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1996 - Not Available

Abstract:
Text: JULY 1996 FRD05610012E PRELIMINARY DATA DS4373-1.2 FRD05610012E FAST RECOVERY EPITAXIAL DIODE CHIP APPLICATIONS TYPICAL KEY PARAMETERS VRRM 1200V IF 100A trr 112ns s Switch Mode Power Supplies. s Motor Control. s Free Wheel/Antiparallel Diode For Use With IGBT And Other Power , FRD05610012E 1200 Typical chip thickness: 465µm. Tj = 150˚C Wire sizes: 8 ≥ bondwires 300µm à , All ratings given assuming suitble mountdown of chip. 1/2 FRD05610012E THERMAL RATING Symbol


Original
PDF FRD05610012E DS4373-1 112ns
GEC plessey

Abstract:
Text: a i GEC PL E S S E Y S E M I C O N D U C T O R S JULY 1996 DS4373-1.2 FRD05610012E FAST RECOVERY EPITAXIAL DIODE CHIP APPLICATIONS Switch Mode Power Supplies. Motor Control. TYPICAL KEY PARAMETERS V r rm 1200V Free Wheel/Antiparallel Diode For Use With IGBT And Other , - observe static handling precautions. FRD05610012E CURRENT RATING Symbol 'f Forward current , 37LÛ52E DDEfiDbD b47 FRD05610012E THERMAL RATING Symbol Ti Ts, Parameter Junction temperature


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PDF DS4373-1 FRD05610012E 112ns 465nm. 002fl0bl GEC plessey 80505
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