The Datasheet Archive

GES5305 datasheet (6)

Part Manufacturer Description Type PDF
GES5305 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
GES5305 General Electric Semiconductor Data Handbook 1977 Scan PDF
GES5305 General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan PDF
GES5305 Others Basic Transistor and Cross Reference Specification Scan PDF
GES5305 Others Shortform Transistor PDF Datasheet Scan PDF
GES5305 Others Shortform Transistor Datasheet Guide Scan PDF

GES5305 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N5305

Abstract:
Text: , GES5305 , 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305 , 6 , industrial control applications. The 2N5305, 6, and 6A are supplied in JEDEC TO-98 package, the GES5305 , 6 , » STATE Ôï DE g 3Ô75GÛ1 □017ci4fl E Signal Transistors- / ' 2 ^ >¿7 2N5305, 6, 6A, GES5305 , 6, 6A , , GES5305 2,000 20,000 (lc = 100mA, VCE = 5V) 2N5305, GES5305 hFE 6,000 - (lc = 2 mA, VCE = 5 V) 2N5306 , , GES5305 hfe 2,000 - (VCE = 5V, ic = 2mA, f = 1 KHZ) 2N5306,6A, GES5306,6A 7,000 - - (VCE = 5V, lc =


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PDF a017c 2N5305, GES5305, 92CS-42S2T 92CS-42626 2N5305 "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 GES5306 2N5306A 2n5306 GE TO-98
2N5305

Abstract:
Text: Transistors 2N5305, 6, 6A, GES5305 , 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305 , 6, and 6A are planar, epitaxial, passivated NPN silicon , JEDEC TO-98 pack age, the GES5305 , 6, and 6A are supplied in JEDEC TO-92 package. Devices in TO , 2N5305, 6, 6A, GES5305 , 6, 6A ELEC TR IC AL CH AR AC TER ISTIC S, A t A m b ie n t T e m perature (T /0 , 650 Typical 60 KQ MHZ CC b ^e b 10.5 Typical 7.6 Typical 10 pF 2N5305, GES5305 2N 5306,6A , G E S 53


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PDF 3fl75Dfll OG17c 2N5305, GES5305, S-42S27 10--Typical 2N5305 2n5306 53-06A
GES5307

Abstract:
Text: in case temperature above 25°C. I-1 -1 GES5305.GES5307 GES5306,GES5308 GES5306A,GES5308A , Type BVceo hfe vce(sat) (V) Min.-Max. a c• vce (V) (V) Max. §> lC. 'B GES5305 NPN 25 , Darlington Amplifiers CONSUMER-INDUSTRIAL The General Electric GES5305 , 6, 6A, 7, 8, 8A are NPN, silicon , specified) GES5305 GES5307 GES5306 GES5308 Voltages GES5306A GES5308A Collector to Base vcbo , ) STATIC CHARACTERISTICS MIN. MAX. Collector to Base Breakdown Voltage (Ic = 0.1 ;UA, Ic = 0) GES5305


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PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 2N5249A 2N5232A 2n3901 equivalent
2N5089 equivalent

Abstract:
Text: °C. I-1 -1 GES5305.GES5307 GES5306,GES5308 GES5306A,GES5308A J_L T -Lo—I 1 e -f- -o3 , GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2 , ) (V) Min.-Max. a c• vce (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200mA , CONSUMER-INDUSTRIAL The General Electric GES5305 , 6, 6A, 7, 8, 8A are NPN, silicon, planar, epitaxial, passivated , applications. absolute maximum ratings: (25°C) (unless otherwise specified) GES5305 GES5307 GES5306


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 2N4401 quan-tech
2N5306 equivalent

Abstract:
Text: ) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & , Silicon Transistors r^j 2N5305,6,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent D39C4 ATI 200M 2N5305 2N5306 GES6220
2011 - MPS004

Abstract:
Text: MPSA12 2S0549 HS5305 HS530S HS530SA RN5305 RN530S GES5305 GES5305 2N5305 GES530S GES5306 GES530SA


Original
PDF SOM3003 SOM3000 SOM3004 SOM3001 SOM3005 SOM3002 2NS534 2NS535 2NS53S 2NS537 MPS004 npn darlington motorola to92 HS5305 k0221 MPS-004 PMBTA13 PMBTA14
TO-98

Abstract:
Text: 7K-70K TO-98 • GES5305 300 25 2K-20K TO-92 • GES5306 300 25 7K-70K TO-92 • GES5306A 300 25 7K-70K


OCR Scan
PDF 1CJ5bfl73 2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 2N3391 2N3391A 2N3392 TO-98 transistor MPSA06 2N3904 TO-92 type NPN Transistor TO92 transistor 2n3903 transistor TO-92 npn 2n2924 transistor
D39C4

Abstract:
Text: Type BVCEO hFE VCE(SAT) (V) Min.-Max. a c• vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 , r^j 2N5305,6,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306 and 2N5306A are


OCR Scan
PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 2N5249A 2N5232A quan-tech
mps 06

Abstract:
Text: -92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a c• vCE (V) (V) Max. §> lC. 'B GES5305


OCR Scan
PDF 100mA, MPSA55 MPS3702 MPS3704 mps 06 TO-98 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 GES6220 6513
MPSA14 MPSA64

Abstract:
Text: lU^ICODI GES5305 0.3 25 0.4 2,000 - 20,000 .002 1.6 0.2 30 GÈS5306 0.3 25 0.4 7,000 - 70,000 .002


OCR Scan
PDF 2N5305 2N5306 2N5306A 2N5307 2N5308A GES5305 S5306 GES5306A To-126 0000S23 MPSA14 MPSA64 MPS-A13 pnp GES5307 2N5306 Central D40C1 t2929 2N5307 D40C2 GES5305 GES5306A
D39C4

Abstract:
Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a c• vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA, 200MA GES5308 NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA GES5308A NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K


OCR Scan
PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES5307 GES6220 D38L1-3 2n5306
2N5219

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225tter-Base 2N5219 2N4401 tl 2N3904 TRANSISTOR
NPN Transistor TO92 5V 200mA

Abstract:
Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a c• vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA, 200MA GES5308 NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA GES5308A NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K


OCR Scan
PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A D38L1-3 2N5306 to-98 2N5305 to-98 2n3877 transistor TO-98
2N5223

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225age 2N5223 CEB npn
2N5219

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N5219 2N5227 2N4401
D40C2

Abstract:
Text: CENTRAL SEMICONDUCTOR f c , l D | nfl'HbB 4 1~3 T"29"29 SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) lc ^ ^ O O m A TYPE NPN 2N5305 2N5306 2N 5306A 2N5307 2N5308 2N 5308A GES5305 S5306 GES5306A GES5307 GES5308 GES5308A MPS-A65 MPS-A66 MPS-D04 * VCES ^ CASE OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO NO. PNP Pd (Max) TA=25°C hFE @ 1C VCE(S) @ 1C fT Min Mh z Amps 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 Volts 25 25 25 40 40 40


OCR Scan
PDF 2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2
2N5219

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 100mA, 2N5219 2N5225 2N4401 JEDEC 2N3904
2N4410

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225mA) 2N4410 2N4401
GES5307

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150rnA, GES5307 GES93 2n4123 transistor tl 2N3904 TRANSISTOR
transistor 2n3903

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 transistor 2n3903
D39C4

Abstract:
Text: ) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, &


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A D39C4 2N5306 2N5305 2N5175
2n5226

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225ent 2n5226 2n4123 transistor transistor 2N4401
2N3877

Abstract:
Text: -92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a c• vCE (V) (V) Max. §> lC. 'B GES5305


OCR Scan
PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220
2n3906 REPLACEMENT

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 10Kfi, 2n3906 REPLACEMENT 2n3904 TRANSISTOR REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT 2n4123 transistor 2n4125 replacement pnp -NPN silicon high power transistor
2n5088 transistor

Abstract:
Text: GES2907 PNP 40 100 : 300 150 10 ■MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n5088 transistor SL 100 NPN Transistor 2N4401
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