mpe 630v
Text: . 150 % 60sec or W.V. 175% 1 to 5sec 250V.d.c. 103~106 C0.33µF 30,000M or more Insulation , = 7.5 F=10.0 F=12.5 F=17.5 F=22.5 F=27.5 F= 7.5 F= 15.0 F=20.0 F=25.0 F= 7.5 F= 15.0 F=20.0 F=25.0 F= 7.5 F= 15.0 F=20.0 F=25.0 F= 7.5 F= 15.0 F=20.0 F=25.0 103 to 913 103 to 434 103 to 913 103 to 304 , 12.5 13.0 12.0 12.5 13.0 13.5 14.0 14.0 14.5 14.5 15.0 15.5 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.5 , 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 15.0 15.0 15.0 15.0 15.0 15.0 15.0 17.5


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PDF 250Vo-p, 131Vp-p 600Vo-p, 414Vp-p 414v mpe 630v
2005 - TYPE MPE NISSEI

Abstract: No abstract text available
Text: (at 1kHz) Voltage proof W.V. 150 % 60sec or W.V. 175% 1 to 5sec 250V.d.c. 103~106 C0.33F 30 , =17.5 F=22.5 F=27.5 F= 7.5 F=10.0 F=12.5 F=17.5 F=22.5 F=27.5 F= 7.5 F= 15.0 F=20.0 F=25.0 F= 7.5 F= 15.0 F=20.0 F=25.0 F= 7.5 F= 15.0 F=20.0 F=25.0 F= 7.5 F= 15.0 F=20.0 F=25.0 103 to 913 103 to 434 103 to , 12.5 13.0 12.0 12.5 13.0 13.5 14.0 14.0 14.5 14.5 15.0 15.5 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.5 , 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 15.0 15.0 15.0 15.0 15.0 15.0 15.0 17.5


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PDF 250Vo-p, 131Vp-p 600Vo-p, 414Vp-p TYPE MPE NISSEI
1999 - 1V100RK

Abstract: 1T330 1C39RK N2400 N5600 1Z56 N220 N330 1V75RK 1V33RK
Text: .090" Coating: Epoxy 28 +25 +50 +75 +100 0 ± 30 -80 - 150 -220 -330 -470 -750 , 120 150 180 220 270 330 NPO Part Max. No. Size 1C.5RC . 150 Sq 1C1RC . 150 Sq 1C1.5RC . 150 Sq 1C2RK . 150 Sq 1C2.5RK . 150 Sq 1C5RK . 150 Sq 1C7RK . 150 Sq 1C10RK . 150 Sq 1C12RK . 150 Sq 1C15RK .165 Sq 1C18RK .180 Sq 1C22RK .190 Sq 1C25RK .200 Sq 1C27RK .205 Sq 1C33RK , N080 Part Max. No. Size 1L.5RC . 150 Sq 1L1RC . 150 Sq 1L1.5RC . 150 Sq 1L2RK . 150 Sq 1L2.5RK


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PDF N5600 -41Z18RK 1Z22RK 1Z27RK 1Z33RK 1Z39RK 1Z47RK 1Z56RK 1Z68RK 1Z82RK 1V100RK 1T330 1C39RK N2400 1Z56 N220 N330 1V75RK 1V33RK
schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Axial 10EDA10 100 1 Ta=39 PCB Mounted 45 1 10 150 1 10EDA20 200 1 Ta=39 PCB Mounted 45 1 10 150 1 10EDA40 400 1 Ta=39 PCB Mounted 45 1 10 150 1 10EDA60 600 1 Ta=39 PCB Mounted 45 1 10 150 1 10EDB10 100 1 Ta=39 PCB Mounted 45 1 10 150 1 10EDB20 200 1 Ta=39 PCB Mounted 45 1 10 150 1 10EDB40 400 1 Ta=39 PCB Mounted 45 1 10 150 1


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PDF OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 schottky barrier diode b22 FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K7A403600M-QC16 K6R4016V1D-TC08 K7I161882B-EC30 K6R4008V1C-JC12 K7R643682M-FC20 K6R4016V1D-UC10 K6R1008V1C-JC10
Text: -12 GS74117AGX-8 GS74117AGX-10 GS74117AGX-12 GS74117AGX-12 GS74117AGX-12 GS816118BD- 150 GS816118BD- 150 GS816118BD-200 GS816118BD-200 GS816118BD-250 GS816118BD-250 GS816218BB- 150 GS816218BB- 150 GS816218BB-200 GS816218BB-200 GS816218BB-250 GS816218BB-250 GS816018BGT- 150 GS816018BGT- 150 GS816018BGT-200 GS816018BGT-200 GS816018BGT-250 GS816018BGT-250 GS816018BT- 150 GS816018BT- 150 GS816018BT-200 GS816018BT , K7A163201A-HC15 K7A163201A-HC16 K7A163201A-HC20 K7A163201A-HC22 K7A163201A-HC25 GS816018BT-250 GS816218BB- 150


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PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K7A403600M-QC16 K6R4016V1D-TC08 K7I161882B-EC30 K6R4008V1C-JC12 K7R643682M-FC20 K6R4016V1D-UC10 K6R1008V1C-JC10
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Abstract: No abstract text available
Text: Tolerance 0.001max at 1kHz tanδ Voltage Proof UR× 150 % 60s Insulation Resistance 30,000MΠ, 9.0 9.5 9.5 10.5 11.5 12.0 13.5 15.0 16.5 6.0 6.0 6.0 6.0 5.5 5.5 5.5 6.0 6.5 7.0 , 10.5 9.5 11.0 11.5 11.5 12.0 12.5 13.0 13.5 12.0 12.5 13.0 13.5 13.0 13.5 14.0 15.0 , 12.5 13.0 14.5 14.5 15.5 17.0 17.0 17.5 18.5 20.0 22.5 24.0 25.5 27.0 28.5 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0


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PDF 800VDC/250VAC, 1250VDC/400VAC, 1600VDC/700VAC 001max PE104â 800MPE124â 800MPE154â 121MPE102â 121MPE122â 121MPE152â
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