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BCB60

Abstract: BC860 BC859A BC859B BC859C philips hq BC860A BC860B BC860C BCB59
Text: ■bhS3n31 □ GE447lì 755 BIAPX N AUER PHILIPS/DISCRETE b?E J> BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits. QUICK REFERENCE DATA BC859 BC860 Collector-emitter voltage (+ Vgg = 1 V) ~VCEX max. 30 50 V Collector-emitter voltage (open base) -vCEO max. 30 45 V Collector current (peak value


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PDF bhS3n31 GE447là BC859 BC860 OT-23 BC859 bbS3T31 G024M63 BCB60 BC860 BC859A BC859B BC859C philips hq BC860A BC860B BC860C BCB59
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