The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TMPM3HMFZAFG TMPM3HMFZAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003
TMPM3HPFYAFG TMPM3HPFYAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1414-0.40-001
TMPM3HNFDAFG TMPM3HNFDAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002
TMPM3HPFZAFG TMPM3HPFZAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1414-0.40-001
TMP89FS60BFG TMP89FS60BFG ECAD Model Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG TMP89FS63BUG ECAD Model Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002

GHZ micro-X Package Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - HMMC202

Abstract: MSA-0770 Hewlett-Packard MSA-0836 MGA-641 ina-02170 Hewlett-Packard MICRO-X
Text: -3 -2 (1 GHz ) -2 (1 GHz ) Supply Voltage (V) 5 5 5 6 6 Device Current (mA) 35 35 35 38 38 Package 8 , GHz ) Isolation @ 1 GHz (dB) 15 (1.9 GHz ) Switching Speed (ns) Output IP 3 (dBm) +55 Package SSOP , ) (dBm @ GHz ) Package (s) HPMX-2006 IAM-81008 IAM-81028 IAM-82008 IAM-82028 IAM-91563 Upconverter , -4V lines two 0 to -9V lines Min./Max Atten (dB typ. @ GHz ) 2/40 @ 26.5 2/40 @ 26.5 Comments Package , ( GHz ) 1.5 - 2.5 1.5 - 2.5 2-6 0.5 - 6 1.5 - 8 0.5 - 4 0.1 - 6 0.1 - 6 0.5 - 6 0.8 - 6 NF (dB @ GHz ) 2.2


Original
PDF HPMX-3003 MGA-64135 MGA-86563 MGA-86576 MGA-87563 MGA-81563 MGA-82563 MGA-83563 MGA-85563 HMMC202 MSA-0770 Hewlett-Packard MSA-0836 MGA-641 ina-02170 Hewlett-Packard MICRO-X
Silicon Bipolar Transistor 35 MICRO-X

Abstract: Silicon Bipolar Transistor MICRO-X GHZ micro-X Package micro-x transistor 4 35 micro-x micro-X Self-Oscillating mixer 35 micro-X ceramic Package micro-x silicon bipolar mmic GHZ micro-X ceramic Package
Text: FEATURES: · Up or down conversion with conversion gain · RF input from 0.1 to 2.0 GHz · Low phase noise self-oscillating LO with external tank · Down converted IF output from DC to 0.5 GHz 2 Port Active Mixer , converter for input frequencies (RF and LO) as high as 2.0 GHz and IF output frequencies as high as 2.0 GHz . Depending on input frequency either up conversion or down conversion if possible. At low VHF , " Plastic Micro-X package . ELECTRICAL SPECIFICATIONS: · TA = 25oC, ID = 16 mA, Z0 = 50 , RFIN =1.575GHz


Original
PDF
1999 - GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Text: Frequency ( GHz ) VCE (V) NF o (dB) Ga (dB) P 1 dB (dBm) G1 dB (dBm) |S21E| 2 @ 1.0 GHz (dB) Package AT-30511 0.9 2.7 1.1 16.0 +7.0 16.5 17.9 [1] SOT , ) P 1 dB @ 4 GHz (dBm) G 1 dB @ 4 GHz (dBm) Package AT-64020 AT-64023 16.0 16.0 +28 , Frequency ( GHz ) VCE (V) P out (dBm) Power Gain (dB) Collector Efficiency (%) Package , at 900 MHz 2. Dual transistor - All data is per individual transistor. 3. Typical G1 dB at 2 GHz


Original
PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
GHZ micro-X Package

Abstract: micro-x transistor BRF60202 BRF60202J BRF60214 BRF60235 BRF60284 BRF60285 BRF60286 BRF60292
Text: SHEET FEATURES: · High Gain Bandwidth Product f = 10 GHz typ @ I C =2mA t · DESCRIPTION AND , greater than 4mA, ft is nominally 10 GHz . Maximum recommended continuous current is 8 mA. A broad range , " Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz · High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL · VCBO , 21 | 2 Gain Bandwidth Product Insertion Power Gain: GHz 12 f = 1.0 GHz , 18.1 f =


Original
PDF BRF602 BRF602 BRF602an OT-23, OT-143, BRF60202 OT-23 BRF60214 BRF60292 OT-143 GHZ micro-X Package micro-x transistor BRF60202 BRF60202J BRF60214 BRF60235 BRF60284 BRF60285 BRF60286 BRF60292
GHZ micro-X Package

Abstract: low noise block down converter GHZ micro-X ceramic Package Ceramic Resonator GHz Silicon Bipolar Transistor MICRO-X Silicon Bipolar Transistor 35 MICRO-X frequency converter silicon Micro-X Ceramic MMIC SOT 3 8511
Text: " Plastic Micro-X package . ELECTRICAL SPECIFICATIONS: · TA = 25oC, ID = 36 mA, Z0 = 50 , RFIN = 4.2 GHz , FEATURES: · Up or down conversion with conversion gain · RF input from 0.5 to 8.0 GHz · Low phase noise self-oscillating LO with external tank · Down converted IF output from DC to 2.0 GHz 2 Port Active Mixer , converter for input frequencies (RF and LO) as high as 8.0 GHz and IF output frequencies as high as 2.0 GHz . Depending on input frequency either up conversion or down conversion if possible. At low VHF


Original
PDF
ic 4027

Abstract: 3019 npn transistor transistor 30 j 124 7498 ic B12V105 transistor s parameters noise Silicon Bipolar Transistor 35 MICRO-X ic 4027 information microwave transistor SOT-23J
Text: Micro-X package ; See package outline 35, 36) FREQ. S11 S21 S12 S22 S21 GHz dB 0.20000 , Micro-X package ; See package outline 35, 36) FREQ. S11 S21 S12 S22 S21 GHz Mag , SHEET FEATURES: · High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t · DESCRIPTION AND , greater than 25 mA, ft is nominally 10 GHz . Maximum recommended continuous current is 40 mA. A broad , " Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz · High


Original
PDF B12V105 B12V105 OT-23, OT143, unencaps143 ic 4027 3019 npn transistor transistor 30 j 124 7498 ic transistor s parameters noise Silicon Bipolar Transistor 35 MICRO-X ic 4027 information microwave transistor SOT-23J
micro-x mhz ghz microwave

Abstract: ba 5888 MMIC Amplifier Micro-X GHZ micro-X Package
Text: greater than 3.0 GHz . The BA6 can operate in 5V systems. Application requires a minimal number of , at 500 MHz 15 dB typ at 1.0 GHz · Usable Gain to 3.0 GHz · Low Noise Figure 3.0 dB typ at , Series is fabricated using a low noise 10 GHz f t silicon bipolar process which utilizes ion implantation and gold metallization. Package options include 0.085" Plastic Micro-X, 0.145" Plastic MicroX , 0.1 GHz f = 0.5 GHz f = 1.0 GHz dB dB dB G Gain Flatness: dB ±0.8 f 3dB 3dB


Original
PDF
ba1s

Abstract: GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X
Text: than 100 KHz to greater than 2.0 GHz . Application requires a minimal number of external components , gain. · 3dB bandwidth: DC to 1.2 GHz · Suitable for 7V systems · 16 dB typical gain at 1.0 GHz · High IP3 = +14 dBm typ · Unconditionally stable ( K > 1 ) PERFORMANCE DATA: · Performance Characteristics (TA = 25oC) SYMBOL The Bipolarics BA Series is fabricated using a low noise 10 GHz f silicon bipolar process which utilizes ion t implantation and gold metallization. Package options include 0.070


Original
PDF dBm01 ba1s GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X
m04 SMD

Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
Text: Number (µm) (µm) ( GHz ) ( GHz ) (V) (mA) (dB) (dB) Power Bias Chip / VDS IDS P1dB Package (V , Chip / Part LengthWidth Range Frequency VDS IDS NFOPT GA VDS IDS P1dB Package Number (µm) (µm) ( GHz ) ( GHz ) (V) (mA) (dB) (dB) (V) (mA) (dBm) Code Chip / Package Description Available , 160 4 to 18 12 Chip / Package Description Available Screening Grades 00 Chip , Plastic D Note: All devices except chips are available on tape and reel. 20 GHz Band Devices


Original
PDF NE27200 NE321000 NE3210S01 NE4210S01 NE3503M04 NE3508M04 m04 SMD nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Text: 8.0 3.0 14.0 12.0 5.0 11.0 ( GHz ) chip ch|p chip Package Page 6-9 6-22 6-66 6-12 6-18 6-25 , |S¡ie I2 @1.0 GHz (dB) 12.5 12.0 Max. Usable Freq.N ( GHz ) 2.0 2.2 W* 8.0 S.O ( GHz ) Package , 4.0 GHz (dB) 9.5 6.5 5.5 6.5 ( GHz ) 40 25 25 18 Package chp chip chip chip Page 6-33 6-35 6-66 6-95 , -41411 AT-41486 AT-41511 AT-41586 AT-60111 AT-60211 AT-60586 Test Freq. ( GHz ) 2.0 2.0 2.0 2.0 2.0 2.0 2.0 , +20.5 +16.0 +18.5 +15.0 +17.0 +18.0 +18.0 +18.0 +4.0 +7.5 +15.0 I® 21eI2 @ 1.0 GHz (dB) 18.0 12.5 15.5


OCR Scan
PDF AT-41400 AT-60100 AT-60200 AT-60500 AT-41410 AT-41470 AT-60S10 AT-60S70 AT-41435 AT-41472 AT-01635 AT-21400 AT21400 AT-60586
1996 - GaAs Amplifier Micro-X Marking k

Abstract: LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
Text: Ptot RthJS max fT Package NF Gma/ms Pout (2 GHz , 5 V) dB (2 G H z , 5 V) dB , Package Pout ESA/SCC Detail Spec. Type Variant (12 GHz ) (12 GHz ) (12 GHz ) V V mA mW , Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and , MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of Transistor , to 5 GHz (CLY29, 32, 35, 38). Based on the mass production of the dies and the huge amount of


Original
PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
GHZ micro-X Package

Abstract: MICROWAVE TRANSISTOR Micro-X ceramic npn micro-x transistor MICRO-X Silicon Bipolar Transistor 35 MICRO-X BRF610 BRF61002 PACKAGE STYLE 51 BRF61004
Text: SHEET FEATURES: · High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t · DESCRIPTION AND , greater than 20mA, ft is nominally 10 GHz . Maximum recommended continuous current is 20 mA. A broad range , " Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz · High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz · Absolute Maximum Ratings: SYMBOL VCBO , Gain Bandwidth Product GHz f = 1.0 GHz 18.1 f = 2.0 GHz |S 21 | 2 Insertion Power Gain


Original
PDF BRF610 BRF610is BRF610an OT-23, OT-143, BRF61002 OT-23 BRF61014 BRF61092 OT-143 GHZ micro-X Package MICROWAVE TRANSISTOR Micro-X ceramic npn micro-x transistor MICRO-X Silicon Bipolar Transistor 35 MICRO-X BRF610 BRF61002 PACKAGE STYLE 51 BRF61004
1998 - MP4T6365

Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
Text: ·Designed for Battery Operation ·fT to 10 GHz ·Low Voltage Oscillator and Amplifier ·Low Phase Noise and , at frequencies to 4 GHz . They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz . Case Styles SOT-23 SOT-143 The MP4T6365 family was , Chip (MP4T636500) 400 mW 175° C SOT-23 (MP4T636533) 200 mW 125° C Micro-X Package (MP4T636535) 300 mW 150° C SOT-143 (MP4T636539) 225 mW 125° C Power Dissipation Package


Original
PDF MP4T6365 MP4T6365 OT-143 MP4T636539 Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
1996 - GaAs Amplifier Micro-X Marking k

Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
Text: max fT Package NF Gma/ms Pout (2 GHz , 5 V) dB (2 G H z , 5 V) dB (2 GHz , 5 , Package Pout ESA/SCC Detail Spec. Type Variant (12 GHz ) (12 GHz ) (12 GHz ) V V mA mW , Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and , Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of , to 5 GHz (CLY29, 32, 35, 38). Based on the mass production of the dies and the huge amount of


Original
PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Text: Characteristics RthJS max fT Package NF Gma/ms Pout (2 GHz , 5 V) dB (2 GHz , 5 V) dB (2 , Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and , Package Outlines 17 5.1 Package Outlines of Diode Packages FP, HPAC140, P1, T, T1, T2 17 5.2 Package Outlines of Transistor Packages Micro-X, Micro-X1, MWP-25, MWP-35 21 Data Book , are ESA/SCC space qualified in their different package variants. The microwave bipolar junction


Original
PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
rf microwave amplifier with S Parameters

Abstract: BA2 capacitor BA11 02238
Text: AMPLIFIER PRODUCT SPECIFICATION FEATURES: · Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages · Suitable for 7V systems · 12 dB typical gain at 1.0 GHz · High IP = +17 dBm typ 3 · Cascadable 50 gain PERFORMANCE DATA: · , than 100 KHz to greater than 2.0 GHz . Application requires a minimal number of external components , BA2 can be cascaded for higher gain. The Bipolarics BA Series is fabricated using a low noise 10 GHz


Original
PDF
1998 - MP4T645

Abstract: Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E
Text: to 9 GHz ·Low Noise Figure ·High Associated Gain ·Hermetic and Surface Mount Packages Av ailable , amplifiers to approximately 4 GHz , and in oscillators to approximately 10 GHz . These industry standard , package (MP4T64535), in the plastic SOT-23 package (MP4T64533), in chip form (MP4T64500), and in the SOT-143 package (MP4T64539). The MP4T645 series is av ailable in other plastic and hermetic packages , used for low noise, high associated gain. large dynamic range amplifiers up to approximately 4 GHz


Original
PDF MP4T645 MP4T645 MP4T64535) MP4T64539 OT-143 Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E
Not Available

Abstract: No abstract text available
Text: €¢ Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase , amplifiers at frequencies to 4 GHz . They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz . Case Styles SOT-23 SOT-143 The MP4T6365 family was , Package (MP4T636535) 300 mW 150°C SOT-143 (MP4T636539) 225 mW 125°C Power Dissipation Package Type Electrical Specifications @ 25°C MP4T6365 Series MP4T636500 Parameter of Test


Original
PDF MP4T6365 MP4T6365 OT-143 MP4T636539
2008 - Not Available

Abstract: No abstract text available
Text: GHz 14 dBm Package SOT-89 SOT-89 SOT-89 SOT-89 SC-88 SC-88 SC-88 SC-88 Micro-X Micro-X Micro-X Micro-X , MHz (dB) 14 NF @ 1 GHz 1.8 Input IP3 @ 900 MHz (dBm) 18.5 P1 dB @ 2 GHz (dBm) 7 Package , Current (mA) ­ 76 ­ ­ ­ ­ ­ 116 ­ ­ Noise Figure (dB) 3.3 3.0 3.0 3.0 3.0 ­ ­ 4.5 ­ ­ Package (mm) 4 x 4 , Package (mm) 4-pin SOT-89 4.5 x 2.4 Linear Power Amplifier Modules (50 Input/Output) Part Number , Test Frequency (MHz) 900 1900 900 1900 Package (mm) 8-pin LCC 8x8 8-pin LCC 8x8 8-pin LCC 8x8 8-pin LCC


Original
PDF SKY65008 SKY65009 SKY65028-70LF
MMIC Amplifier Micro-X

Abstract: GHZ micro-X Package BA11 rf microwave amplifier with S Parameters 03-198
Text: AMPLIFIER PRODUCT SPECIFICATION FEATURES: · Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages · Suitable for 7V systems · 12 dB typical gain at 1.0 GHz · High IP = +19 dBm typ 3 · High P1dB = + 10 dBm typ PERFORMANCE DATA: · , than 100 KHz to greater than 2.0 GHz . Application requires a minimal number of external components , BA3 can be cascaded for higher gain. The Bipolarics BA Series is fabricated using a low noise 10 GHz


Original
PDF
BA11

Abstract: MMIC Amplifier Micro-X GHZ micro-X ceramic Package
Text: AMPLIFIER PRODUCT SPECIFICATION FEATURES: · Very High Gain 32 dB typ at 100 MHz 22 dB typ at 1.0 GHz · Usable Gain to 5.0 GHz · Low Noise Figure 3.3 dB typ at 1.0 GHz PERFORMANCE DATA: · , from less than 100 KHz to greater than 5.0 GHz . Gain at 4 GHz is typically 10 dB. Application , Bipolarics BA Series is fabricated using a low noise 10 GHz ft silicon bipolar process which utilizes ion implantation and gold metallization. Package options include SOT-143J, 0.070" Stripline, 0.085" Plastic


Original
PDF
BA4 amplifier

Abstract: ba4 RF amplifier
Text: AMPLIFIER PRODUCT SPECIFICATION FEATURES: · Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages · Suitable for 7V systems · 8.0 dB typical gain at 1.0 GHz · High IP = +25 dBm typ 3 · High P = + 12.5 dBm typ 1dB PERFORMANCE DATA , frequency range from less than 100 KHz to greater than 2.0 GHz . Application requires a minimal number of , noise 10 GHz ft silicon bipolar process which utilizes ion implantation and gold metallization


Original
PDF
Silicon Bipolar Transistor 35 MICRO-X

Abstract: B30V1160 B30V140 Silicon Bipolar Transistor MICRO-X
Text: FEATURES: DESCRIPTION AND APPLICATIONS: · High Output Power 27.0 dBm, P1dB @ 1.0 GHz · High Gain Bandwidth Product f = 6.0 GHz @ IC = 100 mA t Bipolarics' B30V140 is a high performance, low cost silicon bipolar transistor intended for linear power applications at frequencies of 0.5 to 2.6 GHz , dB @ 1.0 GHz · SYMBOL Ceramic, BeO & Stripline packages available RATING UNITS , dB compression: f = 1.0 GHz dBm 27.0 Gain at 1dB compression: f = 1.0 GHz dB 9.0


Original
PDF B30V140 B30V140 B30V180 B30V1160 Silicon Bipolar Transistor 35 MICRO-X Silicon Bipolar Transistor MICRO-X
62 01071

Abstract: 3019 Transistor BRF510 c 3198 transistor ic 7413 datasheet TRANSISTOR 4841 IC 4027 transistor 1047 03-198 Bipolarics* BRF510
Text: ceramic Micro-X package ; See package outline 35) FREQ. GHz 0.20000 0.40000 0.60000 0.80000 , SHEET FEATURES: · High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t · DESCRIPTION AND , greater than 20mA, ft is nominally 10 GHz . Maximum recommended continuous current is 20 mA. A broad range , " Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz · High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz · Absolute Maximum Ratings: SYMBOL UNITS


Original
PDF BRF510 BRF510is BRF510an OT-23, OT-143, unencapsulate74 62 01071 3019 Transistor BRF510 c 3198 transistor ic 7413 datasheet TRANSISTOR 4841 IC 4027 transistor 1047 03-198 Bipolarics* BRF510
1998 - MP4T243

Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Text: .00 Features ·Low Phase Noise Oscillator Transistor ·200 mW Driv er Amplifier Transistor ·Operation to 8 GHz , of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB. Case Styles , C = 40 mA fT GHz 7 typ 7 typ Insertion Power Gain VCE = 12 volts I C = 40 mA f = 1 GHz f = 2 GHz |S21E|2 dB 12 min 8 typ 11 min 8 typ VCE = 12 volts I C = 20 mA f


Original
PDF MP4T243 MP4T24300 MP4T24335 Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Supplyframe Tracking Pixel