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GME0404-1 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
GME0404-1 GME0404-1 ECAD Model Others Discontinued Transistor Data Book 1975 Scan PDF

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BC406

Abstract: BC406B 10-N-0 BCY20 RT2460 D29A12 sj 45 D29A8 D29A9 50mJZ
Text: PE T018 A 65 GME0404-1 360m 200M5A 3.6m »J 40 30 5.0 5Ou§0 1.00 1Om0 20 tA PEA X45 66 , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits EMITTER ownrn Cob STRUC Y200 E 0 -TURE A 0 I T0200 D E (Fl 1 Ser 1 [_ * _ 50-65°C A 0- 70-80 , . SILICON PNP ■LOW POWER TRANSISTORS IN ORDER OF | 1 ) MAX COLLECTOR DISSIPATION 3J JJMAX. 2J [DERATE T , (V) LV> (V) (A) (A) (Vh (A) , (mhos) (ft) X.0001 (F) Ser. 1 D29A7 330m 63OM§0 3.3m ♦ J 50 40


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PDF CD932* 10On0 CD942* CD952Â CD962* CD972Â CD982Â MD1T2605 T0122 BC406 BC406B 10-N-0 BCY20 RT2460 D29A12 sj 45 D29A8 D29A9 50mJZ
usaf516es047m

Abstract: usaf517es060m R110 BC406 2sc107 usaf516es048m 2SC114 D29A8 D29A7 C0912
Text: PE T018 A 65 GME0404-1 360m 200M5A 3.6m »J 40 30 5.0 5Ou§0 1.00 1Om0 20 tA PEA X45 66 , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits EMITTER ownrn Cob STRUC Y200 E 0 -TURE A 0 I T0200 D E (Fl 1 Ser 1 [_ * _ 50-65°C A 0- 70-80 , . SILICON PNP ■LOW POWER TRANSISTORS IN ORDER OF | 1 ) MAX COLLECTOR DISSIPATION 3J JJMAX. 2J [DERATE T , (V) LV> (V) (A) (A) (Vh (A) , (mhos) (ft) X.0001 (F) Ser. 1 D29A7 330m 63OM§0 3.3m ♦ J 50 40


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 usaf516es047m usaf517es060m R110 BC406 2sc107 usaf516es048m 2SC114 D29A8 D29A7 C0912
BC406

Abstract: 2SA446 BSW33 BC405 RT2460 bsv55 D29A10 D29A12 D29A7 D29A8
Text: PE T018 A 65 GME0404-1 360m 200M5A 3.6m »J 40 30 5.0 5Ou§0 1.00 1Om0 20 tA PEA X45 66 , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits EMITTER ownrn Cob STRUC Y200 E 0 -TURE A 0 I T0200 D E (Fl 1 Ser 1 [_ * _ 50-65°C A 0- 70-80 , . SILICON PNP ■LOW POWER TRANSISTORS IN ORDER OF | 1 ) MAX COLLECTOR DISSIPATION 3J JJMAX. 2J [DERATE T , (V) LV> (V) (A) (A) (Vh (A) , (mhos) (ft) X.0001 (F) Ser. 1 D29A7 330m 63OM§0 3.3m ♦ J 50 40


OCR Scan
PDF 2SA372 U7003 2SA446 450MI 450MSA 10Om0 2N960/46 2N962/46 460MI 460M5 BC406 BSW33 BC405 RT2460 bsv55 D29A10 D29A12 D29A7 D29A8
2n2397

Abstract: 2N328 D29A8 D29A7 D29A12 D29A10 BC406 BC404 2sc113 MM4048
Text: PE T018 A 65 GME0404-1 360m 200M5A 3.6m »J 40 30 5.0 5Ou§0 1.00 1Om0 20 tA PEA X45 66 , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits EMITTER ownrn Cob STRUC Y200 E 0 -TURE A 0 I T0200 D E (Fl 1 Ser 1 [_ * _ 50-65°C A 0- 70-80 , . SILICON PNP ■LOW POWER TRANSISTORS IN ORDER OF | 1 ) MAX COLLECTOR DISSIPATION 3J JJMAX. 2J [DERATE T , (V) LV> (V) (A) (A) (Vh (A) , (mhos) (ft) X.0001 (F) Ser. 1 D29A7 330m 63OM§0 3.3m ♦ J 50 40


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PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2n2397 2N328 D29A8 D29A7 D29A12 D29A10 BC406 BC404 2sc113 MM4048
MM4048

Abstract: BC406 usaf518es065 MA7809 L17D D29A9 D29A8 D29A7 D29A12 D29A10
Text: PE T018 A 65 GME0404-1 360m 200M5A 3.6m »J 40 30 5.0 5Ou§0 1.00 1Om0 20 tA PEA X45 66 , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits EMITTER ownrn Cob STRUC Y200 E 0 -TURE A 0 I T0200 D E (Fl 1 Ser 1 [_ * _ 50-65°C A 0- 70-80 , . SILICON PNP ■LOW POWER TRANSISTORS IN ORDER OF | 1 ) MAX COLLECTOR DISSIPATION 3J JJMAX. 2J [DERATE T , (V) LV> (V) (A) (A) (Vh (A) , (mhos) (ft) X.0001 (F) Ser. 1 D29A7 330m 63OM§0 3.3m ♦ J 50 40


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PDF /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea MM4048 BC406 usaf518es065 MA7809 L17D D29A9 D29A8 D29A7 D29A12 D29A10
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF GME0404-2 Freq200M
2n327

Abstract: D29A9 D29A8 D29A7 D29A12 D29A10 DP1010 BC406 A641 NPN transistor A611L
Text: PE T018 A 65 GME0404-1 360m 200M5A 3.6m »J 40 30 5.0 5Ou§0 1.00 1Om0 20 tA PEA X45 66 , Overlay 2. GERMANIUM PNP UNE n TYPE 1 No. 1 No. 4. SILICON PNf ! 5. SILICON NPN-Low Power Transits EMITTER ownrn Cob STRUC Y200 E 0 -TURE A 0 I T0200 D E (Fl 1 Ser 1 [_ * _ 50-65°C A 0- 70-80 , . SILICON PNP ■LOW POWER TRANSISTORS IN ORDER OF | 1 ) MAX COLLECTOR DISSIPATION 3J JJMAX. 2J [DERATE T , (V) LV> (V) (A) (A) (Vh (A) , (mhos) (ft) X.0001 (F) Ser. 1 D29A7 330m 63OM§0 3.3m ♦ J 50 40


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PDF FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V FT4023 2n327 D29A9 D29A8 D29A7 D29A12 D29A10 DP1010 BC406 A641 NPN transistor A611L
Tr431

Abstract: B1274 transistor BSF17 18DB6A 1N1525 dd04 cs1256hg 2N113 1N34A MP 18db2a
Text: I©RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12  , AM030 AW 35 R210 R210 R2*0 R210 R210 AS-4 AS-5 ASY14- 1 ASY14-2 AS V14-3 R210 R210 TR , -08 TR-12 " 'W itA y y '.T . TR-21 . <:y*f«6yv.y:;: yyyTR -21.'. y y iW S y y '."Y T ft-2 1 , ^ * 1 S :i S a i ; ; g y y T ig R S y x KyyyyiRtRysl: (RTR*5t A rm y:s:A®2T'M-y: y y - y , -2T ^ 1 : ^ \h 3 4 A \ . . AF239S AF240 AF3 AF4 AF5 TR-17 TR-17 IRTR


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PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 B1274 transistor BSF17 18DB6A 1N1525 dd04 cs1256hg 2N113 1N34A MP 18db2a
hep 154 silicon diode

Abstract: zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
Text: to be sure that collector, emitter, and 1 base lead connections are correct. In most cases , LE 1 2 3 50 103 104 105 134 135 151 153 154 156 157 158 159 160 161 162 165 , -41 DO-41 DO-41 TO-I8A TO-I8A DO-5 DO-5 DO-41 1 )0-41 1 )0-41 1 )0-41 1 )0-41 DO-41 C jw 90 ' a , )-30V 800mA Triae— 200V 8A 1 HEP Semiconductor Packaging Index HEP NO. 553 554 556 , -5 TO-5 TO-5 TO-5 TO-18 TO-72 (C) TO-5 TO- 1 TO- 1 TO-5 TO-66 TO-66 TO-3 Case 77 Case 77 TO


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PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
Text: .transistor 1 " contains more than 19000 different transistors and FET’s, all of which are listed , tabella comparativa tabla comparativa ■■1 r« r"n l*« 1 ,10 ($45*C) 0.20 (45°C) 0.20 (45®C) 0.20 (45°C) 0.20 (45®C) 50-250 125-250 52-235 , pnp pnp pnp AF-in AF-dr/end AF-in AF-in/dr AF-in/dr Ar-m, in 32/30 70/50 32/30 40/20 40/15 40/ 1 b , °C) 0.26 (25°C) 0.26 (25°C) ACY 50 ACY 5 1 ACY 52 ACY 55 ACZ10 AD 103 Ge Ge Ge Ge Ge Ge pnp pnp pnp


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
2007 - L7251-3.1

Abstract: B134G0943#1 AL133-00015.1 MPAW37.1 B133HTN01.1 A602192.1 ce6v14.1 L6284-3.1 1/transistor+ba41 MAR3-T13-144R7-0.1
Text: HEIGHT ( X DIMENSION) NO. OF CHIPS 1 2 3 4 5 UNLEADED ASSEMBLIES NN, NP .100 (2.54) .100 , 154 184 224 274 334 394 474 564 684 824 105 125 155 185 225 275 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 3 3 3 4 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 3 3 3 4 5 1 1 1 1 1 1


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PDF
2010 - AL133-00015.1

Abstract: L7251-3.1 AP6KE9.1 CSA107.1 A608569.1 1/CN0944 1+to+2+MIPI+buffer+IC
Text: Solderless splices CLOSED-END E F L E L Style 2 F Style 1 Style 2 Style 1 , Dimensions mm (in.) Tool No. YS-2622 YS-2216 YS-1614 YS-1210 YS-8S YA- 1 YA-2 YA-4 o o o o o o o o o o o o o o , ) (4.0 to 9.0) CE1(CE-100) CE2(CE-230) CE5(CE-550) CE8(CE-800) 2-SDW 0.5-SD 1 -SD 2-SD 5.5-SD 8-SD 2 1 , (.315) 22.2 (.874) 10.2 (.402) o o o o Nylon o o o o o o o 1 ,000 1 ,000 500 250 1 ,000 5,000 1 ,000 1 ,000 500 250 9.3 (.366) 12.0 (.472) 9.3 (.366) 12.0 (.472) Note: 1 ) Products with the JIS


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PDF E42024 LR20812 JQ0607003 YS-2622 YS-2216 YS-1614 YS-1210 BCT-0514 CE-800/CE-800V) AL133-00015.1 L7251-3.1 AP6KE9.1 CSA107.1 A608569.1 1/CN0944 1+to+2+MIPI+buffer+IC
UL E42024

Abstract: L7251-3.1 A612826.1 1/sn1350 th2167.1 CSA107.1 C2807 ys1614 LR20812 E42024
Text: Solderless splices ¿D ¿B E Style 1 F E L Actual Style 1 Style 2 CE1(CE , (.150) 7.2 (.283) 9.5 (.374) 28.0(1.102) 12.0 (.472) 1 9.5 (.374) 4.5 (.177) o o , 1.75) 1 -SD 15.2 (.598) 5.9 (.232) 8.0 (.315) 2.2 (.087) 5.0 (.197) 6.2 (.244 , to 1.75) 16 to 14 E YA-2 YA-4 22 to 16 ød L F YA- 1 Standard Style , splice. 686022 YS-2622 LR20812 Applicable Wire Note: 1 ) Products with the JIS mark conform


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PDF CE-100) CE-230) CE-550) CE-800) UL E42024 L7251-3.1 A612826.1 1/sn1350 th2167.1 CSA107.1 C2807 ys1614 LR20812 E42024
111L2

Abstract: 13007 h3 PEF41068FV1.1 L6284-3.1 DSTH506010.1 L7251-3.1 AL133-00015.1 j1 3003 E 13007 1/CN0944
Text:  1 MIL-M-38510/320C 6 March 1985_ SUPERSEDING MIL-M-38510/320B 28 February 1984 MILITARY , ioecification is approved for use by all Departments and Agencies of the Department of Defense. 1 . SCOPE , , cascadable Presettable 4-bit binary counter, cascadable Q3 Decade counter 04 4-bit binary counter 1 2 2 , -38510, appendix C) A F-l (14-lead, 1 /4" x 1 /4"), flat package i F-3 14-lead 3/16" x 1 /4"), flat package f D-l (14-lead, 1 /4" x 3/4"), dual-in-line package o c ; (U lead 1 /4" x 3/8"), flat package \ cl (terminal


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PDF MIL-M-38510/320C MIL-M-38510/320B MIL-M-38510, officei1985-505-038 111L2 13007 h3 PEF41068FV1.1 L6284-3.1 DSTH506010.1 L7251-3.1 AL133-00015.1 j1 3003 E 13007 1/CN0944
L7251-3.1

Abstract: L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 PEF3304EV2.1 DSTH506010.1 AU1329.1 A612826.1 PMB6256-V1.1
Text: 1 Datasheet D 2DFDD D 7!F D"#$FD 8F7 8%995&'7"D 1 1 %DC78C4E91 E59133AA14A38C4E119AA713A74EC8C4E1 1 CE17 , A59A8#1431FA1F7CEA91 %DC78C4E918813A@6C3A104C7A1AE681 1 /A1BA7C3C78C4E91 11 A38CE14&A3196D13EA 1 "01841">01 *AEA3D1+A973C8C4E1 ,-./01 1 AE2DA91 735C4C51 5C3A78CC8 1 83461 2AF1343FCE 1 8A7E4D4 1 69CE1 8&41 4FEC5C3A78C4ED1 FC7344EA91 D7A51 FF1 38"1 ,AF1 343FCE1 8A7E4D4 1 34C5A91 93A31 5C3A78CC8 1 8


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PDF 8C4E91 E59133AA14 13A74 8C4E19 98AF91 2DA15A C7A91967 91F42CDA1 CEA91 8C4E918 L7251-3.1 L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 PEF3304EV2.1 DSTH506010.1 AU1329.1 A612826.1 PMB6256-V1.1
th2167.1

Abstract: L7251-3.1 AL133-00015.1 NJW1167V QFP32 NJW1167FJ2 SDIP32 SSOP32 PMB6610RV2.1 TK1337.1
Text: CVB CVW CTH CTL CSR GND V+ Vref - 1 - NJW1167/A s SSOP32, SDIP32 INa INb 32 , 13 ADR CTL 20 14 SDA CSR 19 15 SCL Vref 18 16 No. 1 GND V+ 17 No V+ 1 INa 17 2 SR-FIL 18 Vref 3 , 28 TONE-Hb 13 ADR 29 LF1 LPF 1 14 SDA I2C 30 LF3 LPF 3 , TONE-Haa PORT0 GND AUX1 INa AUX0 V+ AGC1 INb OUTa Vref OUTW LF2 1


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PDF NJW1167/A NJW1167/ALPF NJW1167V NJW1167AL NJW1167FJ2 NJW1167: SSOP32, QFP32-J2 NJW1167A: th2167.1 L7251-3.1 AL133-00015.1 NJW1167V QFP32 NJW1167FJ2 SDIP32 SSOP32 PMB6610RV2.1 TK1337.1
L7251-3.1

Abstract: aa705 L6284-3.1 CD3E0P.1 1/CN0944
Text: 1 1234456734 1 89ABCDE1ACF8C19BCEF99BC3EC9C 1 1C3B1BEFCAB9911 DE51F33B31111E5 1 51 ! 1 "1!"51 #561$1%%&'1"61566561##"!71 D" 1 E5(5151!16!)5* 1 E51F33B31"561 E)E1)! 1 "51! 1 " 1 )! 1 "571+55!)1E)E1)! 1 "51 "615, 1 )!* 1 E51F33B31E5#1#6"(51655(561 5!( 1 E6")E1E)E1)! 1 ! 1 "1!"51)6571 +55!) 1 " 1 )! 1 "51"616"!) 1 )!* 1  1 #51-F$ 1 6 1 "1"561E)E561!5671


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PDF 89ABCDE1ACF DE51F D5665 1F/D15 E5165 L7251-3.1 aa705 L6284-3.1 CD3E0P.1 1/CN0944
1998 - SS10

Abstract: SS106 SS108 sh362 L7251-3.1 ce6v14.1 1/CN0944
Text: WR SULRU DSSURYDO EDVHG RQ WKH VDLG DFW1 7DEOH RI &RQWHQWV 41 *( 1 (5$/ 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 404 414 )HDWXUHV 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 406 415 3URGXFW 6HULHV 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 407 416 %ORFN 'LDJUDP 1 1 1 1 1


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PDF
ANI 1015

Abstract: LT 5251 TEA 1091 L7251-3.1 S11595.1 1/CN0944 PMB6610RV2.1
Text: for use by all Departments and Agencies of the Department of Defense. 1 . SCOPE 1.1 Scope. This , : Out!i ne 1etter Case outline (see MIL-M-38510 , appendix C) E D-2 (16 pin, 1 /4" x 7/8"), dual-in-line package F F-5 (16 pin, 1 /4" x 3/8"), flat-package 2 C-2 (20-terminal, .350" x .350"), square chip , ) Storage temperature range - -65 C to +150 C Maximum power dissipation (Pq) per gate _ 1 /- 55 roW , ) - - -.+ 1 65 ° C 7/ Maximum output current- - - - - - - - - - - -50 mA 1 / Must


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PDF MIL-M-38510/62A MIL-M-38510/62 MIL-M-3851D. MIL-M-38510/62A ANI 1015 LT 5251 TEA 1091 L7251-3.1 S11595.1 1/CN0944 PMB6610RV2.1
74hc

Abstract: SOT27-1 sot27 SOT109-1 SOT163-1 SOT402-1 SOT360-1 SOT38 SOT339-1 1/CN0944
Text: COUNT DIL SO SSOP TSSOP 74HC/HCT00 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT02 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT03 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT04 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCTU04 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT08 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT10 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1


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PDF 74HC/HCT00 OT27-1 OT108-1 OT337-1 OT402-1 74HC/HCT02 74hc SOT27-1 sot27 SOT109-1 SOT163-1 SOT402-1 SOT360-1 SOT38 SOT339-1 1/CN0944
A5B13

Abstract: cd 3301 1/sn1350 PMB6610RV2.1
Text: 1 12345671879 1 9A993 9!!9 1 193"1"#9"#$19 19%3"9$&1"1 CD51EF38E8111116 1  1  C1 !C 1"#D1$$%&'1 "DD1 1 (5)*5(1+61"#D*)1+1,-*5( 1 (+565*#- 1 (.- 1 ,*(1+-#5671 *( 1 "(51+651.5*01/56)571CD512 136#5#*16.#1651*#5)6#5( 1 * 1 #D51%&1#1D5/51D)D12 1#-56*571 12345671879 CD51 EF38E81  1 54,-5( 1 * 1  1 /5601 4-'1 -5


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PDF CD51EF 571CD512 5/51D 37BB44151373B44 -071CD51 D5614 71CD51 1EEC15 D5136 A5B13 cd 3301 1/sn1350 PMB6610RV2.1
D1911

Abstract: B36D
Text: 12345623782348239AB1C12D4E654FF52 1 1 DEFFE6 83D7D46 66 1 11 , (1B35711-1B3571*C 1 18581B6851/883+1 11 921%01=!16&1?81B5684361 11 , / 61) 1 < 1 &!43671717843&3813181%'()&() 1 *21/4+11 %'() 1 ,31B6851*21 4+1757134!3161884361 , ! % 1 '()&()11%'()5(E1757 1 11


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PDF 12345623782348239AB1C12D4E654FF E1469 81C51 581B6 81B56 1C178 F1712 65971B1 B62CBC65 87M128KS934567893 D1911 B36D
AL133-00015.1

Abstract: 48ED
Text: 12324232526272 123456789AB6CDC6E7C3F8 88BB63888 ACF 1 8!577B2D"82EFC77B28 #$%8 1 1 1 & #'8()*'&)98 1 21 3179764 18!"1 21 #$AA97B51$%B3F&3BF76B16AA%3 6B394'1 79 1 ()(*+&,51B91)+&,511 21 #$AA97B51%34-1%4B 1 $A1B91D-11 .3B9$B1/81 21 0E12 1 91$%6B119$BA$B1A9.71 21 8651BA76B$717641F*381B91 381 21 #$AA97B516AA%3 6B3941.3B , )<41B91 =*)EE4> 1 1 *11+*+ ,98 1 21 B79'13946%16411!9416$%1 /5/16AA%3 6B3941


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PDF 123456789AB6CDC6E7C3F8 577B2D C77B28 AA97B51 3BF76B 6B394 51B91 AA97B51 A1B91 381B91 AL133-00015.1 48ED
IL69M

Abstract: 436Z pal16l8-20 RAX 15 PAL VIHH programming pulse 74935
Text: , programmable logic, monolithic silicon 1 . SCOPE 1.1 complete part number. X 2 Pa^Lnu.nber. The part number , -38510, appendix C) n o ion i.s(i 1 /4" x 1 1 /16"), dual-in-line package R III ("lleriinal! .350» x .350"), square , . of 1 .» J" i«rovi?f this dociiwrt jjo» us(ng ^ sel f-addressed Kci"« "ip"»""* ,DD For° u26 , (soldering, 10 seconds) - - I ¡260'c Thermal resistance, junction-to-case (e,f) 1 /2/- is* mil m nocm , doc«.nt. shall be thoH 1 ste2 In the Issue of .». SPECIFICATION MILITARY MIL-M-38510 STANDARD


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PDF MIL-M-38510/506 MIL-M-38510. dev16R8-30/Texas PAL16R6-30/Texas PAL16R4-30/Texas PAL16L8-15/Texas PAL16R8-15/Texas PAL16R6-15/Texas PAL16R4-15/Texas CG0/01295 IL69M 436Z pal16l8-20 RAX 15 PAL VIHH programming pulse 74935
MIL-M-3B510

Abstract: No abstract text available
Text: use by all Departments and Agencies of the Department of Defense. 1 . SCOPE 1.1 Scope. ■Th,|s , -38510. 1-2.3 Case out!i nes. The case outlines shall be designated as follows: Outline letter A b C d h 1 2 1.3 Absolute maximum ratings Case outline (see MIL-M-38510, appendix C) F-l (14-lead, 1 /4" F - 3 (14-lead. 3/16' D-l (14-lead, 1 /4" F-2 (14-lead, 1 /4" F-4 (10-lead, 1 /4" A-2 (10-lead can) C-2 (20-terminal, carrier package x 1 /4"), flat package 1 /4" ), flat package dual-in-line package flat package flat


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PDF MIL-M-38510/102B MIL-M-38510/102A MIL-M-38510. den11fy MIL-M-3B510
Supplyframe Tracking Pixel