The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

GAAS FET AMPLIFIER x-band 10w Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , and reliable GaAs process, taking maximum advantages of equipment and technique proven in the silicon , of catalytic metals result in a highly reliable FET without susceptibility to hydrogen poisoning


Original
PDF
x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , was to create a low cost, highly manufacturable and reliable GaAs process, taking maximum advantage , gate structure and the absence of catalytic metals result in a highly-reliable FET , without


Original
PDF
2006 - MMIC X-band amplifier

Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features     ï , suitable for eutectic attachment. Ordering Information RFHA5966A RFHA5966AS2 X Band 10W High Power Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET , performance X-Band Gallium Arsenide Monolithic Amplifier . It has a 41dBm PSAT at 9.5GHz and is well suited


Original
PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier
2006 - RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966AX Band 10W High Power Amplifier GaAs MMIC RFHA5966A X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated , RFHA5966AS2 X Band 10W High Power Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT , stage, high efficiency, high performance X-Band Gallium Arsenide Monolithic Amplifier . It has a 41dBm


Original
PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
viasat

Abstract: x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
Text: of size, Figure 3: Passive UltraCMOS FET mixer demonstrates cost, reliability and performance , for FET . designs can be easily transferred between wafer fabs, assuring military customers that , source. In contrast, GaAs wafer fabs tend The UltraCMOS process is already in use to manuto differ from , excellent lot-to-lot repeatability as compared to GaAs , which can vary from lot-to-lot and has Switches , Digest JANUARY 2009 amplifier (LNA) bypass. Specifically, the PE42510A and PE42650A feature high


Original
PDF com/articles/2008/2008 PE95420) viasat x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
2002 - MMIC X-band amplifier

Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w MA08509D x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier
Text: V 1.00 MA08509D 10W X-Band Power Amplifier 8.0 ­11.0 GHz Features E E E E 8.0-11.0 GHz GaAs MMIC Amplifier 8.0 to 11.0 GHz Operation 10 Watt CW Saturated Output Power Level , < -30 dBc V1.00 10W X-Band Power Amplifier 2/6 MA08509D Maximum CW Operating , product information. V1.00 10W X-Band Power Amplifier 3/6 MA08509D 50 48 46 44 42 40 , information. V1.00 10W X-Band Power Amplifier 5/6 MA08509D Mechanical Information Chip Size


Original
PDF MA08509D MA08509D MMIC X-band amplifier mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier
2002 - x-band mmic

Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier
Text: RO-P-DS-3006 - A- 10W X-Band Power Amplifier 8.0 ­11.0 GHz MA08509D Features 8.0 , ) Operation Self-Aligned MSAG® MESFET Process 8.0-11.0 GHz GaAs MMIC Amplifier Primary Applications , Maximum 11.0 41.5 Units GHz dBm % dB RO-P-DS-3006 - A- 2/6 10W X-Band Power Amplifier Maximum CW , /6 10W X-Band Power Amplifier 50 48 46 44 42 40 38 36 34 32 30 8 8.5 9 9.5 10 10.5 MA08509D , . RO-P-DS-3006 - A- 4/6 10W X-Band Power Amplifier 40 MA08509D 35 30 25 20 15 10


Original
PDF RO-P-DS-3006 MA08509D MA08509D x-band mmic mmic AMPLIFIER x-band 10w x-band power amplifier
2002 - x-band limiter

Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
Text: RO-P-DS-3002 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , Radar Description The MA01502D is a balanced 2-stage low noise amplifier with on-chip, receiver , / A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG , (Max at Pin= 10W ) IDMAX 40+IDD mA Power Handling (CW up to 30 minutes) PRF 10 W


Original
PDF RO-P-DS-3002 MA01502D MA01502D x-band limiter x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter 6 ghz amplifier 10w
2002 - x-band limiter

Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Text: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , Airborne Radar Description The MA01502D is a balanced 2-stage low noise amplifier with on-chip , using M/ A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate , Current (Max at Pin= 10W ) IDMAX 40+IDD mA Power Handling (CW up to 30 minutes) PRF 10


Original
PDF MA01502D MA01502D x-band limiter MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
2005 - GAAS FET AMPLIFIER x-band 10w

Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added , 1 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Power , GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Power Amplifier Measurements (cont , 3 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Power


Original
PDF 03-Aug-07 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 XP1006 GAAS FET AMPLIFIER x-band 10w XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006-BD-000V
2002 - x-band limiter

Abstract: x-band mmic LNA x-band MMIC limiter band Limiter MA01503D
Text: RO-P-DS-3003 - - MA01503D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , Radar Description The MA01503D is a balanced 3-stage low noise amplifier with on-chip, receiver , 's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process , dBm Drain Current (Max at Pin= 10W ) IDMAX 60+IDD mA Power Handling (CW up to 30 minutes


Original
PDF RO-P-DS-3003 MA01503D MA01503D x-band limiter x-band mmic LNA x-band MMIC limiter band Limiter
2002 - x-band limiter

Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
Text: V 1.00 MA01503D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , Radar Description The MA01503D is a balanced 3-stage low noise amplifier with on-chip, receiver , 's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process , dBm Drain Current (Max at Pin= 10W ) IDMAX 60+IDD mA Power Handling (CW up to 30 minutes


Original
PDF MA01503D MA01503D x-band limiter x-band mmic band Limiter LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
2005 - P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added , 1 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Power , . ©2008 Mimix Broadband, Inc. Page 2 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - , . ©2008 Mimix Broadband, Inc. Page 4 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 -


Original
PDF 11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the , OPERATING PRECAUTIONS GaAs FET and HEMT devices should be carefully handled and operated in order to maintain the high reliability of these devices. A. PRECAUTIONS AGAINST ELECTROSTATIC DISCHARGE GaAs FET , attention must be paid in handling chips with tweezers because GaAs is more brittle than Si. A. Die


Original
PDF
2007 - FMA3012

Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
Text: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: · · · Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band Gallium Arsenide monolithic amplifier . It is suitable for use in communication, instrumentation and electronic , INSTRUCTIONS: ORDERING INFORMATION: PART NUMBER GaAs devices are fragile and should be handled with


Original
PDF FMA3012 FMA3012 22-A114. MIL-STD-1686 MILHDBK-263. 22-A114 x-Band High Power Amplifier x-band mmic
x-band mmic core chip

Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG® Process Abstract This paper describes , shifter, multi-bit attenuator, amplifier and serial-to-parallel converter functions using MSAG® Process 5 , deliverables have been developed using the MSAG® process. Microwave FET structures optimized for power (5A , gain stages and an output driver amplifier . An integral 11-bit serial-to-parallel converter (SPC) completes the makeup of the chip. The die is 6x4mm and is 75um thick. 75um was chosen for the GaAs


Original
PDF
high power fet amplifier schematic

Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Text: to lose track of the fact that most of the power characteristics of a GaAs MESFET amplifier are , simulation is presented. Introduction The design of microwave GaAs high power amplifiers (HPAs) to , amplifier design based upon voltage and current waveform limits is called loadline design [1]. Loadline , will present loadline from the point of view of a working level GaAs MESFET microwave power MMIC , amplifier schematic shown in Figure 1. First, we'll treat the The author is with M/A-COM 5310 Valley Park


Original
PDF 30FETs 20FETs 12-Watt high power fet amplifier schematic GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Not Available

Abstract: No abstract text available
Text: ENLARGEMENT DESCRIPTION The Texas Instruments TGA8286-EPU is a GaAs monolithic amplifier designed for use as an X-band power amplifier . A 2.4-mm and a 9.6-mm HFET provide 16-dB nominal gain from 8 to , Power Amplifier TGA8286-EPU 8 to 10.5-GHz Frequency Range, X-band Two Stage 5-W HFET Power Amplifier 37% P.A.E. at 2 to 3-dB Gain Compression 17-dB Small Signal Gain Bias can be Applied from , ail: GaAs @ ti.com Web: http://www.ti.com /m gp app: 6270 40 TYPICAL OUTPUT POWER VD


OCR Scan
PDF TGA8286-EPU 17-dB TGA8286-EPU 16-dB trans130
x-band power amplifier

Abstract: MMIC X-band amplifier
Text: DESCRIPTION The Texas Instruments TGA8286-EPU is a GaAs monolithic amplifier designed for use as an X-band power amplifier . A 2.4-mm and a 9.6-mm HFET provide 16-dB nominal gain from 8 to 10.5-GHz with a typical , TGA8286-EPU Power Amplifier 8 to 10.5-GHz Frequency Range, X-band Two Stage 5-W HFET Power Amplifier 37% P.A.E. at 2 to 3-dB Gain Compression 17-dB Small Signal Gain Bias can be Applied from Either , s Microwave G aA s Products Phone: 972 995 8465 Fax: 972 995 4288 Em ail: GaAs @ ti.com


OCR Scan
PDF TGA8286-EPU 17-dB TGA8286-EPU 16-dB x-band power amplifier MMIC X-band amplifier
x-Band High Power Amplifier

Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band , process. n n n n n n 10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz , France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X-band High Power Amplifier , Specifications subject to change without notice X-band High Power Amplifier CHA7010 Typical measured


Original
PDF CHA7010 CHA7010 DSCHA70103135 x-Band High Power Amplifier 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters
2005 - Not Available

Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added , to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - , U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 , to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 -


Original
PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 XP1006
CHA7010

Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band , process. n n n n n n 10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz , France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X-band High Power Amplifier , Specifications subject to change without notice X-band High Power Amplifier CHA7010 Typical measured


Original
PDF CHA7010 CHA7010 DSCHA70102175 -24-June-02 x-Band High Power Amplifier x band Gaas Power Amplifier 10W
2005 - XP1006-BD

Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features · X-Band 10W Power Amplifier · 21.0 dB , 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Power Amplifier Measurements (Pulsed Mode F=10 kHz , 8.5-11.0 GHz GaAs MMIC Power Amplifier Power Amplifier Measurements (cont.) Output power (Vd=8V, Vgg =-5V , 8.5-11.0 GHz GaAs MMIC Power Amplifier Mechanical Drawing 4.290 (0.169) 1.354 0.470 (0.053) (0.018) 0.170 , 8.5-11.0 GHz GaAs MMIC Power Amplifier MTTF MTTF is calculated from accelerated life-time data of single


Original
PDF XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
2005 - P1006

Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W , =4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large , U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 , accept their obligation to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier , . 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Power Amplifier Measurements


Original
PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006-BD
2000 - 676.160

Abstract: x-band microwave fet x-band power amplifier
Text: TriQuint TGA8286-EPU is a GaAs monolithic amplifier designed for use as an X-band power amplifier . A 2.4mm , Product Data Sheet 8 - 10.5 GHz Power Amplifier TGA8286-EPU Key Features and Performance · · · · · · 8 to 10.5 GHz Frequency Range, X-band Two Stage 5-W HFET Power Amplifier 37 , possible level. These ratings apply to each individual FET . TriQuint Semiconductor Texas Phone: (972)994 , . EQUIVALENT SCHEMATIC FET 1 = 2.4mm HFET, 2 x 1200um HFETs FET 2 = 9.6mm HFET, 8 x 1200um HFETs TaN


Original
PDF TGA8286-EPU TGA8286-EPU effectivel00pF 676.160 x-band microwave fet x-band power amplifier
Supplyframe Tracking Pixel