2006 - G3VM-355C
Abstract: G3VM-355CR G3VM-355F G3VM-355FR 355C FR 152 diode
Text: (SPST-NO) 6 5 1 G3VM-355F/ FR 3 2 Actual Mounting Pad Dimensions (Recommended Value, Top View) G3VM-355F/ FR 2.54 8.3 to 8.8 ( 1.52 ) 34 (0.61) ( 1.52 ) 4 1.3 1.5 G3VM-355C/CR/F/ FR G3VM-355C/CR/F/ FR Absolute Maximum Ratings (Ta = 25°C) Item Input Symbol , MOS FET Relays G3VM-355C/CR/F/ FR New MOS FET Relays with Both SPSTNO and SPST-NC Contacts , ) Dimensions Note: All units are in millimeters unless otherwise indicated. G3VM-355C/CR G3VM-355F/ FR
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G3VM-355C/CR/F/FR
G3VM-355xpiration
G3VM-355C
G3VM-355CR
G3VM-355F
G3VM-355FR
355C
FR 152 diode
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FR157
Abstract: No abstract text available
Text: SYMBOLS FR 151 FR 152 FR 153 FR 154 FR 155 FR 156 FR 157 UNITS VRRM , ,sec. 100 KD Diode
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FR151
FR157
DO-15
DO-15
MIL-STD-750,
25RACTERISTICS
FR157
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2015 - Not Available
Abstract: No abstract text available
Text: /μs, VDD ⤠BVDSS, Starting TJ = 25°C 5. The data tested by surface mounted on a 1 inch2 FR -4 board , 1 inch2 FR -4 board with 2 OZ copper. UNISONIC TECHNOLOGIES CO., LTD UNIT °C/W °C/W 2 of , tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage (Note 2) VSD IS=1A, VGS , (Note 2, 3) ISM Body Diode Reverse Recovery Time tRR IF=7A, dI/dt=100A/µs, TJ=25°C Body Diode Reverse Recovery Charge QRR Notes: 1. The data tested by surface mounted on a 1 inch2 FR -4 board with 2
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UTA10R220H
UTA10R220H
UTA10R220HG-S08-R
QW-R209-073
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1N4681
Abstract: 1N4717 MMBZ4681-V MMBZ4717-V MMSZ4681-V MMSZ4717-V
Text: ) Power dissipation Note 1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout , Tj 150 °C Tstg - 55 to + 150 °C Note 1) On FR - 4 or FR - 5 board with minimum , 15.8 0.05 11.4 MMSZ4703-V DN 16 15.2 16.8 0.05 12.1 MMSZ4704-V DP , MMSZ4706-V DU 19 18.1 20 0.05 14.4 MMSZ4707-V DV 20 19 21 0.01 15.2 , 4. Temperature Coefficient of VZ vs. Z-Voltage CD - Diode Capacitance (pF) 200 Tj = 25 °C
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MMSZ4681-V
MMSZ4717-V
DO-35
1N4681
1N4717
OT-23
MMBZ4681-V
MMBZ4717-V
AEC-Q101
2002/95/EC
MMBZ4717-V
MMSZ4717-V
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2008 - VISHAY diode MARKING ED
Abstract: MMSZ4717-V 1N4681 1N4717 DO35 MMBZ4681-V MMBZ4717-V MMSZ4681-V
Text: Table "Characteristics") Power dissipation Note 1) On FR - 4 or FR - 5 board with minimum , °C Tstg Maximum junction temperature - 55 to + 150 °C Note 1) On FR - 4 or FR - 5 , 15.8 0.05 11.4 MMSZ4703-V DN 16 15.2 16.8 0.05 12.1 MMSZ4704-V DP , MMSZ4706-V DU 19 18.1 20 0.05 14.4 MMSZ4707-V DV 20 19 21 0.01 15.2 , Power Dissipation vs. Ambient Temperature 200 CD - Diode Capacitance (pF) VZ - Voltage Change (mV
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MMSZ4681-V
MMSZ4717-V
C/4x10
1N4681.
1N4717
MMBZ4681-V.
MMBZ4717-V
2002/95/EC
2002/96/EC
OD123
VISHAY diode MARKING ED
MMSZ4717-V
1N4681
DO35
MMBZ4681-V
MMBZ4717-V
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2011 - Zener Diode SOD-123 marking code ZC
Abstract: No abstract text available
Text: "Characteristics") Power dissipation TL = 75 °C Ptot 500 1) mW Test conditions Symbol Value Unit Note 1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout Thermal Characteristics Tamb = 25 , temperature Storage temperature range Note 1) On FR - 4 or FR - 5 board with minimum recommended solder pad , 12.9 13.6 14.4 15.2 16.7 18.2 19 20.4 21.2 22.8 25 27.3 29.6 32.6 VZ at IZT = 50 µA V min. 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.27 8.65 9.5 10.5 11.4 12.4 13.3 14.3 15.2
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MMSZ4681-V-G
MMSZ4717-V-G
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
18/10K
10K/box
08/3K
15K/box
Zener Diode SOD-123 marking code ZC
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2010 - Not Available
Abstract: No abstract text available
Text: 75 °C Ptot 500 1) mW Test conditions Symbol Value Unit Note 1) On FR - 4 or FR - 5 board with , Note 1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout Test conditions Symbol , 12.4 13.3 14.3 15.2 16.2 17.1 18.1 19 20.9 22.8 23.8 25.7 26.6 28.5 31.4 34.2 37.1 40.9 max. 2.52 2.84 , 11.4 12.1 12.9 13.6 14.4 15.2 16.7 18.2 19 20.4 21.2 22.8 25 27.3 29.6 32.6 Test voltage at VR V , 1000 200 Tj = 25 °C 100 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) 150 VR = 2
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MMSZ4681-V
MMSZ4717-V
DO-35
1N4681
1N4717
OT-23
MMBZ4681-V
MMBZ4717-V
AEC-Q101
2002/95/EC
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2006 - marking code DN SOT23
Abstract: DO35 MMBZ4681-V 1N4681 1N4717 MMBZ4717-V MMSZ4681-V MMSZ4717-V
Text: "Characteristics") Power dissipation 1) TL = 75 °C On FR - 4 or FR - 5 board with minimum recommended solder , range 1) RthJA 340 Tj 150 °C Tstg - 55 to + 150 °C On FR - 4 or FR - 5 board , 15.2 16.8 0.05 12.1 MMSZ4704-V DP 17 16.2 17.9 0.05 12.9 MMSZ4705-V , MMSZ4707-V 20 19 21 0.01 15.2 DA 22 20.9 23.1 0.01 16.7 MMSZ4709-V DZ , Z-Voltage (V) Figure 4. Temperature Coefficient of Vz vs. Z-Voltage 200 CD - Diode Capacitance (pF
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MMSZ4681-V
MMSZ4717-V
1N4681.
1N4717
MMBZ4681-V.
MMBZ4717-V.
2002/95/EC
2002/96/EC
OD123
08-Apr-05
marking code DN SOT23
DO35
MMBZ4681-V
1N4681
MMBZ4717-V
MMSZ4717-V
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2010 - MMSZ4705-V
Abstract: VISHAY diode MARKING ED MMSZ4688-V VISHAY MARKING ED 1N4681 1N4717 MMBZ4681-V MMBZ4717-V MMSZ4681-V MMSZ4717-V
Text: ) Power dissipation Note 1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout , Tj 150 °C Tstg - 55 to + 150 °C Note 1) On FR - 4 or FR - 5 board with minimum , 15.8 0.05 11.4 MMSZ4703-V DN 16 15.2 16.8 0.05 12.1 MMSZ4704-V DP , MMSZ4706-V DU 19 18.1 20 0.05 14.4 MMSZ4707-V DV 20 19 21 0.01 15.2 , 4. Temperature Coefficient of VZ vs. Z-Voltage CD - Diode Capacitance (pF) 200 Tj = 25 °C
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MMSZ4681-V
MMSZ4717-V
DO-35
1N4681
1N4717
OT-23
MMBZ4681-V
MMBZ4717-V
AEC-Q101
2002/95/EC
MMSZ4705-V
VISHAY diode MARKING ED
MMSZ4688-V
VISHAY MARKING ED
MMBZ4717-V
MMSZ4717-V
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75631SK8
Abstract: pspice model list
Text: . Tpkg NOTES: 1. Tj = 25°C to 150°C. 2. 50°CAV measured using FR -4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second. 3. 152 °C/W measured using FR -4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds 4. 189°C/W measured using FR -4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds 100 , , VGS = 10V (Figure 9) 2 0.033 4 0.039 V n - - 50 °CAV - - 152 189 °C/W , Coss C rss - Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voitage
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HUF75631SK8
MS-012AA
75631SK8
75631SK8
pspice model list
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2006 - CF 02 94Vo
Abstract: characteristics of zener diode in forward bias MMSZ4697G MMSZ4709G MMSZ4692G
Text: MMSZ4687MMSZ4717 SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 1.8 to 43 Volts POWER RATING 500 mWatts FEATURES * * * * * Wide Zener Reverse Voltage Range : 1.8V to 43V 500mW Rating on FR -4 or FR -5 Board , guaranteed Mounting position: Any Weight: 0.01 gram .110(2.80) .102(2.60) .067(1.70) .059(1.50) . 152 , otherwise noted ) RATINGS Max. Power Dissipation on FR -5 Derated above 75OC Board,@TL=75oC (Note 1) SYMBOL , Volts 2007-3 Note 1. FR -5 = 3.5 X 1.5 inches, using the minimum recommended footprint. 2. Thermal
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MMSZ4687MMSZ4717
500mW
OD-123
MIL-STD-202E
CF 02 94Vo
characteristics of zener diode in forward bias
MMSZ4697G
MMSZ4709G
MMSZ4692G
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2010 - MMSZ4689-V
Abstract: mmsz4687-v 1N4681 1N4717 MMBZ4681-V MMBZ4717-V MMSZ4681-V MMSZ4717-V MMSZ4704-V MMSZ4688-V
Text: "Characteristics") Power dissipation Note 1) On FR - 4 or FR - 5 board with minimum recommended solder pad , Tstg Maximum junction temperature - 55 to + 150 °C Note 1) On FR - 4 or FR - 5 board with , 15.8 0.05 11.4 MMSZ4703-V DN 16 15.2 16.8 0.05 12.1 MMSZ4704-V DP , MMSZ4706-V DU 19 18.1 20 0.05 14.4 MMSZ4707-V DV 20 19 21 0.01 15.2 , 4. Temperature Coefficient of VZ vs. Z-Voltage CD - Diode Capacitance (pF) 200 Tj = 25 °C
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MMSZ4681-V
MMSZ4717-V
DO-35
1N4681
1N4717
OT-23
MMBZ4681-V
MMBZ4717-V
AEC-Q101
2002/95/EC
MMSZ4689-V
mmsz4687-v
MMBZ4717-V
MMSZ4717-V
MMSZ4704-V
MMSZ4688-V
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Not Available
Abstract: No abstract text available
Text: MMSZ4681MMSZ4717 SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 2.4 to 43 Volts POWER RATING 500 mWatts FEATURES * * * * * Wide Zener Reverse Voltage Range : 2.4V to 43V 500mW Rating on FR -4 or FR , ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS . 152 (3.85) .140(3.55) .003(.08 , ( @ TA = 25 C unless otherwise noted ) RATINGS Max. Power Dissipation on FR -5 Derated above 75OC , RGJL - - 150 VF - - 0.95 Note 1. FR -5 = 3.5 X 1.5 inches, using the minimum
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MMSZ4681MMSZ4717
500mW
OD-123
MIL-STD-202E
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2006 - CF 02 94Vo
Abstract: No abstract text available
Text: MMSZ4687T1MMSZ4717T1 SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 1.8 to 43 Volts POWER RATING 500 mWatts FEATURES * * * * * Wide Zener Reverse Voltage Range : 1.8V to 43V 500mW Rating on FR -4 or FR , ) . 152 (3.85) .140(3.55) .006(.15) .003(.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS , unless otherwise noted ) RATINGS Max. Power Dissipation on FR -5 Derated above 75OC Board,@TL=75oC (Note 1 , Volts 2007-3 Note 1. FR -5 = 3.5 X 1.5 inches, using the minimum recommended footprint. 2. Thermal
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MMSZ4687T1MMSZ4717T1
500mW
OD-123
MIL-STD-202E
CF 02 94Vo
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2006 - CF 02 94Vo
Abstract: ee marking zener diode TL 494 CN zener diode cm MMSZ4681 MMSZ4682 MMSZ4683 MMSZ4684 MMSZ4685 MMSZ4686
Text: MMSZ4681MMSZ4717 SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 2.4 to 43 Volts POWER RATING 500 mWatts FEATURES * * * * * Wide Zener Reverse Voltage Range : 2.4V to 43V 500mW Rating on FR -4 or FR , (1.70) .059(1.50) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS . 152 (3.85) .140(3.55) .003 , MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Max. Power Dissipation on FR -5 Derated , o C/W RqJL - - 150 VF - - 0.95 Note 1. FR -5 = 3.5 X 1.5 inches, using
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MMSZ4681MMSZ4717
500mW
OD-123
MIL-STD-202E
CF 02 94Vo
ee marking zener diode
TL 494 CN
zener diode cm
MMSZ4681
MMSZ4682
MMSZ4683
MMSZ4684
MMSZ4685
MMSZ4686
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2007 - Not Available
Abstract: No abstract text available
Text: transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Tj=55°C Rds , Qgd Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge NOTE , 5.5 15.2 3.8 8.0 23.0 ns ns ns 3.7 15.5 7.1 5.5 21.0 ns ns nC 1. The value of Rθja is measured with the device mounted on 1in² FR -4 board of 2oz. Copper, in still air , ² FR -4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a
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ELM13434CA-S
ELM13434CA-S
10sec
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2007 - ST T4 1060
Abstract: K822 Transistor k822
Text: ) Total dissipation at TC = 25°C Derating factor Value 25 ± 16 ± 18 38 23.75 152 5.2 0.0416 -55 to 150 , . Continuous mode 2. Guaranteed for test time < 15ms 3. Pulse width limited by package 4. When mounted on FR , on FR -4 board of 1inch2 , 2 oz Cu and 10sec 2. Steady state 3. Measured at Source pin when the device is mounted on FR -4 board in steady state 3/12 Electrical characteristics STK822 2 , Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current
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STK822
2002/95/EC
ST T4 1060
K822
Transistor k822
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2008 - Not Available
Abstract: No abstract text available
Text: dissipation at TC = 25°C Derating factor Value 30 ± 20 38 23.75 152 5.2 0.0416 TBD -55 to 150 Unit V V A A A W , temperature 1. When mounted on FR -4 board of 1inch2, 2 oz. Cu. and 10sec 2. Pulse width limited by package , . When mounted on FR -4 board of 1inch2, 2 oz. Cu. and 10sec 2. Steady State 3. Measured at Source pin when the device is mounted on FR -4 board in steady state 3/13 Electrical characteristics , . Unit ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain
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STK38N3LLH5
STK38N3LLH5
2002/95/EC
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2007 - ST T4 1060
Abstract: K822 JESD97 STK822 Transistor k822
Text: current (pulsed) 152 A Total dissipation at TC = 25°C 5.2 W 0.0416 W/°C -55 to 150 , . When mounted on FR -4 board of 1inch2 , 2 oz Cu and 10sec Table 2. Thermal data Symbol , resistance junction-case (source) 2.2 2.7 °C/W 1. When mounted on FR -4 board of 1inch2 , 2 oz Cu and 10sec 2. Steady state 3. Measured at Source pin when the device is mounted on FR -4 board in , =4.7, VGS=4.5V (see Figure 5) ns ns Tbd Tbd (see Figure 5) ns ns Source drain diode
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STK822
2002/95/EC
ST T4 1060
K822
JESD97
STK822
Transistor k822
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2007 - Not Available
Abstract: No abstract text available
Text: current (pulsed) 152 A Total dissipation at TC = 25°C 5.2 W 0.0416 W/°C -55 to , package 4. When mounted on FR -4 board of 1inch2 , 2 oz Cu and â¤10sec Table 2. Thermal data , ) Thermal resistance junction-case (source) 2.2 2.7 °C/W 1. When mounted on FR -4 board of , on FR -4 board in steady state 3/11 Electrical characteristics 2 STK822 Electrical , Tbd (see Figure 4) ns ns Source drain diode Parameter Test conditions VSD (2
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STK822
2002/95/EC
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Not Available
Abstract: No abstract text available
Text: range: 18 MHz to 105 MHz â Output configurations: 3 outputs at V2 fR EF 3 outputs at fR F E 4 outputs at fR ef with adjustable phase or 2 outputs at fR F E TriQuintâs G A 1088 is a , frequency, fREF. When one of the 4 outputs at 2 x fR ef 4 outputs at 2 x fR ef with adjustable phase , ) to the t= â Ãâ feedback clock (FBIN), maintaining a zero frequency difference ( fR E F , +6 f REF f REF -ä-12 fR EF+ à 1 1 1 +8 f REF fR EF+ 16 fR EF+ Ã
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OCR Scan
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GA1088
11-Output
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d2s diode series
Abstract: CTX50-1-52 MOTOROLA-1N5819 UPL1V101MPH dn472 DN-47 D2S DIODE schottky LT1172 MUR110 DN47-1
Text: , C5, C6 = NICHICON - UPL1C101MAH L1 = COILTRONICS - CTX50- 1-52 L2, L3 = COILTRONICS - CTX5-2- FR V0UT = , induces a change in voltage across the inductor causing the Vsw pin to rise until output diode D1 forward , LinCAB TECHNOLOGY DN47-1 Trace D is the diode 's current waveform. The diode provides a current path , . When the diode is reverse biased, the output capacitor provides the load current. The LT1172's error , and trace G is its current. The voltage across 02 will be equal to a diode drop above +Vqut minus a
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RS-232
100mA
100nF
MUR110
150mV,
MOTOROLA-1N5819
VN2222LL
NICHIC0N-UPL1A101MAH
UPL1V101MPH
CTX50-1-52
d2s diode series
CTX50-1-52
dn472
DN-47
D2S DIODE schottky
LT1172
MUR110
DN47-1
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Not Available
Abstract: No abstract text available
Text: Drain Current 107 IDM C TA=25° A 440 11.5 IDSM TA=70° C V 152 ID C , VGS=6V, ID=20A TO262 Static Drain-Source On-Resistance gFS Forward Transconductance Diode Forward Voltage 6.2 5.6 7.3 m⦠1 V 152 A 70 0.66 DYNAMIC PARAMETERS Ciss , Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs IF=20A, dI/dt
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AOW2500
AOW2500
O-262
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2013 - Not Available
Abstract: No abstract text available
Text: 107 A 440 11.5 IDSM TA=70° C Units V 152 IDM TA=25° C S ±20 ID , =20A TO263 5.1 6.2 m⦠VGS=6V, ID=20A TO263 5.6 7.3 m⦠1 V 152 A , Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS TJ=125° C Maximum , trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt , =3⦠ns 90 ns nC 1090 A. The value of RθJA is measured with the device mounted on 1in2 FR
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AOT2500L/AOB2500L
AOT2500L/AOB2500L
O-263
ViewOB2500L
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Not Available
Abstract: No abstract text available
Text: 107 A 440 11.5 IDSM TA=70° C Units V 152 IDM C TA=25° S ±20 ID , =20A TO263 5.1 6.2 m⦠VGS=6V, ID=20A TO263 5.6 7.3 m⦠1 V 152 A , Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS C TJ=125° Maximum , Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs , =3⦠ns 90 ns nC 1090 A. The value of RθJA is measured with the device mounted on 1in2 FR
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AOT2500L/AOB2500L
AOT2500L/AOB2500L
O-263
ViewOB2500L
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