The Datasheet Archive

FS40SM-5 datasheet (2)

Part Manufacturer Description Type PDF
FS40SM-5 Mitsubishi Nch POWER MOSFET Original PDF
FS40SM-5 Renesas Technology MITSUBISHI Nch POWER MOSFET Original PDF

FS40SM-5 Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 Vdss , MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS , DRAIN-SOURCE VOLTAGE VDS (V) A MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED , MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE LU CE CE ZI O LU O CE ZI O , 5 3 2 101 7 5 3 2 10° 7 5 3 u tw=10^s — V 'TTT — r -i — |ST -s s 10 0


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PDF FS40SM-5
Not Available

Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS40SM-5 I4. 5 1.5 s HIGH-SPEED SWITCHING USE FS40SM-5 , - 5 5 -+ 1 5 0 - 5 5 ~ +150 4.8 Unit V V A A W °C °C Typical value g 2 - 86 A MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL , FS40SM-5 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 10 ' , MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE


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PDF FS40SM-5
1998 - FS40SM-5

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING , FS40SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter , DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE , DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE , DISSIPATION DERATING CURVE 300 0 50 100 150 200 tw=10µs 102 7 5 3 2 100µs 1ms


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PDF FS40SM-5 FS40SM-5
1998 - FS40SM-5

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING , FS40SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter , DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE , DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE , DISSIPATION DERATING CURVE 300 0 50 100 150 200 tw=10µs 102 7 5 3 2 100µs 1ms


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PDF
Not Available

Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING , Typical value °C - 5 5 ~ +150 Storage tem perature W - 5 5 ~ +150 g Feb. 1999 A MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL , (V) Feb. 1999 A MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED , MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE GATE-SOURCE


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PDF FS40SM-5
2004 - FS40SM-6A-A8

Abstract: ZD 103 FS40SM-6A REJ03G0278-0100 fs40sm
Text: 0 0 25 50 75 100 125 150 175 103 7 5 Tc = 25°C 3 Single Pulse 2 tw = 10 µs 102 7 5 3 100 µs 2 101 7 1 ms 5 3 2 100 DC 7 5 3 2 10­1 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Case Temperature Tc (°C) Output Characteristics (Typical) Drain Current ID (A , Tc = 25°C Pulse Test 0.16 0.12 0.08 VGS = 10V 20V 0.04 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Drain Current ID (A) FS40SM-6A Forward Transfer Admittance vs. Drain Current


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PDF FS40SM-6A REJ03G0278-0100 FS40SM-6A-A8 ZD 103 FS40SM-6A REJ03G0278-0100 fs40sm
Not Available

Abstract: No abstract text available
Text: Maximum power dissipation 275 W Tch Channel temperature - 5 5 ~ +150 °C Tstg Storage temperature - 5 5 ~ +150 °C 4.8 g — Weight Typical value Feb. 1999 A , CHARACTERISTICS Symbol V (BR) (T c h = 2 5 ° C ) Parameter Limits Test conditions Min. Typ , — — V dd = 150V, Id = 20A, V gs = 10V, Rgen = Rgs = 5 00 PERFORMANCE CURVES MAXIMUM , 4 8 12 16 < 0.04 CJ / <1 7 LU DC 0.02 20 1 0 -1 2 3 5 7 100 2 3 5 7


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PDF FS40SM-6
FS40SM-5

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING , FS40SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter , DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE , DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE , /inquiry. Notice 1. 2. 3. 4. 5 . 6. 7. All information included in this document is


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2004 - Not Available

Abstract: No abstract text available
Text: Dissipation PD (W) 300 200 150 100 50 0 0 25 50 75 100 125 150 175 103 7 5 Tc = 25°C 3 Single Pulse 2 tw = 10 µs 102 7 5 3 100 µs 2 101 7 1 ms 5 3 2 100 DC 7 5 3 2 10–1 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Case Temperature Tc (°C) Output , 0.08 VGS = 10V 20V 0.04 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Drain Current ID (A , Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 102 7 5 4 3 VDS = 10V Pulse


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PDF FS40SM-6A REJ03G0278-0100
1998 - 275W

Abstract: FS40SM-6
Text: DISSIPATION DERATING CURVE 300 0 50 100 150 200 102 7 5 3 2 tw=10µs 101 7 5 3 2 1ms 100 7 5 3 100µs 10ms DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS , (TYPICAL) VGS=20V 20 10V PD = 275W 6V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 30 20 100ms TC = 25°C Single , ) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 10 20V 0.08 0.06 0.04 0.02 0 10­1 2 3 5 7 100 2 3 5


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FS40SM6

Abstract: No abstract text available
Text: e lest 1 I 12 / 5 \A e V I '-r f / \ \ > P V y r 's , O 2 102 7 5 3 2 101 7 5 3 2 10° 7 5 3 A £ 4TC = 25°C . Single Puise. tw=10^s. 100 1 ms- 10ms I I I 100ms DC 20 16 12 23 5 7101 2 3 5 7102 2 3 57103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT , SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) < — k? II LU y lu o< OT I-±<ü 5 = w S LU , \ 10-1 2 3 5 710° 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) LU I- _ OT ? Z O O m LU £ O > "Ph CE -> O


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PDF FS40SM-6 571Q1 FS40SM6
N mosfet 250v 600A

Abstract: mosfet 200A mosfet 600V 100A mosfet 600v mosfet 100a 600v 3150 mosfet "MOSFET Module" mosfet low idss mosfet j 114 QJQ0220001
Text: Baseplate Low Drive Requirement Internal Series Gate Resistors (6 per chip) Low Rds(on) Fast Diodes ( 5 ) FS40SM-5 Chips per Mosfet Switch (6) H Series 100A 600V Chips per diode NC NC Inches 3.70 3.150 , Current VDS=250V VGE=0 ± 50 5 mA VGS(th) Gate Source Threshold Voltage ID=5mA VDS=VGS 4.0 , =400A 1.85 DIODE V 5 VF Diode Forward Voltage IF=200A Rth(j-c) Thermal Impedance Junction to


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PDF QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v mosfet 100a 600v 3150 mosfet "MOSFET Module" mosfet low idss mosfet j 114 QJQ0220001
fs12km5

Abstract: FS12UM-5 FS12KM FS10KM5 FS12KM-5 FS20KM-6 FS12UM fs20km-5 POWEREX mosfet fs series
Text: Ratings, Tc = 25°C Device Number FS5UM- 5 FS5VS- 5 FS5KM- 5 FS7UM- 5 FS7VS- 5 FS7KM- 5 FS10UM- 5 FS10VS- 5 FS10KM- 5 FS12UM- 5 FS12VS- 5 FS12KM- 5 FS16UM- 5 FS16VS- 5 FS16KM- 5 FS16SM- 5 FS20UM- 5 FS20VS- 5 FS20KM- 5 FS20SM- 5 FS30SM- 5 FS40SM-5 FS5UM-6 FS5VS-6 FS5KM-6 FS10UM-6 FS10VS-6 FS10KM-6 FS16UM-6 FS16VS-6 FS16KM-6 FS16SM-6 FS20UM , 24 24 25 (A) 5 5 5 7 7 7 10 10 10 12 12 12 16 16 16 16 20 20 20 20 30 40 5 5 5 10 10 10 16 16 16 16 20 20 20 20 30 40 3 3 3 5 5 5 10 10 10 10 (W) 60 60 30 75 75 30 90 90 35 100 100 35 125 125 35


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PDF FS10UM-5 FS10VS-5 FS10KM-5 FS12UM-5 FS12VS-5 FS12KM-5 FS16UM-5 FS16VS-5 FS16KM-5 FS16SM-5 fs12km5 FS12KM FS10KM5 FS20KM-6 FS12UM fs20km-5 POWEREX mosfet fs series
AZ102

Abstract: No abstract text available
Text: VDS = OV Conditions Ratings 300 ±30 40 120 275 - 5 5 - +150 - 5 5 ~ +150 4.8 Unit V V A A W °C °c 9 , 45 125 310 140 1, 5 - 12.0 _ - s pF - - - pF pF ns ns ns ns V °C/W - - , 0V li 5 20 V » £ O 1 \ lr 0A z a n oe O o §* I 0.08 LÜ w O uj V. 4UM 0.06 0.04 is Q 0 0 4 V . ?OA Z Î2 « 05 S yy 0.02 0 10-' 2 3 5 7100 2 3 5 7 10' 2 3 5 , (TYPICAL) < o z 32 SS t/ 5 £ 5 24 z > H Q Û Z cc oc UJ <~ CCuj OC < D O


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PDF FS40SM-6 1CK23 AZ102
FS16SM-5

Abstract: FS20KM-6 FS40SM-5 FS20KM5 TO-220FN FS16SM fs20km fs20km-5 mosfet fs series
Text: M ED IU M VOLTAGE POWER MOSFET FS SERIES Max. ratings Type No. FS5UM- 5 FSSVS- 5 FS5KM- 5 FS7UM- 5 FS7VS- 5 FS7KM- 5 FS10UM- 5 FStOVS- 5 FSIOKM- 5 FSI2UM- 5 FS12VS-S FSI2KM- 5 FS16UM- 5 FS16VS- 5 FS16KM- 5 FS16SM- 5 FS20UM- 5 FS20VS- 5 FS20KM- 5 FS20SM- 5 FS30SM- 5 FS40SM-5 FS5UM-6 FS5VS-6 FS5KM-6 FS10UM-6 FStOVS-6 FS10KM , 1KE22ISEÜS2I3HHHHHHI Electrical characteristics (TYP.) " ass ' ^oss ' - ·o . 5 m 60 30 m VtMW , 40 150 250 275 60 30 ±30 0.15 0.19 1400 30 40 5 ±30 ±30 ±30 0.10 0.13 0.066 0.086


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PDF FS10UM-5 FS12VS-S FS16UM-5 FS16VS-5 FS16KM-5 FS16SM-5 FS20UM-5 FS20VS-5 FS20KM-5 FS20SM-5 FS20KM-6 FS40SM-5 FS20KM5 TO-220FN FS16SM fs20km mosfet fs series
2000 - N mosfet 250v 600A

Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Text: Rds(on) Fast Diodes (6) FS40SM-5 Chips per Mosfet Switch (6) H Series 100A 600V Chips per diode , 2.0 V 3.0 4.0 V 11 14.3 m? 0.116 TBD C/W 125 C DIODE V 5


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PDF QJQ0224005 FS40SM-5 N mosfet 250v 600A mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
1998 - mosfet 20a 300v

Abstract: FS40SM-6
Text: DISSIPATION DERATING CURVE 300 0 50 100 150 200 102 7 5 3 2 tw=10µs 101 7 5 3 2 1ms 100 7 5 3 100µs 10ms DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS , (TYPICAL) VGS=20V 20 10V PD = 275W 6V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 30 20 100ms TC = 25°C Single , ) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 10 20V 0.08 0.06 0.04 0.02 0 10­1 2 3 5 7 100 2 3 5


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PDF FS40SM-6 mosfet 20a 300v FS40SM-6
FS12UM-5

Abstract: MARKING CODE mosfet FS12KM FS16UM5 FS20UM-5 FS12KM-5 FS20KM-6 POWEREX mosfet fs series MARKING FY FS16KM-5
Text: ±30 0.10 0.13 3 2100 TO-3P 32 FS40SM-5 250 40 275 ±30 0.066 0.086 3 2850 TO-3P 32 FS5UM-6 300 5 60  , (W) VGSS (V) rOS(oil ,(íl) vGS 5 250 5 60 ±30 1.0 1.3 3 270 TO-220 31 FS5VS- 5 250 5 60 ±30 1.0 1.3 3 270 TO-220S 31 FS5KM- 5 250 5 30 ±30 1.0 1.3 3 270 TO-220FN 31 FS7UM- 5 250 7 75 ±30 0.63 0.80 3 370 TO-220 31 FS7VS- 5 250 7 75 ±30 0.63 0.80 3 370 TO-220S 31 FS7KM- 5 250 7 30 ±30 0.63 0.80 3 370 TO-220FN 31 FS10UM- 5 250 10 90 ±30 0.40


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PDF O-220 O-220S O-220FN FS10UM-5 FS10VS-5 72R4L FS12UM-5 MARKING CODE mosfet FS12KM FS16UM5 FS20UM-5 FS12KM-5 FS20KM-6 POWEREX mosfet fs series MARKING FY FS16KM-5
FS40SM-6

Abstract: No abstract text available
Text: /inquiry. Notice 1. 2. 3. 4. 5 . 6. 7. All information included in this document is , DISSIPATION DERATING CURVE 300 0 50 100 150 200 102 7 5 3 2 tw=10µs 101 7 5 3 2 1ms 100 7 5 3 100µs 10ms DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS , (TYPICAL) VGS=20V 20 10V PD = 275W 6V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 30 20 100ms TC = 25°C Single


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FS10KM12

Abstract: FS10SM16A FS20KM-5 CT40TMH FS7UM16A FS10SM18A FS18SM10 CT60AM-20 FS7UM-16A FX6KM-06
Text: ) FS40SM-5 (0.0860) FS30SM-6 (0.170) FS40SM-6 (0.1140) m u / B a x Powerex, Inc., 200 , (0.240) FS5*J-03 5 (0.170) 0 · O t 0 · O 0 · O 0 · O t 0 · O (0.660) t FS2*J-2 FS02" J-2 FS , 0.3 1 0.3 1 2 (0.280) FS5' *-03 5 0 FS2ASJ-3 · FS2KMJ-3 O FS2UMJ-3 FS2VSJ-3 (0.750) 0 · O , -03 (1.90) t FS1*H-3 (1.250) t FS2*H-06 2 (0.260) FS5*'H-03 5 (0.20) 0 · 0 t 0 · 0 0 · 0 0 · 0 t , -12 (2.60) · FS5KM- 5 O FS5UM- 5 FS5VS- 5 (1.30) · FS7KM- 5 O FS7UM- 5 FS7VS- 5 (0.80) · FS10KM- 5 O FSIO U M - 5


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PDF O-220S CT20VS-8 CT20VSL-8 O-220C O-220F CT20TM-8 CT20AS-8 CT20ASL-8 CT20ASJ-8 CT20VM-8 FS10KM12 FS10SM16A FS20KM-5 CT40TMH FS7UM16A FS10SM18A FS18SM10 CT60AM-20 FS7UM-16A FX6KM-06
m61266

Abstract: M61262 m61260 r2j101 R2s*15102np r2j10160 ha118225f M61266FP m61265sp r2j10160-xxxfp
Text: 1 r 1 Chip TV LCD TV UM ® z » < È gig 5 Si i g » s i 2 2* s M.1 > it I ? s a ss - ï® <» 2 h a if ^ rll S S1 H ® ? + V Sr 33 I g W ^ » ■3 CD 0 01 i1 -o ® T3 "9. O 3 C5 5 S I îiâ» 8 ^ s i 1. K a S' x • «um ■■J^ c co o S Si § O H: 3 co o 3J > CD 5 , ÎF Hm ro » ai y a c 8 .o ÇD CD CD ä < U CO < O CD ( 5 ' 3 SL <2 3 -a n> » CD Ö " S w 5 CD ~L ~a Ô » o I- s CO Dl CL C S) 3 T5 — ô S. s — X ° ro 3 f < 3 CD O CD


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PDF RJJ01 F0006-0400 m61266 M61262 m61260 r2j101 R2s*15102np r2j10160 ha118225f M61266FP m61265sp r2j10160-xxxfp
2004 - H7N1009MD

Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD CR3AS-12 HAT1081R immobilizer antenna cr3as
Text: other loss resulting from the information contained herein. 5 . Renesas Technology Corp. semiconductors , DSCs DC/DC power supplies adapters 10 5 2 Driving small motors Batteries 10 20 50 , MOS FETs RDS(on) typ (m at 16 mm2) 100 50 20 10 5 5th Gen. Planar 100 V 60 V 30 V , ) Competitors A B 1-7 Conduction loss performance RDS(on) at 4.5 V: typ (m) 1 2 3 4 5 Qgd(nC) 5 , HAT2096H HAT2116H HAT2165H 5 HAT2166H HAT2036R HAT2068R HAT2167H 1 y nc cie fi


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PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD CR3AS-12 HAT1081R immobilizer antenna cr3as
M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: 103 2 S C 4 1 5 5 103 2 SC 4155A 103 2 SC4258 103 2 SC4266 104 2 SC4356 104 2S C 4 3 57 102 2 SC4524 103 ¡2 SC4525 2 SC4526 102 1 103 12 SC4624 102 2 SC4838 102 2 SC4989 * * * * 103 2 S C 5 1 25 149 2 S C 5 1 68 149 2 S C 5 1 69 103 2 S C 5 1 7 0 103 2 SC5209 103 2 S C 5 2 10 149 2SC5211 103 2 S C 5 2 12 103 2 S C 5 2 13 103 2 S C 5 2 14 103 2 SC5383 103 2 SC5384 103 2 SC5394 1 49 I2 S C 5 3 95 10212 , 103 2 SD1447 103 2 S D 1972 103 2 S J1 2 5 151 2 S J1 4 5 151 2 S J4 0 103 2 SJ498 103 2 SK.108 104 2


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PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: -1 STD60NH03L-1 STC6NF30V 5 Device Direct ST nearest Device Fairchild FDW2503N FDW2503NZ


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: ···························································································3 to 5 Small Signal Transistors ·································································6 , 11GHz) and high breakdown voltage (VCEO = 5 V) 2.8 Features + 0.10 0.16 ­ 0.06 0.3 2.95 , 15 15 15 15 15 15 15 5 Small Signal Transistors !General Amplification Package TO , Characteristics toff (µs) hFE typ 2 k to 100 k 0.8 From 2 k 0.9 2 k to 10 k - From 4 k - 5 k to 30 k , 15 10.5 5 7.8 4 8.5 6 9 7 10 11 - 9.0 9.0 9.0 3.5 6.0 3.8 2.4 2.9 0.94 1.2


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PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
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