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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

Field Effect Transistors Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS MAXIMUM , 3N209-3N210 144 Market Street Kenilworth NJ 07033 USA N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS , DUAL GATE MOS FIELD EFFECT TRANSISTORS phone +1.908.245-7200 fax +1.908.245-0555 , GATE MOS FIELD EFFECT TRANSISTORS Dim A B C D E F G H J K L M N P TO-72 Inches , . 20120705 mAdc DIGITRON SEMICONDUCTORS 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT


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PDF 3N209-3N210 3N209 3N210 MIL-PRF-19500,
Not Available

Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage , DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS ELECTRICAL CHARACTERISTICS (TA = , NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS phone +1.908.245-7200 fax +1.908.245-0555 , MOS FIELD EFFECT TRANSISTORS TO-72 Dim A B C D E F G H J K L M N P 144 Market , Street Kenilworth NJ 07033 USA N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT


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PDF MFE211 MFE212
matched pair JFET

Abstract: N CHANNEL jfet Low Noise Audio Amplifier jfet differential transistor jfet having voltage gain 741 op-amp transistor jfet 741 opamp field effect transistors opamp 741 jfet idss 10 vp -6
Text: Junction Field Effect Transistors (JFETs) The Junction Field Effect Transistor (JFET) exhibits , I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect Transistors , N I C S An introduction to Junction Field Effect Transistors (JFETs) Figure 6 ­ JFET constant , P R E C I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect , equivalent load impedance R S = the value of the source resistor RD Vo Vi RG The effect of the


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IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Text: ODOS^ab 0 LOW POWER FIELD EFFECT TRANSISTORS Devices, Inc Type Number Case Style (TO-) Avol Min V/mV , FIELD EFFECT TRANSISTORS Type Number Case Style (TO-) Geometry •BVDgo or BVgss Min (V) Ciss Max (pF , ¿1-ZS TS l)E|fl3böhDE OODa^SÖ 4 I ."ifSw?,™., ^sà êiitram LOW POWER FIELD EFFECT TRANSISTORS , □□□aT2ci b J" LOW POWER FIELD EFFECT TRANSISTORS NIHIL Type Number Case Style (TO-) Geometry , 0 29 30 D T- DE I 03hflbD2 OOGETBQ E ■=35 LOW POWER FIELD EFFECT TRANSISTORS Devices, Inc


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PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
1999 - Application Notes

Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Text: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors , technology lead to the types in use today. Field effect transistors include the Junction FET (JFET) and the , Insulated Gate FET. All field effect transistors are majority carrier devices. This means that current is , PM Page H-3 H-3 01/99 Junction Field Effect Transistors InterFET Application Notes , Book Company, New York, 1972 2. Sevin, L.J.: Field Effect Transistors , McGraw Hill Book Co., New


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solitron transistors

Abstract: Solitron Transistor U/25/20/TN26/15/850/solitron transistors
Text: chips for MOS and Junction Field Effect Transistors . Working with the most sophisticated equipment , of 10,000, or reverse breakdown voltages of 1,500 volts. B) MOS AND JUNCTION FIELD EFFECT TRANSISTORS (See Section E) Solitron's manufacturing processes for MOS and Junction Field Effect Transistor chips , FIELD EFFECT TRANSISTORS 1. CHIP MOUNTING RECOMMENDATIONS (See Section E) Eutectic alloy chip mounting , field . BASIC CHARACTERISTICS A) POWER TRANSISTORS AND PLANAR DIODES Solitron's manufacturing processes


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siemens datenbuch

Abstract: No abstract text available
Text: Terms and Definitions Power Semiconductors, Letter Symbols Bipolar Transistors , Terms and Definitions Field Effect Transistors , Terms and Definitions Semiconductor Devices, Symbols, General Semiconductor , Field Effect Transistors T2 IEC 747 DIN IEC 747 T7 T8 Zuverlässigkeit Reliability DIN 41 794 DIN , General Remarks on Data Sheet Details Data Sheet Details, Power Transistors Data Sheet Details, Switching Transistors Test Procedures, Transistors Test Procedures, Diodes Test Procedures, Thermal Resistance General


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siemens dioden

Abstract: Transistor Datenbuch Siemens Halbleiterbauelemente A66762-A4013-A58 dioden siemens
Text: Bipolar Transistors , Terms and Definitions Field Effect Transistors , Terms and Definitions Semiconductor , Procedures Diodes Bipolar Switching Transistors Field Effect Transistors T2 IEC 747 DIN IEC 747 T7 T8 , , Power Transistors Data Sheet Details, Switching Transistors Test Procedures, Transistors Test Procedures , Dioden Tests Testmethoden, z.B. Methode 3015.6 für ESD 1 > Ausfallkriterien ESD Transistors Diodes Tests


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2010 - solar regulator

Abstract: high power FET Transistor for ups fet 1412 ups high power FET Transistor transistor a 1413 ahr transistor SOLAR TRANSISTOR RSS210 fet a 1412 solar power plant
Text: voltage-free contacts 8 field effect transistors * 0 D2 W MIO 3 900 8 0-20mA 0 4 100 Hz , 4-16 field effect transistors * 0 0 4 1 x 1 KHz, 3 x 100 Hz 4 100 Hz *Transistor , , Multiple Inputs & Outputs 4 voltage-free contacts 1 field effect transistor* 6 0-20mA 0


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PDF RS232/RS485 RS232 RS485 solar regulator high power FET Transistor for ups fet 1412 ups high power FET Transistor transistor a 1413 ahr transistor SOLAR TRANSISTOR RSS210 fet a 1412 solar power plant
2000 - FQB12P20TM

Abstract: No abstract text available
Text: Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild , Memory e-mail this datasheet Dotted line space Distributor and field sales Optoelectronics [Erepresentatives Markets and mail] These P-Channel enhancement mode power applications Dotted line field effect transistors are produced using This pagePrint version Quality and reliability New products Fairchild , [Erepresentatives Markets and mail] These P-Channel enhancement mode power applications Dotted line field effect


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PDF FQB12P20 FQI12P20 -200V, FQB12P20TM O-263
2000 - Not Available

Abstract: No abstract text available
Text: Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild , mode power applications Dotted line field effect transistors are produced using This page Quality and , Memory e-mail this datasheet Dotted line space Distributor and field sales Optoelectronics [Erepresentatives Markets and mail] These P-Channel enhancement mode power applications Dotted line field effect transistors are produced using This page Quality and reliability New products Fairchild's proprietary, planar


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PDF FQB2P25 FQI2P25 -250V, FQI2P25TU O-262
2000 - Not Available

Abstract: No abstract text available
Text: Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild , Optoelectronics Markets and These N-Channel enhancement mode power applications field effect transistors are , power applications field effect transistors are produced using New products Fairchild's proprietary , Dotted line Distributor and field sales representatives Dotted line Quality and reliability Dotted line , Product Change Notices (PCNs) Dotted line Support Dotted line Distributor and field sales representatives


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PDF FQB2N80 FQI2N80 FQB2N80TM O-263
3n211

Abstract: 3N211S 3n21 MOS 4490 3n212 3n213 dual-gate
Text: TYPES 3N2H, 3N212, 3N213 N-CHANNEL DUAL-GATE DEPLETION-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS , DEPLETION TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS *3N211 operating characteristics at 25°C free-air , N-CHANNEL DUAL-GATE DEPLETION-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS PARAMETER MEASUREMENT , 79222 TYPES 3N21! 3N212, 3N213 N-CHANNEL DUAL-GATE DEPLETION-TYPE INSUIATED-GATE FIELD EFFECT , TRANSISTORS Monolithic Gate-Protection Diodes Low Crss · · 0.05 pF Max High |yfsl. . . 30,000 mmhos Typ for


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PDF 3N212, 3N213 3N211 3N212 3N211S 3n21 MOS 4490 dual-gate
Not Available

Abstract: No abstract text available
Text: include: Bridge Rectifiers Chips Current Limiting Diodes Field Effect Transistors Germanium Diodes Power Transistors Rectifiers Silicon Diodes Small Signal Transistors Thyristors Zener Diodes P rin te d o n te c


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MICROWAVE ASSOCIATES

Abstract: 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
Text: MA4F001 Series Gallium Arsenide Field Effect Transistors Description The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate , Gallium Arsenide IC Grade Substrates Gallium Arsenide Low Resistivity Substrates Gallium Arsenide Field Effect Transitors (MA-4F001 Series) Gallium Arsenide Field Effect Transistors (MA-4F004 Series) Low Noise GaAs Field Effect Transistors (MA-4F600 Series) Gallium Arsenide Power FET (MA-4F200 Series) Gallium


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PDF MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
2000 - Not Available

Abstract: No abstract text available
Text: applications Dotted line field effect transistors are produced using This pagePrint version Quality and , line field effect transistors are produced using This pagePrint version Quality and reliability New , Non-Volatile Support General description Memory e-mail this datasheet Dotted line space Distributor and field , Support General description Memory e-mail this datasheet Dotted line space Distributor and field sales


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PDF FQI19N20LTU O-262
2000 - gaas fet marking B

Abstract: marking K gaas fet gaas fet marking a marking A 04dB murata devices marking
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS SMALL SIGNAL FET'S XMFS Series FEATURES I Low noise figure I Excellent associated gain APPLICATIONS I Low noise applications up to c-band 6GHz I WLAN, WLL, DBS tuner/converter, GPS I Low noise amplifiers or oscillator circuits DIMENSIONS: mm XMFS2-M1 XMFS3-M1 1.5 B 1.9 2.9 A 0.3 0.8 Pin Source Gate Source Drain B k A A k 1.9 0.65 0.4 0.65 0.4 1.5 B


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PDF 100mA 0-35-E, CG01-J gaas fet marking B marking K gaas fet gaas fet marking a marking A 04dB murata devices marking
2000 - gaas fet marking B

Abstract: part marking id gaas fet marking a marking .A Frequency Devices marking A marking K gaas fet Field Effect Transistors
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS SMALL SIGNAL FET'S FEATURES s Low noise figure s Excellent associated gain XMFS Series APPLICATIONS s Low noise applications up to c-band 6GHz s WLAN, WLL, DBS tuner/converter, GPS s Low noise amplifiers or oscillator circuits DIMENSIONS: mm XMFS2-M1 0.4 1.5 0.65 XMFS3-M1 0.4 1.5 0.65 1.9 A A k B 2.9 1.9 A B k B 2.9 HIGH FREQUENCY DEVICES 0.3 0.8 Pin Source Gate


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PDF 100mA 0-35-E, CG01-H gaas fet marking B part marking id gaas fet marking a marking .A Frequency Devices marking A marking K gaas fet Field Effect Transistors
TIS69 equivalent

Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Text: choice of field effect transistors . This broad selection is your best assurance of pin-pomting the , choice. This range of field effect transistors is but a portion of the industries' broadest range of , Publications 22 T.l. Field Effect Transistors 33 Selection Guide (N Channel) 34 Selection , . F.E.T. RATINGS 9 Fig. 2 F.E.T. LEAKAGE CURRENTS The classification of field effect transistors , (1) Field Effect Transistors Author Leonce J. Sevin Pub.: McGraw-Hill (2) Field Effect


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PDF 2N5045, 2N5046, 2N5047 TIS69 equivalent 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
BF1109 spice

Abstract: bf1105 spice bf1105 BF1109
Text: Philips Semiconductors Small-signal Field effect Transistors Dear Customer, Welcome to the latest edition of the SC 07 data handbook "Small-signal Field-effect Transistors ". Preface It contains data on our extensive range of JF E T s and Dual Gate M O SFETs, while information on our vertical D -M O SFETs can now be found in data handbook SC13B. Several new devices have been introduced since the last edition of SC07, including BF1105, R, W R a n d BF1109, R, WR. These Dual Gate M O S FE T s


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PDF SC13B. BF1105, BF1109, BF1109 spice bf1105 spice bf1105 BF1109
BSX86

Abstract: 2SJ13 T072 UC804 310M OM02 uc450 UC340 UC801 UC803
Text: SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors 40UC 45°C 50°C 75"C J Symbols indicate temperature at which derating starts. 0 — With , (Also see top of reverse side of card.) Ill 6. SILICON FIELD EFFECT TRANSISTORS ■P CHANNEL IN


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PDF NPN110. MEM402Ã V11023 BSX86 2SJ13 T072 UC804 310M OM02 uc450 UC340 UC801 UC803
CIL 1302

Abstract: cil 1305
Text: diodes are basically N channel junction field effect transistors with on-chip metalizatiofl shorting the , T E L E D Y N E COMPONENTS EflE D a*U7fe.aa ÜOÜbt.75 3 CIL-1300 thru CIL-1305 ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC c m · CURRENT CONSTANT OVER WIDE VOLTAGE RANGE · HIGH SOURCE IMPEDANCE · CONNECT IN PARALLEL FOR HIGHER CURRENT MAXIMUM RATINGS PARAM ETER SYM BO L V A LU E UN ITS DO-7 Package Glass Body Du met Leads, Tinned I Cathode (Wide


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PDF CIL-1300 CIL-1305 CIL 1302 cil 1305
2000 - Not Available

Abstract: No abstract text available
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS SMALL SIGNAL FET’S XMFS Series FEATURES s Low noise figure s Excellent associated gain APPLICATIONS s Low noise applications up to c-band 6GHz s WLAN, WLL, DBS tuner/converter, GPS s Low noise amplifiers or oscillator circuits DIMENSIONS: mm XMFS2-M1 XMFS3-M1 1.5 ቤ ባ B ቢ 1.9 2.9 A ብ ቢ 0.3 0.8 Pin ቢ Source ባ Gate ቤ Source ብ Drain B k A A k ባ 1.9 0.65 0.4


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PDF 100mA 0-35-E, CG01-I
2N3824

Abstract: 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392
Text: E>Ea©E)[y)©¥ ©ARAL©®_ LOW POWER FIELD EFFECT TRANSISTORS Type Number Case Style (TO-) Geometry •BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) Idss Min (mA) Max Igss or •Idgo Max (nA) R(on) Max (ohms) T(on) Max (nS) T(off) Max (nS) 2N3824 72 FN3.6 50 6.0 3.0 - 8.0 _ _ 0.10 250 — _ 2N3966 72 FN2.5 30 6.0 1.5 4.0 6.0 2.0 — 1.00 220 — — 2N3970 18 FN7.1 40 , -6 ■A3bflb02 0GG40H7 71T ■LOW POWER FIELD EFFECT TRANSISTORS )W0¥©[}»(lg KMêMONMIL ^HTÂ


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PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4448 2N5432 2N4391 2N4392
J202 equivalent

Abstract: No abstract text available
Text: SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 P01 P02 PO3 P 04 FMMJ201 to FM M J204 ABSOLUTE MAXIMUM RATINGS at Tam b = 2 5°C Gate Drain or Gate-Source Voltage (Notes) Continous Forward Gate Current Continuous Device Dissipation at (or below) T amb = 25°C -40V 50M A 225m W ELECTRICAL CHARACTERISTICS (25°C) PARAMETER Gate Reverse Current Gate Source C ut-O ff Voltage Gate Source Breakdown Voltage Saturation Dram Current (Note


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PDF FMMJ201 J202 equivalent
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