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Part Manufacturer Description Datasheet Download Buy Part
LT6300CGN Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LT6300IGN#TRPBF Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT6300CGN#PBF Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LT6300IGN#TR Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT6300CGN#TRPBF Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LT6300IGN#PBF Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C

GHZ micro-X Package Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - Hewlett-Packard MICRO-X

Abstract:
Text: -3 -2 (1 GHz ) -2 (1 GHz ) Supply Voltage (V) 5 5 5 6 6 Device Current (mA) 35 35 35 38 38 Package 8 , GHz ) Isolation @ 1 GHz (dB) 15 (1.9 GHz ) Switching Speed (ns) Output IP 3 (dBm) +55 Package SSOP , ) (dBm @ GHz ) Package (s) HPMX-2006 IAM-81008 IAM-81028 IAM-82008 IAM-82028 IAM-91563 Upconverter , -4V lines two 0 to -9V lines Min./Max Atten (dB typ. @ GHz ) 2/40 @ 26.5 2/40 @ 26.5 Comments Package , ( GHz ) 1.5 - 2.5 1.5 - 2.5 2-6 0.5 - 6 1.5 - 8 0.5 - 4 0.1 - 6 0.1 - 6 0.5 - 6 0.8 - 6 NF (dB @ GHz ) 2.2


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PDF HPMX-3003 MGA-64135 MGA-86563 MGA-86576 MGA-87563 MGA-81563 MGA-82563 MGA-83563 MGA-85563 Hewlett-Packard MICRO-X Hewlett-Packard MSA-0836 HMMC202 ina-02170 MGA-641 MSA-0770
Silicon Bipolar Transistor 35 MICRO-X

Abstract:
Text: FEATURES: · Up or down conversion with conversion gain · RF input from 0.1 to 2.0 GHz · Low phase noise self-oscillating LO with external tank · Down converted IF output from DC to 0.5 GHz 2 Port Active Mixer , converter for input frequencies (RF and LO) as high as 2.0 GHz and IF output frequencies as high as 2.0 GHz . Depending on input frequency either up conversion or down conversion if possible. At low VHF , " Plastic Micro-X package . ELECTRICAL SPECIFICATIONS: · TA = 25oC, ID = 16 mA, Z0 = 50 , RFIN =1.575GHz


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1999 - GHZ micro-X Package

Abstract:
Text: Frequency ( GHz ) VCE (V) NF o (dB) Ga (dB) P 1 dB (dBm) G1 dB (dBm) |S21E| 2 @ 1.0 GHz (dB) Package AT-30511 0.9 2.7 1.1 16.0 +7.0 16.5 17.9 [1] SOT , ) P 1 dB @ 4 GHz (dBm) G 1 dB @ 4 GHz (dBm) Package AT-64020 AT-64023 16.0 16.0 +28 , Frequency ( GHz ) VCE (V) P out (dBm) Power Gain (dB) Collector Efficiency (%) Package , at 900 MHz 2. Dual transistor - All data is per individual transistor. 3. Typical G1 dB at 2 GHz


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PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x ATF-13786 AT-32032 200 mil BeO package ATF-13336 at42010 Transistor Selection Guide
GHZ micro-X Package

Abstract:
Text: SHEET FEATURES: · High Gain Bandwidth Product f = 10 GHz typ @ I C =2mA t · DESCRIPTION AND , greater than 4mA, ft is nominally 10 GHz . Maximum recommended continuous current is 8 mA. A broad range , " Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz · High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL · VCBO , 21 | 2 Gain Bandwidth Product Insertion Power Gain: GHz 12 f = 1.0 GHz , 18.1 f =


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PDF BRF602 BRF602 BRF602an OT-23, OT-143, BRF60202 OT-23 BRF60214 BRF60292 OT-143 GHZ micro-X Package micro-x transistor GHZ micro-X ceramic Package BRF60292 BRF60286 BRF60285 BRF60284 BRF60235 BRF60214 BRF60202J
GHZ micro-X Package

Abstract:
Text: " Plastic Micro-X package . ELECTRICAL SPECIFICATIONS: · TA = 25oC, ID = 36 mA, Z0 = 50 , RFIN = 4.2 GHz , FEATURES: · Up or down conversion with conversion gain · RF input from 0.5 to 8.0 GHz · Low phase noise self-oscillating LO with external tank · Down converted IF output from DC to 2.0 GHz 2 Port Active Mixer , converter for input frequencies (RF and LO) as high as 8.0 GHz and IF output frequencies as high as 2.0 GHz . Depending on input frequency either up conversion or down conversion if possible. At low VHF


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ic 4027

Abstract:
Text: Micro-X package ; See package outline 35, 36) FREQ. S11 S21 S12 S22 S21 GHz dB 0.20000 , Micro-X package ; See package outline 35, 36) FREQ. S11 S21 S12 S22 S21 GHz Mag , SHEET FEATURES: · High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t · DESCRIPTION AND , greater than 25 mA, ft is nominally 10 GHz . Maximum recommended continuous current is 40 mA. A broad , " Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz · High


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PDF B12V105 B12V105 OT-23, OT143, unencaps143 ic 4027 3019 npn transistor transistor 30 j 124 7498 ic 03801 SOT-23J Silicon Bipolar Transistor 35 MICRO-X microwave transistor ic 4027 information
ba 5888

Abstract:
Text: greater than 3.0 GHz . The BA6 can operate in 5V systems. Application requires a minimal number of , at 500 MHz 15 dB typ at 1.0 GHz · Usable Gain to 3.0 GHz · Low Noise Figure 3.0 dB typ at , Series is fabricated using a low noise 10 GHz f t silicon bipolar process which utilizes ion implantation and gold metallization. Package options include 0.085" Plastic Micro-X, 0.145" Plastic MicroX , 0.1 GHz f = 0.5 GHz f = 1.0 GHz dB dB dB G Gain Flatness: dB ±0.8 f 3dB 3dB


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ba1s

Abstract:
Text: than 100 KHz to greater than 2.0 GHz . Application requires a minimal number of external components , gain. · 3dB bandwidth: DC to 1.2 GHz · Suitable for 7V systems · 16 dB typical gain at 1.0 GHz · High IP3 = +14 dBm typ · Unconditionally stable ( K > 1 ) PERFORMANCE DATA: · Performance Characteristics (TA = 25oC) SYMBOL The Bipolarics BA Series is fabricated using a low noise 10 GHz f silicon bipolar process which utilizes ion t implantation and gold metallization. Package options include 0.070


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PDF dBm01 ba1s GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X
m04 SMD

Abstract:
Text: Number (µm) (µm) ( GHz ) ( GHz ) (V) (mA) (dB) (dB) Power Bias Chip / VDS IDS P1dB Package (V , Chip / Part LengthWidth Range Frequency VDS IDS NFOPT GA VDS IDS P1dB Package Number (µm) (µm) ( GHz ) ( GHz ) (V) (mA) (dB) (dB) (V) (mA) (dBm) Code Chip / Package Description Available , 160 4 to 18 12 Chip / Package Description Available Screening Grades 00 Chip , Plastic D Note: All devices except chips are available on tape and reel. 20 GHz Band Devices


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PDF NE27200 NE321000 NE3210S01 NE4210S01 NE3503M04 NE3508M04 m04 SMD nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE3509M04 NE2720 GHZ micro-X Package ne3210s01
AT-60500

Abstract:
Text: 8.0 3.0 14.0 12.0 5.0 11.0 ( GHz ) chip ch|p chip Package Page 6-9 6-22 6-66 6-12 6-18 6-25 , |S¡ie I2 @1.0 GHz (dB) 12.5 12.0 Max. Usable Freq.N ( GHz ) 2.0 2.2 W* 8.0 S.O ( GHz ) Package , 4.0 GHz (dB) 9.5 6.5 5.5 6.5 ( GHz ) 40 25 25 18 Package chp chip chip chip Page 6-33 6-35 6-66 6-95 , -41411 AT-41486 AT-41511 AT-41586 AT-60111 AT-60211 AT-60586 Test Freq. ( GHz ) 2.0 2.0 2.0 2.0 2.0 2.0 2.0 , +20.5 +16.0 +18.5 +15.0 +17.0 +18.0 +18.0 +18.0 +4.0 +7.5 +15.0 I® 21eI2 @ 1.0 GHz (dB) 18.0 12.5 15.5


OCR Scan
PDF AT-41400 AT-60100 AT-60200 AT-60500 AT-41410 AT-41470 AT-60S10 AT-60S70 AT-41435 AT-41472 AT-01635 AT-21400 AT-60586 AT21400
1996 - GaAs Amplifier Micro-X Marking k

Abstract:
Text: Ptot RthJS max fT Package NF Gma/ms Pout (2 GHz , 5 V) dB (2 G H z , 5 V) dB , Package Pout ESA/SCC Detail Spec. Type Variant (12 GHz ) (12 GHz ) (12 GHz ) V V mA mW , Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and , MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of Transistor , to 5 GHz (CLY29, 32, 35, 38). Based on the mass production of the dies and the huge amount of


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PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k Silicon Bipolar Transistor MICRO-X LNA ku-band CLY27 CLY30 gaas fet micro-X Package SIEMENS MICROWAVE RADIO 8 GHz microwave fet IC gaas fet micro-X Package marking GaAs Amplifier Micro-X "Marking k"
GHZ micro-X Package

Abstract:
Text: SHEET FEATURES: · High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t · DESCRIPTION AND , greater than 20mA, ft is nominally 10 GHz . Maximum recommended continuous current is 20 mA. A broad range , " Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz · High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz · Absolute Maximum Ratings: SYMBOL VCBO , Gain Bandwidth Product GHz f = 1.0 GHz 18.1 f = 2.0 GHz |S 21 | 2 Insertion Power Gain


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PDF BRF610 BRF610is BRF610an OT-23, OT-143, BRF61002 OT-23 BRF61014 BRF61092 OT-143 GHZ micro-X Package MICROWAVE TRANSISTOR Micro-X ceramic npn Silicon Bipolar Transistor 35 MICRO-X MICRO-X micro-x transistor BRF61014 BRF61085 BRF61002J GHZ micro-X ceramic Package
1998 - MP4T6365

Abstract:
Text: ·Designed for Battery Operation ·fT to 10 GHz ·Low Voltage Oscillator and Amplifier ·Low Phase Noise and , at frequencies to 4 GHz . They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz . Case Styles SOT-23 SOT-143 The MP4T6365 family was , Chip (MP4T636500) 400 mW 175° C SOT-23 (MP4T636533) 200 mW 125° C Micro-X Package (MP4T636535) 300 mW 150° C SOT-143 (MP4T636539) 225 mW 125° C Power Dissipation Package


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PDF MP4T6365 MP4T6365 OT-143 MP4T636539 Bipolar Transistor 26-13 transistor sot-23 S21E MP4T636539 MP4T636535 MP4T636533 MP4T636500 MA4T636533 557 sot143
1996 - GaAs Amplifier Micro-X Marking k

Abstract:
Text: max fT Package NF Gma/ms Pout (2 GHz , 5 V) dB (2 G H z , 5 V) dB (2 GHz , 5 , Package Pout ESA/SCC Detail Spec. Type Variant (12 GHz ) (12 GHz ) (12 GHz ) V V mA mW , Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and , Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of , to 5 GHz (CLY29, 32, 35, 38). Based on the mass production of the dies and the huge amount of


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PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k gaas fet micro-X Package marking GaAs Amplifier Micro-X CFY66 BFY40 BFY193 BFY193 Microx transistor "micro-x" "marking" 3 gaas fet micro-X Package Microwave Semiconductors
MMIC Amplifier Micro-X marking 420

Abstract:
Text: Characteristics RthJS max fT Package NF Gma/ms Pout (2 GHz , 5 V) dB (2 GHz , 5 V) dB (2 , Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and , Package Outlines 17 5.1 Package Outlines of Diode Packages FP, HPAC140, P1, T, T1, T2 17 5.2 Package Outlines of Transistor Packages Micro-X, Micro-X1, MWP-25, MWP-35 21 Data Book , are ESA/SCC space qualified in their different package variants. The microwave bipolar junction


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PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors "Microwave Diodes" micro-x 420 MMIC Amplifier Micro-X marking D BFY193 GaAs Amplifier Micro-X BFY 34 transistor
rf microwave amplifier with S Parameters

Abstract:
Text: AMPLIFIER PRODUCT SPECIFICATION FEATURES: · Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages · Suitable for 7V systems · 12 dB typical gain at 1.0 GHz · High IP = +17 dBm typ 3 · Cascadable 50 gain PERFORMANCE DATA: · , than 100 KHz to greater than 2.0 GHz . Application requires a minimal number of external components , BA2 can be cascaded for higher gain. The Bipolarics BA Series is fabricated using a low noise 10 GHz


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1998 - MP4T645

Abstract:
Text: to 9 GHz ·Low Noise Figure ·High Associated Gain ·Hermetic and Surface Mount Packages Av ailable , amplifiers to approximately 4 GHz , and in oscillators to approximately 10 GHz . These industry standard , package (MP4T64535), in the plastic SOT-23 package (MP4T64533), in chip form (MP4T64500), and in the SOT-143 package (MP4T64539). The MP4T645 series is av ailable in other plastic and hermetic packages , used for low noise, high associated gain. large dynamic range amplifiers up to approximately 4 GHz


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PDF MP4T645 MP4T645 MP4T64535) MP4T64539 OT-143 Bipolar Transistor NPN/transistor C 331 4558 same match other ic MP4T64533 MP4T64500 MP4T64535 MP4T64539 865 Micro-X S21E
Not Available

Abstract:
Text: €¢ Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase , amplifiers at frequencies to 4 GHz . They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz . Case Styles SOT-23 SOT-143 The MP4T6365 family was , Package (MP4T636535) 300 mW 150°C SOT-143 (MP4T636539) 225 mW 125°C Power Dissipation Package Type Electrical Specifications @ 25°C MP4T6365 Series MP4T636500 Parameter of Test


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PDF MP4T6365 MP4T6365 OT-143 MP4T636539
2008 - Not Available

Abstract:
Text: GHz 14 dBm Package SOT-89 SOT-89 SOT-89 SOT-89 SC-88 SC-88 SC-88 SC-88 Micro-X Micro-X Micro-X Micro-X , MHz (dB) 14 NF @ 1 GHz 1.8 Input IP3 @ 900 MHz (dBm) 18.5 P1 dB @ 2 GHz (dBm) 7 Package , Current (mA) ­ 76 ­ ­ ­ ­ ­ 116 ­ ­ Noise Figure (dB) 3.3 3.0 3.0 3.0 3.0 ­ ­ 4.5 ­ ­ Package (mm) 4 x 4 , Package (mm) 4-pin SOT-89 4.5 x 2.4 Linear Power Amplifier Modules (50 Input/Output) Part Number , Test Frequency (MHz) 900 1900 900 1900 Package (mm) 8-pin LCC 8x8 8-pin LCC 8x8 8-pin LCC 8x8 8-pin LCC


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PDF SKY65008 SKY65009 SKY65028-70LF
MMIC Amplifier Micro-X

Abstract:
Text: AMPLIFIER PRODUCT SPECIFICATION FEATURES: · Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages · Suitable for 7V systems · 12 dB typical gain at 1.0 GHz · High IP = +19 dBm typ 3 · High P1dB = + 10 dBm typ PERFORMANCE DATA: · , than 100 KHz to greater than 2.0 GHz . Application requires a minimal number of external components , BA3 can be cascaded for higher gain. The Bipolarics BA Series is fabricated using a low noise 10 GHz


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BA11

Abstract:
Text: AMPLIFIER PRODUCT SPECIFICATION FEATURES: · Very High Gain 32 dB typ at 100 MHz 22 dB typ at 1.0 GHz · Usable Gain to 5.0 GHz · Low Noise Figure 3.3 dB typ at 1.0 GHz PERFORMANCE DATA: · , from less than 100 KHz to greater than 5.0 GHz . Gain at 4 GHz is typically 10 dB. Application , Bipolarics BA Series is fabricated using a low noise 10 GHz ft silicon bipolar process which utilizes ion implantation and gold metallization. Package options include SOT-143J, 0.070" Stripline, 0.085" Plastic


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BA4 amplifier

Abstract:
Text: AMPLIFIER PRODUCT SPECIFICATION FEATURES: · Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages · Suitable for 7V systems · 8.0 dB typical gain at 1.0 GHz · High IP = +25 dBm typ 3 · High P = + 12.5 dBm typ 1dB PERFORMANCE DATA , frequency range from less than 100 KHz to greater than 2.0 GHz . Application requires a minimal number of , noise 10 GHz ft silicon bipolar process which utilizes ion implantation and gold metallization


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Silicon Bipolar Transistor 35 MICRO-X

Abstract:
Text: FEATURES: DESCRIPTION AND APPLICATIONS: · High Output Power 27.0 dBm, P1dB @ 1.0 GHz · High Gain Bandwidth Product f = 6.0 GHz @ IC = 100 mA t Bipolarics' B30V140 is a high performance, low cost silicon bipolar transistor intended for linear power applications at frequencies of 0.5 to 2.6 GHz , dB @ 1.0 GHz · SYMBOL Ceramic, BeO & Stripline packages available RATING UNITS , dB compression: f = 1.0 GHz dBm 27.0 Gain at 1dB compression: f = 1.0 GHz dB 9.0


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PDF B30V140 B30V140 B30V180 B30V1160 Silicon Bipolar Transistor 35 MICRO-X Silicon Bipolar Transistor MICRO-X
62 01071

Abstract:
Text: ceramic Micro-X package ; See package outline 35) FREQ. GHz 0.20000 0.40000 0.60000 0.80000 , SHEET FEATURES: · High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t · DESCRIPTION AND , greater than 20mA, ft is nominally 10 GHz . Maximum recommended continuous current is 20 mA. A broad range , " Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz · High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz · Absolute Maximum Ratings: SYMBOL UNITS


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PDF BRF510 BRF510is BRF510an OT-23, OT-143, unencapsulate74 62 01071 3019 Transistor BRF510 Bipolarics* BRF510 03-198 transistor 1047 IC 4027 TRANSISTOR 4841 ic 7413 datasheet c 3198 transistor
1998 - MP4T243

Abstract:
Text: .00 Features ·Low Phase Noise Oscillator Transistor ·200 mW Driv er Amplifier Transistor ·Operation to 8 GHz , of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB. Case Styles , C = 40 mA fT GHz 7 typ 7 typ Insertion Power Gain VCE = 12 volts I C = 40 mA f = 1 GHz f = 2 GHz |S21E|2 dB 12 min 8 typ 11 min 8 typ VCE = 12 volts I C = 20 mA f


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PDF MP4T243 MP4T24300 MP4T24335 Bipolar Transistor ma4t24335 Transistor 35 MICRO-X ic chip ic 4410 low noise transistors microwave MP4T24335 S21E S22E
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