The Datasheet Archive

GES5306A datasheet (6)

Part Manufacturer Description Type PDF
GES5306A Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
GES5306A General Electric Semiconductor Data Handbook 1977 Scan PDF
GES5306A General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan PDF
GES5306A Others Basic Transistor and Cross Reference Specification Scan PDF
GES5306A Others Shortform Transistor PDF Datasheet Scan PDF
GES5306A Others Shortform Transistor Datasheet Guide Scan PDF

GES5306A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
GES5307

Abstract: 2N3901 monolithic amplifiers 2N5232A 2N3900A 2N3845A 2N3845 2N3844A 2N3844 2N3391A
Text: 100-300 10 mA. 5 3 VCE = 5V. Ic 10mA. Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K , 2K-20K 2mA, 5 1.4 200mA, 200mA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200mA GES5306A NPN 25 7K-70K , specified) GES5305 GES5307 GES5306 GES5308 Voltages GES5306A GES5308A Collector to Base vcbo , in case temperature above 25°C. I-1 -1 GES5305.GES5307 GES5306,GES5308 GES5306A ,GES5308A , . GES5305, GES5307 GES5306, GES5308 GES5306A , GES5308A Typical Curves Typical hpE vs. Ic .01 .02 .04.06


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PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 monolithic amplifiers 2N5232A
2N5089 equivalent

Abstract: D39C4 2N4126 2N4125 2N4124 2N4123 2N3906 2N3905 monolithic amplifiers 2N3903
Text: GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200mA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200mA , GES5308 Voltages GES5306A GES5308A Collector to Base vcbo 25 40 Volts Collector to Emitter VCEO 25 , °C. I-1 -1 GES5305.GES5307 GES5306,GES5308 GES5306A ,GES5308A J_L T -Lo—I 1 e -f- -o3 , , GES5308 GES5306A , GES5308A Typical Curves Typical hpE vs. Ic .01 .02 .04.06 .4 .6 5 1 2 4 6 610 20 40 , TEMPERATURE—*C GES5305, GES5307 GES5306, GES5308 GES5306A , GES5308A hpE vs Ta /c


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 monolithic amplifiers
2N5305

Abstract: 2N5306 to-98 "to-98" package 2N5306 2N5306 equivalent GES5305 TO-98 GES5306A GES5306 2N5305 to-98
Text: , GES5306A 7,000 70,000 (lc = 100mA, VCE = 5V) 2N5306, GES5306A 20,000 - Collector-To-Emitter , 15.7kHz)2N5306A, GES5306A eft Typical 230 nVVHz TERMINAL CONNECTIONS TO-92 Package Lead 1 - Emitter Lead


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PDF a017c 2N5305, GES5305, 92CS-42S2T 92CS-42626 2N5305 2N5306 to-98 "to-98" package 2N5306 2N5306 equivalent GES5305 TO-98 GES5306A GES5306 2N5305 to-98
TO-98

Abstract: transistor MPSA06 2N3904 TO-92 type NPN Transistor TO92 2N3391A transistor 2n3903 transistor TO-92 npn 2N3390 2N2926-5 2n2924 transistor
Text: 7K-70K TO-98 • GES5305 300 25 2K-20K TO-92 • GES5306 300 25 7K-70K TO-92 • GES5306A 300 25 7K-70K


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PDF 1CJ5bfl73 2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 2N3391 2N3391A 2N3392 TO-98 transistor MPSA06 2N3904 TO-92 type NPN Transistor TO92 transistor 2n3903 transistor TO-92 npn 2n2924 transistor
mps 06

Abstract: MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 2N3877
Text: NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN


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PDF 100mA, MPSA55 MPS3702 MPS3704 mps 06 MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 2N3877
MPSA14 MPSA64

Abstract: GES5307 MPS-A13 pnp Central D40C1 2N5306 2N5308A 2N5307 2N5306A 2N5305 t2929
Text: 1.6 0.2 30 GES5306A 0.3 25 0.4 7,000 - 70,000 .002 1.6 0.2 30 GES5307 0.3 40 0.4 2,000 - 20


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PDF 2N5305 2N5306 2N5306A 2N5307 2N5308A GES5305 S5306 GES5306A To-126 0000S23 MPSA14 MPSA64 GES5307 MPS-A13 pnp Central D40C1 2N5306 2N5308A 2N5307 2N5306A 2N5305 t2929
D39C4

Abstract: ei50 2n5306 2N5249A 2N5232A 2N3901 2N3900A 2N3845A quan-tech 2N3844A
Text: 100-300 10 mA. 5 3 VCE = 5V. Ic 10mA. Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K , 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K


OCR Scan
PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 2N5249A 2N5232A quan-tech
quan-tech

Abstract: D39C4 2N3901 2N5232A 2N3900A 2N3845A 2N3845 2N3844A ges92 2N3391A
Text: 100-300 10 mA. 5 3 VCE = 5V. Ic 10mA. Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K , 2K-20K 2mA, 5 1.4 200mA, 200mA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200mA GES5306A NPN 25 7K-70K


OCR Scan
PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 2N5232A ges92
D38S1-4

Abstract: 2N3901 2N5249A 2N5232A 2N3900A 2N3845A 2N3845 2N3844A 2N3844 2N3391A
Text: 100-300 10 mA. 5 3 VCE = 5V. Ic 10mA. Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K


OCR Scan
PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 2N5249A 2N5232A
D39C4

Abstract: 2N5175 2N5174-2N5176 GES5308A GES5308 GES5307 GES5306A GES5306 2N3877 D38L1-3
Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a c• vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA, 200MA GES5308 NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA GES5308A NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K


OCR Scan
PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5175 2N5174-2N5176 GES5308A GES5308 GES5307 2N3877 D38L1-3
NPN Transistor TO92 5V 200mA

Abstract: 2N3877A GES5306A GES5306 GES5305 D38L1-3 2N5306 to-98 2N5305 to-98 2n3877 transistor TO-98
Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a c• vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA, 200MA GES5308 NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA GES5308A NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K


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PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A D38L1-3 2N5306 to-98 2N5305 to-98 2n3877 transistor TO-98
D40C2

Abstract: No abstract text available
Text: CENTRAL SEMICONDUCTOR f c , l D | nfl'HbB 4 1~3 T"29"29 SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) lc ^ ^ O O m A TYPE NPN 2N5305 2N5306 2N 5306A 2N5307 2N5308 2N 5308A GES5305S5306 GES5306A GES5307 GES5308 GES5308A MPS-A65 MPS-A66 MPS-D04 * VCES ^ CASE OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO NO. PNP Pd (Max) TA=25°C hFE @ 1C VCE(S) @ 1C fT Min Mh z Amps 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 Volts 25 25 25 40 40 40


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PDF 2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2
D39C4

Abstract: 2N5305 2N5249A 2N5232A 2N5232 2N5174 2N4425 2N4424 2N4256 2N5175
Text: 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5


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PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A D39C4 2N5305 2N5175
2N5306 equivalent

Abstract: ATI 200M D39C4 2N5232A 2N5232 2N5174 2N4425 2N4424 2N4256 2N5306
Text: 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 2N5306
mhb 7001

Abstract: PJ 1269 D39C4 GES6220 GES6001 GES6000 GES5827 GES5826 GES5825 GES5823
Text: , 200mA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200mA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA


OCR Scan
PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220 GES6001
2N3877

Abstract: 2n3877a 2N3390 2N2926 2N2925 2N2924 2N2923 2N2714 2N2713 2N2712
Text: NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN


OCR Scan
PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a
2N3391A

Abstract: D38S5 2N5249A 2N5232A 2N3901 2N3900A 2N3845A 2N3845 2N3844A 2N3844
Text: 100-300 10 mA. 5 3 VCE = 5V. Ic 10MA. RS = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K


OCR Scan
PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S3' D38S5 2N5249A 2N5232A
2N4424

Abstract: D39C4 quan-tech 2N5305 2N5249A 2N5232A 2N5232 2N5174 2N4425 2N4256
Text: 1.4 200mA, 200mA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200mA GES5307 NPN 40 2K-20K 2mA, 5


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech 2N5305
TRANSISTOR 2n3901

Abstract: 2N390 pnp 2N3901 2N2925 2N2924 2N2923 2N2714 2N2713 2N2712 transistor 2n3391
Text: - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg - 160K, BW = 15.7KHZ, f =


OCR Scan
PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 TRANSISTOR 2n3901 2N390 pnp 2N3901 transistor 2n3391
2N3397

Abstract: 2N3390 2N2926 2N2925 2N2924 2N2923 2N2714 2N2713 2N2712 2N2711
Text: - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg - 160K, BW = 15.7KHZ, f =


OCR Scan
PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3397
2N3901

Abstract: 2N5249A 2N5232A 2N5232 2N5174 2N4425 2N4424 2N4256 GES93 2N5306
Text: . RS = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg -


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100mA, 2N3901 GES93 2N5306
2N5232

Abstract: 2N4256 2N5306 2N5305 2N5249A 2N5232A 2N5174 2N4425 2N4424 2N5309
Text: . Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg -


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5232, 2N5306 2N5305 2N5309
2N3417

Abstract: 2N3390 2N2926 2N2925 2N2924 2N2923 2N2714 2N2713 2N2712 2N2711
Text: - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg - 160K, BW = 15.7KHZ, f =


OCR Scan
PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3417
2N5309

Abstract: 2N5306 2N5305 2N5249A 2N5232A 2N5232 2N5174 2N4425 2N4424 2N4256
Text: . Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg -


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5306 2N5305
2N3391A

Abstract: 2N3390 2N2926 2N2925 2N2924 2N2923 2N2714 2N2713 2N2712 2N2711
Text: - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg - 160K, BW = 15.7KHZ, f =


OCR Scan
PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3391A
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