The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1127MJ14 Linear Technology IC QUAD OP-AMP, 140 uV OFFSET-MAX, 45 MHz BAND WIDTH, CDIP14, Operational Amplifier
LT1125CS8 Linear Technology IC OP-AMP, 140 uV OFFSET-MAX, 12.5 MHz BAND WIDTH, PDSO16, Operational Amplifier
LT1127CN14 Linear Technology IC QUAD OP-AMP, 140 uV OFFSET-MAX, 45 MHz BAND WIDTH, PDIP14, Operational Amplifier
LT1127CJ14 Linear Technology IC QUAD OP-AMP, 140 uV OFFSET-MAX, 45 MHz BAND WIDTH, CDIP14, Operational Amplifier
LT1125CJ14 Linear Technology IC QUAD OP-AMP, 140 uV OFFSET-MAX, 12.5 MHz BAND WIDTH, CDIP14, Operational Amplifier
LT1127CS16 Linear Technology IC QUAD OP-AMP, 140 uV OFFSET-MAX, 45 MHz BAND WIDTH, PDSO16, Operational Amplifier

GP 140 datasheet (6)

Part Manufacturer Description Type PDF
GP140 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
GP140 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
GP140 Others Cross Reference Datasheet Scan PDF
GP1400 Diotec HIGH VOLTAGE DIODE RECTIFIER Original PDF
GP1400 Diotec High Voltage Diode Rectifiers Scan PDF
GP1400 Diotec HIGH VOLTAGE DIODE RECTIFIERS Scan PDF

GP 140 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MHW5181A

Abstract: MHW5142A MHW5181 GP 140 300C MHW5182A MHW5142 MHW5142AID
Text: MHz Gp 13.5 14 14.5 dB Gp 14.0 - - dB s - 1.5 dB - , Gp = 14 dB Vyp) @ 50 MHz 14.5 dB (Min) @ 450 MHz Broadband Noise Figure @ 450 MHz NF = 7.0 dB (Max


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PDF MHW5142AID MHW5142A MHW5142A/D MHW5181A MHW5142A MHW5181 GP 140 300C MHW5182A MHW5142 MHW5142AID
2001 - GP140

Abstract: GP 140 M252 SD56120M
Text: Output Power & Power Gain VS. Input Power 20 160 20 Gp 140 18 120 16 100 14 , 6 0 IMD, Intermodulation Distorsion (dBc) Gp , POWER GAIN (dB) 22 Pout Gp , POWER GAIN


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PDF SD56120M SD56120M GP140 GP 140 M252
2006 - RA30H1317M

Abstract: RA30H1317M-101
Text: 0 5 10 15 12 Pout 50 10 Gp 40 8 30 6 IDD 20 4 f=155MHz, VDD=12.5V, VGG=5V 10 0 -10 180 60 OUTPUT POWER Pout(dBm) POWER GAIN Gp (dB) Pout Gp 140 150 160 170 FREQUENCY f(MHz) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp (dB) 60 nd -60 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 50 2 3rd 0 180 140 150


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PDF RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz 24Jan RA30H1317M-101
2004 - RA30H1317M

Abstract: RA30H1317M-01
Text: 0 5 10 15 12 Pout 50 10 Gp 40 8 30 6 IDD 20 4 f=155MHz, VDD=12.5V, VGG=5V 10 0 -10 180 60 OUTPUT POWER Pout(dBm) POWER GAIN Gp (dB) Pout Gp 140 150 160 170 FREQUENCY f(MHz) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp (dB) 60 50 2nd 3rd 0 180 140 150 160 170 FREQUENCY f(MHz) VDD=12.5V VGG=5V Pin=50mW 2 0 20


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PDF RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz RA30H1317M-01
2009 - Not Available

Abstract: No abstract text available
Text: =25±5°C, F=F1. Gp 14.0 15.5 dB Pout 15.0 21.3 W VCC=48V, Pin=0.6W, Pulse= Note 2, TF , Design TYPICAL DATA PIN (W) RL (dB) POUT (W) GP (dB) IC ind nC (%) Droop


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PDF IB1011L15 IB1011L15 IB1011L15-REV-NC-DS-REV-B
Not Available

Abstract: No abstract text available
Text: GP 14.0 14.8 - dB 50 55 - % VSWR-S 5:1 - - - VSWR-T 10:1 , 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 RF Power Transfer Curve 160 140 Pout(W , 140 160 Pout(W) 1 1.2 1.4 1.6 1.8 2 2.2 Freq(GHz) 4 ADVANCED: Data


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PDF MAGX-001220-100L00
2011 - GaN amplifier 100W

Abstract: MAGX-001220-100L00 Gan on silicon transistor
Text: Power Gain POUT 100 110 - W Peak Pout = 100W Peak, 10W Ave GP 14.0 14.8 - , Curve 160 140 Pout(W) 120 100 80 1.2GHz 60 1.6GHz 2.0GHz 40 20 0 0 1 2 , 80 100 120 140 160 Pout(W) Return Loss (dB) 0 17 Gain(dB) 18 3W 4W


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PDF MAGX-001220-100L00 MAGX-001220-100L00 GaN amplifier 100W Gan on silicon transistor
2009 - amp circuit diagrams 300w

Abstract: RF MOSFET MODULE RA30H1317M RA30H1317M-101 GP 140
Text: 10 Gp 40 8 30 6 IDD 20 4 f=155MHz, VDD=12.5V, VGG=5V 10 0 -10 180 60 OUTPUT POWER Pout(dBm) POWER GAIN Gp (dB) Pout Gp 140 150 160 170 FREQUENCY f(MHz , Pout(dBm) POWER GAIN Gp (dB) 60 nd -60 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 50 2 3rd 0 180 140 150 160 170 FREQUENCY f(MHz) -30 2 0 20 , DRAIN CURRENT versus INPUT POWER 12 Pout 50 10 Gp 40 8 30 6 IDD 20 4 f


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PDF RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz amp circuit diagrams 300w RF MOSFET MODULE RA30H1317M-101 GP 140
2010 - RA30H1317M

Abstract: RA30H1317M-101 W905
Text: 10 Gp 40 8 30 6 IDD 20 4 f=155MHz, VDD=12.5V, VGG=5V 10 0 -10 180 60 OUTPUT POWER Pout(dBm) POWER GAIN Gp (dB) Pout Gp 140 150 160 170 FREQUENCY f(MHz , Pout(dBm) POWER GAIN Gp (dB) 60 nd -60 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 50 2 3rd 0 180 140 150 160 170 FREQUENCY f(MHz) -30 2 0 20 , DRAIN CURRENT versus INPUT POWER 12 Pout 50 10 Gp 40 8 30 6 IDD 20 4 f


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PDF RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz RA30H1317M-101 W905
KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: GP 121 GP 122 GP 128 GP 130 GP 131 GP 132 GP 139 GP 140 GP 141 GP 142 GP 143 GP 145 GP 146 GP 147 GP , weitere Ersatztypen Bau form 3 A 1505 A 1617 A 1702 AC 106 AC 107 AC 117 S r i Sn Sn Gp Gp Gp , ^ Material (V) 1 2 AC 122 Gp AC 122/30 G£ AC AC AC AC AC AC AC AC AC AC 124 125 126 127 128 128K 131/30 132 150 151 G£ Gp Gp Gn Gp Gp Gp Gp * GC *118e KT 3107B BC GC GC AC G C AC BC GC GC BC 313-16 3 0 1 dte , AC 153K AC 160 AC 160ge Gp Gp Gp . G P BC 313-16 GC 301dte AC 188K GC 118d GC 118d GC 11 8e


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NT101

Abstract: bf503 KT-934 Kt606 SEMICON INDEXES Mps56 transistors 2SA749 72284 2sk81 2SB618
Text: No file text available


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diagram HANNSTAR j mv 4

Abstract: diagram HANNSTAR k mv diagram HANNSTAR k mv 4 M54-P M54P yonah ich7m m54p PCI7412 C1581 1D05V hy5ps561621afp-25
Text: 3D3V_S0 U24 R598 10KR2J-3- GP 31 22 25 32 34 30 16 PCLK_KBC PCLK_LAN PCLK_PCM PCLK_SIO PCLK_FWH , 10KR2J-3- GP 1 1 2 1 2 1 1 MINI 2 2 1 2 1 2 2 DY 2 3 16 PM_STPPCI# 11,18 SMBC_ICH 11,18 SMBD_ICH 33R2J-2- GP PCLKCLK0 33R2J-2- GP PCLKCLK1 22R2J-2- GP PCLKCLK2 33R2J-2- GP PCLKCLK3 22R2J-2- GP 33R2J-2- GP SS_SEL 33R2J-2- GP ITP_EN 1 2 R174 10KR2J-3- GP 1 2 1 2 2 1 2 1 1 2 1 2 1 2 3 4 3 4 4 , SC20P50V2JN-1GP C225 1 2 3D3V_S0 SC20P50V2JN-1GP 2 50 GEN_XTAL_OUT 49 1 2 R154 470R2J-2- GP R177 1


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PDF TPS51120 CV125PA 66G/1 83G/2G 400/533/667MHz SD-1108 4A901 05217-SD TPS51124 diagram HANNSTAR j mv 4 diagram HANNSTAR k mv diagram HANNSTAR k mv 4 M54-P M54P yonah ich7m m54p PCI7412 C1581 1D05V hy5ps561621afp-25
sl8z4

Abstract: g792 diagram HANNSTAR k mv VDD256 hannstar j mv 1 M54-p diagram HANNSTAR j mv 4 1D05V PCI7412 diode c649 ST
Text: 2 2 2 3D3V_S0 U24 R598 10KR2J-3- GP 30 51 25 32 PCLK_KBC PCLK_LAN PCLK_PCM PCLK_FWH R173 R176 R179 R209 1 RN35 SS_SEL 1 1 1 1 2 2 2 2 33R2J-2- GP 33R2J-2- GP 33R2J-2- GP 33R2J-2- GP , # 22 CLK_PCIE_SATA 15 CLK_PCIE_SATA# 15 RN21 RN40 RN25 2 1 H/L: 100/96MHz R597 10KR2J-3- GP 16 CLK_ICHPCI 16 PM_STPPCI# 11,18 SMBC_ICH 11,18 SMBD_ICH R211 1 SS_SEL ITP_EN 2 33R2J-2- GP 1 2 R174 10KR2J-3- GP GIGA SATA 3 4 3 4 SRN33J-5-GP-U SRN33J-5-GP-U DY 2 3 H/L : CPU_ITP


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PDF TPS51120 CV125PA 83G/2G/2 400/533/667MHz 4Q801 TPS51124 533/667MHz TPS51100 sl8z4 g792 diagram HANNSTAR k mv VDD256 hannstar j mv 1 M54-p diagram HANNSTAR j mv 4 1D05V PCI7412 diode c649 ST
sl8z4

Abstract: diagram HANNSTAR j mv 4 g792 M54P PDTA144E sl8yb M54-p diagram HANNSTAR k mv EC565 hy5ps561621afp-25
Text: 2 2 2 3D3V_S0 U24 R598 10KR2J-3- GP 30 51 25 32 PCLK_KBC PCLK_LAN PCLK_PCM PCLK_FWH R173 R176 R179 R209 RN35 SS_SEL 1 1 1 1 2 2 2 2 33R2J-2- GP 33R2J-2- GP 33R2J-2- GP 33R2J-2- GP , 10KR2J-3- GP 16 CLK_ICHPCI 16 PM_STPPCI# 11,18 SMBC_ICH 11,18 SMBD_ICH R211 1 SS_SEL ITP_EN 2 33R2J-2- GP 1 2 R174 10KR2J-3- GP DY 2 3 H/L : CPU_ITP/SRC7 PCLK_FWH & PCLK_PCM need equal length , SC27P50V2JN-2- GP C225 1 1 2 GEN_XTAL_OUT 470R2J-2- GP 50 49 R181 1 2 R157 3D3V_S0 52 2


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PDF TPS51120 CV125PA 83G/2G/2 400/533/667MHz 4Q801 TPS51124 533/667MHz 945PM sl8z4 diagram HANNSTAR j mv 4 g792 M54P PDTA144E sl8yb M54-p diagram HANNSTAR k mv EC565 hy5ps561621afp-25
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Not Available

Abstract: No abstract text available
Text: Voltage Drain-Source Voltage Drain-Source Current Symbol Ibias f Pi Po ηd Gp Vgs Vds Ids , 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 3.6 3.6 3.6 , 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 , 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 , 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 7.2 7.2 7.2 7.2 7.2 7.2 7.2 7.2 7.2 7.2 7.2


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PDF RFM04U6P 100mA, 200mA, 300mA, 400mA, 500mA, 600mA, 700mA
Not Available

Abstract: No abstract text available
Text: Gp (dB) 14.1 14.1 14.0 14.0 13.9 13.9 13.8 13.8 13.8 13.7 13.7 13.7 13.7 13.7 13.7 , Gp Vgs Vds Ids TOSHIBA Semiconductor web - www.semicon.toshiba.co.jp/eng/index/.html 2 , Drain Current Ids(mA) Drain Current Ids(mA) 160 160 6.0V 140 140 120 120 4.8V 100 100 , 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 3.6 3.6 3.6 3.6 3.6 3.6 , 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 4.8 4.8 4.8


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PDF 2SK3078A 110mA 470MHz 23dBm 23dBm 12ulations.
Not Available

Abstract: No abstract text available
Text: Drain-Source Current Symbol Ibias f Pi Po ηd Gp Vgs Vds Ids TOSHIBA Semiconductor web - , 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 , 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 4.8 4.8 4.8 4.8 4.8 4.8 4.8 4.8 , 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 , 24 24 25 25 Input Power Pi(dBm) Input Power Pi(dBm) 22 22 Power Gain Gp (dB) Power Gain


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PDF 2SK3079A 150mA, 250mA, 350mA, 450mA, 550mA, 650mA
diagram HANNSTAR k mv

Abstract: c245 transistor st diagram HANNSTAR j mv 4 1D05V G7922 M54-p yonah ich7m m54p PDTA144 56R2J-4-GP Wistron Corporation
Text: 2 2 2 3D3V_S0 U24 R598 10KR2J-3- GP 31 22 25 32 34 30 16 PCLK_KBC PCLK_LAN PCLK_PCM , : 100/96MHz R597 10KR2J-3- GP 1 1 2 1 2 1 1 MINI 2 2 1 2 1 2 2 DY 2 3 16 PM_STPPCI# 11,18 SMBC_ICH 11,18 SMBD_ICH 33R2J-2- GP PCLKCLK0 33R2J-2- GP PCLKCLK1 22R2J-2- GP PCLKCLK2 33R2J-2- GP PCLKCLK3 22R2J-2- GP 33R2J-2- GP SS_SEL 33R2J-2- GP ITP_EN 1 2 R174 10KR2J-3- GP 56 3 4 5 9 8 55 46 47 14 15 , SC20P50V2JN-1GP C225 1 2 2 50 GEN_XTAL_OUT 49 1 2 R154 470R2J-2- GP R177 1 2 22R2J-2- GP R181 1 2


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PDF TPS51120 83G/2G/2 400/533/667MHz CV125PA -1M-0111 4A901 TPS51124 533/667MHz diagram HANNSTAR k mv c245 transistor st diagram HANNSTAR j mv 4 1D05V G7922 M54-p yonah ich7m m54p PDTA144 56R2J-4-GP Wistron Corporation
diagram HANNSTAR k mv

Abstract: SL8z4 Wistron Corporation RE144B WISTRON power sequence C828 transistors 1D05V M54-p sl8yb EC255
Text: 2 2 2 2 2 2 2 3D3V_S0 U24 R598 10KR2J-3- GP 31 22 25 32 34 30 16 PCLK_KBC , SS_SEL 1 H/L: 100/96MHz R597 10KR2J-3- GP 1 1 2 1 2 1 1 MINI 2 2 1 2 1 2 2 DY 2 3 16 PM_STPPCI# 11,18 SMBC_ICH 11,18 SMBD_ICH 33R2J-2- GP PCLKCLK0 33R2J-2- GP PCLKCLK1 22R2J-2- GP PCLKCLK2 33R2J-2- GP PCLKCLK3 22R2J-2- GP 33R2J-2- GP SS_SEL 33R2J-2- GP ITP_EN 1 2 R174 10KR2J-3- GP 1 2 1 2 , SC27P50V2JN-2- GP C225 1 2 3D3V_S0 SC27P50V2JN-2- GP 2 50 GEN_XTAL_OUT 49 1 2 R154 470R2J-2- GP R177


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PDF TPS51120 CV125PA 83G/2G/2 400/533/667MHz 4A901 TPS51124 533/667MHz TPS51100 diagram HANNSTAR k mv SL8z4 Wistron Corporation RE144B WISTRON power sequence C828 transistors 1D05V M54-p sl8yb EC255
MOSFET TOSHIBA 2015

Abstract: No abstract text available
Text: 3.707 3.864 4.018 4.159 4.315 4.436 Gp (dB) 14.1 14.1 14.1 14.1 14.0 14.1 14.1 14.2 , ηd Gp Vgs Vds Ids TOSHIBA Semiconductor web - www.semicon.toshiba.co.jp/eng/index/.html 2 , 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 , 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 , 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50


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PDF 2SK3476 100mA, 300mA, 500mA, 700mA, 900mA MOSFET TOSHIBA 2015
Not Available

Abstract: No abstract text available
Text: 7.73 + j10.17 - 20-140 20 40 60 80 100 120 140 20-140 20 40 60 80 100 120 140 20-140 20 40 60 80 100 120 140 20-140 20 40 60 80 100 120 140 20-140 20 40 60 80 100 120 140 No Item 1 Selection Guide - 2 Bias Current Characteristics 3 Test , No - 46 20-140 20 40 60 80 100 120 140 20-140 20 40 60 80 100 120 140 20-140 20 40 60 80 100 120 140 20-140 20 40 60 80 100 120 140 20-140 20 40 60 80 100


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PDF RFM01U7P 100mA, 120mA, 140mA 520MHz
2SC102 transistor

Abstract: 2sc102 TK30556 2N2902 1763-0625 2N1103 2SC519 2SC520 TK30557 TK30558
Text: 7.0 7.0 140 40 110 7.0 5.0 5.0 120 30 100 700uA 5.0mA 1Om0 4.00 2.00 5.00 4.0 2.0 1.0 15 15 50 0 70 , 2N2902 7 14m$ 7 14m$ 729m 71 0 71 0 40 0 SJ SJ ss 10 10 750m 2.0 2.0 500m 140 165 120 20 20 10 125 150 , 7,5 7.5 7.5 1.0 1.0 1.0 150 140 140 12 12 12 150 120 120 1.0u5 I.OuS 1.0uS 150 150 150 2.0 2.0 2.0 , 800m 800m 100 100 100 5.0 5.0 5.0 3.0 3.0 3.0 50 100 200 4.0 4.0 4.0 30 60 140 1Om0 10m 10m 5.0 5.0 , # 57 M IOC M10D SDT1250 800m 800m 800m 100 100 140 10 10 5.0 3.0 3.0 1.0 200 300 250 4.0 4.0 8.0 140


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PDF NPN110. buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2SC102 transistor 2sc102 TK30556 2N2902 1763-0625 2N1103 2SC519 2SC520 TK30557 TK30558
2007 - 7547

Abstract: M37547G2FP M37547G2-XXXFP M37547G4FP M37547G4-XXXFP
Text: 7546/7547 Group Standard Characteristics M37546G2-XXXSP/ GP /HP,M37546G4-XXXSP/ GP /HP,M37547G2-XXXFP,M37547G4-XXXFP, M37546G2SP/ GP /HP,M37546G4SP/ GP /HP,M37547G2FP,M37547G4FP Standard Characteristics Example , 7546/7547 Group Standard Characteristics M37546G2-XXXSP/ GP /HP,M37546G4-XXXSP/ GP /HP,M37547G2-XXXFP,M37547G4-XXXFP, M37546G2SP/ GP /HP,M37546G4SP/ GP /HP,M37547G2FP,M37547G4FP At 8 MHz double-speed mode, increment , 7546/7547 Group Standard Characteristics M37546G2-XXXSP/ GP /HP,M37546G4-XXXSP/ GP /HP,M37547G2-XXXFP


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PDF M37546G2-XXXSP/GP/HP M37546G4-XXXSP/GP/HP M37547G2-XXXFP M37547G4-XXXFP, M37546G2SP/GP/HP M37546G4SP/GP/HP M37547G2FP M37547G4FP 7547 M37547G4FP M37547G4-XXXFP
Not Available

Abstract: No abstract text available
Text: Drain-Source Voltage Drain-Source Current Symbol Ibias f Pi Po ηd Gp Vgs Vds Ids TOSHIBA , 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 , 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 , 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 , 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95


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PDF RFM12U7X 150mA, 350mA, 550mA, 750mA, 950mA, 1150mA
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