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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTM4628IY#PBF Linear Technology LTM4628 - Dual 8A or Single 16A DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 144; Temperature Range: -40°C to 85°C
LTM4628EY#PBF Linear Technology LTM4628 - Dual 8A or Single 16A DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 144; Temperature Range: -40°C to 85°C
LTM4628EV#PBF Linear Technology LTM4628 - Dual 8A or Single 16A DC/DC µModule (Power Module) Regulator; Package: LGA; Pins: 144; Temperature Range: -40°C to 85°C
LTM4628IV#PBF Linear Technology LTM4628 - Dual 8A or Single 16A DC/DC µModule (Power Module) Regulator; Package: LGA; Pins: 144; Temperature Range: -40°C to 85°C
AXA016A0X3-SRZ GE Critical Power 12V Austin SuperLynxTM 16A: Non-Isolated DC-DC Power Module, 10Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 16A Output Current
AXA016A0X3-SR GE Critical Power 12V Austin SuperLynxTM 16A: Non-Isolated DC-DC Power Module, 10Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 16A Output Current

GFM 16A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
0221B00259

Abstract: GFM-252 LR80793 0221B00187 0221B00541 GFM 250 gfm 353 gfm-353 0221B01976 GFM 375D
Text: GROUND FAULT CURRENT DETECTION SYSTEMS Model GFM (Relay) 1.5 to 65 Amp Trip Currents 110396 , . • Only for use with GFM sensors. These Class 1 Model GFM Ground Fault protection systems are designed to minimize damage or loss to equipment caused by destructive arcing ground faults. This GFM , . MODELS GFM -252 AND Push Button (P.B.) Style: door 262 mount. MODELS GFM -353, 363, 453, AND 463 , 14 oz. 16 oz. HOW TO ORDER RELAYS -1 GFM X X TIME DELAY 5— Instantaneous 6— Adjustable time


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PDF LR80793 0221B00259 GFM-252 LR80793 0221B00187 0221B00541 GFM 250 gfm 353 gfm-353 0221B01976 GFM 375D
1992 - GCR200

Abstract: Gfm2K ISO 7816 I2C GFM 19 A GFM2 ISO7816-3
Text: section for a description of the three levels of GFM commands, which are: · card micro sequences , Acknowledge . . The GFM Cards and I2C . . . . . . . . . . . . . . . . . . . . . . , always the card reader. Page. Area of a GFM card memory made up of eight consecutive bytes. Slave , using the I C protocol, which influences the way in which the GFM commands are executed. The GFM2K , overview of the I C protocol, then describes the GFM commands. There are three levels of commands which


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ES 40 GF switch

Abstract: pedal switch switch SNAP ACTION Pedal GFM, iec EN 60947-5-1 6AGL
Text: action 1 NC/1 NO contact GFM 1Ö/1S GF 1Ö/1S 2 NC/2 NO contacts GFM 2Ö/2S GF 2Ö/2S , action: 4 A gL/gG D-fuse ­ 25 °C . + 80 ºC > 1 million operations H GFM K 1Ö/1S 1NC/1NO


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PDF AC-15 ES 40 GF switch pedal switch switch SNAP ACTION Pedal GFM, iec EN 60947-5-1 6AGL
2000 - Square D KAL Breaker

Abstract: FAL36060 square d Type KA circuit breaker breaker interlock Square D KA Breaker MHL-600 FAL36 MAL-1000 la 4620 FAL-600
Text: , FIL or KIL With Ground Fault Module ( GFM ) Ground Fault Modules are available factory installed. See table below for pricing and availability. k Ground Fault Modules ( GFM ) can be field installed , . See page 6-16. Price includes 3-pole circuit breaker, GFM , neutral assembly and neutral CT factory


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PDF Typ-100 KAL36225G) Square D KAL Breaker FAL36060 square d Type KA circuit breaker breaker interlock Square D KA Breaker MHL-600 FAL36 MAL-1000 la 4620 FAL-600
Not Available

Abstract: No abstract text available
Text: STATUS ( GF+M ) BLK ( GF+M ) GRA ( GF+M ) BLU M A T E R I A L S P E C I F I C A T I O N AND COLOR 14


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PDF 01JL02 01JL02 02JL02
Not Available

Abstract: No abstract text available
Text: 7 103 102 101 R O 100209 PPA ( GF+M ) BLK R O 100208 PPA ( GF+M ) GRA R O 100207 PPA ( GF+M


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PDF 2BJN02 14N002
MCR1336-5

Abstract: MCR1336-10
Text: Average Gate Power-Forward PGF(AV) 1.0 Watt Peak Gate Current-Forward * GFM 5.0 Amp Peak Gate Voltage-Forward V GFM 7.0 Volts Reverse*^ V * GRM 7.0 Operating Junction Temperature Range TJ -65 to +105


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PDF MCR1336-5 MCR1336-10 MCR1336-5 MCR1336-10
Gfg 51a

Abstract: GFG 48A GFM 16A GFM 85A gfx 51a
Text: 5.0 GEH GEK GEL G EM 1SMC16 1SM C 16A 1SMC17 1SM C17A 16 16 17 17 17.8 17.8 , GFH GFK GFL GFM 1SMC36 1SM C36A 1SMC40 1SM C40A 36 36 40 40 40.0 40.0 44.4 44.4


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PDF 1SMC170, Gfg 51a GFG 48A GFM 16A GFM 85A gfx 51a
5SMC22A

Abstract: 5SMC33A MOTOROLA 824 39A GFM 16A 5SMC24A ISMC5.0AT3 5SMC24AT3 MOTOROLA 727 36A 5SMC39A GEZ DIODES
Text: 33.0 5.0 GFG 1SMC30AT3 30 33.3 1 0 48.4 31.0 5.0 GFK 1SMC33AT3 33 36.7 1.0 53.3 28.1 5.0 GFM , 1 1 12 8 13.6 153 17 1 5 5 5 5 71 67 59 5 54 21.2 22 5 25 2 27 7 0.084 0 086 0 088 0.09 15A 16A 18A


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PDF b3b75SS 00fl53t 1SMC78AT3 5SMC91AT3 L3b7255 00fl53b7 5SMC68AT3 5SMC75AT3 5SMC82AT3 5SMC22A 5SMC33A MOTOROLA 824 39A GFM 16A 5SMC24A ISMC5.0AT3 5SMC24AT3 MOTOROLA 727 36A 5SMC39A GEZ DIODES
GFM 19 TVS

Abstract: GFM 16A GFM 51A MOTOROLA 727 36A GFM 36A GGG 62A GFM TVS SMC GFM 13A GFK 12A 447 gev
Text: GDM GDP GDR GDT GDV GDX GDZ GEE GEG GEK GEM GEP GER GET GEV GEX GEZ GFE GFG GFK GFM GFP GFR GFT GFV , 0.105 0.105 0.106 Device Marking 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A


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1999 - GFM 16A

Abstract: GFM 51A GFK 13A GFM TVS SMC gez 68A gem 75 GFr 36A GFP 62A GFM 75A 1.5SMC75AT3
Text: GEV GEX GEZ GFE GFG GFK GFM GFP GFR GFT GFV GFX GFZ GGE GGG GGK GGM GGP GGR GGT {{ Surge current , 0.092 0.094 0.096 0.097 15A 16A 18A 20A 22A 24A 27A 30A 1.5SMC33AT3 1.5SMC36AT3 1.5SMC39AT3


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1995 - IGD 507 an

Abstract: MOTOROLA SEMICONDUCTOR AN1542 pmos Vt AN1542 Nippon capacitors diode gfm
Text: . The time rate of change of drain current is expressed as: Vth Vplt dIdrain dVGS = gfm dt dt t VDS (10) Where dVGS/dt is a representation of the slope for regions 1 and 2, and gfm , Iinrush gfm (max) (11) MOTOROLA AN1542 This plateau voltage can be found by using a transfer , VOLTAGE (VOLTS) Figure 9. MOSFET Transfer Characteristics VDD Iinrush . gfm (max) (17) 3 , 28 Vdc Cfilter = 200 µF Iinrush = 2 Apk VGG = 12 V Vth = 2.7 V gfm (max) = 2.5 S Cload ICgd


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PDF AN1542/D AN1542 AN1542/D* IGD 507 an MOTOROLA SEMICONDUCTOR AN1542 pmos Vt AN1542 Nippon capacitors diode gfm
diode gfm

Abstract: GFm DIODE GFM 66 GFM 250 diode gfm 2 ED42 AGE SCR scr 209
Text: (AV) V GFM VGRM ' GFM t stg 1600 1600 2200 1600 393 250 6500 4685 4040 175,000 800 16 3.0 10 5.0


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PDF Amperes/600-1600 ED421625 diode gfm GFm DIODE GFM 66 GFM 250 diode gfm 2 ED42 AGE SCR scr 209
1997 - MOTOROLA SEMICONDUCTOR AN1542

Abstract: IGD 507 an MOTOROLA smd SCR AN1542 SMPS INRUSH CURRENT LIMITER ntc thermistors for inrush current limiting smps using SCR& mosfet Nippon capacitors smps dc-dc circuits DSA0035015
Text: . The time rate of change of drain current is expressed as: Vth Vplt dIdrain dVGS = gfm dt dt t VDS (10) Where dVGS/dt is a representation of the slope for regions 1 and 2, and gfm , Iinrush gfm (max) (11) MOTOROLA AN1542 This plateau voltage can be found by using a transfer , . MOSFET Transfer Characteristics Iinrush Iinrush . gfm (max) (17) 3. Choose Cgd based on , = 2 Apk VGG = 12 V Vth = 2.7 V gfm (max) = 2.5 S Cload ICgd Dg Cgd SWITCH RG VDD


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PDF AN1542/D AN1542 AN1542/D* MOTOROLA SEMICONDUCTOR AN1542 IGD 507 an MOTOROLA smd SCR AN1542 SMPS INRUSH CURRENT LIMITER ntc thermistors for inrush current limiting smps using SCR& mosfet Nippon capacitors smps dc-dc circuits DSA0035015
ana 608 LED

Abstract: dl304 DL-304 diode gfm ANA 608 CR02A
Text: > v gfm 63 40 1200 1095 6000 100 16 3.0 10 5.0 4.0 -40 to 125 -40 to 125 50 35 142 2500 Amperes , Volts Vgrm ! gfm Tstg Tj - - - d) Per JEDEC STD RS-397, 5.2.2.6. m/max CDL.3 40 Dual


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PDF BP107, Amperes/100-1400 MAX/10 ana 608 LED dl304 DL-304 diode gfm ANA 608 CR02A
2015 - ETU45B

Abstract: ETU27B ETU76B
Text: ground-fault protection module GFM AT (alarm and tripping), see page 1/52. 6) ✓ Additional price , module GFM AT (alarm and tripping), see page 1/52. 6) ✓ Additional price ETU15B cannot be , , see page 1/52. 5) ETU45B and ETU76B with ground-fault protection module GFM AT (alarm and , ) ETU45B and ETU76B with ground-fault protection module GFM AT (alarm and tripping), see page 1/52. 6 , with ground-fault protection module GFM AT (alarm and tripping), see page 1/52. 6) ETU15B cannot be


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PDF 3KD2832-0NE10-0 ETU45B ETU27B ETU76B
110CI

Abstract: MCR107 MCR107-8 MCR107-1 GT-41076 0605
Text: Forward ' gfm 0.2 Amp Peak Gate Voltage - Reverse VGRM 6.0 Volts Operating Junction Temperature Range Tj


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PDF MCR107-8 MCR107 WD19523 110CI MCR107-8 MCR107-1 GT-41076 0605
SMCJ GFR

Abstract: GFM 78 gfm 58 smcj bfk SMCJ marking code bdy gfm 535 marking code BFK 94 marking code BGL BFK 78
Text: GEK GEL GFM GEN GEP GEQ GER GES GET GEU GEV GEW GEX GEY GEZ GFD GFE GFF GFG GFH GFK GFL GFM GFN GFP


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PDF SMCJ10 SMCJ10A SMCJ11 SMCJ11A SMCJ12 SMCJ12A SMCJ13 SMCJ13A SMCJ14 SMCJ14A SMCJ GFR GFM 78 gfm 58 smcj bfk SMCJ marking code bdy gfm 535 marking code BFK 94 marking code BGL BFK 78
1997 - AN-556

Abstract: 4N25 AN556 BYT11-1000 BZX85C20 L6353 STW20NA50
Text: the switch characteristics: VCLAMP = VMILLER + VOVR [4c] IS0 gfm VMILLER = Vth + where: VMILLER VOVR gfm IS0 [4d] is the gate voltage during Miller's modulation of gate capacitance. is , turn-off gfm [6a] I 2gfm [6b] RGoff Ci where: ton is the duration of turn-on switch , resistance is the discharging resistance RGoff gfm is the transconductance of the external power Driver


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PDF AN556 L6353: L6353 AN-556 4N25 AN556 BYT11-1000 BZX85C20 STW20NA50
1997 - scr power control schematic

Abstract: EL 4N25 4n25 application note BYT11-1000 TN197 IGBT DRIVER application note AN-556 AN26-1 L6353 IGBT DRIVER SCHEMATIC chip
Text: VOVR [4c] IS0 gfm VMILLER = Vth + where: VMILLER VOVR gfm IS0 [4d] is the gate , : dV dt turn-on VOUT1 - VMILLER RGon Cr VSS - Vth - dI gfm dt turn-off [6a , the discharging resistance gfm is the transconductance of the external power Driver supply The


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PDF AN556 L6353: L6353 scr power control schematic EL 4N25 4n25 application note BYT11-1000 TN197 IGBT DRIVER application note AN-556 AN26-1 IGBT DRIVER SCHEMATIC chip
1996 - Not Available

Abstract: No abstract text available
Text: MECHANICAL DATA MBGA001 ­ JANUARY 1997 GFM (S-PBGA-N225) PLASTIC BALL GRID ARRAY PACKAGE 27,00 SQ 0,90 Dia Solder Balls 0,60 225 Places 24,00 SQ 16,10 SQ 1,50 3,00 TYP A 1 45° 4 Places 1,17 2,13 0,15 0,60 Seating Plane 0,36 4040186 / A 10/94 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 IMPORTANT NOTICE Texas Instruments (TI


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PDF MBGA001 S-PBGA-N225)
Not Available

Abstract: No abstract text available
Text: GFM REV DESCRIPTION DATE INT 28L0138— 50R— 10 date 0 6 /2 1 /9 0 2 8 L 0 1 3 8


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PDF 28L0138-50R-10 100MHz 2002/95/EC 22AWG 3961A 6192A 28L0138â
1997 - AN-556

Abstract: AN556 application note 100uf25v TN197 scr power control schematic L6353 THOMSON IGBT using smart igbt as "power switch" IGBT DRIVER SCHEMATIC chip BYT11-1000
Text: switch characteristics: VCLAMP = VMILLER + VOVR [4c] IS0 gfm VMILLER = Vth + where: VMILLER VOVR gfm IS0 [4d] is the gate voltage during Miller's modulation of gate capacitance. is the , turn-off gfm [6a] 2gfm [6b] RGoff Ci where: ton is the duration of turn-on switch , resistance is the discharging resistance RGoff gfm is the transconductance of the external power Driver


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PDF AN556 L6353: L6353 AN-556 AN556 application note 100uf25v TN197 scr power control schematic THOMSON IGBT using smart igbt as "power switch" IGBT DRIVER SCHEMATIC chip BYT11-1000
Not Available

Abstract: No abstract text available
Text: SPACE-D PRODUCT PUBLICATION. VISIT o e m ra . SPBW GFm P- M iBgpnm P O S IT R O N I C IN D U S


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PDF --62X PROUDCTS/62/HIGHPERFORMANCED-SUBMINIATURE SDD62S3000A SKI1852
MCR102

Abstract: TO226AA
Text: Watt Watt Amp Volts ·c °c ·c |2t PGM PGF(AV) ' GFM VGRM Tj Tstg - 1. Temperature reference


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PDF O-226AA MCR102 MCR103 TO226AA
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