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Part Manufacturer Description Datasheet Download Buy Part
CL21C331GBANNNC Samsung Electro-Mechanics Capacitor, Ceramic, Chip, General Purpose, 330pF, 50V, ±2%, C0G/NP0, 0805 (2012 mm), 0.026T, -55º ~ +125ºC, 7 Reel
CL21C180GBANNNC Samsung Electro-Mechanics Capacitor, Ceramic, Chip, General Purpose, 18pF, 50V, ±2%, C0G/NP0, 0805 (2012 mm), 0.026T, -55º ~ +125ºC, 7 Reel
CL21C101GBANNNC Samsung Electro-Mechanics Capacitor, Ceramic, Chip, General Purpose, 100pF, 50V, ±2%, C0G/NP0, 0805 (2012 mm), 0.026T, -55º ~ +125ºC, 7 Reel
APCFA016GBAN-WFTM1 Apacer Technology Inc MEMORY CARD CFLASH 16GB MLC
APCFA002GBAN-BT Apacer Technology Inc MEMORY CARD CFAST 2GB SLC
CL21C221GBANNNC Samsung Electro-Mechanics Capacitor, Ceramic, Chip, General Purpose, 220pF, 50V, ±2%, C0G/NP0, 0805 (2012 mm), 0.026T, -55º ~ +125ºC, 7 Reel

GBAN-PVI-1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
GBAN-PVI-1

Abstract: MPIC-5 IGBT ac switch circuit mosfet ac switch relay design gban-pvi mosfet dc switch 945A PVI1050 AC Switch Book Microelectronic
Text: . Depending on the devices being driven, switching times can be greater than 1 ms. For more information on this technique, please see Application Note GBAN-PVI-1 which appears in the Microelectronic Relay


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PDF 94-5a PVI1050. GBAN-PVI-1 MPIC-5 IGBT ac switch circuit mosfet ac switch relay design gban-pvi mosfet dc switch 945A PVI1050 AC Switch Book Microelectronic
1998 - IGBT ac switch circuit

Abstract: mosfet ac switch GBAN-PVI-1 MPIC-5 parallel mosfet ultrafast igbt MOSFET designer manual gban IGBT parallel power cycling AC SWITCH
Text: greater than 1 ms. For more information on this technique, please see Application Note GBAN-PVI-1 which , . The two gates must be driven approximately 10V above this waveform. International Rectifier 1


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PDF PVI1050. IGBT ac switch circuit mosfet ac switch GBAN-PVI-1 MPIC-5 parallel mosfet ultrafast igbt MOSFET designer manual gban IGBT parallel power cycling AC SWITCH
1998 - DT94-15

Abstract: DOWNLOAD DT94-15 IR2110 h bridge application notes GBAN-PVI-1 DT98-2 ballast Self-Oscillating h bridge ir2113 ir21xx Self-Oscillating SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET
Text: Relays 106 1 AN107: Short Circuit Withstand Capability of the Photovoltaic Relay 107 6 Jul-95 DT95- 1 Replacing Mechanical Relays W/ PVT412L in FAX/Modem Designs 9501 2 Oct-95 GBAN-PVI-1 : The PVI. A Versatile New Circuit Element 758 5 Jun-96 For a List of IR , -96 Demo Board Selection Guide 7313 1 May-96 Datasheets Revision Type of Driver IR2101 , 60084 6 Jan-97 For a List of IR Distributors and Sales Reps, Select Document # 001 Page 1


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PDF May-96 IR2101 Feb-96 IR2102 IR2103 Jun-98 IR2104 DT94-15 DOWNLOAD DT94-15 IR2110 h bridge application notes GBAN-PVI-1 DT98-2 ballast Self-Oscillating h bridge ir2113 ir21xx Self-Oscillating SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET
GBAN-PVI-1

Abstract: HEXFET Power MOSFET designer manual GBAN-PVI-1 power supply using IR2155 HEXFET Power MOSFET designer manual mosfet reliability testing report IR2113 inductive motor control 957B 957b so8 HEXFET Power MOSFET designer manual an universal motor using ac voltage regulator data s
Text: . GBAN-PVI-1 SHORT CIRCUIT WITHSTAND CAPABILITY OF THE PHOTOVOLTAIC R E L A Y , DESIGNER'S M A N U A L . GSP- 1 HEXFET , . HDM- 1 , VOL. 1 HEXFET DESIGNER'S M A N U A L . HDM- 1 , VOL. 3 HEX-PAK - 1 MICROELECTRONIC RELAY DESIGNERS M AN U


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PDF IR6000 IR2155 GBAN-PVI-1 HEXFET Power MOSFET designer manual GBAN-PVI-1 power supply using IR2155 HEXFET Power MOSFET designer manual mosfet reliability testing report IR2113 inductive motor control 957B 957b so8 HEXFET Power MOSFET designer manual an universal motor using ac voltage regulator data s
1999 - DT94-15

Abstract: IR2110 h bridge application notes ir21xx GBAN-PVI-1 halfbridge design ir2109 IR2110 H bridge driver circuit IR2154 DT94-10A AN978A diode gen 52
Text: AN107: Short Circuit Withstand Capability of the Photovoltaic Relay DT95- 1 Replacing Mechanical Relays W/ PVT412L in FAX/Modem Designs GBAN-PVI-1 : The PVI. A Versatile New Circuit Element 101 104 105 106 107 9501 2 6 4 1 6 2 Jul-95 Jul-95 Jul-95 Nov-95 Jul-95 Oct-95 758 5 Jun-96 For a List of IR , -99 Apr-99 Apr-99 Apr-99 Jan-97 Apr-99 Apr-99 Apr-99 Apr-99 Apr-99 7311 7313 3 1 May-96 May-96 Document # Pages Date For a List of IR Distributors and Sales Reps, Select Document # 001 Page 1 Control


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PDF IR1110 IR1210 IR2101 IR21014 IR2102 IR21024 IR2103 IR21034 IR2104 IR21044 DT94-15 IR2110 h bridge application notes ir21xx GBAN-PVI-1 halfbridge design ir2109 IR2110 H bridge driver circuit IR2154 DT94-10A AN978A diode gen 52
photo thyristor application

Abstract: IR2130 APPLICATION NOTE IR2130 APPLICATION NOTES igbt driver ir2130 circuit AN-978A application IR2130 AN978A Photo Relays IR2130 APPLICATIONS NOTES ir2130 application
Text: No file text available


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PDF AN-983 AN-984 AN-978A AN-979B AN-982 AN-985 IR8200 IR2130: AN-100 photo thyristor application IR2130 APPLICATION NOTE IR2130 APPLICATION NOTES igbt driver ir2130 circuit application IR2130 AN978A Photo Relays IR2130 APPLICATIONS NOTES ir2130 application
1998 - SCR gate drive circuit

Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 GBAN-PVI-1 SCR Gate Drive for ac to dc converter
Text: Schemes for IGBT Modules 756 10 Jun-96 GBAN-PVI-1 : The PVI - A Versatile New Circuit Element , Document # 001 Page 1 App. Notes Design Tips Catalog of Available Documents INT-941 Revised 8 , (High Side) 9412 1 Nov-95 DT94-13 Push-Pull Drive Circuit 9413 1 Nov-95 DT95-2 New Fifth Generation Power Mosfets: A Replacement Guide 9502 4 May-95 DT97- 1 Reducing , -Phase Bridge Drive with Overcurrent Protection (IR2130) 9411 1 Nov-95 DT94-17 Thermal Resis


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PDF INT-936 May-97 Jun-97 AN-936) Jun-96 SCR gate drive circuit DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 GBAN-PVI-1 SCR Gate Drive for ac to dc converter
1999 - DT94-15

Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 GBAN-PVI-1 AN-948 DT-93-4 HEXFETs FETs
Text: Fax-On-Demand (310) 252-7100 758 759 5 6 Jun-96 Jun-96 GBAN-PVI-1 : The PVI - A Versatile New Circuit Element , Page 1 App. Notes Design Tips Catalog of Available Documents INT-941 Revised 5/11/99 , -7A DT94-8 DT94-12 DT94-13 DT95-2 DT97- 1 Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand (310 , 9402 9407 9408 9412 9413 9502 9701 7 8 4 4 5 5 4 8 4 3 6 4 2 1 1 4 2 Oct-96 Aug-94 Aug-94 Jul-97 May , Surface Mount Devices 9404 9405 9409 9411 9417 2 2 7 1 2 Dec-94 Dec-94 Nov-95 Nov-95 Nov-95 984 994 9205


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PDF INT-936 AN-936) INT-937 Jun-96 Oct-98 DT94-15 ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 GBAN-PVI-1 AN-948 DT-93-4 HEXFETs FETs
HEXFET Power MOSFET designer manual

Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details ic cd4093 CI 7407 CD4093 IR2121 equivalent
Text: Table of Contents Page 1 . Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations , simplicity. Special considerations for IGBTs are contained in INT-990) 1 . GATE DRIVE VS BASE DRIVE The conventional bipolar transistor is a current-driven device. As illustrated in Figure 1 (a). a current must , Figure 1 . Bipolar Transistor is Current Driven, HEXFET is Voltage Driven The HEXFET®is fundamentally


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PDF AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details ic cd4093 CI 7407 CD4093 IR2121 equivalent
1996 - GBAN-PVI-1

Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types zener in4148 dc to dc chopper 240XT250-3EA2 IRF540 complementary
Text: information on the PVI can be found in Application Note GBAN-PVI-1 which appears in the Microelectronic Relay , mentioned for the sake of simplicity. Special considerations for IGBTs are contained in INT-990) 1 . GATE , Figure 1 (a). a current must be applied between the base and emitter terminals to produce a flow of , ) Bipolar Transistor (b) HEXFET Figure 1 . Bipolar Transistor is Current Driven, HEXFET is Voltage , ®S FROM TTL Table 1 shows the guaranteed sourcing and sinking currents for different TTL families at


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PDF AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types zener in4148 dc to dc chopper 240XT250-3EA2 IRF540 complementary
2010 - ca3103

Abstract: 2n2222 -331 Cd4093 SiHF
Text: : hvm@vishay.com www.vishay.com 1 APPLICATION NOTE The current rating of an electrical device, be that a , is a current-driven device. As illustrated in figure 1 (a). A current must be applied between the , VOLTAGE SOURCE (b) Power MOSFET Fig. 1 - Bipolar Transistor is Current Driven, Power MOSFET is , . DRIVING STANDARD POWER MOSFETs FROM TTL Table 1 shows the guaranteed sourcing and sinking currents for , . TABLE 1 - DRIVING POWER MOSFETs FROM TTL (Totem Pole Outputs) Logic conditions 54/74 Logic Zero


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PDF AN-937 ca3103 2n2222 -331 Cd4093 SiHF
1996 - 266CT125-3E2A

Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
Text: information on the PVI can be found in Application Note GBAN-PVI-1 which appears in the Microelectronic Relay , simplicity. Special considerations for IGBTs are contained in INT-990) 1 . GATE DRIVE VS BASE DRIVE The conventional bipolar transistor is a current-driven device. As illustrated in Figure 1 (a). a current must , Figure 1 . Bipolar Transistor is Current Driven, HEXFET is Voltage Driven The HEXFET®is fundamentally , STANDARD HEXFET®S FROM TTL Table 1 shows the guaranteed sourcing and sinking currents for different TTL


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PDF AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
2007 - L7251-3.1

Abstract: B134G0943#1 AL133-00015.1 MPAW37.1 B133HTN01.1 A602192.1 ce6v14.1 L6284-3.1 1/transistor+ba41 MAR3-T13-144R7-0.1
Text: HEIGHT ( X DIMENSION) NO. OF CHIPS 1 2 3 4 5 UNLEADED ASSEMBLIES NN, NP .100 (2.54) .100 , 154 184 224 274 334 394 474 564 684 824 105 125 155 185 225 275 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 3 3 3 4 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 3 3 3 4 5 1 1 1 1 1 1


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PDF
2010 - AL133-00015.1

Abstract: L7251-3.1 AP6KE9.1 CSA107.1 A608569.1 1/CN0944 1+to+2+MIPI+buffer+IC
Text: Solderless splices CLOSED-END E F L E L Style 2 F Style 1 Style 2 Style 1 , Dimensions mm (in.) Tool No. YS-2622 YS-2216 YS-1614 YS-1210 YS-8S YA- 1 YA-2 YA-4 o o o o o o o o o o o o o o , ) (4.0 to 9.0) CE1(CE-100) CE2(CE-230) CE5(CE-550) CE8(CE-800) 2-SDW 0.5-SD 1 -SD 2-SD 5.5-SD 8-SD 2 1 , (.315) 22.2 (.874) 10.2 (.402) o o o o Nylon o o o o o o o 1 ,000 1 ,000 500 250 1 ,000 5,000 1 ,000 1 ,000 500 250 9.3 (.366) 12.0 (.472) 9.3 (.366) 12.0 (.472) Note: 1 ) Products with the JIS


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PDF E42024 LR20812 JQ0607003 YS-2622 YS-2216 YS-1614 YS-1210 BCT-0514 CE-800/CE-800V) AL133-00015.1 L7251-3.1 AP6KE9.1 CSA107.1 A608569.1 1/CN0944 1+to+2+MIPI+buffer+IC
UL E42024

Abstract: L7251-3.1 A612826.1 1/sn1350 th2167.1 CSA107.1 C2807 ys1614 LR20812 E42024
Text: Solderless splices ¿D ¿B E Style 1 F E L Actual Style 1 Style 2 CE1(CE , (.150) 7.2 (.283) 9.5 (.374) 28.0(1.102) 12.0 (.472) 1 9.5 (.374) 4.5 (.177) o o , 1.75) 1 -SD 15.2 (.598) 5.9 (.232) 8.0 (.315) 2.2 (.087) 5.0 (.197) 6.2 (.244 , to 1.75) 16 to 14 E YA-2 YA-4 22 to 16 ød L F YA- 1 Standard Style , splice. 686022 YS-2622 LR20812 Applicable Wire Note: 1 ) Products with the JIS mark conform


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PDF CE-100) CE-230) CE-550) CE-800) UL E42024 L7251-3.1 A612826.1 1/sn1350 th2167.1 CSA107.1 C2807 ys1614 LR20812 E42024
111L2

Abstract: 13007 h3 PEF41068FV1.1 L6284-3.1 DSTH506010.1 L7251-3.1 AL133-00015.1 j1 3003 E 13007 1/CN0944
Text:  1 MIL-M-38510/320C 6 March 1985_ SUPERSEDING MIL-M-38510/320B 28 February 1984 MILITARY , ioecification is approved for use by all Departments and Agencies of the Department of Defense. 1 . SCOPE , , cascadable Presettable 4-bit binary counter, cascadable Q3 Decade counter 04 4-bit binary counter 1 2 2 , -38510, appendix C) A F-l (14-lead, 1 /4" x 1 /4"), flat package i F-3 14-lead 3/16" x 1 /4"), flat package f D-l (14-lead, 1 /4" x 3/4"), dual-in-line package o c ; (U lead 1 /4" x 3/8"), flat package \ cl (terminal


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PDF MIL-M-38510/320C MIL-M-38510/320B MIL-M-38510, officei1985-505-038 111L2 13007 h3 PEF41068FV1.1 L6284-3.1 DSTH506010.1 L7251-3.1 AL133-00015.1 j1 3003 E 13007 1/CN0944
L7251-3.1

Abstract: L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 PEF3304EV2.1 DSTH506010.1 AU1329.1 A612826.1 PMB6256-V1.1
Text: 1 Datasheet D 2DFDD D 7!F D"#$FD 8F7 8%995&'7"D 1 1 %DC78C4E91 E59133AA14A38C4E119AA713A74EC8C4E1 1 CE17 , A59A8#1431FA1F7CEA91 %DC78C4E918813A@6C3A104C7A1AE681 1 /A1BA7C3C78C4E91 11 A38CE14&A3196D13EA 1 "01841">01 *AEA3D1+A973C8C4E1 ,-./01 1 AE2DA91 735C4C51 5C3A78CC8 1 83461 2AF1343FCE 1 8A7E4D4 1 69CE1 8&41 4FEC5C3A78C4ED1 FC7344EA91 D7A51 FF1 38"1 ,AF1 343FCE1 8A7E4D4 1 34C5A91 93A31 5C3A78CC8 1 8


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PDF 8C4E91 E59133AA14 13A74 8C4E19 98AF91 2DA15A C7A91967 91F42CDA1 CEA91 8C4E918 L7251-3.1 L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 PEF3304EV2.1 DSTH506010.1 AU1329.1 A612826.1 PMB6256-V1.1
th2167.1

Abstract: L7251-3.1 AL133-00015.1 NJW1167V QFP32 NJW1167FJ2 SDIP32 SSOP32 PMB6610RV2.1 TK1337.1
Text: CVB CVW CTH CTL CSR GND V+ Vref - 1 - NJW1167/A s SSOP32, SDIP32 INa INb 32 , 13 ADR CTL 20 14 SDA CSR 19 15 SCL Vref 18 16 No. 1 GND V+ 17 No V+ 1 INa 17 2 SR-FIL 18 Vref 3 , 28 TONE-Hb 13 ADR 29 LF1 LPF 1 14 SDA I2C 30 LF3 LPF 3 , TONE-Haa PORT0 GND AUX1 INa AUX0 V+ AGC1 INb OUTa Vref OUTW LF2 1


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PDF NJW1167/A NJW1167/ALPF NJW1167V NJW1167AL NJW1167FJ2 NJW1167: SSOP32, QFP32-J2 NJW1167A: th2167.1 L7251-3.1 AL133-00015.1 NJW1167V QFP32 NJW1167FJ2 SDIP32 SSOP32 PMB6610RV2.1 TK1337.1
L7251-3.1

Abstract: aa705 L6284-3.1 CD3E0P.1 1/CN0944
Text: 1 1234456734 1 89ABCDE1ACF8C19BCEF99BC3EC9C 1 1C3B1BEFCAB9911 DE51F33B31111E5 1 51 ! 1 "1!"51 #561$1%%&'1"61566561##"!71 D" 1 E5(5151!16!)5* 1 E51F33B31"561 E)E1)! 1 "51! 1 " 1 )! 1 "571+55!)1E)E1)! 1 "51 "615, 1 )!* 1 E51F33B31E5#1#6"(51655(561 5!( 1 E6")E1E)E1)! 1 ! 1 "1!"51)6571 +55!) 1 " 1 )! 1 "51"616"!) 1 )!* 1  1 #51-F$ 1 6 1 "1"561E)E561!5671


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PDF 89ABCDE1ACF DE51F D5665 1F/D15 E5165 L7251-3.1 aa705 L6284-3.1 CD3E0P.1 1/CN0944
1998 - SS10

Abstract: SS106 SS108 sh362 L7251-3.1 ce6v14.1 1/CN0944
Text: WR SULRU DSSURYDO EDVHG RQ WKH VDLG DFW1 7DEOH RI &RQWHQWV 41 *( 1 (5$/ 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 404 414 )HDWXUHV 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 406 415 3URGXFW 6HULHV 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 407 416 %ORFN 'LDJUDP 1 1 1 1 1


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PDF
ANI 1015

Abstract: LT 5251 TEA 1091 L7251-3.1 S11595.1 1/CN0944 PMB6610RV2.1
Text: for use by all Departments and Agencies of the Department of Defense. 1 . SCOPE 1.1 Scope. This , : Out!i ne 1etter Case outline (see MIL-M-38510 , appendix C) E D-2 (16 pin, 1 /4" x 7/8"), dual-in-line package F F-5 (16 pin, 1 /4" x 3/8"), flat-package 2 C-2 (20-terminal, .350" x .350"), square chip , ) Storage temperature range - -65 C to +150 C Maximum power dissipation (Pq) per gate _ 1 /- 55 roW , ) - - -.+ 1 65 ° C 7/ Maximum output current- - - - - - - - - - - -50 mA 1 / Must


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PDF MIL-M-38510/62A MIL-M-38510/62 MIL-M-3851D. MIL-M-38510/62A ANI 1015 LT 5251 TEA 1091 L7251-3.1 S11595.1 1/CN0944 PMB6610RV2.1
74hc

Abstract: SOT27-1 sot27 SOT109-1 SOT163-1 SOT402-1 SOT360-1 SOT38 SOT339-1 1/CN0944
Text: COUNT DIL SO SSOP TSSOP 74HC/HCT00 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT02 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT03 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT04 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCTU04 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT08 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1 74HC/HCT10 14 SOT27- 1 SOT108- 1 SOT337- 1 SOT402- 1


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PDF 74HC/HCT00 OT27-1 OT108-1 OT337-1 OT402-1 74HC/HCT02 74hc SOT27-1 sot27 SOT109-1 SOT163-1 SOT402-1 SOT360-1 SOT38 SOT339-1 1/CN0944
A5B13

Abstract: cd 3301 1/sn1350 PMB6610RV2.1
Text: 1 12345671879 1 9A993 9!!9 1 193"1"#9"#$19 19%3"9$&1"1 CD51EF38E8111116 1  1  C1 !C 1"#D1$$%&'1 "DD1 1 (5)*5(1+61"#D*)1+1,-*5( 1 (+565*#- 1 (.- 1 ,*(1+-#5671 *( 1 "(51+651.5*01/56)571CD512 136#5#*16.#1651*#5)6#5( 1 * 1 #D51%&1#1D5/51D)D12 1#-56*571 12345671879 CD51 EF38E81  1 54,-5( 1 * 1  1 /5601 4-'1 -5


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PDF CD51EF 571CD512 5/51D 37BB44151373B44 -071CD51 D5614 71CD51 1EEC15 D5136 A5B13 cd 3301 1/sn1350 PMB6610RV2.1
D1911

Abstract: B36D
Text: 12345623782348239AB1C12D4E654FF52 1 1 DEFFE6 83D7D46 66 1 11 , (1B35711-1B3571*C 1 18581B6851/883+1 11 921%01=!16&1?81B5684361 11 , / 61) 1 < 1 &!43671717843&3813181%'()&() 1 *21/4+11 %'() 1 ,31B6851*21 4+1757134!3161884361 , ! % 1 '()&()11%'()5(E1757 1 11


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PDF 12345623782348239AB1C12D4E654FF E1469 81C51 581B6 81B56 1C178 F1712 65971B1 B62CBC65 87M128KS934567893 D1911 B36D
AL133-00015.1

Abstract: 48ED
Text: 12324232526272 123456789AB6CDC6E7C3F8 88BB63888 ACF 1 8!577B2D"82EFC77B28 #$%8 1 1 1 & #'8()*'&)98 1 21 3179764 18!"1 21 #$AA97B51$%B3F&3BF76B16AA%3 6B394'1 79 1 ()(*+&,51B91)+&,511 21 #$AA97B51%34-1%4B 1 $A1B91D-11 .3B9$B1/81 21 0E12 1 91$%6B119$BA$B1A9.71 21 8651BA76B$717641F*381B91 381 21 #$AA97B516AA%3 6B3941.3B , )<41B91 =*)EE4> 1 1 *11+*+ ,98 1 21 B79'13946%16411!9416$%1 /5/16AA%3 6B3941


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PDF 123456789AB6CDC6E7C3F8 577B2D C77B28 AA97B51 3BF76B 6B394 51B91 AA97B51 A1B91 381B91 AL133-00015.1 48ED
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