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Part Manufacturer Description Datasheet Download Buy Part
LTC6990HS6#PBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: -40°C to 125°C
LTC6990IS6#PBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC6990CS6#TRMPBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C
LTC6990CS6#TRPBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C
LTC6990MPS6#PBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: -55°C to 125°C
LTC6990HS6#TRMPBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: -40°C to 125°C

Fujitsu Silicon Darlington Transistor Array Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
SS510

Abstract: transistor 2 Amp 3 volt transistor A11 220 fujitsu transistor Fujitsu Silicon Darlington Transistor Array 2SD560 npn 8 transistor array 3349DC darlington array RM-60
Text: FUJITWITICROELECTRONICS 37C D 1 374=171,2 GOaiflbM 2 FUJITSU 2SD560 MICROELECTRONICS il^lbl FUJITSU MICROELECTRONICS -3 7L 0186^ SILICON NPN EPITAXIAL * DARLINGTON TRANSISTOR 5 AMP, 100 VOLT DESCRIPTION The 2SD560 is a low cost Darlington array which is perfectly suited for increasing TTL levels to , dimensions. 3-3 FUJITSU MICROELECTRONICS 37C D 1 374^7^ DGDlflbS r 37^9762 FUJITSU "MICROELECTRONICS , Current Waveform" GÈ 1-44» 44+- •on 'stg 'f Ibi 'B2 3-4 FUJITSU MICROELECTRONICS 37C D â


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PDF 2SD560 2SD560 RM-60 mi311 TQ-220 SS510 transistor 2 Amp 3 volt transistor A11 220 fujitsu transistor Fujitsu Silicon Darlington Transistor Array npn 8 transistor array 3349DC darlington array RM-60
FT5753M

Abstract: FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M d5 transistor npn FT5755M FT5763M
Text: in inch (mm) FUJITSU PKQ No. RM47 3-6 Power Transistor Products Darlington Transistor , in ductive tu rn -o ff. The darlington transistor array series (F T 575 3M , F T 5754M , F T5755M , F , Power Transistor Products Darlington Transistor Arrays INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays , Transistor Products Darlington Transistor Arrays C IR C U IT A N D P IN A S S IG N M E N T 9 10


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PDF 12-pin FT5753M FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M d5 transistor npn FT5755M FT5763M
B-500 diode

Abstract: darlington buffer array B-500 MB15K Fujitsu Transistor Array fujitsu 42pin MB-15
Text: ITTSl) M I f. RDFl FC. TRONI CS 03C 00826 0 Y T-4'2-11-05 The Fujitsu B-500 (MB15K series) is an integrated circuit gate array fabricated with a fow power SchottkyTTL (Transistor-Transistor Logic) process. The array consists of 512 internal 2-input NAND gates, 60 input buffers, and 48 output , implementation of the metal interconnection routing, Fujitsu utilizes a unique Computer-Aided Design System (CAD , physical layout of the array , line routing, mask pattern data generation, and test programs as well as


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PDF B-500 MB15K J22833 B-500 diode darlington buffer array B-500 Fujitsu Transistor Array fujitsu 42pin MB-15
nand gate layout

Abstract: darlington buffer array B2000 High speed output buffer IC 5V 502-016
Text: MB 17K Low Power Schottky TTL c c_ The Fujitsu B-2000 (IV1B17K series) is an integrated circuit gate array fabricated with a low power Schottky T T L (Transistor-Transistor Logic) process. The array , interconnection routing, Fujitsu utilizes a unique Computer-Aided Design System (CAD) to interface customer specifications with the manufacturing function. This CAD software provides the physical layout of the array , line , output option ( Darlington , Open collector, 3-state, Bi-directional bus) Powerful drive capability (Low


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PDF B-2000 IV1B17K J22833 CA95051, D-6000 V2042-819C nand gate layout darlington buffer array B2000 High speed output buffer IC 5V 502-016
2006 - CS200A

Abstract: fujitsu transistor CS200 IEC61883 generic dvd player power supply wimax soc FCBGA728
Text: transistor characteristics. Fujitsu has more experience in manufacturing leading-edge technology products , channel improves transistor performance by approximately 15%. Fujitsu 's ultra-low-k NCS (nanoclustering , Winter 2006 The News on the Latest Semiconductor Technologies and Products from Fujitsu Microelectronics America, Inc. The Fujitsu WiMAX SoC Enjoys Strong Industry Acceptance Major broadband Wireless Access manufacturers are choosing the Fujitsu IEEE 802.16-2004 WiMAX-compliant SoC for their end-to-end


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PDF CORP-NL-21143-1/2006 CS200A fujitsu transistor CS200 IEC61883 generic dvd player power supply wimax soc FCBGA728
POLY BIT

Abstract: No abstract text available
Text: refers to Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu , , these products will be offered to customers of both AMD and Fujitsu . Continuity of Specifications , changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu , your local AMD or Fujitsu sales office for additional information about Spansion memory solutions , single stacked gate transistor . The gate structure of this transistor consists of a polysilicon control


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PDF su400 XXX-00-12/97 1628A POLY BIT
ti75b

Abstract: MB1540 MB1550 MB1520
Text: Resistor Array Area Capacitor Array Area Transistor Array Area i Bias Area Ground Capacitor Group (120 pF max) Resistor Array Area Capacitor Array Area Resistor Array Area Transistor Array Area , Sept. 1995 Edition 3.0b DATA SH EET FUJITSU MB1520/MB1530/MB1540/MB1550 SERIES Bi-CMOS LSI RF 1C SPECIFICATION ADVANCED SEMICUSTOM TECHNOLOGY OF SUPER PLL WITH RF SYSTEM ON LSI The Fujitsu , makes it possible to compose single chip silicon front ends for mobile communication systems. Due to the


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PDF MB1520/MB1530/MB1540/MB1550 MB1520/1530/1540/1550 ti75b MB1540 MB1550 MB1520
2001 - 0.18-um

Abstract: 0.35uM STI pMOS NAND GATE CS80A CS70DL CS70B CS100A CS-80 CG61 0.35Um
Text: fujitsu-fme.com FUJITSU MICROELECTRONICS EUROPE www.fujitsu www.fujitsu fme.com ANALOG FEATURES Transistor , CMOS PROCESS TECHNOLOGY 1 1 fujitsu-fme.com FUJITSU MICROELECTRONICS EUROPE www.fujitsu , Fujitsu-COT CS100 CS90DLS Fujitsu-ASIC CS100A/DL Fujitsu ASIC Fujitsu COT ITRS(`99 ) MPU 0.1 0.05 , Semiconductor 2 2 Calendar Year fujitsu-fme.com FUJITSU MICROELECTRONICS EUROPE www.fujitsu www.fujitsu , FUJITSU MICROELECTRONICS EUROPE www.fujitsu www.fujitsu fme.com TECHNOLOGY FEATURES (continued


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PDF CS70B CS70DL CS70DLS CS80DL CS80/CS80A CS90A CS100 CS90DLS CS100A/DL 0.18-um 0.35uM STI pMOS NAND GATE CS80A CS70B CS100A CS-80 CG61 0.35Um
Not Available

Abstract: No abstract text available
Text: Charge Pump Analog Analog Analog Analog □ • Analog Cell Capacitor array Capacitor Capacitor array array (3 pF X 3) (1 5 pF X (3 pF X 3) 5) Sub-bias Sub-bias Resistor array unit unit >s >s >s 2 2 2 (ti o V to Transistor array (ti o V Capacitor array to (ti o V to >s 2 Transistor array , FUJITSU SEMICONDUCTOR DATA SHEET DS06-70104-3E Semicustom Bi-CMOS ASTRO MASTER IV


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PDF DS06-70104-3E MB1570
Not Available

Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70103-1E Semicustom ASTRO MASTER III BIPOLAR , 0 0 0 0 0 0 0 0 0 0 0 0 y • Analog Cell Capacitor array section Capacitor array section Capacitor array section (15 pF X 5) (3 pF X 3) (3 pF X 3) Sub-bias section c o o Q ) to >s (ti o iñ to Q ) CC 2 Resistor array section T r a n s , amplifier and NPN transistor . The differential amplifier output uses an emitter-follower circuit. • RF


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PDF DS06-70103-1E MB54600 MB546xx 20-pin, FPT-20P-M03) 34-pin,
2008 - CMOS image sensor fingerprint circuit

Abstract: silicon fingerprint technology capacitive fingerprint sensor array 500-DPI Fujitsu MBF200 Fingerprint Control Device Circuit fingerprint sensor pixel array 20 pin image sensor
Text: 0.6") ­ 256 x 300 pixel array (50µM pitch) · Programmable gain adapts to wet/dry fingers · Small size , Durable: ­ ESD to 8kV (FCC-B/CE certified) ­ Silicon operating temperature: -20°C to +85°C ­ Hard , Power: ­ 3.3V ­ 20mA active, <200µA sleep, 20µA standby Description The Fujitsu MBF200 is a 500 , Fujitsu MBF200 provides a reliable, quick and user-friendly alternative to passwords, PIN's and other forms of user authentication. The Fujitsu MBF200 solid-state fingerprint sensor is a rugged, thin, low


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PDF MBF200 500-dpi, 20/sec 13/sec 10/sec CFR47 EN61000-4-2 80-pin CMOS image sensor fingerprint circuit silicon fingerprint technology capacitive fingerprint sensor array 500-DPI Fujitsu MBF200 Fingerprint Control Device Circuit fingerprint sensor pixel array 20 pin image sensor
2006 - bios phoenix TRUSTEDCORE

Abstract: MBF320 mbf200pfw-lp-g sweep fingerprint sensor biometric sensor circuit biometric biometric fingerprint capacitive MBF320PBT-GE1 Fingerprint sensor MBF320PBT
Text: Capacitor Array Active Circuits Silicon Substrate © Fujitsu Microelectronics America, Inc. 2006 10 , Biometric Pre-boot Authentication (PBA) Solution Fujitsu Microelectronics America, Inc. What , Boot © Fujitsu Microelectronics America, Inc. 2006 2 BMS-PPT-21206-8/2006 Providing PBA in a , on! Source: Phoenix © Fujitsu Microelectronics America, Inc. 2006 3 BMS-PPT-21206-8/2006 , and Mobile © Fujitsu Microelectronics America, Inc. 2006 4 BMS-PPT-21206-8/2006 Market


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PDF BMS-PPT-21206-8/2006 bios phoenix TRUSTEDCORE MBF320 mbf200pfw-lp-g sweep fingerprint sensor biometric sensor circuit biometric biometric fingerprint capacitive MBF320PBT-GE1 Fingerprint sensor MBF320PBT
MB60K

Abstract: C-20Q0 MIKROELEKTRONIK Frankfurt
Text: MB60K Silicon Gate CMOS LSI The Fujitsu C-20Q0 (MB60K Series) is a highly integrated, low power, gate array LSI fabricated with silicon gate CMOS technology! The array consists of 2000 internal basic , error-free implementation of the metal interconnection routing, Fujitsu utilizes a unique Computer-Aided , provides the physical layout of the array , line routing, mask pattern data generation, and test programs as , FUJITSU 374976¿ hUJi fSU MICROELECTRONICS 29C 01566 D T-42-11-09 i/o CELL Family o— D OUT O


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PDF MB60K C-20Q0 J22833 CA95051, D-600Ã C-20Q0 MIKROELEKTRONIK Frankfurt
TTL ICs Integrated Circuits

Abstract: UDN-7180 UDN7180 UDN7180A HIGH-VOLTAGE MONOLITHIC IC ALPHANUMERIC GAS PLASMA DISPLAY alphanumeric pinball panaplex COMMON-CATHODE ALPHA NUMERIC DISPLAY Plasma lamp Driver IC
Text: segment currents of up to 14 mA. The transistor switch with current-limiting resistor scheme used in these , obviously not a concern. A combination of high-current, high-voltage Darlington drivers is shown in Figure 4 , INTERFACE Plasma displays, such as those manufactured by National Electron ics/NCR (USA) and NEC or Fujitsu , plasma display interface. The ULN7003A Darlington power driver is rated at 150 V. It is able to handle , Darlington drivers replace more than 400 discrete components. The cost and space savings in such a machine


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PDF UHP500) 16-character, 16-segment TTL ICs Integrated Circuits UDN-7180 UDN7180 UDN7180A HIGH-VOLTAGE MONOLITHIC IC ALPHANUMERIC GAS PLASMA DISPLAY alphanumeric pinball panaplex COMMON-CATHODE ALPHA NUMERIC DISPLAY Plasma lamp Driver IC
1996 - CE61

Abstract: computer networking
Text: Fujitsu Microelectronics' New 0.35 Micron Microembedded Cell Array Series Offers Cost-effective , solutions. Fujitsu 's new CE61 microembedded cell array Series provides as many as 2,026,000 available , Featured in Eight-member Series SAN JOSE, Calif., Aug. 12, 1996 - Fujitsu Microelectronics, Inc. (FMI) today introduced its high-density, 0.35 micron CMOS CE61 microembedded cell array Series, developed to , designs that have been completed," said Zafar Malik, director of FMI's ASIC Business Unit. "The silicon


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2009 - efuse OTP

Abstract: schematic diagram of bluetooth receiver FUJITSU single mosfet FUJITSU mosfet efuse rf sampler bluetooth transceiver MOSFET 90nm
Text: RFCMOS Case Study: Orca Systems' 1st-pass Functional Silicon Success with Fujitsu CMOS 90nm , silicon will match simulation results. The results we got with Fujitsu 's 90nm PDK are close to simulated , Fujitsu Microelectronics Limited Orca Systems' 1st-pass Functional Silicon Success with Fujitsu CMOS , tape-out their first-pass functional silicon . Fujitsu 's PDK includes a collection of verified data files , Fujitsu Microelectronics Limited Orca Systems' 1st-pass Functional Silicon Success with Fujitsu CMOS


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PDF SMS-CS-21356-12/2009. efuse OTP schematic diagram of bluetooth receiver FUJITSU single mosfet FUJITSU mosfet efuse rf sampler bluetooth transceiver MOSFET 90nm
Not Available

Abstract: No abstract text available
Text: De J 374T7bS ODDOñHñ 4 T-42-11-09 M B 6 0 K Silicon Gate C M O S L S I T h e Fujitsu C -1500 (M B 6 0 K Series) is a highly integrated, low power, gate array L S I fabricated w ith silicon gate C M O S technology. T h e array consists of 2 000 internal basic unit cells (2 input N A N D , entation o f the metal interconnection routing, Fujitsu utilizes a unique C om pu ter-A ided Design , D software provides the physical ■ilû layout o f the array , line routing, m ask pattern


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PDF 374T7bS T-42-11-09 00B5c J22833
1996 - cohesive

Abstract: No abstract text available
Text: Fujitsu offers the widest range of multichip module (MCM) and multichip package (MCP) technology , . THE FUJITSU ADVANTAGE Vast design and manufacturing capabilities and locations throughout the world , array of solutions Features of MCM-L Technology The MCM-L substrate and your PWB share the same , requirements. Improved ( silicon to substrate) TCE match with good thermal conduction media. Features of , especially for array and fine pitch devices. Your system cost is reduced by utilizing substantially smaller


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Not Available

Abstract: No abstract text available
Text: Figure 4. Analog Cell Layout Resistor Array Area Capacitor Array Area Transistor Array Area Bias , Resistor Array Area Transistor Array Area Resistor Array Area 3 MB1520, MB1530, and MB1540 , .K P 7 19 92 FUJITSU August 1992 Edition 2.0A_ . DATASHEET MB1520, MB1530, and MB1540 Series ASTRO MASTER LSICs ™ The Fujitsu MB1520, MB1530, and , extended periods may affect device reliability._ ©1992 by FUJITSU LIMITED


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PDF MB1520, MB1530, MB1540
2001 - M29W160

Abstract: SST39VF160 SST39VF200A SST39VF400A SST39VF800A Am29LV160B
Text: product offerings from AMD, ST Microelectronics, Fujitsu , Intel and Atmel. It describes hardware and , progress and reset the internal state machine to read array data. The only difference is that in SST , ©2001 Silicon Storage Technology, Inc. S72006-02-000 10/01 217 11 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology , operation in progress and reset the internal state machine to read array data. The only difference is that


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PDF SST39VF160 28F160B3/C3 AT49BV1604 SST39VF800A, SST39VF400A, SST39VF200A S72006-02-000 M29W160 SST39VF400A SST39VF800A Am29LV160B
LSI CMOS GATE ARRAY

Abstract: C-8000VH MB660 T-42-11-09
Text: MB 66000VH The Fujitsu C-8000VH (MB66000VH Series) is a very highly integrated, low power and high speed, gate array LSI fabricated with silicon gate CMOS technology. The array consists of 8000 , error-free implementation of the metal interconnection routing, Fujitsu utilizes a unique Computer-Aided , provides the physical layout of the array , line routing, mask pattern data generation, and test programs as , » Pin array plug-in type 135/179 pin package * Very high speed (2.5 ns/gate typ) » Low power


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PDF 66000VH C-8000VH MB66000VH LSI CMOS GATE ARRAY C-8000VH MB660 T-42-11-09
2005 - M29W160

Abstract: SST39VF160 SST39VF200A SST39VF400A SST39VF800A
Text: product offerings from AMD, ST Microelectronics, Fujitsu , Intel and Atmel. It describes hardware and , F01.0 FIGURE 1: RECOMMENDED POWER-UP/DOWN WAVEFORM ©2005 Silicon Storage Technology, Inc. S72006-04-000 10/05 11 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. Product names used in this , internal state machine to read array data. The only difference is that in SST's case, an Erase or Program


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PDF SST39VF160 S72006-04-000 M29W160 SST39VF200A SST39VF400A SST39VF800A
MBM27C256-25

Abstract: M27C MBM27C256
Text: MOS Memories ff¡ £ 7 FUJITSU M B M 27C 256-25, M B M 27C 256-30, M B M 27C 256-45 CMOS 32,768 X 8-Bit UV Erasable and Electrically Programmable Read Only Memory Description The Fujitsu , MBM27C256 is fabricated using CMOS double polysilicon gate technology with single transistor stacked gate , dicate a program failure. Upon completion of programming of the entire device, a final array verification (all locations) is re quired. All Fujitsu devices will typically require only two 1 millisecond pulses


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PDF MBM27C256 144-bits 28-pin 32-pad MBM27C256. MBM27C256-25 M27C
2SC2429

Abstract: TRANSISTOR 0835 fujitsu RET transistors
Text:  FUJITSU SILICON HIGH SPEEO POWER TRANSISTORS 2SC2429 SILICON NPN RING EMITTER TRANSISTOR (RET) The 2SC2429 is a silicon NPN planer general purpose, high power switching transistor fabricated with Fujitsu 's unique Ring , Range Tstg -65~+175 °c Fujitsu 2SC2429 SILICON , Oscilloscope FUJITSU SILICON MGH SPEED POWER TRANSISTORS OUTLINE DIMENSION JEDEC TO—3 0.835 0M AX. CO


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PDF 2SC2429 2SC2429 TRANSISTOR 0835 fujitsu RET transistors
full adder circuit using nor gates

Abstract: M780 ecl eor
Text: processing used Fujitsu 's E30000VH array utilizes advanced technology to produce an array with high I/O , FUJITSU LIMITED AND FUJITSU MICROELECTRONICS, INC. Í E30000VH ECL Gate Array Fujitsu , Fujitsu Microelectronics, Inc. E30000VH ECL Gate Array ECL DC CHARACTERISTICS (10KH Level , Array Fujitsu Microelectronics, Inc. ECL AC Characteristics Recommended operating conditions , AC Characteristics Measurement Waveform Fujitsu Microelectronics, Inc. E30000VH ECL Gate Array


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PDF E30000VH 441-pin E-30000VH LD10L LD10H full adder circuit using nor gates M780 ecl eor
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