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FZT853TA Diodes Incorporated Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
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FZT853 Diodes Incorporated Newark element14 918 $1.04 $0.48
FZT853 Diodes Incorporated element14 Asia-Pacific 918 $1.18 $0.54
FZT853 Diodes Incorporated element14 Asia-Pacific 918 $1.18 $0.54
FZT853 Diodes Incorporated Farnell element14 1,778 £0.37 £0.28
FZT853TA Diodes Incorporated Avnet - $0.38 $0.32
FZT853TA Diodes Incorporated Avnet - $0.39 $0.33
FZT853TA Diodes Incorporated Allied Electronics & Automation - $1.16 $0.83
FZT853TA Zetex / Diodes Inc Bristol Electronics 1,000 - -
FZT853TA Diodes Incorporated New Advantage Corporation 2,000 - -

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FZT853 datasheet (8)

Part Manufacturer Description Type PDF
FZT853 Diodes 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Original PDF
FZT853 Kexin NPN Silicon Planar High Current Transistor Original PDF
FZT853 TY Semiconductor NPN Silicon Planar High Current Transistor - SOT-223 Original PDF
FZT853 Zetex Semiconductors SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS Original PDF
FZT853 Zetex Semiconductors SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS Original PDF
FZT853TA Diodes Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 100V 6000MA SOT-223 Original PDF
FZT853TA Zetex Semiconductors SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS Original PDF
FZT853TC Diodes Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN HI CURRENT SOT223 Original PDF

FZT853 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - C01A

Abstract: fzt853 FZT851 FZT951 FZT953
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS FZT851 FZT853 ISSUE 2 , DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT851 FZT853 UNIT Collector-Base Voltage V CBO 150 200 V Collector-Emitter , copper equal to 4 square inch minimum 3 - 260 FZT853 FZT853 ELECTRICAL CHARACTERISTICS T amb , PARAMETER 3 - 264 100 FZT853 FZT853 ELECTRICAL CHARACTERISTICS T amb = 25°C (atunless


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PDF OT223 FZT851 FZT853 FZT951 FZT953 100ms C01A fzt853 FZT851 FZT951 FZT953
Not Available

Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURREI (HIGH PERFORMANCE) TRANSISTORS I I ISSUE 2 - OCTOBER 1995_ FEATURES * * * * FZT851 FZT853 Extremely low equ , COMPLEMENTARY TYPES- DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Emitter Voltage FZT851 FZT853 UNIT VC BO Collector-Base Voltage , upon request for this device * n 7 0 5 7 fl □ □ □ ‘1 4 3 0 3 -2 6 3 5 4 3 FZT853


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PDF OT223 FZT851 FZT853 FZT951 FZT953
2013 - FZT853

Abstract: No abstract text available
Text: (Note 4) Product FZT853TA Notes: Compliance AEC-Q101 Marking FZT853 Reel size (inches) 7 , A Product Line of Diodes Incorporated Green FZT853 100V NPN MEDIUM POWER TRANSISTOR IN , ://www.diodes.com Marking Information FZT 651 853 FZT853 = Product Type Marking Code FZT853 Document , Line of Diodes Incorporated FZT853 Maximum Ratings (@TA = +25°C, unless otherwise specified , the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT853 Document


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PDF FZT853 OT223 150mV FZT953 AEC-Q101 OT223 J-STD-020 DS33175 FZT853
K 3264 fe

Abstract: FZT853 NPN BH RE
Text: FZT851 FZT853 - 6 A m p s c o n tin u o u s c u rre n t, up to 20 A m p s peak c u rre n t PAR TM ARKING DETAILS C O M PLEM ENTAR Y T Y P E S - DEVICE TYPE IN FULL FZT851 FZT853 , ra tu re Range SYM BO L VCBO V CEO FZT851 150 60 6 20 6 3 FZT853 200 100 6 10 UNIT V V V A , VcE - Collector Voltage (V) S afe O perating Area 3 - 262 FZT853 ELECTRICAL , available upon request fo r this device 3-263 FZT853 TYPICAL CHARACTERISTICS 300 i. V ce


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PDF OT223 FZT851 FZT853 FZT853 FZT951 FZT953 K 3264 fe NPN BH RE
FZT851

Abstract: FZT853 DS-310
Text: RATINGS PARAMETER SYMBOL FZT851 FZT853 UNIT Collector-Base Voltage VcBO 150 200 V Collector-Emitter , {SAMPLES UPON REQUEST) FZT851 FZT853 DS309 FZT851 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless , lBi=lB2-100mA * Measured under pulsed conditions. Pulse Width = 300^is. Duty cycle s 2%. DS310 FZT853


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PDF OT223 FZT851 FZT853 100oC 100mA* lB-500mA 500mA lc-10A, 100mA, ft50MHz DS-310
FZT853

Abstract: partmarking 6 Cc
Text: Amps FZT851 FZT853 C E C B PARTMARKING DETAILS COMPLEMENTARY TYPES - DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage , FZT851 150 60 6 20 6 3 -55 to +150 FZT853 200 100 6 10 UNIT V V V A A W °C *The power which can be , minimum 3 - 260 FZT853 ELECTRICAL CHARACTERISTICS T amb = 25°C (atunless otherwise stated , parameter data is available upon request for this device FZT853 -


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PDF OT223 FZT851 FZT853 FZT951 FZT853 FZT953 100mA* 500mA* partmarking 6 Cc
2002 - P8208T

Abstract: do213AC pe-68386 R0805 C0805 GHM1530X7R sum85n15 T491X107K016AS PA1494 LS4448
Text: VDD = 12V VDD 6 7 8 9 10 10u,16V C17 E FZT853 Q1 C 0.1u,16V , -19 FZT853 10 0 49.9k 500 5000 TBD 39.2k 2.2 10k 383 280k 499k 2k 8.25k 1.1k 2.2k 3.74k , Semiconductor) LQH4N102K04 (Murata) FZT853 (Zetex) MRC1-100-5000-F-7 MRC1-100-5001-F-7 PE , VDD = 12V VDD 6 7 8 9 10 10u,16V C17 E FZT853 Q1 C 0.1u,16V


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PDF SC4905A/B SC4905A/B 680pF SC4905 470pF PE-68386 MOCD207 MBR2080CT MBR2080CT P8208T do213AC pe-68386 R0805 C0805 GHM1530X7R sum85n15 T491X107K016AS PA1494 LS4448
2002 - MURATA GRM44

Abstract: pe-68386 do213AC R0805 C0805 DO-213AC GHM1545X7R474K250 MOCD207 GRM44 fzt853
Text: R7 5000 R6 5000 C10 .47uF,100V C B A C13 1u,100V C12 1u,100V 4 FZT853 , SUD15N15-95 OUT FZT853 10 0 49.9k 500 5000 TBD LR2512-01-R025FTR 2.2 280k 499k 2k 500 8.25k , .123T (Pulse) LQH4N102K04 (Murata) SUD15N15-95 (Vishay) FZT853 (Zetex) MRC1-100-5000-F-7 MRC1


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PDF SC4905A/B SC4905A/B c334K250 ZM4742A P1173 LQH4N102K04 SUD15N15-95 FZT853 MRC1-100-5000-F-7 MURATA GRM44 pe-68386 do213AC R0805 C0805 DO-213AC GHM1545X7R474K250 MOCD207 GRM44 fzt853
1997 - FZT851

Abstract: C01A fzt853 FZT951 FZT953 DSA003717
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS FZT851 FZT853 ISSUE 2 - OCTOBER 1995 FEATURES * * * * C Extremely low equivalent on-resistance; RCE(sat) 44m at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent , DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT851 FZT853 UNIT Collector-Base Voltage V CBO 150 200 V Collector-Emitter


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PDF OT223 FZT851 FZT853 FZT951 FZT953 100mA, FZT851 C01A fzt853 FZT951 FZT953 DSA003717
Not Available

Abstract: No abstract text available
Text: Transistors SMD Type Product specification FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE(sat) 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 6 Amps continuous current, up to 20 Amps peak current 4 Very low saturation voltages Excellent hFE , Transistors SMD Type Product specification FZT853 Electrical Characteristics Ta = 25 Parameter


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PDF FZT853 OT-223 300mA* 100mA 100mA, 50MHz
FZT858

Abstract: fzt957
Text: SOT223 HIGH C U R R EN T (HIGH PERFO RM AN CE) T R A N S IS T O R S Pinout : 1-Base, 2&4-Collector, 3-Emitter r Type NPN FZT857 FZT855 FZT853 FZT851 FZT869 FZT849 PNP FZT958 FZT957 FZT956 FZT955 FZT953 FZT951 FZT949 FZT948 FZT968 -400 -300 -220 -180 -140 -100 -50 -40 -15 -400 -300 -200 -140 -100 -60 -30 -20 -12 -0.5 -1.0 -2.0 -4.0 -5.0 -5.0 -5.5 -6.0 -6.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 VCBO , - FZT857 - FZT855 FZT853 FZT851 FZT849 - - t FZT858 (NPN com plem ent to FZT958) is


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PDF OT223 FZT857 FZT855 FZT853 FZT851 FZT869 FZT849 FZT958 FZT957 FZT956 FZT858
FZT853

Abstract: npn smd 2a smd transistor 2A 6a smd transistor
Text: Transistors SMD Type NPN Silicon Planar High Current Transistor FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE(sat) 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 6 Amps continuous current, up to 20 Amps peak current 4 Very low saturation voltages Excellent hFE , Storage Temperature Range www.kexin.com.cn 1 Transistors SMD Type FZT853 Electrical


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PDF FZT853 OT-223 300mA* 100mA, 50MHz 100mA FZT853 npn smd 2a smd transistor 2A 6a smd transistor
2004 - ztx1053a

Abstract: ZTX851 ZTX853
Text: FCX1053A FMMT620 FZT853 ZTX853 FZT653 ZTX653 FZT493 FCX493 ZTX453 FMMT493 60 60 60 60 60 60 60 60 60 60 60


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PDF FZT851 ZTX851 FZT651 ZTX651 FCX491 FZT491 ZTX451 FMMT451 FMMT491 FMMT493A ztx1053a ZTX853
Not Available

Abstract: No abstract text available
Text: BFN38 FZTA42 FZT657 BF720 BSP20 BFN36 BF722 FZT855 FZT853 FZT696B FZT655 FZT694B FZT653 FZT493 t Typical


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PDF OT223 FZT658 FZT458 BSP19 FZT857 BFN38 FZTA42 FZT657 BF720 BSP20
1997 - FZT953

Abstract: FZT853 FZT851 FZT951
Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps * Ptot = 3 watts * FZT951 exhibts extremely low equivalent on resistance; RCE(sat) 55m at 4A COMPLEMENTARY TYPES - FZT951 = FZT851 FZT953 = FZT853 PARTMARKING DETAILS DEVICE TYPE IN FULL C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER


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PDF FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 FZT853 FZT851
Not Available

Abstract: No abstract text available
Text: FZT853 Transistors Si NPN Power HF BJT Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)200 I(C) Max. (A)6 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 @I(C) (A) (Test Condition)2 @V(CE) (V) (Test Condition)2 f(T) Min. (Hz) Transition Freq130MÂ @I(C) (A) (Test Condition)100m @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V).34 @I(C) (A) (Test Condition)5 @I(B) (A


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PDF FZT853 Freq130MÃ StyleSOT-223 Code4-179
2004 - CT7343

Abstract: TSSOP16 LAND PATTERN P8208 si2308 m7 sod123 current sensing transformer P8208T R36 SOT223 R54 SOT223 SC1302
Text: 1 D5 1N4148WS 6 D8 MMSZ4698(11V) Q3 FZT853 6 1 4 1 5 6 7 8 4 3 2 1 , -23 Zetex FMMT718 27 1 Q3 FZT853 SM/SOT223_BCEC Zetex FZT853 28 1 Q10 , FZT853 2 LUVLO GND 12 VDD PGND 14 1 2 3 4 U2 SC1302A 1uF C24 4 2 , -8 IRF6216 SO-8 SI2308 SOT-23 Si4488DY SO-8 FMMT618 SOT-23 FZT853 SM/SOT223 FMMT718 SOT , FMMT618 FZT853 FMMT718 FMMT493 SM0805 1K Manufacturer TDK SM0805 20 www.semtech.com


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PDF SC4810A/B/C/D/E SC4810A/B/C/D/E SM0805 PA0646 P8208 TSSOP16 CT7343 TSSOP16 LAND PATTERN P8208 si2308 m7 sod123 current sensing transformer P8208T R36 SOT223 R54 SOT223 SC1302
2006 - R53 SOT223

Abstract: P8208 CT7343 SC431L "Power over LAN" SC4810B SC4810E SC4810EITSTRT TSSOP-16 SOT23 MARK R50
Text: 1 D5 1N4148WS 6 D8 MMSZ4698(11V) Q3 FZT853 6 1 4 1 5 6 7 8 4 3 2 1 , -23 Zetex FMMT718 27 1 Q3 FZT853 SM/SOT223_BCEC Zetex FZT853 28 1 Q10 , FZT853 2 LUVLO GND 12 VDD PGND 14 1 2 3 4 U2 SC1302A 1uF C24 4 2 , -8 IRF6216 SO-8 SI2308 SOT-23 Si4488DY SO-8 FMMT618 SOT-23 FZT853 SM/SOT223 FMMT718 SOT , FMMT618 FZT853 FMMT718 FMMT493 SM0805 1K Manufacturer TDK SM0805 20 www.semtech.com


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PDF SC4810B/E SC4810B/E MLPQ-16, R53 SOT223 P8208 CT7343 SC431L "Power over LAN" SC4810B SC4810E SC4810EITSTRT TSSOP-16 SOT23 MARK R50
2005 - P8208T

Abstract: PA0801 gate pulse transformer pa0264 sot23-5pin SC4806MLTRT SC4806 SC4431 SC431 SC1301A MLPQ-12
Text: . 13 www.semtech.com SC4806 POWER MANAGEMENT Push Pull Evaluation Board Sch FZT853 Q2 B , SUD19N20-90 FMMT718 FZT853 10k 3.01k 301 20k 1k 15 49.9k 250 100 2.2 10 16.2 56.2k 10k TBD , -90(vishay) FMMT718 (Zetex) FZT853 (Zetex) PA0810(Pulse) P8208T(Pulse) PE-68386(Pulse) SC4806(Semtech , Evaluation Board Schematics 1 R8 49.9k FZT853 Q2 B C25 1nF R9 250 VCC = 12V VCC , LQH43MN102K011 SUD19N20-90 FZT853 10k 1k 15 10 49.9k 250 100 2.2 10 16.2 56.2k 10k TBD 15k 316k


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PDF SC4806 SC4806 MLPQ-12, P8208T PA0801 gate pulse transformer pa0264 sot23-5pin SC4806MLTRT SC4431 SC431 SC1301A MLPQ-12
1997 - F2T951

Abstract: taml ic 1240 FZT851 FZT853 FZT951 FZT953 LFZT951 LB1200
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS m ISSUE 2- OCTOBER 1995 FEATURES ` 5 Amps continuous current, * Very low saturation voltages * Excellent * PtOt. 3 watts ` F2T951 exhibts `CEl$at) up to 15 Amps peak current gain characteristics extremely c specified up to 10 Amps low equivalent E on resistance; 55mQ at 4A COMPLEMENTARY TYPES - l._L- FZT953 = FZT853 PARTMARKING DEVICE TYPE IN FULL DETAILS -


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PDF OT223 F2T951 FZT953 FZT853 FZT951 taml ic 1240 FZT851 FZT853 FZT951 FZT953 LFZT951 LB1200
bipolar junction transistor

Abstract: FZT953 Bipolar Junction Transistor npn DZT3150 DZT953 DZT853 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a npn 5a
Text: , Inc. DZT853 DZT953 DZT851 DZT951 DZT3150 Zetex FZT853 FZT953 FZT851 FZT951 - Central


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PDF OT-223 DZT851, DZT853, DZT951, DZT953 OT-223 DZT851 DZT951 DZT853 bipolar junction transistor FZT953 Bipolar Junction Transistor npn DZT3150 DZT953 DZT853 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a npn 5a
2006 - pwm 565

Abstract: C2787 CT7343 si2308 SC431 mark py sot dc SC1302A 1N4148WS SC4810 SC4810B
Text: 1 D5 1N4148WS 6 D8 MMSZ4698(11V) Q3 FZT853 6 1 4 1 5 6 7 8 4 3 2 1 , -23 Zetex FMMT718 27 1 Q3 FZT853 SM/SOT223_BCEC Zetex FZT853 28 1 Q10 , FZT853 2 LUVLO GND 12 VDD PGND 14 1 2 3 4 U2 SC1302A 1uF C24 4 2 , -8 IRF6216 SO-8 SI2308 SOT-23 Si4488DY SO-8 FMMT618 SOT-23 FZT853 SM/SOT223 FMMT718 SOT , FMMT618 FZT853 FMMT718 FMMT493 SM0805 1K Manufacturer TDK SM0805 20 www.semtech.com


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PDF SC4810B/E SC4810B/E pwm 565 C2787 CT7343 si2308 SC431 mark py sot dc SC1302A 1N4148WS SC4810 SC4810B
Not Available

Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * * * * * 5 Am ps continuous c u rre n t, up to 15 Am ps peak current Very lo w saturation voltages Excellent gain characteristics specified up to 10 Am ps P.«» tot = 3 w a tts FZT951 exhibts extrem ely lo w equivalent on resistance; FZT951 - FZT851 FZT953 = FZT853 DEVICE TYPE IN FULL FZT951 FZT953 - ^CEIsat) 55nr,ii at 4A COMPLEMENTARY TYPES PARTMARKING


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PDF OT223 FZT951 FZT851 FZT953 FZT853 -10Ar -100mA,
2003 - c2555

Abstract: C2654 do213AC 5sc4905 SOT23-5PIN MSOP-10 SC4905B SC4431 LR2512-01-R025FTR GHM1545X7R474K250
Text: -3 500 R17 C17 1u, 16V R13 0 GRM42-2X5R106K16 (Murata) C15 10u,16V E FZT853 Q1 C , -3 (Central Semiconductor) B140T short REF VDD 9uH LQH4N102K04 SUD15N15-95 OUT FZT853 10 0 49.9k , .123T (Pulse) LQH4N102K04 (Murata) SUD15N15-95 (Vishay) FZT853 (Zetex) MRC1-100-5000-F-7 MRC1


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PDF SC4905A/B SC4905A SC4905B 220pF, c2555 C2654 do213AC 5sc4905 SOT23-5PIN MSOP-10 SC4905B SC4431 LR2512-01-R025FTR GHM1545X7R474K250
1997 - FLUORESCENT LIGHTING Inverter

Abstract: fx3439 pulse transformer transistor TRANSISTOR W2 light FLUORESCENT TUBE fluorescent 12v circuit fluorescent tube 12v Inverter high voltage power transistor 12V 4A Transformer DT2523
Text: package, (enhanced TO92) and also in the surface mount SOT223 package as the FZT853. AN 1 - 2


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PDF 015uF TL8W/33 068uF ZTX652 26swg. 28swg. 36swg. FLUORESCENT LIGHTING Inverter fx3439 pulse transformer transistor TRANSISTOR W2 light FLUORESCENT TUBE fluorescent 12v circuit fluorescent tube 12v Inverter high voltage power transistor 12V 4A Transformer DT2523
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