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GMM3X60-015X2-SMDSAM datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
GMM3X60-015X2-SMDSAM GMM3X60-015X2-SMDSAM ECAD Model IXYS FETs - Arrays, Discrete Semiconductor Products, MODULE 3 PHASE FULL BR MOSFET Original PDF

GMM3X60-015X2-SMDSAM Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - 3x60-015X2

Abstract: IF110 smd diode g6 smd diode code g6 SMD MARKING g3 smd L2 diode smd diode code g4 smd diode code g3 S3 marking DIODE marking G3
Text: GMM3x60- 015X2 Three phase full Bridge VDSS =150V = 57A ID25 RDSon typ. = 17mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , dimensions. © 2011 IXYS All rights reserved 20110307 1-3 GMM3x60- 015X2 Source-Drain Diode , 20110307 2-3 e n t a t iv e GMM3x60- 015X2 Ordering Part Name & Packing


Original
PDF GMM3x60-015X2 IF110 ID110 3x60-015X2 3x60-015X2 IF110 smd diode g6 smd diode code g6 SMD MARKING g3 smd L2 diode smd diode code g4 smd diode code g3 S3 marking DIODE marking G3
2010 - SMD mosfet MARKING code TC

Abstract: smd diode g6 SMD MARKING CODE s4 IF110 smd diode code g6 diode L2 smd smd diode marking code L2 smd diode code g3 marking G3 S3 marking DIODE
Text: GMM3x60- 015X2 Three phase full Bridge VDSS =150V = 57A ID25 RDSon typ. = 17mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , dimensions. © 2010 IXYS All rights reserved 20100924 1-3 GMM3x60- 015X2 Source-Drain Diode , 20100924 2-3 e n t a t iv e GMM3x60- 015X2 Ordering Part Name & Packing


Original
PDF GMM3x60-015X2 IF110 ID110 3x60-015X2 3x60-015X2 SMD mosfet MARKING code TC smd diode g6 SMD MARKING CODE s4 IF110 smd diode code g6 diode L2 smd smd diode marking code L2 smd diode code g3 marking G3 S3 marking DIODE
2010 - Not Available

Abstract: No abstract text available
Text: GMM3x60- 015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , IXYS All rights reserved 20100924 1-3 GMM3x60- 015X2 Source-Drain Diode Symbol Conditions , 2-3 e n t a t iv e GMM3x60- 015X2 Ordering Part Name & Packing Unit


Original
PDF GMM3x60-015X2 IF110 ID110 3x60-015X2 3x60-015X2
2012 - Not Available

Abstract: No abstract text available
Text: GMM3x60- 015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with , 1-6 GMM3x60- 015X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25 , reserved 20120618a 2-6 GMM3x60- 015X2 S1.S6 are only for the use of the gate drive as they , dimensions. © 2012 IXYS All rights reserved 20120618a 3-6 GMM3x60- 015X2 120 1.2 IDSS = 0.25 , 120 ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID 20120618a 4-6 GMM3x60- 015X2


Original
PDF GMM3x60-015X2 ID110 IF110 20120618a
2012 - smd diode marking code s3 transient

Abstract: smd part marking
Text: GMM3x60- 015X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current , dimensions. © 2012 IXYS All rights reserved 1-6 GMM3x60- 015X2 Source-Drain Diode Symbol Conditions , . 20120618a © 2012 IXYS All rights reserved 2-6 GMM3x60- 015X2 S1.S6 are only for the use of the , conditions and dimensions. © 2012 IXYS All rights reserved 3-6 GMM3x60- 015X2 1.2 IDSS = 0.25 mA , on-state resistance RDS(on) versus ID 20120618a © 2012 IXYS All rights reserved 4-6 GMM3x60- 015X2


Original
PDF GMM3x60-015X2 ID110 IF110 20120618a smd diode marking code s3 transient smd part marking
2010 - smd diode g6

Abstract: marking G3 IF110 GMM3x60-015X1
Text: No file text available


Original
PDF GMM3x60-015X1 IF110 ID110 3x60-015X1 3x60-015X1 smd diode g6 marking G3 IF110 GMM3x60-015X1
2009 - DIODE marking S4 57

Abstract: DIODE marking S6 57 smd diode code s1 96 smd diode .S6 22 DIODE marking S6 96 GMM3x60-015X1 smd diode g6 smd diode S4 96 marking G3 smd diode code g3
Text: No file text available


Original
PDF GMM3x60-015X1 IF110 ID110 3x60-015X1 3x60-015X1 DIODE marking S4 57 DIODE marking S6 57 smd diode code s1 96 smd diode .S6 22 DIODE marking S6 96 GMM3x60-015X1 smd diode g6 smd diode S4 96 marking G3 smd diode code g3
j2y transistor

Abstract: T15J10 mp4505 MP3002 MG50J6ES91 MP3103 2sb834 MG100M2CK1 MP4704 2sc497
Text: €” 2SC1959 — 2SC3422 2SA1359 2SB834 no 2SB1015 UH 2 SA 1015 x 2 2SA1349 2 SA1 015x2


OCR Scan
PDF O220AB O-126 j2y transistor T15J10 mp4505 MP3002 MG50J6ES91 MP3103 2sb834 MG100M2CK1 MP4704 2sc497
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