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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

GP 005 DIODE Datasheets Context Search

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Mitsubishi M54564

Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Text: M54523P/FP M54525AGP M54526P/FP M54532P/FP M54585P/FP/KP M54666P M63823P/FP/ GP M63826P/FP/ GP , M54577P M63802P/FP/ GP /KP M63803P/FP/ GP /KP M63804P/FP/ GP /KP M63805P/FP/KP M63806P/FP/KP M63807P/FP/KP M63812P/FP/ GP /KP M63813P/FP/ GP /KP M63814P/FP/ GP /KP M63815P/FP/KP M63816P/FP/KP M63817P/FP/KP M54560P , 4525 3802 3823 A P GP KP FP Package type.P : DIP type FP/ GP : SOP type KP : SSOP type , ) operation diode Input diode 1 M54513P 18P4G 8 k k H Sink 50 40 k k


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PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
2011 - mos 4069

Abstract: No abstract text available
Text: +/- 0.05 1 1.0+/- 0.05 FEATURES 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp , (dBm) 20 25 60 50 6 5 4 3 2 1 0 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Idd Gp Pout 50 40 30 20 10 , 30 25 20 15 10 5 0 0 5 10 15 Pin(dBm) 20 25 D Idd Gp 60 50 40 30 20 10 0 6 5 4 3 2 1 0 0 0.05 , 0.05 0.1 0.15 Pin(W) 0.2 0.25 0.3 0 50 5 4 3 2 1 0 Gp 40 30 20 10 Idd 0 0 5 10 15 Pin , 3 2 1 Idd 0 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Gp Gp 40 30 20 40 30 20 10 0 Idd 10 15


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PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Oct2011 mos 4069
2011 - Not Available

Abstract: No abstract text available
Text: =5.0Wtyp., Gp =14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode , 10 15 Pin(dBm) 20 6 60 5 4 40 3 30 Gp Idd 10 0 0 0.05 0.1 , Pout 5 50 4 40 3 30 Gp 2 20 Idd 1 10 0 0 0 0.05 0.1 , D 70 60 50 4 40 3 30 Gp 1 0 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 , 6 60 D 0.05 7 Drain Effi(%) Pout(dBm) , Gp (dB), Idd(A) Pout 10 Pin-Po


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PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz
2011 - RD04HMS2

Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
Text: protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/- 0.05 For output stage of high , 6 5 4 3 2 1 0 0 0.05 0.1 0.15 Pin(W) 0.2 0.25 0.3 Idd Gp Pout Gp 50 40 30 20 10 0 40 30 , 20 10 0 6 5 4 3 2 1 0 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Idd Gp Pout 50 40 30 20 10 0 , Drain Effi(%) 60 50 Pout 40 30 Gp 20 10 Idd 0 0.05 0.1 0.15 Pin(W) 0.2 0.25 0.3 0 50 5 4 3 2 1 , 5 4 3 2 1 0 0 0.05 0.1 50 40 30 Gp 20 10 Idd 0 0.25 0.3 10 15 Pin(dBm) 20 25


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PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Handling Precautions for MOSFET 043mm 14dBtyp
2010 - RD04HMS2

Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
Text: =950MHz 2. Integrated gate protection diode 1.0+/- 0.05 FEATURES 2 INDEX MARK (Gate) Terminal , 70 30 0.1 8 80 Drain Effi(%) Pout(dBm) , Gp (dB), Idd(A) 9 90 35 0.05 , 60 D 0.05 7 Drain Effi(%) Pout(dBm) , Gp (dB), Idd(A) Pout 10 Pin-Po , 15 Pin(dBm) 20 20 Gp 10 Idd 0 0 0 25 0 0 0.05 0.1 0.15 0.2 Pin , ), Idd(A) 7 D 5 Pout(dBm) , Gp (dB), Idd(A) 0.1 D Pout 20 0 0.05 Pin-Po


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PDF RD04HMS2 175MHz, 950MHz, 14dBtyp. 950MHz UHF/890-950MHz RD04HMS2 JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
2011 - RD02MUS2

Abstract: No abstract text available
Text: diode Pout>2W, Gp >16dB INDEX MARK (Gate) 0.2+/- 0.05 0.9+/-0.1 Terminal No. 1.Drain (output , specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/- 0.05 6.0+/-0.15 0.2+/- 0.05 amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. 1 2 3.5+/- 0.05 (0.22) 2.0+/- 0.05 3 (0.25) (0.25) FEATURES ·High power gain: @Vdd=7.2V,f , containing more than85% lead.) Publication Date : Oct2011 1 (0.22) 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05


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PDF RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz) 520MHz) Oct2011
2011 - Not Available

Abstract: No abstract text available
Text: Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/- 0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 specifically designed for VHF/UHF RF power 2 2.0+/- 0.05 diode from gate to source for ESD protection. 1.0+/- 0.05 4.9+/-0.15 This device has an internal monolithic zener 3.5+/- 0.05 1 amplifiers applications. INDEX MARK (Gate) FEATURES 0.2+/- 0.05 Pout>2W, Gp >16dB @Vdd=7.2V,f=175MHz, 520MHz •High


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PDF RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz)
1985 - darlington array

Abstract: ULN7003A ULN-7003A ULN7003LW flyback bsc
Text: Dwg. GP -018B SWITCHING DELAY TEST CIRCUIT V in 50% 50% 0 A Zener diode can be used to , diode flyback techniques are used. The increased flyback voltage provides a much faster inductive load , Zener voltage plus the load supply voltage plus the internal diode forward voltage must not exceed the , V CC V CE(SAT) OUTPUT CURRENT I OUT IC ZENER CLAMP V in DIODE CLAMP I CEX , - 2.7 V - 15 25 pF Turn On, IC = 250 mA - 0.05 1.0 µs Turn Off


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PDF ULN7003A ULN7003LW ULN7003A ULN7003LW MA-008-16A darlington array ULN-7003A flyback bsc
2006 - diode gp 434

Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: .) MITSUBISHI ELECTRIC 1/9 17 Jan. 2006 (0.22) 3 (0.25) APPLICATION RD07MVS2 3.5+/- 0.05 1.0+/- 0.05 4.9+/-0.15 1 0.9+/-0.1 ·High power gain: Pout>7W, Gp >10dB @Vdd=7.2V,f , diode 0.2+/- 0.05 0.2+/- 0.05 FEATURES 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 (0.22) OUTLINE , RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/- 0.05 , applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD


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PDF RD07MVS2 175MHz 520MHz RD07MVS2-101 diode gp 434 RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
2006 - RD02MUS2

Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Text: . 2006 (0.22) 3 (0.25) 0.2+/- 0.05 ·High power gain: Pout>2W, Gp >16dB @Vdd=7.2V,f , PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 0.2+/- 0.05 (0.22) 6.0+/-0.15 1.0+/- 0.05 2.0+/- 0.05 1 4.9+/-0.15 RD02MUS2 is , . This device have an interal monolithic zener diode from gate to source for ESD protection. DRAWING 2 3.5+/- 0.05 OUTLINE DESCRIPTION FEATURES APPLICATION For output stage of high power


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PDF RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
2005 - 3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL 3SK112 3SK78 2SC2509
Text: S-MINI MINI 1SV308 JDP2S01E JDP2S04E Single PIN Diode 1SV128 USC AGC , S-MINI 1SV225 1SV228 JDV3C11 Single S-MINI 1SV160 Tuning AFC Varicap Diode 1SV252 , JDP2S02T S-MINI PIN Diode 1SV128 USC AGC 1SV312 JDP4P02U 1SV101 , Diode Tuning S-MINI (double type) 1SV242 USC 1SV214 ESC 1SV278 USC 1SV216 UHF AFC Diode VHF to UHF SMQ 3SK195 3SK225 3SK226 3SK292 USQ 3SK259 3SK257 3SK258


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL 3SK112 3SK78 2SC2509
2010 - RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: DRAWING 6.0+/-0.15 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 0.2+/- 0.05 (0.22) DESCRIPTION 2.0+/- 0.05 High power gain and High Efficiency. Gp >13.2dB 58%min. (175MHz) Gp > 12.4dB 58%min. (527MHz) Gp > 11.5dB 58%Typ. (870MHz) Integrated gate protection diode . 2 3.5+/- 0.05 FEATURES 1.0+/- 0.05 4.9+/-0.15 1 APPLICATION For output stage of high power amplifiers in VHF/UHF-band mobile radio sets. The recommended frequency is 135-527MHz. 0.9+/-0.1 0.2+/- 0.05 INDEX MARK


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
2009 - RD07MUS2B

Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Text: +/- 0.05 1.0+/- 0.05 4.9+/-0.15 High power gain and High Efficiency. Gp >13.2dB 58%min. (175MHz) Gp > 12.4dB 58%min. (527MHz) Gp > 11.5dB 58%Typ. (870MHz) Integrated gate protection diode . 2 , DRAWING 6.0+/-0.15 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 0.2+/- 0.05 (0.22) RD07MUS2B is a MOS , ) 0.9+/-0.1 0.2+/- 0.05 For output stage of high power amplifiers in VHF/UHF-band mobile radio , VGSS Pch Pin ID Tch Tstg Rth j-c 3.5+/- 0.05 1 FEATURES MITSUBISHI RF POWER MOS FET


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
2009 - RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 RD07M 329J gp 817 mitsubishi MOSFET gp 520 diode j-120
Text: +/- 0.05 1.0+/- 0.05 4.9+/-0.15 High power gain and High Efficiency. Gp >13.2dB 58%min. (175MHz) Gp > 12.4dB 58%min. (527MHz) Gp > 11.5dB 58%Typ. (870MHz) Integrated gate protection diode . 2 , DRAWING 6.0+/-0.15 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 0.2+/- 0.05 (0.22) RD07MUS2B is a MOS , ) 0.9+/-0.1 0.2+/- 0.05 For output stage of high power amplifiers in VHF/UHF-band mobile radio , VGSS Pch Pin ID Tch Tstg Rth j-c 3.5+/- 0.05 1 FEATURES MITSUBISHI RF POWER MOS FET


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 RD07M 329J gp 817 mitsubishi MOSFET gp 520 diode j-120
2008 - RD07MUS2B

Abstract: RD07MUS2
Text: +/- 0.05 1.0+/- 0.05 4.9+/-0.15 High power gain and High Efficiency. Gp >13.2dB 58%min. (175MHz) Gp > 12.4dB 58%min. (527MHz) Gp > 11.5dB 58%Typ. (870MHz) Integrated gate protection diode . 2 , DRAWING 6.0+/-0.15 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 0.2+/- 0.05 (0.22) RD07MUS2B is a MOS , ) 0.9+/-0.1 0.2+/- 0.05 For output stage of high power amplifiers in VHF/UHF-band mobile radio , VGSS Pch Pin ID Tch Tstg Rth j-c 3.5+/- 0.05 1 FEATURES MITSUBISHI RF POWER MOS FET


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS2
2010 - RD07MUS2B

Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 F7638 AN-VHF-053 AN-UHF-106
Text: amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 (0.22) 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 1 4.9+/-0.15 1.0+/- 0.05 High power gain and High Efficiency. Typical Po Gp D (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode . 2 3 (0.25) (0.25 , RD07MUS2B 7W 0.2+/- 0.05 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz , =527MHz,Idq=250mA,Zg=50 Load VSWR=20:1(All Phase) * 0.2+/- 0.05 0.9+/-0.1 APPLICATION MIN 0.5 7


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PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 F7638 AN-VHF-053 AN-UHF-106
1999 - BCR192W

Abstract: SPD30N06S2L-13 a3548 st2 357 b
Text: TrilithIC BTS 781 GP Data Sheet 1 Overview 1.1 Features · · · · · · · · , with hysteresis P-TO263-15-1 Type Ordering Code Package BTS 781 GP Q67006-A9526 P-TO263-15-1 1.2 Description The BTS 781 GP is part of the TrilithIC family containing three dies , the BTS 781 GP can be used in H-bridge- as well as in any other configuration. The double high-side , Sheet 1 2002-06-28 BTS 781 GP 1.3 Pin Configuration (top view) Molding Compound NC


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PDF P-TO263-15-1 BCR192W SPD30N06S2L-13 a3548 st2 357 b
2005 - FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: VCEO (V) IC hFE PC fT (Typ.) Cre Gp (GC°)/NF (Typ.) Cob , TG2006F 35 () Po > 21dBmw, Gp = 23dB @F = 1.9 GHz, Vd = 3 V, It = 130mA [ 3 ] 11 , S-MINI MINI 1SV308 JDP2S01E JDP2S04E Single PIN Diode 1SV128 USC AGC , S-MINI SMQ 1SV237 USM 1SV252 USQ PIN Diode Double 1SV312 JDP4P02U , S-MINI 1SV225 1SV228 JDV3C11 Single S-MINI 1SV160 Tuning Tuning AFC Varicap Diode


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
2011 - AN-UHF-098

Abstract: No abstract text available
Text: designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 0.2+/- 0.05 (0.22) DESCRIPTION High power gain and High Efficiency. Typical Po Gp D , diode . 2.0+/- 0.05 2 3.5+/- 0.05 FEATURES 1.0+/- 0.05 4.9+/-0.15 1 APPLICATION 0.9+/-0.1 0.2+/- 0.05 INDEX MARK (Gate) (0.25) (0.22) 3 (0.25) Terminal No. 1 , =+25°C Vdd=7.2V Pin=0.3W Idq=250mA d Gp 8 40 Pout(W) , Idd(A) 40 d(%) Po(dBm) , Gp


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PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) AN-UHF-098
2000 - TSOP65P640X120-25M

Abstract: TSOP65 A6276ELWTR-T Direct Replacement SANKEN 16-BIT LED DRIVER WITH SHIFT REGISTER AND LATCH
Text: = 50oC/W 20 TA = +25oC VDD = 5 V RQJA = 75oC/W 0 0 20 40 60 80 100 Dwg. GP -062-11 0 0 20 40 60 80 100 Dwg. GP -062-6 DUTY CYCLE IN PER CENT 100 VCE = 1 V DUTY CYCLE IN PER CENT , 40 60 80 100 Dwg. GP -062-10 0 0 20 40 60 80 100 Dwg. GP -062-7 DUTY CYCLE IN PER CENT DUTY , RQJA = 50oC/W 0 0 20 40 60 80 100 Dwg. GP -062-9 0 0 20 40 60 80 100 Dwg. GP -062-8 DUTY CYCLE , 40 20 TA = +25oC REXT = 500 7 0 0 0.5 1.0 VCE IN VOLTS Dwg. GP -063 1.5 2.0 Allegro


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PDF A6276 16-Bit TB62706BN/BF TSOP65P640X120-25M TSOP65 A6276ELWTR-T Direct Replacement SANKEN 16-BIT LED DRIVER WITH SHIFT REGISTER AND LATCH
2000 - A6276

Abstract: Allegro A6276
Text: 0 20 40 60 80 100 Dwg. GP -062-11 0 0 20 40 60 80 100 Dwg. GP -062-6 DUTY CYCLE IN PER CENT , +50oC VDD = 5 V RQJA = 75oC/W 0 0 20 40 60 80 100 Dwg. GP -062-10 0 0 20 40 60 80 100 Dwg. GP , V 20 TA = +85oC VDD = 5 V RQJA = 50oC/W 0 0 20 40 60 80 100 Dwg. GP -062-9 0 0 20 40 60 80 100 Dwg. GP -062-8 DUTY CYCLE IN PER CENT DUTY CYCLE IN PER CENT TYPICAL CHARACTERISTICS , Dwg. GP -063 1.5 2.0 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts


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PDF A6276 16-Bit TB62706BN/BF Allegro A6276
2011 - marking 7W 66

Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Text: applications. 4.6+/- 0.05 3.3+/- 0.05 0.8+/- 0.05 1 4.9+/-0.15 1.0+/- 0.05 2 FEATURES High power gain and High Efficiency. Typical Po Gp D (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode . 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/- 0.05 , Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING 6.0+/-0.15 0.2+/- 0.05 (0.22) DESCRIPTION RD07MUS2B , . *: 175MHz spec. is 0.6W Publication Date : Oct2011 1 (0.22) 3.5+/- 0.05 2.0+/- 0.05 < Silicon


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PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
2000 - TSOP65P64

Abstract: A6276 Allegro A6275 TSOP65P640X120-25M A6276SLWTR-T A6276ELPTR-T A6276EA-T A6275 201H tsop65
Text: DUTY CYCLE IN PER CENT Dwg. GP -062-6 Dwg. GP -062-11 100 100 80 VCE = 2 V VCE = 3 V , PER CENT Dwg. GP -062-10 Dwg. GP -062-7 Allegro MicroSystems, Inc. 115 Northeast Cutoff , 100 DUTY CYCLE IN PER CENT DUTY CYCLE IN PER CENT Dwg. GP -062-8 Dwg. GP -062-9 TYPICAL , +25 C REXT = 500 20 0 0 0.5 1.0 1.5 2.0 VCE IN VOLTS Dwg. GP -063 Allegro , Infrared 1.2 ­ 1.5 V 60 40 20 0 100 diode (VZ), or a series string of diodes


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PDF A6276 16-Bit TB62706BN/BF A6276 24-pin TSOP65P64 Allegro A6275 TSOP65P640X120-25M A6276SLWTR-T A6276ELPTR-T A6276EA-T A6275 201H tsop65
ptih-8-4p

Abstract: ptih-8 PT-420 adjustable zero span circuit standard process to Pressure transmitter calibration e5cs
Text: Accuracy Linearity (B.F.S.L.): 0.25% of span Hysteresis: 0.1% of span Repeatability: 0.05 % of span 1 , suppressor diode for high voltage protection Vibration Protection: Internal electronics 100% potted with a hard setting compound Approvals: CE, GP , IS and HAZ is available on all models s PT-420 IS , . Ordering Information PT-420 ­ ­ ­ ­ Configuration (see Options Table) GP General purpose , terminals (standard, available on GP and IS models) E2 DIN 43650 w/ 1/2 NPTM conduit connection (available


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PDF PT-420 FAL36S ptih-8-4p ptih-8 adjustable zero span circuit standard process to Pressure transmitter calibration e5cs
1999 - GP 841 Diode

Abstract: BCR192W GPS05123 GPT09151
Text: TrilithIC BTS 781 GP Target Data Sheet 1 Overview 1.1 Features · · · · · · , Under-voltage detection with hysteresis P-TO263-15-1 Type Ordering Code Package BTS 781 GP on request P-TO263-15-1 1.2 Description The BTS 781 GP is part of the TrilithIC family containing , pins, so the BTS 781 GP can be used in H-bridge- as well as in any other configuration. The double , -16. Target Data Sheet 1 2001-10-31 BTS 781 GP 1.3 Pin Configuration (top view) Molding


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Supplyframe Tracking Pixel