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Part Manufacturer Description Datasheet Download Buy Part
LTC6603IUF#PBF Linear Technology LTC6603 - Dual Adjustable Lowpass Filter; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC6602CUF#TRPBF Linear Technology LTC6602 - Dual Matched, High Frequency Bandpass/Lowpass Filters; Package: QFN; Pins: 24; Temperature Range: 0°C to 70°C
LTC6602CUF#PBF Linear Technology LTC6602 - Dual Matched, High Frequency Bandpass/Lowpass Filters; Package: QFN; Pins: 24; Temperature Range: 0°C to 70°C
LTC6603IUF#TRPBF Linear Technology LTC6603 - Dual Adjustable Lowpass Filter; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC6603CUF#TRPBF Linear Technology LTC6603 - Dual Adjustable Lowpass Filter; Package: QFN; Pins: 24; Temperature Range: 0°C to 70°C
LTC6603CUF#PBF Linear Technology LTC6603 - Dual Adjustable Lowpass Filter; Package: QFN; Pins: 24; Temperature Range: 0°C to 70°C

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GP aaa Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - GP AAA

Abstract:
Text: LDMOS transistor 7.2 CW aaa -000328 30 Gp (dB) 20 Gp 60 D (%) 40 (1) (2) (3) 10 (1 , = 7.2 dB at 0.01 % probability on CCDF. 22 Gp (dB) 18 Gp aaa -000331 72 D (%) 48 -10 , CCDF; carrier spacing 5 MHz. 35 Gp (dB) 30 25 Gp 20 15 10 D 5 (1) (2) (3) (1) (2) (3) aaa , ] IDq (mA) 410 410 410 410 VDS (V) 28 28 28 28 PL(AV) (W) 13.5 5 15 5 Gp (dB) 19 20.3 19 20.5 , class-AB production test circuit. Symbol Gp RLin D ACPR5M Parameter power gain input return loss drain


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PDF BLF6G22L-40P; BLF6G22LS-40P BLF6G22L-40P 6G22LS-40P GP AAA
2013 - Not Available

Abstract:
Text: -250P Power LDMOS transistor 7.3 1 Tone CW 19.0 Gp (dB) aaa -001318 (3) (2) (1) 60 D (%) 50 (3) (2) (1 , -250P Power LDMOS transistor 7.4 1-carrier W-CDMA 19 Gp (dB) 18 aaa -001320 50 D (%) 40 PAR (dB) 8 aaa -001321 Gp 7 (3) (2) 17 30 6 (1) 16 D 20 5 15 10 14 0 40 80 0 120 , transistor 7.5 2-carrier W-CDMA 19.0 Gp (dB) 18.6 Gp aaa -001323 50 D (%) 40 19.0 Gp (dB) 18.6 (3 , ] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18.5 D (%) 31


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PDF BLF7G22L-250P; BLF7G22LS-250P BLF7G22L-250P 22LS-250P
2011 - j597

Abstract:
Text: 7.4 1-carrier W-CDMA 19 Gp (dB) 18 aaa -001320 50 D (%) 40 PAR (dB) 8 aaa -001321 Gp 7 , 7.5 2-carrier W-CDMA 19.0 Gp (dB) 18.6 Gp aaa -001323 50 D (%) 40 19.0 Gp (dB) 18.6 (3) (2) (1 , ] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18.5 D (%) 31 , PL(AV) Gp RLin D ACPR Parameter average output power power gain input return loss drain efficiency , NXP Semiconductors BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor 7.3 1 Tone CW 19.0 Gp


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PDF BLF7G22L-250P; BLF7G22LS-250P BLF7G22L-250P 22LS-250P j597 TRANSISTOR j589
1999 - Not Available

Abstract:
Text: U7024B 5 6 7 8 12 11 10 9 Figure 2. Pinning ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Pin 1 2 3 4 5 6 7 8 9 Symbol R_SWITCH SWITCH_OUT GND1 LNA_IN V2_PA V3_PA_OUT


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PDF U7024B U7024B PSSOP16 D-74025 28-May-99
GP Batteries

Abstract:
Text: PRODUCT SPECIFICATION + GP ReCyko Value Charger Model: AR01 Revision History Revision , 51.4 6.0 Unit : mm NOTE : It is safe to charge GP NiMH batteries continuously with GP ReCyko+ Charger. Product Name : GP ReCyko+ Value Charger Description : Continuous NiMH Battery , (DO NOT mix AA and AAA size batteries in the same channel.) Output Voltage : 2.8V DC Charging Current : AA 180mA ± 10% AAA 80mA ± 10% Charging Time : MTBF : 30000


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PDF GPAR01 180mA 2050mAh 820mAh 12060I06448 GP Batteries GPAR01 recyko MTBF BATTERY CHARGER GP Ni-mh GP aaa charger circuit 10w GP Batteries C size GP recyko charger ni-mh
Not Available

Abstract:
Text: Performance • Broadband Power Gain @ f = 50 MHz Gp = 20 dB Typ (MHW6205) Gp = 22 dB Typ (MHW6225) â , MHW6205 MHW6205 Gp 19.5 20.3 20.5 22.5 dB Power Gain f = 50 MHz f = 550 MHz MHW6225 MHW6225 Gp 21.4 22 22.6 24 dB S 0.3 2 dB MHW6205 MHW6225 Gf — â , , Inc. 1994 MHW6205 MHW6225 1 PACKAGE DIMENSIONS Q –A⠀“ 0.25 (0.010) S –Zâ , INCHES MIN MAX ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 0.022 0.465 0.510 0.300


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PDF MHW6205/D MHW6205 MHW6225 MHW6205) MHW6225) MHW6205 MHW6205/D*
Not Available

Abstract:
Text: €“Channel Performance • Broadband Power Gain — @ f = 40– 550 MHz Gp = 18.5 dB Typ @ 50 MHz Gp = 19.2 dB Typ @ 450 MHz Gp = 19.5 dB Typ @ 550 MHz Gp = 19.8 dB Typ @ 600 MHz • Broadband Noise Figure NF = 4.5 , Power Gain 50 MHz 450 MHz 550 MHz 600 MHz All MHW5185B MHW6185B MHW6185–6 Gp 18 , DEVICE DATA PACKAGE DIMENSIONS Q –A⠀“ 0.25 (0.010) S –Z– NOTES: 1 , ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC


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PDF MHW5185B/D MHW5185B MHW6185B MHW6185-6 MHW5185B, MHW6185B, MHW6185â MHW5185B MHW6185B
Powerbank

Abstract:
Text: is safe to charge GP NiMH batteries continuously with GP PowerBank AA AA/ AAA AA AA/ AAA 123.0 18.0 2 Unit : mm . Product Name : GP PowerBank 3 Description : Continuous , channel (DO NOT mix AA and AAA size batteries in the same channel.) Output Voltage : 2.8V DC Charging Current : AA 130mA +/- 25% AAA 52mA +/- 25% Trickle Charge Current : AA 80mA +/- 25% AAA 33mA +/- 25% Charging Time : 18 +/- 0.5 hours MTBF : 30000 hours (at ambient


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PDF GPPB04 130mA 03040I04070 Powerbank GP Powerbank GP Ni-mh GP aaa GP Batteries GPPb GP Batteries GP Powerbank Datasheet GPPB04 Ni-MH AA battery GP Batteries C size
Not Available

Abstract:
Text: LOW NOISE CATV AMPLIFIERS • Broadband Power Gain — @ f = 40 – 550 MHz GP = 18.5 dB Typ @ 50 MHz GP = 19.1 dB Typ @ 450 MHz GP = 19.5 dB Typ @ 550 MHz • Broadband Noise Figure NF = 4.5 dB , 50 MHz 450 MHz 550 MHz Power Gain Typ MHW5183 MHW6183 Frequency Range Min GP , MHW5183 MHW6183 1 PACKAGE DIMENSIONS Q –A⠀“ 0.25 (0.010) S –Z– NOTES: 1 , ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC


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PDF MHW5183/D MHW5183 MHW6183 60-Channel 77-Channel MHW5183 MHW5183/D*
Not Available

Abstract:
Text: MHz Gp = 21 dB (Min) @ 50 MHz Gp = 21.7 dB (Min) @ 600 MHz • Broadband Noise Figure @ 600 MHz NF , 40 — 600 MHz Power Gain f = 50 MHz Gp 21 21.5 22 dB Power Gain f = 600 MHz Gp 21.7 — 23 dB Slope f = 40 – 600 MHz S 0 — 1.8 , , Inc. 1994 f = 50 MHz f = 600 MHz MHW6222–6 1 PACKAGE DIMENSIONS Q –A⠀“ 0.25 , S U V W INCHES MIN MAX ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 0.022


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PDF MHW6222â MHW6222-6 MHW6222-6/D*
msr127tp

Abstract:
Text: QphxxpyiftyÁfpÁiptrypiÁÁrtpÁÁxpÁftfyhpÁ tyÁÁiphttyxfvtyrÁhpÁtsÁpphÁÁfÁhpftyÁ qyhtyÁÁfÁphsythfwÁxpfp Gp , 4iittyfwÁpqppyhpÁtyqxftyÁtÁfftwfgwpÁyÁspÁQhvpwwÁ 4xftyÁpgtpÁfÁhvpwwfxftyhxÁÁ fghxfqp ! ÁÁÁ HtrtyfwÁtyhty R $UHD $FFHVV &RQWURO 6DIHW , hxxttytyrÁspÁ446ÁipthpÁ 6SHFLDO IHDWXUHV t QpwfÁ t QrrpiÁpÁqÁhyhty t EyrÁpftyrÁfyrpÁÁÁ$Áx t ApfpiÁqyÁtyi # ÁÁÁ , Gp ' 4ÁpfÁtypwhvÁppyÁspÁxfhstypÁftyrÁfrftyÁ fqpÁfyÁpÁÁfyÁtyptyÁqÁspÁwtrsÁfs ATTENTION 7twf , fsÁtyppiÁÁtyfipfpÁ Gp ' 4yÁ87FÁhsphvÁtqÁspÁiypfxÁhyfhÁfhfwwÁ fwtryxpyÁÁipthpÁyÁpÁpfiÁfqpÁ


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PDF SEN-0401-A-EN msr127tp msr127 100S-C43DJ404BC msr127t 440L-T4F2070-Q 440R-N23132 440L-R4F0020-Q Allen-Bradley MSR127 440L-R4F guardmaster 440l
Not Available

Abstract:
Text: €“ 450 MHz Gp = 20 dB (Typ) @ 50 MHz Gp = 22 dB (Typ) @ 450 MHz • Broadband Noise Figure NF = 6.5 , €” 450 MHz Gp 20 21 20.5 21.7 21 23 dB S 50 MHz 450 MHz Symbol BW , –A⠀“ 0.25 (0.010) S –Z– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 , P Q R S U V W INCHES MIN MAX ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 , 0.148 0.168 ––⠀“ 0.595 1.500 BSC 0.200 BSC 0.280 BSC 0.435 0.450 STYLE 1: PIN 1. 2. 3


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PDF MHW5205/D MHW5205 MHW5205/D*
GP Ni-mh

Abstract:
Text: PRODUCT SPECIFICATION + GP ReCyko Value Charger Model: AR02 Revision History Revision , 5.0 NOTE : It is safe to charge GP NiMH batteries continuously with GP ReCyko+ Charger. Unit : mm 37.0 Product Name : GP ReCyko+ Value Charger Description : Continuous NiMH , channel. Output Voltage : 1.4V DC Charging Current : AA 180mA ± 10% AAA 80mA ± 10 , : GS, CE, UL, CQC Warranty Period : 12 months from ex-factory date Battery AA AAA


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PDF GPAR02 charg230V 180mA 2050mAh 820mAh 12060I06448 GP Ni-mh recyko MTBF BATTERY CHARGER GP Batteries AR02 GP recyko charger GP AAA GPAR02 MEI Semiconductors
Not Available

Abstract:
Text: – 450 MHz Gp = 22 dB (Typ) @ 50 MHz Gp = 23 dB (Typ) @ 450 MHz • Broadband Noise Figure NF = , ) Symbol Min Typ Max Unit BW 40 — 450 MHz Gp 21.4 22.3 22.0 23.0 , PACKAGE DIMENSIONS Q –A⠀“ 0.25 (0.010) S –Z– NOTES: 1. DIMENSIONING AND , DIM A B C D E F G J K L N P Q R S U V W INCHES MIN MAX ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315


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PDF MHW5255/D MHW5225 60-CHANNEL 714-0ges MHW5225/D* MHW5225/D
Not Available

Abstract:
Text: EXTENDER AMPLIFIER • Broadband Power Gain  @ f = 40 – 450 MHz Gp = 27 dB (Typ) • Broadband , Typ Max Unit Frequency Range BW 40 — 450 MHz Power Gain — 50 MHz Gp 26.2 27 27.8 dB Power Gain — 450 MHz Gp 27.0 28.0 29.0 dB Slope S , MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q –A⠀“ 0.25 (0.010) S –Z– NOTES: 1 , ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC


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PDF MHW5272A/D MHW5272A MHW5272A/D*
Not Available

Abstract:
Text: €¢ Broadband Power Gain — @ f = 40– 600 MHz Gp = 18.5 dB (Typ) @ 50 MHz Gp = 19.5 dB (Typ) @ 600 MHz â , €“600 MHz Composite Second Order (Vout = + 44 dBmV/ch., Worst Case) MHz Gp 18 18.5 18.5 , –A⠀“ 0.25 (0.010) S –Z– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 , P Q R S U V W INCHES MIN MAX ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 , 0.148 0.168 ––⠀“ 0.595 1.500 BSC 0.200 BSC 0.280 BSC 0.435 0.450 STYLE 1: PIN 1. 2. 3


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PDF MHW6185â MHW6185-6A MHW6185-6A/D*
2000 - Not Available

Abstract:
Text: Figure 2. Pinning PSSO20 ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ , R_SWITCH PU RX_ON LNA_OUT ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ


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PDF T7024 T7024 D-74025 18-Aug-00
Not Available

Abstract:
Text: (lbf•in) Thermal Resistance Typ. Max. Units RθJC Junction-to-Case Parameter ––⠀“ 0.75 °C/W RθJC Junction-to-Case, Fullpak ––⠀“ 3.14 0.50 ––⠀“ ––⠀“ 62 ––⠀“ 40 ––⠀“ 65 Rθcs Case-to-Sink, Flat, Greased Surface , . Units V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ RDS(on) ––⠀“ V Conditions VGS = 0V, ID = 250µA 150 ––⠀“ Breakdown Voltage Temp. Coefficient ––â


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PDF 4927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF AN1001) O-220AB O-220 O-262 IRFB41N15D
2012 - transistor aaa

Abstract:
Text: -002251 18 aaa -002252 50 D (%) Gp (dB) 40 (2) 12 (1) (3) (3) 30 (2) (1 , radar power transistor aaa -002253 400 PL (W) 50 Gp , RLin (dB) (1) (2) D (%) 48 24 (3) 300 aaa -002254 30 D 46 16 200 Gp 12 44 RLin 100 42 6 0 , function of frequency; typical values aaa -002256 18 (1) Gp (dB) (3) 250 12 (3 , LDMOS L-band radar power transistor aaa -002257 50 D (%) aaa -002258 30 50 Gp ,RLin


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PDF BLL6G1214L-250 transistor aaa
2000 - Not Available

Abstract:
Text: LNA_OUT 17 GND 16 PA_IN T7024 15 V1_PA 14 GND 13 V2_PA 12 V2_PA 11 RAMP ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ , for power amplifier output V3_PA_OUT GND RAMP Figure 2. Pinning ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ


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PDF T7024 T7024 PSSO20 D-74025 17-Apr-00
1998 - Not Available

Abstract:
Text: precautions for handling. ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ


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PDF U7004B U7004B D-74025 10-Jun-98
Powerbank GPPB04GS

Abstract:
Text: charging 2 or 4 pcs NiMH batteries; 2 batteries per one channel (DO NOT mix AA and AAA size batteries in the same channel.) Output Voltage : 2.8V DC Charging Current : AA 130mA +/- 25% AAA 52mA +/- 25% Trickle Charge Current : AA 80mA +/- 25% AAA 33mA +/- 25% Charging Time : 18 + , 26 1 44.0 90° AA AA/ AAA AA AA/ AAA 123.0 2 13.7 .1 1 2 Unit : mm NOTE : It is safe to charge GP NiMH batteries continuously with GP PowerBank Member


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PDF GPPB04GS 130mA 03020I1406 Powerbank GPPB04GS GP Ni-mh GPPB04GS Powerbank GP Powerbank Ni-MH AA battery GPPB04 GP Powerbank Datasheet GP Batteries GPPb GP Batteries
Not Available

Abstract:
Text: INPUT/OUTPUT TRUNK AMPLIFIER • Broadband Power Gain  @ f = 40 – 450 MHz Gp = 17.4 dB (Typ , Typ Max Unit Frequency Range BW 40 — 450 MHz Power Gain — 50 MHz Gp 16.8 17.4 17.8 dB Power Gain — 450 MHz Gp 17.4 18.4 19.0 dB Slope S , MHW5172A 2 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q –A⠀“ 0.25 (0.010) S –Zâ , MIN MAX ––⠀“ 1.775 ––⠀“ 1.085 ––⠀“ 0.840 0.018 0.022 0.465 0.510 0.300


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PDF MHW5172A/D MHW5172A MHW5172A/D*
2012 - Not Available

Abstract:
Text: transistor aaa -002253 400 PL (W) aaa -002254 30 50 ηD (%) Gp , RLin (dB) (1) (2 , frequency; typical values aaa -002256 18 (1) (2) Gp (dB) (3) 250 12 (3) (2) (1 , radar power transistor aaa -002257 50 ηD (%) aaa -002258 30 50 Gp ,RLin (dB) 40 , . pulsed RF f VDS PL Gp D tr tf (GHz) Test signal (V) (W) (dB) (% , efficiency PL = 250 W [1] Gp power gain Pdroop(pulse) pulse droop power input return loss %


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PDF BLL6G1214L-250
2001 - Not Available

Abstract:
Text: GND ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ Pin 1 2 3 4 5 6 7 8 Symbol GND PA_IN GND Function , V3_PA_OUT GND ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ V2_PA GND V1_PA GND Slug Figure 2. Pinning , ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ


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