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GM71C4256A-60 LG Corporation Bristol Electronics 46 - -
GM71C4256BJ-60 Chip One Exchange 1,118 - -
GM71C4256BJ-70 LG Corporation America II Electronics 3,000 - -
GM71C4256BJ60 LG Corporation Bristol Electronics 50 - -

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GM71C4256 datasheet (71)

Part Manufacturer Description Type PDF
GM71C4256 GoldStar 262144 word x 4 Bit CMOS DRAM Scan PDF
GM71C4256 LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
GM71C4256-10 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256-12 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256-85 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256A GoldStar 262144 word x 4 Bit CMOS DRAM Scan PDF
GM71C4256A-10 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan PDF
GM71C4256A-10 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256A-12 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256A-60 LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256A-70 LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256A-80 LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256A-80 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256AL LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan PDF
GM71C4256AL-10 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan PDF
GM71C4256AL-60 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan PDF
GM71C4256AL-70 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan PDF
GM71C4256AL-80 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan PDF
GM71C4256ALSJ GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan PDF

GM71C4256 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
GM71C4256

Abstract: GM71C4256-12 GM71C4256-85 GM71C4256-10
Text: Ordering Information Type NO. Access Time PKG GM71C4256-85 85 ns 300 MIL GM71C4256-10 100 ns 20 PIN GM71C4256-12 120 ns PLASTIC DIP GM71C4256SJ-85 85 ns 300 MIL GM71C4256SJ-10 100 ns 26 (20) PIN GM71C4256SJ-12 120 ns PLASTIC SOJ GM71C4256Z-85 85 ns 400 MIL GM71C4256Z-10 100 ns 20 PIN G M71C4256Z , ,6,7) SYMBOL PARAMETER GM71C4256-85 GM71C4256-10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX MIN , ( GM71C4256-85 ) 70mA MAX. Operating ( GM71C4256-12 ) 3mA MAX. Standby _ • Read-Modify-Write, RAS-only refresh


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PDF GM71C4256 GM71C4256 GM71C4256-12 GM71C4256-85 GM71C4256-10
GM71C4256-10

Abstract: No abstract text available
Text: 1/01 ~ I/04 Vcc Vss NC Ordering Information Type NO. GM71C4256-85 GM71C4256-10 GM71C4256-12 GM71C4256SJ-85 GM71C4256SJ-10 GM71C4256SJ-12 GM71C4256Z-85 GM71C4256Z-10 GM71C4256Z-12 Access Time 85 ns , tOFF AC Operating Conditions GM71C4256-85 GM71C4256-10 GM71C4256-12 PARAMETER Random , ~ 70°C) Unit : nS (Note 5, 6, 7) GM71C4256-85 GM71C4256-10 GM71C4256-12 SYMBOL twCH twCR twp tRWL , Fast Page Mode Cycle Time 190 220 65 75 · Low Power 95mA MAX. Operating ( GM71C4256-85 ) 70mA MAX


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PDF GM71C4256 GM71C4256 402A7S7 T-90-20 GM71C4256-10
GM71C4256B

Abstract: MQ5A
Text: ns 20 (26) Pin GM71C4256B J/BLJ-80 80 ns Plastic SOJ GM71C4256BZ /BLZ-60 60 ns 400 Mil GM71C4256BZ , @ LG Semicon. Co., LTD. Description Features The GM71C4256B /BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM71C4256B /BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C4256B /BL offers Fast Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71C4256B /BL to be packaged in a


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PDF GM71C4256B/BL 00DS304 MQ5A757 000530b GM71C4256B MQ5A
Not Available

Abstract: No abstract text available
Text: DIP GM71C4256SJ-85 GM71C4256SJ-10 GM71C4256SJ-12 85 ns 100 ns 120 ns 300 MIL 26 (20) PIN PLASTIC SOJ G M 71C4256Z-85 GM71C4256Z-10 GM71C4256Z-12 85 ns 100 ns 120 ns 400 MIL 20 PIN , (Vcc = 5V ±10%, Ta = 0 ~ 70°C) Unit : nS (Note 5, 6, 7) GM71C4256-85 GM71C4256-10 GM71C4256-12 , Operating Conditions GM71C4256-85 GM71C4256-10 GM 71C4256-12 SYMBOL PARAMETER MIN MAX , 35 40 160 190 220 55 65 75 • Low Power 95m A MAX. O perating ( GM71C4256-85


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PDF GM71C4256 GM71C4256
GoldStar

Abstract: GM71C4256-85 RAS 0510 connection diagram 104 csk 14 tv goldstar GM71C4256 GM71C4256-12 RAS 0510
Text: GM71C4256-85 GM71C4256-10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX MIN MAX 'WCH Write Command Hold , Power 330mW MAX. Operating ( GM71C4256-85 ) 274mW MAX. Operating ( GM71C4256-12 ) 16.5mW MAX. Standby â , AC Operating Conditions (VCC=5V+10%, TA=0~70°C) (Note 5,6,7) SYMBOL PARAMETER GM71C4256-85 GM71C4256-10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX MIN MAX fRC Random Read/Write Cycle Time 165 â , GOLD STAR CO., LTD. GM71C4256 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C4256 is


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PDF GM71C4256 GM71C4256 144X4 m0es757 T-90-20 GoldStar GM71C4256-85 RAS 0510 connection diagram 104 csk 14 tv goldstar GM71C4256-12 RAS 0510
RAS 0510 connection diagram

Abstract: RAS 0510 GoldStar GM71C4256 GM71C4256-12 GM71C4256-85 40267 GOLDSTAR TECHNOLOGY INC
Text: (Note 5,6,7) SYMBOL PARAMETER GM71C4256-85 GM71C4256-10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX , ( GM71C4256-85 ) 274mW MAX. Operating ( GM71C4256-12 ) 16.5mW MAX. Standby Output unlatched at cycle end allows , ) SYMBOL PARAMETER GM71C4256-85 GM7104256*10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX MIN MAX *RO , GOLD STAR CO., LTD. GM71C4256 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C4256 is the new generation dynamic RAM organized 262,144X4 Bit. The GM71C4256 utilizes GoldStar's silicon Gate


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PDF 402A7S7 OODS57t GM71C4256 GM71C4256 144X4 interf20 T-90-20 RAS 0510 connection diagram RAS 0510 GoldStar GM71C4256-12 GM71C4256-85 40267 GOLDSTAR TECHNOLOGY INC
GM7IC4256

Abstract: 71c4256
Text: -60 GM71C4256B /BL-70 GM71C4256B /BL-80 GM71C4256B J/BL J-60 GM71C4256BJ /BL J-70 GM71C4256B J/BL J-80 GM71C4256BZ , LG Semicon Co.,Ltd. GM71C4256B / GM71C4256BL 262,144 W ORDS x 4 BIT CMOS DYNAM IC RAM Description The GM71C4256B /BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM 71C4256B/BL has , Time & Cycle Time (Unit: ns) tRAC tcA C tRC tp c GM71C4256B /BL-60 GM71C4256B /BL-70 GM71C4256B /BL , GM71C4256B /BL Pin Description Pin A0-A8 RÂS CAS WE ÔË Function Address Inputs Row Address Strobe


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PDF GM71C4256B GM71C4256BL GM71C4256B/BL 71C4256B/BL GM71C4256B/BL GM7IC4256 71c4256
TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256 Siemens HYB511000 HYB51426 Texas Instr , MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai


Original
PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
CX20106A

Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
Text: MB81C78A GM71C1000 GM71C256 GM71C4256 GM71C4256A GM71C464 GM76C256 GM76C28 GM76C88 GM76C88L 4


Original
PDF GAS105 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE1012 MOC3012 CX20106A GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: No file text available


Original
PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Text: MEMORY LINE-UP l.D R A M 60ns I IM H - I IMxl |GM71C1000B-60 I GM71C 1OO0BJ-60 GM71C 1000BZ-60 GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 - I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 GM71C4256BZ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 70ns ZZH H h GM71C1000B-70 GM71C1000BJ-70 GM71CIO0OBZ-70 GM71C1000BU70 GM71C1000BU-70 GM71C1000BLZ-70 GM71C4256B-70 GM71C42Î6BJ-70 GM71C4Î56BZ-70 GM71C4256BL-70 GM71C4256BU-70 GM71C4256BLZ-70 = ] [ H H 80n> GM71C1000B-80 GM


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PDF GM71C1000B-60 GM71C 1OO0BJ-60 1000BZ-60 100OBL-6O 1000BLJ-60 GM71C1000BLZ-60 GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
GM71C4400BJ70

Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Text: GM71C4256B-60 GM71C4256B-70 - 1 G M 71C4256B-80 ÜM71C4256BJ-60 CiM71C4256B/.-60 GM71C4256B1.-60 G , h ]-[ G M 71C4256BJ-80 OM 71C4256BZ :-so - 1 GM71C4256BL-70 G M 71C42 56B IJ-70 GM


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PDF 71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80 71C1000BL-80 1000B I000H GM71C1000B-60 GM71C4400BJ70 GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
72ZZZZ

Abstract: GM71C4256A-80 GM71C4256A80
Text: . GM71C4256A-80 GM71C4256A-10 GM71C4256A-12 GM71C4256ASJ-80 GM71C4256ASJ-10 GM71C4256ASJ-12 GM71C4256AZ-80 G , )_ GM71C4256A-80 GM71C4256A-10 MIN MAX GM71C4256A-12 MIN MAX SYMBOL tRC tRWC tpc tPCM tRAC tcAC , 385mW MAX. Operating ( GM71C4256A-80 ) 330mW MAX. Operating ( GM71C4256A-10 ) 275mW MAX. operating ( GM71C4256A-12 ) 11 mW MAX. Standby_ 20 Lead Plastic ZIP · Read-Modify-Write, RAS-only refresh, CAS Before , 3 GST GM71C4256A (Vcc = 5 V ± 1 0 % , GM71C4256A-80 GM71C4256A-10 MIN 20 15 25 25 0 20 MAX


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PDF GM71C4256A GM71C4256A GM7lC4256Ato 0003t 72ZZZZ GM71C4256A-80 GM71C4256A80
GM7IC4256A

Abstract: 71c4256a GoldStar 4256a GM7IC4256A/AL-70 GM7IC GoldStar 71C4256 battery itec C4256 ICE 47E
Text: -46-23-17 GoldStar gm7ic4256a/al Read Cycle Symbol Parameter GM71C4256AML-60 GM71C4256A /AL-70 GM71C4256A /AL , Plastic DIP GM71C4256A /AL-10 100ns GM71C4256ASJ /ALSJ-60 60ns 300 Mil GM71C4256ASJ /ALSJ-70 70ns 20 (26) Pin GM71C4256ASJ /ALSJ-80 80ns Plastic SOJ GM71C4256ASJ /ALSJ-10 100ns GM71C4256AZ /ALZ-60 60ns 400 , GOLDSTAR TECHNOLOGY INC/ 47E D 4Q2Ô757 GGG3415 7 «GST GM71C4256A /AL 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C4256A /AL is the new generation dynamic RAM organized 262,144 x


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PDF GGG3415 GM71C4256A/AL GM71C4256A/AL GM71C-4256A/AL T-46-23-17 GM7IC4256A 71c4256a GoldStar 4256a GM7IC4256A/AL-70 GM7IC GoldStar 71C4256 battery itec C4256 ICE 47E
71C4256

Abstract: 71c4256a 71C4256A-80 GM71C4256A-12 GM71C4256A-80 GM71C4256A-10 GM71C4256ASJ-80 71C4256AZ-12 GM71C4256A GM71C4256ASJ-10
Text: GM71C4256A-12 120 ns PLASTIC DIP GM71C4256ASJ-80 80 ns 300 MIL GM71C4256ASJ-10 100 ns 20 PIN (26)- GM71C4256ASJ-12 120 ns PLASTIC SOJ GM71C4256AZ-80 80 ns 400 MIL G M 71C4256A2-10 100 ns 20 PIN G M , 0 ~ 70°C) Unit : nS (Note 5, 6, 7) SYMBOL GM71C4256A-80 GM71C4256A-10 GM71C4256A-12 UNIT NOTES , ) 303mW MAX. Operating ( GM71C4256A-10 ) 259mW MAX Operating ( GM71C4256A-12 ) 11 mW MAX. Standby_ â , PARAMETER G M 71C4256A-80 GM71C4256A-10 GM71C4256A-12 UNIT NOTES MIN MAX MIN MAX MIN MAX tflC


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PDF GM71C4256A GM71C4256A GM7lC4256Ato 71C4256 71c4256a 71C4256A-80 GM71C4256A-12 GM71C4256A-80 GM71C4256A-10 GM71C4256ASJ-80 71C4256AZ-12 GM71C4256ASJ-10
4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B /BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C(S)4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL G M 71C(S) 18160A/AL GM71V(S)16160A/AL GM 71V(S) 18160A/AL IM 256K 4M 4M 4M IM IM IM 512K 256K 256K 256K 16M 4M 4M IM IM IM IM Bit Dynamic RAM . 51 Bit Dynamic RAM . 69 Bit Dynamic RAM


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PDF GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL 71C41OOD/DL 71C4400B/BL 71C4400C/CL 71C4400D/DL GM71C 800A/AL 4170A mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
GM76C256all

Abstract: GM23C4000 GM23C410 GM23C8001 BFW12 LR-80 GM23C810QA-12 GM76C28A GM23C400 LT-860
Text: GM71C4256B /BJ/BZ-60 GM71C4256B /BJ/BZ-70 GM71C4256B /BJ/BZ-80 GM71C4256BU8 LJ/BLZ-60 GM71C42568L /8LJ/BLZ-70 GM71C42568UBLJ /BLZ-80 4MBit 4Wt1 GM71C4100B J/BZ/BT/BR-60 GM71C41008J/BZ/BT/BR-70 GM71C4100BJ/BZ/BT/BR


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PDF GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all GM23C4000 GM23C410 GM23C8001 BFW12 LR-80 GM23C810QA-12 GM76C28A GM23C400 LT-860
GM71C4256A-80

Abstract: No abstract text available
Text: NO. Access Time PKG GM71C4256A-80 GM71C4256A-10 GM71C4256A-12 80 ns 100 ns 120 ns , °C) (Note 5, 6, 7) GM71C4256A-80 PARAMETER SYMBOL tRC GM71C4256A-10 GM71C4256A-12 MIN M , : nS (Note 5, 6, 7) GM71C4256A-80 PARAM ETER SYMBOL GM71C4256A-10 GM71C4256A-12 MIN , 120 ns 300 MIL 20 PIN (26)PLASTIC SOJ G M 71C4256AZ-80 GM71C4256A2-10 GM71C4256AZ-12 80 ns , ( GM71C4256A-10 ) 259m W MAX O perating ( GM71C4256A-12 ) 11mW MAX. Standby_ 7^0 • Read-M odify-W rite


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PDF GM71C4256A GM71C4256A I/02C 777Z/////77777J GM71C4256A-80
GM7IC4256A/AL-80

Abstract: No abstract text available
Text: GM71C4256A /AL GoldStar 262,144 WORDSx 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4256A /AL is the new generation dy­ • 262,1 4 4 x 4 Bit Organization , 4256A/AL offers Fast Page Mode as a high speed GM71C4256A /AL-60 60 20 120 45 access mode. Multiplexed address inputs permit GM71C4256A /AL-70 50 70 20 130 the GM71C4256A /AL to be packaged in a stan­ GM71C4256A /AL-80 dard 20 pin DIP, SOJ and ZIP. The package size 55 80 25 160 provides high


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PDF GM71C4256A/AL GM71C4256A/AL GM71C- 256A/AL GM71CtRC GM71C4256A/AL-60 GM71C4256A/AL-70 GM71C4256A/AL-80 GM7IC4256A/AL-80
GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: (400) 20(26) SCU (300) 20ZIP(400) NOW 256Kx4 GM71C42568 /BJ/BZ-60 GM7 1C4256B/BJ/BZ-70 GM71C42568 /BJ/BZ-80 GM71C42568UBLJ /BLZ-60 GM71C42568L /BLJ/BLZ 70 GM71C4256BLÆLJ /BLZ-80 4M Bit 60 70 80 60 70 80


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PDF GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
GM7IC4256A/AL-70

Abstract: GM7IC4256A/AL-80
Text: /AL-80 GM71C4256A /AL-10 60ns 70ns 80ns 100ns 300 Mil 20 Pin Plastic DIP GM71C4256ASJ , GM71C4256A /AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4256A /AL is the new generation dy­ namic RAM organized 262,144 x 4 Bit. GM71C4256AJAL has realized higher density, higher per­ formance and various functions by utilizing ad­ vanced CMOS process technology. The GM71C4256A /AL offers Fast Page Mode as a high speed access mode


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PDF GM71C4256A/AL GM71C4256A/AL GM71C4256AJAL GM7IC4256A/AL-70 GM7IC4256A/AL-80
GMM79256NS-70/80/10

Abstract: No abstract text available
Text: GoldStar GMM79256NS-70/80/10 262,144 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO, LTD. Description Features The GMM79256NS is a 256K x9 bits Dynamic RAM Module, mounted 2 pieces of 1M bit DRAM ( GM71C4256ASJ , 256K x4) sealed in 20 pin SOJ package and a 256K bit DRAM , GM71C4256ASJ (SOJ) and a 256K DRAM GM71C256A(PLCC) • Fast Page Mode Capability • Single Power Supply â , GM71C4256ASJ - N A0-A8 RAS­ I] DQ2 ■tRAC GMM79256NS-70 Vcc Vss ~ 7 ^ r :Â


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PDF GMM79256NS-70/80/10 GMM79256NS GM71C4256ASJ, GM71C256A, GM71C4256ASJ GMM79256NS GMM79256NS-70/80/10
GMM78256S

Abstract: No abstract text available
Text: , mounted 2 pieces of 1M bit DRAM ( GM71C4256ASJ , 256K x4) sealed in 20 pin SOJ package. The GMM78256S is a , DRAM. • High Density Standard 30 Pin mounting 2 pcs of IM DRAM GM71C4256ASJ (SOJ) • Fast Page , Block Diagram GM71C4256ASJ Ao-a s ; A0 NC NC DQ5 WE s 38] 39] M] m CAS WE a , Í» . fO cn 0) > ¡5 GM71C4256ASJ - DQ4 A0-A8 1/01 RÄS I/02


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PDF GMM78256Sâ GMM78256S GM71C4256ASJ, GM71C4256ASJ
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