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GMA01U-AT1 - Bulk (Alt: GMA01U-AT1) GMA01U-AT1 ECAD Model
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GMA01U datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
GMA01U GMA01U ECAD Model Sanyo Semiconductor Epitaxial Planar Silicon Diode Original PDF
GMA01U GMA01U ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
GMA01U GMA01U ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
GMA01U GMA01U ECAD Model Others Silicon Diode Scan PDF
GMA01U GMA01U ECAD Model Others The Diode Data Book with Package Outlines 1993 Scan PDF
GMA01U-E GMA01U-E ECAD Model Sanyo Semiconductor DIODE SWITCHING 105V 0.12A 2DO-35 Original PDF

GMA01U Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - GMA01

Abstract: GMA01U
Text: Symbol Peak Reverse Voltage Conditions GMA01 GMA01U Unit VRM VR 60 105 55 , Current IR VR=55 (GMA01) 0.5 µA VR=75 ( GMA01U ) 0.5 µA 5 µA 3.0 pF 4.0 ns VR=100V ( GMA01U ) Interterminal Capacitance C Reverse Recovery TIme trr VR=0, f


Original
PDF EN1065C GMA01, 300mW DO-35 GMA01 GMA01U GMA01 GMA01U
2006 - GMA01U

Abstract: No abstract text available
Text: GMA01U Ordering number : EN1065D SANYO Semiconductors DATA SHEET Epitaxial Planar Silicon Diode GMA01U Ultrahigh-Speed Switching, Bias Stabilizing Applications Features · · · · · Glass sleeve structure. Allowable power dissipation : P=300mW max. Internal capacitance : c=3.0pF max , ) / 2239MO / D128MO / 1283KI, TS No.1065-1/3 GMA01U Package Dimensions Reverse Recovery Time Test , Temperature, Ta - °C 160 180 IT11424 No.1065-2/3 GMA01U Specifications of any and all


Original
PDF GMA01U EN1065D 300mW DO-35 GMA01U
GMA01U

Abstract: No abstract text available
Text: GMA01U No. N 1 0 6 5 D No.1065C GMA01U P=300mW max c=3.0pF max trr=4.0ns max DO-35 Absolute Maximum Ratings / Ta=25 VRM VR IFM IO IFSM P Tj Tstg - 105 unit V - 100 360 V mA 120 500 mA mA 300 175 , 8-3926 No.1065-1/3 GMA01U unit : mm (typ) 7801-001 trr 0.01µF D.U.T IF=10mA 0 VR , 80 100 120 , Ta - °C 140 160 180 IT11424 No.1065-2/3 GMA01U


Original
PDF GMA01U 1065C 300mW DO-35 92706DH TC-00000133 N188KN 62797GI BX-0698 GMA01U
2004 - GMA01

Abstract: GMA01U
Text: Symbol Peak Reverse Voltage Conditions GMA01 GMA01U Unit V RM 60 105 Reverse , Forward Voltage VF Reverse Current IR Conditions IF=1.5mA VR=55 (GMA01) VR=75 ( GMA01U , =0, f=1MHz VR=6V, IF=10mA, RL=50 µA 5 VR=100V ( GMA01U ) Reverse Recovery TIme Ratings min


Original
PDF EN1065C GMA01, 300mW DO-35 GMA01 GMA01U GMA01 GMA01U
GMA01

Abstract: GMA01U
Text: Ratings atTa = 25°C GMA01 GMA01U unit Peak Reverse Voltage VRM — 60 -105 V Reverse Voltage Vr , €”55V(GMA01) -0.5 pA Vr: = —75V ( GMA01U ) -0.5 pA Vr: = — 100V ( GMA01U ) -5 pA Interterminal


OCR Scan
PDF EN1065C 300mW DO-35 GMA01 GMA01U
DCC010

Abstract: DO-35 C3 gmb01 MARKING cp6
Text: SA0YO Q u i c k G u i d e To Small o l e Ver-y Rast Swi t c h l n g Di o d e s Electrical Characteristics/Ta-251 C Remarks N o . ( ):Marking General purpose DS442X GMA01 GMB01 High withstand Voltage DS446 DS462 GMA01U GMB01U GMA02 Low leakage DS441 Do-35 Do-34 D0-34S Do-35 Do-35 Do-34 D0-34S Do-34 Do-35 CP CP CP CP CP CP CP CP CP CP MCP MCP MCP MCP PCP PCP LL-34 LL-34 CP-6 CP-6 CP-6 A-l A-2 A-3 A-l A-l A-2 A-3 A-2 A-l C-l C-2 C-3 C-3 C-4 C-5 C-6 C-5 C-7 C-5 B D 80 DCG010(N6) DCJOlO(lff) OCGIO(PB) DCHIO(PC


OCR Scan
PDF Characteristics/Ta-251 DS442X GMA01 GMB01 DS446 DS462 GMA01U GMB01U GMA02 DS441 DCC010 DO-35 C3 MARKING cp6
DS442X

Abstract: GZB36C DSB010 DZB62 GZA20X GZS20X DS442 DS441 GZA2.0X LFB01L
Text: SANYO SEMICONDUCTOR CORP DTE D I 7WD7t DQOaSDI ? I T-O3-0( T- - " '•v.- " "•> s . - HIGH-SPEED SWITCHING DIODES Item ^VVhmW m . 30-40 50-60 " 70-80 * 90-100 200-300 "300-400 ! far tns) c - . ipF) : . ■■Remarlss .0.12 DS442 1 4 3 0.13 DS442X 2 2 DHD 0.20 DS446 4 3 0.10 DS441 - 6 Low leakage current DS462 DS464 - 10 High breakdown voltage MiniDHD 0.12 GMA01 GMA01U 4 3 GMB01L GMB01 4 3 Leadless 0.15 LFB01L LFB01 4 3 DSA010 4 4


OCR Scan
PDF DS442 DS442X DS446 DS441 DS462 DS464 GMA01 GMA01U GMB01L GMB01 DS442X GZB36C DSB010 DZB62 GZA20X GZS20X DS441 GZA2.0X LFB01L
dse010 tr e

Abstract: AL 360 DS441 GMB01 GMA02 AL200 GMA01 DS462 DS446 DCB010
Text: 200 0.5 10 60 GMA01U Do-34 A-2 100 120 360 1.5 0.68 100 5 10 4 GMB01U Do-34S A-3 100 120 360 1.5


OCR Scan
PDF DS442X Do-35 GMA01 Do-34 GMB01 Do-34S DS446 DS462 dse010 tr e AL 360 DS441 GMA02 AL200 DCB010
DSB010

Abstract: DS442X
Text: purpose DS442X GMA01 GMB01 High withstand Voltage DS446 DS462 GMA01U GMB01U GMA02 Low leakage DS441


OCR Scan
PDF Do-35 Do-34 Do-34S LL-34 DSB010 DS442X
d1878

Abstract: D1887 C4106 D1825 D1880 transistors D1878 c3987 D1651 C4161 k1459
Text: Series CP 90 DZF Series*Coaxial type 90 h GMAOl 89 il GMA01U 89 h GMB01 89 n GMBOIU 89 n GMA02 89 (S. B


OCR Scan
PDF A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1825 D1880 transistors D1878 c3987 D1651 C4161 k1459
d1684

Abstract: C3788 c4217 c2078 d1047 C4161 D1651 D1682 K1460 k2043
Text: DTM10-N II DTM12-N DZBseries Coaxial DZD Serie S CP Coaxial GMA01 il GMA01U il GMB01 Coaxial GMB01U H


OCR Scan
PDF 2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 c2078 d1047 C4161 D1651 D1682 K1460 k2043
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