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LT1124MS Linear Technology IC DUAL OP-AMP, 3000 uV OFFSET-MAX, PDSO, Operational Amplifier
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Not Available

Abstract: No abstract text available
Text: 67 300 200 111 84 67 300 200 111 84 67 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 , ±3.3 ±150 3000 68 AM1L-0305DH30-FZ 2.97-3.63 ±5 ±100 3000 70 AM1L-0309DH30-FZ 2.97-3.63 ±9 ±56 3000 74 AM1L-0312DH30-FZ 2.97-3.63 ±12 ±42 3000 76 AM1L-0315DH30-FZ 2.97-3.63 ±15 ±34 3000 74 AM1L-0503DH30-FZ 4.5-5.5 ±3.3 ±150 3000 74 AM1L-0505DH30-FZ 4.5-5.5 ±5 Â


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PDF 3000VDC AM1L-0303S-FZ AM1L-0305S-FZ AM1L-0309S-FZ AM1L-0312S-FZ AM1L-0315S-FZ AM1L-0503S-FZ AM1L-0505S-FZ AM1L-0509S-FZ AM1L-0512S-FZ
FZ 77 1000

Abstract: No abstract text available
Text: 84 67 200 200 110 84 67 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 77 81 78 80 81 77 81 78 80 81 75 81 , -2405D-FZ AM1L-2409D-FZ AM1L-2412D-FZ AM1L-2415D-FZ AM1L-0505DH30-FZ 4.5-5.5 ±5 ±100 3000 71 AM1L-0509DH30-FZ 4.5-5.5 ±9 ±56 3000 78 AM1L-0512DH30-FZ 4.5-5.5 ±12 ±42 3000 78 AM1L-0515DH30-FZ 4.5-5.5 ±15 ±34 3000 81 AM1L-1205DH30-FZ 10.8-13.2 ±5 ±100 3000 73 AM1L-1209DH30-FZ 10.8-13.2


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PDF 3000VDC AM1L-0303S-FZ AM1L-0305S-FZ AM1L-0309S-FZ AM1L-0312S-FZ AM1L-0315S-FZ AM1L-0503S-FZ AM1L-0505S-FZ AM1L-0509S-FZ AM1L-0512S-FZ FZ 77 1000
FZ 83 1000 capacitor

Abstract: No abstract text available
Text: 84 67 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 77 81 78 80 81 77 81 78 80 81 75 81 78 81 83 67 71 73 , ±100 ±100 ±56 ±42 ±34 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 71 78 78 81 73 79 81 83 66 76 78 80 75 Model NOTE: All specifications in this , ) Tel: +1 514 620 2722 2 of 4 Rated Units 1000, 3000 VDC MOhm pF Toll free: + 1 888 9


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PDF 3000VDC AM1L-0303S-FZ AM1L-0305S-FZ AM1L-0309S-FZ AM1L-0312S-FZ AM1L-0315S-FZ AM1L-0503S-FZ AM1L-0505S-FZ AM1L-0509S-FZ AM1L-0512S-FZ FZ 83 1000 capacitor
Not Available

Abstract: No abstract text available
Text: 200 200 110 84 67 200 200 110 84 67 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 77 81 78 80 81 75 81 78 81 83 67 71 73 76 77 , ) Output Current max (mA) Isolation (VDC) 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 AM1LH-0505DH30-FZ 4.5-5.5 ±5 ±100 AM1LH-0509DH30-FZ 4.5-5.5 ±9  , 5V input model 12V input model 24V input model Rated Units 1000, 3000 VDC MOhm 1000


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PDF -40oC 3000VDC AM1LH-0503S-FZ AM1LH-0505S-FZ AM1LH-0509S-FZ AM1LH-0512S-FZ AM1LH-0515S-FZ AM1LH-1203S-FZ AM1LH-1205S-FZ AM1LH-1209S-FZ
Not Available

Abstract: No abstract text available
Text: 84 67 200 200 110 84 67 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 77 81 78 80 81 75 81 78 81 83 67 71 73 76 77 Input Voltage , ±56 ±42 ±34 ±100 ±100 ±56 ±42 ±34 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 71 78 78 81 73 79 81 83 66 76 78 80 85 NOTE: All , Bandwidth Tel: +1 514 620 2722 2 of 6 VDC VDC mA Rated Units 1000, 3000 1000 30


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PDF AM1LH-0503S-FZ AM1LH-0505S-FZ AM1LH-0509S-FZ AM1LH-0512S-FZ AM1LH-0515S-FZ AM1LH-1203S-FZ AM1LH-1205S-FZ AM1LH-1209S-FZ AM1LH-1212S-FZ AM1LH-1215S-FZ
1998 - IC2500

Abstract: FZ 800 R 12 KF6
Text: mm mm Nm Nm Nm g FZ 1600 R 17 KF6 3500 3500 3000 3000 IC2500 [A] 2000 2500 , 3500 3500 3000 Tj = 25°C Tj = 125°C 3000 Tj = 25°C Tj = 125°C IC2500 [A] 2000 , = 0,9, VCE = 900V, Tj = 125°C 2500 3000 IC [A] 3500 0 1 2 3 FZ 1600 R 17 , Wärmewiderstand / Transient thermal impedance ZthJC = f (t) 3500 3000 2500 IC [A] 2000 IC,Modul IC


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2001 - igbt 1500A

Abstract: igbt module 1500A
Text: Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 3000 A , IF 1500 A IFRM 3000 A 2 I t 900 kA2s VISOL 5 kV , GE = 15V 3000 Tj = 25°C 2500 Tj = 125°C IC [A] 2000 1500 1000 500 0 0,0 , 125°C 3000 VGE = 20V VGE = 15V 2500 VGE = 12V VGE = 10V VGE = 9V IC [A] 2000 VGE , C = f (V GE) VCE = 10V 3000 Tj = 25°C Tj = 125°C 2500 IC [A] 2000 1500 1000


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PDF FZ151 igbt 1500A igbt module 1500A
1999 - der FZ 1600 R 12 KF4

Abstract: 12KF4
Text: notes. ca.1500 g FZ 1600 R 12 KF4 3500 3500 3000 3000 iC [A] 2500 1500 1000 , ) / Collector-emitter-voltage in saturation region (typical) Tvj = 125°C 3500 3500 t vj = 3000 iC [A] 2500 25°C 3000 iC [A] 2500 125°C 2000 2000 1500 1500 1000 1000 500 500 0 5 6 , 3000 iF [A] 2500 5 ZthJC 3 [°C/W ] Diode 2 IGBT 2000 10 -2 1500 7 5


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1998 - fz 79 1500

Abstract: ic 4800 MAX879 FZ 79 IGBT FZ 1000 IC3500 FZ 800 R 12 KF6
Text: 4500 4500 4000 4000 IC 3500 [A] VGE = 20V IC3500 [A] 3000 VGE = 12V VGE = 15V 3000 2500 2500 VGE = 10V 2000 2000 Tj = 25°C Tj = 125°C 1500 1500 1000 500 , 4500 Tj = 25°C Tj = 125°C 4000 Tj = 25°C Tj = 125°C 4000 IC3500 [A] 3000 IF 3500 [A] 3000 2500 2500 2000 2000 1500 1500 1000 1000 500 500 0 5 6 , 500 1000 1500 2000 2500 3000 FZ 2400 R 17 KF6 / 5 Bild / Fig. 5 Schaltverluste


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1999 - 4kA IGBT

Abstract: transistor 13000 4000 ic 13000 transistor 12KF4
Text: 4000 iC [A] 20 V 15 V 12 V 4000 iC [A] 3000 VGE = 3000 10 V 9V 2000 , °C 125°C 4000 4000 iC [A] iC [A] 3000 3000 2000 2000 1000 1000 0 5 6 , ZthJC 2 [°C/W ] 10 -2 4000 iF [A] Diode IGBT 7 5 3000 3 2 10 2000 -3 7


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1999 - igbt 1500A

Abstract: No abstract text available
Text: °C ICRM 3000 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 15,6 kW VGES +/- 20V V IF 1500 A IFRM 3000 A I2t 900 kA2s , ) Output characteristic (typical) vorläufige Daten preliminary data I C = f (VCE) VGE = 15V 3000 , ] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (VCE) Tvj = 125°C 3000 VGE = 20V VGE = , characteristic (typical) I C = f (VGE) VCE = 10V 3000 Tj = 25°C Tj = 125°C 2500 IC [A] 2000


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PDF FZ151 igbt 1500A
1999 - fz 79 1500

Abstract: KF423
Text: 3000 3000 iC [A] iC [A] 2000 VGE = 20V 15V 12V 2000 10V 9V 1000 1000 8V 0 , = 125 °C 4000 4000 tvj= 125°C 25°C 3000 iC [A] 3000 iC [A] 2000 2000 1000 , (th)JC [°C/W] 10-2 IGBT 6 4 3000 iF [A] 2000 2 10-3 1000 6 4 2 10-4 10-3


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1999 - 12KF4

Abstract: W0024
Text: =20V 3000 iC [A] 2000 15V 3000 iC [A] 2000 12V 10V 9V 1000 1000 0 1 2 3 , 125°C 10-1 8 4000 tvj= 125°C 25°C 3000 iC [A] 6 4 Z(th)JC [°C/W] 2 Diode IGBT , ] 12 3000 iF [A] 2000 1000 1,5 4 6 10 -2 2 4 6 10-1 2 Bild / Fig. 4


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1998 - FZ 1800 R 17 KF4

Abstract: FZ 79 KF423 IGBT FZ 1800 eupec igbt 400 a 1000 v
Text: .2300 g FZ 1800 R 17 KF4 4000 3000 3000 iC [A] iC [A] 2000 VGE = 20V 15V 12V , ) Collector-emitter-voltage in saturation region (typical) tvj = 125 °C 4000 4000 tvj= 125°C 25°C 3000 iC [A] 3000 iC [A] 2000 2000 1000 1000 0 5 6 7 8 9 10 FZ 1800 R 17 KF4 , = 20V 10-1 4000 6 4 Diode Z(th)JC [°C/W] 10-2 IGBT 6 4 3000 iF [A] 2000


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1999 - IGBT module FZ

Abstract: No abstract text available
Text: 4000 iC [A] 20 V 15 V 12 V 4000 iC [A] 3000 VGE = 3000 10 V 9V 2000 , °C 125°C 4000 4000 iC [A] iC [A] 3000 3000 2000 2000 1000 1000 0 5 6 , ZthJC 2 [°C/W ] 10 -2 4000 iF [A] Diode IGBT 7 5 3000 3 2 10 2000 -3 7


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1999 - IGBT EUPEC FZ 1800 R

Abstract: IGBT FZ 1000 KF423 IGBT FZ 1800 fz 79 1500 eupec FZ 1800 G1 TRANSISTOR FZ 101
Text: 3000 3000 iC [A] iC [A] 2000 VGE = 20V 15V 12V 2000 10V 9V 1000 1000 8V 0 , = 125 °C 4000 4000 tvj= 125°C 25°C 3000 iC [A] 3000 iC [A] 2000 2000 1000 , (th)JC [°C/W] 10-2 IGBT 6 4 3000 iF [A] 2000 2 10-3 1000 6 4 2 10-4 10-3


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1999 - der FZ 1600 R 12 KF4

Abstract: No abstract text available
Text: notes. ca.1500 g FZ 1600 R 12 KF4 3500 3500 3000 3000 iC [A] 2500 1500 1000 , ) / Collector-emitter-voltage in saturation region (typical) Tvj = 125°C 3500 3500 t vj = 3000 iC [A] 2500 25°C 3000 iC [A] 2500 125°C 2000 2000 1500 1500 1000 1000 500 500 0 5 6 , 3000 iF [A] 2500 5 ZthJC 3 [°C/W ] Diode 2 IGBT 2000 10 -2 1500 7 5


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1999 - Not Available

Abstract: No abstract text available
Text: 4000 3000 2000 1000 0 0 300 600 900 1200 1500 1800 2100 2400 IC [A , = 125°C 3000 2400 IC [A] 1800 1200 IC,Modul IC,Chip 600 0 0 500 1000 1500 2000 2500 3000 3500 VCE [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) T = 125°C vj 3000 2400 IR [A] 1800 1200 600 0 0 500 1000 1500 2000 2500 3000 3500 VR [V] 7 (9) Datenblatt FZ 1200 R 33 KF2


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IGBT FZ 1200

Abstract: kf411 12KF4
Text: VGE=20V 3000 iC [A] 2000 15V 3000 iC [A] 2000 12V 10V 9V 1000 1000 0 1 , saturation region (typical) tvj = 125°C 10-1 8 4000 tvj= 125°C 25°C 3000 iC [A] 6 4 Z(th , 10 FZ 1800 R 12 KF4 11 vGE [V] 12 3000 iF [A] 2000 1000 1,5 4 6 10-2


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1999 - FZ 44 NS

Abstract: IGBT module FZ 1200 IGBT FZ 1200 IGBT modules FZ M2 1200 DIODE
Text: , Tj = 125°C 10000 Eon 9000 Eoff 8000 Erec E [mJ] 7000 6000 5000 4000 3000 , °C 3000 2400 IC [A] 1800 1200 IC,Modul IC,Chip 600 0 0 500 1000 1500 2000 2500 3000 3500 VCE [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) T = 125°C vj 3000 2400 IR [A] 1800 1200 600 0 0 500 1000 1500 2000 2500 3000 3500 VR [V] 7 (9) Datenblatt FZ 1200 R 33 KF2 20.07.99


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1999 - ic 4800

Abstract: FZ2400R17KF6B2 FZ2400R17KF6-B2 fz 79 1500 4500 igbt
Text: ) I C = f (V CE) V GE = 15V 5000 4500 4000 IC [A] 3500 3000 2500 2000 Tj = 25 , 3000 VGE = 9V VGE = 8V 2500 2000 1500 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 , °C IC [A] 3500 3000 2500 2000 1500 1000 500 0 5 6 7 8 9 10 11 12 13 , (typical) I F = f (V F) 5000 4500 Tj = 125°C Tj = 25°C 4000 IF [A] 3500 3000 2500 2000 , 125°C, VGE = ± 15V Switching losses (typical) 3000 Eoff 2500 Eon Erec E [mJ] 2000


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PDF FZ2400R17KF6B2 ic 4800 FZ2400R17KF6B2 FZ2400R17KF6-B2 fz 79 1500 4500 igbt
2001 - igbt 1500A

Abstract: igbt module 1500A IGBT 1500
Text: Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 3000 A , IF 1500 A IFRM 3000 A 2 I t 900 kA2s VISOL 5 kV , GE = 15V 3000 Tj = 25°C 2500 Tj = 125°C IC [A] 2000 1500 1000 500 0 0,0 , 125°C 3000 VGE = 20V VGE = 15V 2500 VGE = 12V VGE = 10V VGE = 9V IC [A] 2000 VGE , C = f (V GE) VCE = 10V 3000 Tj = 25°C Tj = 125°C 2500 IC [A] 2000 1500 1000


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2002 - IGBT module FZ

Abstract: IGBT FZ 200 22nf IGBT FZ 1200 kf1 IGBT module FZ 1200 IGBT module FZ 400 IGBT FZ 1000
Text: =±15V, VCE = 3600V, Tvj = 125°C, 5500 5000 4500 Eon Eoff E [mJ] 4000 Erec 3500 3000 2500 , 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 VCE [V] (at auxiliary , = 125°C 450 400 350 IR [A] 300 250 200 150 100 50 0 0 1000 2000 3000 4000


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2002 - IGBT FZ 1200

Abstract: FZ1200R33KF2
Text: Eoff 8000 Erec E [mJ] 7000 6000 5000 4000 3000 2000 1000 0 0 300 600 900 , operation area IGBT (RBSOA) RG,off = 1,8, CGE = 220 nF Tvj= 125°C 3000 2400 IC [A] 1800 IC,Modul 1200 IC,Chip 600 0 0 500 1000 1500 2000 2500 3000 3500 VCE [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) Tvj= 125°C 3000 2400 IR [A] 1800 1200 600 0 0 500 1000 1500 2000 2500 3000 3500


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PDF FZ1200R33KF2 IGBT FZ 1200
1999 - Not Available

Abstract: No abstract text available
Text: notes. ca.1500 g FZ 1600 R 12 KF4 3500 3500 3000 3000 iC [A] 2500 1500 1000 , ) / Collector-emitter-voltage in saturation region (typical) Tvj = 125°C 3500 3500 t vj = 3000 iC [A] 2500 25°C 3000 iC [A] 2500 125°C 2000 2000 1500 1500 1000 1000 500 500 0 5 6 , 3000 iF [A] 2500 5 ZthJC 3 [°C/W ] Diode 2 IGBT 2000 10 -2 1500 7 5


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