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Part Manufacturer Description Datasheet Download Buy Part
LT1528CQ Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#TR Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CT Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#TRPBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CT#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C

Fujitsu GaAs FET application note Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - fujitsu gaas fet

Abstract: FSX56LP FSX56 Fujitsu GaAs FET application note
Text: FSX56LP General Purpose GaAs FET FEATURES · Low Phase Noise: f = -95 dBc/Hz (Typ.) (10KHz offset) · Small Size Package: LP package for SMT application · Tape and Reel available · High Output Power , is a low phase noise GaAs FET with an N-channel Schottky gate that is designed for oscillator applications in C-X band. Fujitsu 's stringent Quality Assurance Program assures the highest reliability and , db dBc/Hz 10KHz offset Edition 1.1 July 1999 1 FSX56LP General Purpose GaAs FET Case


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PDF FSX56LP 10KHz 15dBm 10GHz FSX56LP 65mmafety, FCSI0598M200 fujitsu gaas fet FSX56 Fujitsu GaAs FET application note
FSX56LP

Abstract: fujitsu gaas fet Fujitsu GaAs FET application note 10GHz oscillator FSX56
Text: FSX56LP - General Purpose GaAs FET FEATURES _ • High Output Power: P1dB = 15dBm (Typ , .) (10KHz offset) • Small Size Package: LP package for SMT application • Tape and Reel available DESCRIPTION The FSX56LP is a low phase noise GaAs FET with an N-channel Schottky gate that is designed for oscillator applications in C-X band. Fujitsu 's stringent Quality Assurance Program assures the highest , GaAs FET Case Style "LP" Metal-Ceramic Package Gold Plated Leads 1. Gate 2. Source 3. Drain 4


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PDF FSX56LP 15dBm 10GHz 10KHz FSX56LP FCSI0598M200 fujitsu gaas fet Fujitsu GaAs FET application note 10GHz oscillator FSX56
FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES C. EQUIVALENT CIRCUIT GaAs FET CHIP LUMPED ELEMENT MODEL Note : Equivalent circuit , APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 , \ Figure 111-3. Connection of the Bias Supply to the GaAs FET 's _ FUJITSU 335 , GaAs FET and HEMT devices are sensitive to electrostatic discharge (ESD). It is very important that the , ) SHIPPING CONTAINER All GaAs FET and HEMT chips are shipped in a "waffle pack" style shipping container


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GSC371BAL2000

Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 RO3010 fujitsu rf power amplifier l band soshin
Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt , 1930-1990MHz PCS band using the Fujitsu FLL400IP-2 GaAs FET is presented. Full circuit design details as well as the measured results for both Class A and AB operation are provided. FUJITSU APPLICATION NOTE , circuit elements of the 40W amplifier are the Fujitsu FLL400IP-2, 40W power GaAs FET , two SHOSHIN balun , ACP performance are shown, Figures 7a and 7b. FUJITSU APPLICATION NOTE - No 002 Gate Bias


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PDF 1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 RO3010 fujitsu rf power amplifier l band soshin
2003 - FLU10

Abstract: fujitsu flu fujitsu gaas fet L-band pae100
Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High , FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power , FLU10ZM L-Band Medium & High Power GaAs FET S-PARAMETER +50 j 10 25 50 +10j 1.0 +2 50j , Power GaAs FET OUTPUT POWER & DRAIN CURRENT vs. INPUT POWER with a wide band tuning condition. @ VDS =


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PDF FLU10ZM FLU10ZM FCSI0202M200 FLU10 fujitsu flu fujitsu gaas fet L-band pae100
2003 - IM320

Abstract: fujitsu flu fujitsu gaas fet L-band
Text: L-Band Medium & High Power GaAs FET For further information please contact : FUJITSU COMPOUND , FLU17ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm(typ , The FLU17ZM is a GaAs FET designed for base station and CPE applications. This is a new product , 2003 1 FLU17ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Output Power , POWER & POWER ADDED EFFICIENCY vs. INPUT POWER FLU17ZM L-Band Medium & High Power GaAs FET


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PDF FLU17ZM FLU17ZM FCSI0202M200 IM320 fujitsu flu fujitsu gaas fet L-band
fujitsu gaas fet

Abstract: FSU01LG
Text: . Edition 1.2 July 1999 G.C.P.: Gain Compression Point FUJITSU FSU01LG General Purpose GaAs FET POWER , .687 -50.3 22.9 .681 -52.8 20.9 .674 -55.3 19.4 .668 -58.0 FUJITSU FSU01LG General Purpose GaAs FET , FUJITSU FSU01LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 , FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm (Typ.) â , DESCRIPTION The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a


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PDF FSU01LG 190dB 12GHz FSU01LG FCSI0598M200 fujitsu gaas fet
CD 294

Abstract: FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
Text: .: Gain Compression Point - fujitsu July 1999 ß FLC257MH-6 C-Band Power GaAs FET POWER DERATING CURVE , .: Gain Compression Point Edition 1.1 July 1999 fujitsu FLC257MH-6 C-Band Power GaAs FET POWER , 8000 .814 161.6 .810 -16.0 .025 -44.4 .825 160.9 fujitsu FLC257MH-6 C-Band Power GaAs FET Case , Compression Point Edition 1.1 July 1999 fujitsu FLC257MH-6 C-Band Power GaAs FET POWER DERATING CURVE , .828 134.3 .569 -9.3 .023 -40.1 .846 143.4 fujitsu FLC257MH-8 C-Band Power GaAs FET Case Style


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PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
1999 - Not Available

Abstract: No abstract text available
Text: FLL310IQ-3A L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , %. DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employs a push-pull design which offers excellent , Channel Temperature Rise CASE STYLE: IQ Note 1: Tested in Fujitsu Test Fixture containing external , .: Gain Compression Point 1 FLL310IQ-3A L-Band Medium & High Power GaAs FET OUTPUT POWER & hadd , ) 2 IDS(RF) (A) hadd (%) FLL310IQ-3A L-Band Medium & High Power GaAs FET OUTPUT POWER vs


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PDF FLL310IQ-3A FLL310IQ-3A FCSI0599M200
1999 - fujitsu gaas fet

Abstract: FLL310IQ-3A
Text: FLL310IQ-3A L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull , PAE: 40%. DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employs a push-pull design which , .: Single Carrier Level Note 1: Tested in Fujitsu Test Fixture containing external matching Note 2: Tch , -3A L-Band Medium & High Power GaAs FET OUTPUT POWER & add vs. INPUT POWER POWER DERATING CURVE 120 , & High Power GaAs FET OUTPUT POWER vs. IM3 -15 -20 VDS = 10V IDS = 7.0A f = 5 MHz 2.5GHz


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PDF FLL310IQ-3A FLL310IQ-3A FCSI0599M200 fujitsu gaas fet
2003 - fujitsu flu

Abstract: fujitsu gaas fet L-band
Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm(typ.) High , FLU35ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU35ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE OUTPUT POWER , ] 25 FLU35ZM L-Band Medium & High Power GaAs FET S-PARAMETER +90° +50 j +2 5j +100 j 10 , 0.77 156.46 0.78 151.30 S 12 S 21 FLU35ZM L-Band Medium & High Power GaAs FET OUTPUT POWER


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PDF FLU35ZM FLU35ZM FCSI0202M200 fujitsu flu fujitsu gaas fet L-band
1998 - FSU02LG

Abstract: v 4836 fujitsu GHz gaas fet
Text: FSU02LG General Purpose GaAs FET FEATURES · High Output Power: P1dB = 23.0dBm (Typ.)@2GHz · , DESCRIPTION The FSU02LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a , x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs , FSU02LG General Purpose GaAs FET ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT NOISE FIGURE vs , S-Parameters, click here 3 FSU02LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Package


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PDF FSU02LG FSU02LG FCSI0598M200 v 4836 fujitsu GHz gaas fet
fujitsu gaas fet

Abstract: FSU02LG FUJITSU RF 053
Text: failure shall be 100% retested. Edition 1.2 July 1999 FUJITSU FSU02LG General Purpose GaAs FET , FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm (Typ.)@2GHz , Available DESCRIPTION The FSU02LG is a high performance, low noise, GaAs FET designed for PCS/PCN , Note : Mounted on Al203 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the , General Purpose GaAs FET S-PARAMETERS VDS =6V' 'DS = 80mA FREQUENCY S11 S21 S12 S22 (GHZ) MAG ANG MAG


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PDF FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet FUJITSU RF 053
1999 - Not Available

Abstract: No abstract text available
Text: FLL310IQ-3A L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull , PAE: 40%. DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employs a push-pull design which , Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , S.C.L.: Single Carrier Level Note 1: Tested in Fujitsu Test Fixture containing external matching , FLL310IQ-3A L-Band Medium & High Power GaAs FET OUTPUT POWER & ηadd vs. INPUT POWER POWER DERATING


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PDF FLL310IQ-3A FLL310IQ-3A FCSI0599M200
FUJITSU MICROWAVE TRANSISTOR

Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note high power fet amplifier schematic 4433B mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES · Targeted WCDMA ACPR at 6 W average · , MMDS band using the Fujitsu FLL600IQ-3 GaAs FET device is presented. Full circuit design details as , amplifier design is provided without example. FUJITSU APPLICATION NOTE - No 007 FLL600IQ-3 Device , two 30-W Au gate power GaAs FET chips that are independently configured within the Fujitsu IQ


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PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note high power fet amplifier schematic 4433B mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
1998 - fujitsu gaas fet

Abstract: fujitsu GHz gaas fet
Text: FSU02LG General Purpose GaAs FET FEATURES · High Output Power: P1dB = 23.0dBm (Typ.)@2GHz · High , The FSU02LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a driver , Point Edition 1.2 July 1999 1 FSU02LG General Purpose GaAs FET ASSOCIATED GAIN vs , ) 2 FSU02LG General Purpose GaAs FET +j50 +j100 +j25 2.0 3.0 S11 S22 +90¡ S21 S12 , 3 FSU02LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5


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PDF FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet fujitsu GHz gaas fet
2004 - fujitsu gaas fet

Abstract: FLL410IK-3C fujitsu GHz gaas fet Fujitsu Quantum Devices fujitsu gaas fet L-band ED-4701
Text: High Power GaAs FET For further information please contact : CAUTION FUJITSU COMPOUND , FLL410IK-3C L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain , DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 ­ 2.7 , GaAs FET VDS=12V, IDS(DC)=3A 48 48 Pin=36dBm 46 80 Output Power [dBm] 42 40 , FLL410IK-3C L-Band High Power GaAs FET S-PARAMETER +90° +50j +100j +25j +250j +10j


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PDF FLL410IK-3C FLL410IK-3C fujitsu gaas fet fujitsu GHz gaas fet Fujitsu Quantum Devices fujitsu gaas fet L-band ED-4701
2001 - FLL810IQ-3C

Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration , . Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull , Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , 1.1 °C/W FLL810IQ-3C L-Band High Power GaAs FET IMD & IDS(RF) vs. TOTAL OUTPUT POWER , IDS = 5A FLL810IQ-3C L-Band High Power GaAs FET FREQUENCY (MHZ) 1500 1600 1700 1800 1900


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PDF FLL810IQ-3C FLL810IQ-3C FCSI05019M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
2001 - FLL810IQ-4C

Abstract: No abstract text available
Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration , . Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull , High Power GaAs FET OUTPUT POWER vs. FREQUENCY IMD & IDS(RF) vs. TOTAL OUTPUT POWER -24 50 , ) VDS = 12V, IDS(DC) = 5A FLL810IQ-4C L-Band High Power GaAs FET FREQUENCY (MHZ) 2500 2600 , designs. Download S-Parameters, click here 3 FLL810IQ-4C L-Band High Power GaAs FET Case Style


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PDF FLL810IQ-4C FLL810IQ-4C FCSI05019M200
Not Available

Abstract: No abstract text available
Text: amplifier designs. Fujrrsu FLL1200IU-3 L-Band High Power GaAs FET FUJITSU COMPOUND SEMICONDUCTOR , Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W , . DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of , Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , . Edition 1.3 July 1999 1 Fujrrsu FLL1200IU-3 L-Band High Power GaAs FET OUTPUT POWER & Tiadd


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PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200
fujitsu x band amplifiers

Abstract: FSX017LG Q1150 fujitsu gaas fet
Text: shall be 100% retested. O^ Edition 1.2 July 1999 FUJITSU FSX017LG General Purpose GaAs FET POWER , — FSX017L G - General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm , purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic , » 30 20 10 TD T3 CO P" 01 234 56789 10 11 Fujfrsu FSX017LG General Purpose GaAs FET +j10 , General Purpose GaAs FET Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 (0.02) S'? Gold


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PDF FSX017L FSX017LG 12GHz. FCSI0598M200 fujitsu x band amplifiers Q1150 fujitsu gaas fet
1998 - FSX017X

Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES · Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz · High , purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic , ) G.C.P.: Gain Compression Point Edition 1.1 July 1999 1 FSX017X GaAs FET & HEMT Chips POWER , Input Power (dBm) Drain-Source Voltage (V) 2 FSX017X GaAs FET & HEMT Chips S-PARAMETERS VDS , Au wire) Source n=4 (0.2mm length, 25µm Dia Au wire) 3 FSX017X GaAs FET & HEMT Chips CHIP


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PDF FSX017X FSX017X 12GHz. FCSI0598M200
fujitsu hemt

Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips
Text: )=(2/3) Edition 1.1 July 1999 G.C.P.: Gain Compression Point FUJITSU FSX017X GaAs FET & HEMT , FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm(Typ.)@8.0GHz â , purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic , 4 5 6 7 8 Drain-Source Voltage (V) Fujfrsu FSX017X GaAs FET & HEMT Chips FREQUENCY S11 (MHZ , FSX017X GaAs FET & HEMT Chips CHIP OUTLINE Die Thickness: 100±20nm For further information please


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PDF FSX017X FSX017X 12GHz. FCSI0598M200 fujitsu hemt fujitsu gaas fet GaAs FET HEMT Chips
FLC157XP

Abstract: C-Band Power GaAs FET HEMT Chips fujitsu hemt fujitsu gaas fet
Text: environment for optimum performance and reliability. Edition 1.3 July 1999 FUJITSU FLC157XP GaAs FET & , wire) FUJITSU FLC157XP GaAs FET & HEMT Chips CHIP OUTLINE For further information please contact , €¢ High PAE: r^ = 29.5%(Typ.) • Proven Reliability DESCRIPTION The FLC157XP chip is a power GaAs FET , reliability and consistent performance. FLC157XP GaAs FET & HEMT Chips ABSOLUTE MAXIMUM RATING (Ambient , GaAs FET & HEMT Chips S-PARAMETERS EQUENCY (MHZ) MAG S11 ANG VDS = S21 MAG 10V, IDS ANG = 400mA S12


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PDF FLC157XP FLC157XP FCSI0598M200 C-Band Power GaAs FET HEMT Chips fujitsu hemt fujitsu gaas fet
1998 - 1084 fet

Abstract: fujitsu gaas fet fujitsu GHz gaas fet
Text: FSU02LG General Purpose GaAs FET FEATURES · High Output Power: P1dB = 23.0dBm (Typ.)@2GHz · , DESCRIPTION The FSU02LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a , x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs , FSU02LG General Purpose GaAs FET ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT NOISE FIGURE vs , FSU02LG General Purpose GaAs FET Case Style "LP" Metal-Ceramic Package 4.78±0.5 1.78±0.15 1.5±0.3


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PDF FSU02LG FSU02LG FCSI0598M200 1084 fet fujitsu gaas fet fujitsu GHz gaas fet
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