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    FQU1N80TU MOSFET N-CH 800V 1A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    Digi-Key FQU1N80TU Tube 4,932 1 $0.94 $0.836 $0.6518 $0.42511 $0.39677 Buy Now
    Avnet Americas FQU1N80TU Tube 4 Weeks 849 - - - $0.42422 $0.38887 Buy Now
    Farnell FQU1N80TU Tube 43 Weeks, 1 Days 5,040 - - - - £0.365 Buy Now
    Rochester Electronics LLC
    FQU1N80TU MOSFET N-CH 800V 1A I-PAK
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    Digi-Key FQU1N80TU Bulk 1 $1 $1 $1 $1 $1 Buy Now
    Fairchild Semiconductor Corporation
    FQU1N80TU Power Field-Effect Transistor, 1A, 800V, 20ohm, N-Channel, MOSFET, TO-251
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    Rochester Electronics FQU1N80TU 6,023 $0.4297 $0.4297 $0.4039 $0.3652 $0.3652 Buy Now

    FQU1N80 datasheet (2)

    Part ECAD Model Manufacturer Description Type PDF
    FQU1N80 Fairchild Semiconductor 800 V N-Channel MOSFET Original PDF
    FQU1N80TU Fairchild Semiconductor Power MOSFET Original PDF

    FQU1N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags
    2009 - Not Available

    Abstract: No abstract text available
    Text: FQD1N80 / FQU1N80 N-Channel QFET® MOSFET April 2013 FQD1N80 / FQU1N80 800 V, 1.0 A, 20 , Current - Pulsed (Note 1) FQD1N80 / FQU1N80 800 1.0 0.63 4.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3 , . FQD1N80 / FQU1N80 2.78 50 110 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation FQD1N80 / FQU1N80 Rev. C0 www.fairchildsemi.com FQD1N80 / FQU1N80 N-Channel QFET® MOSFET Electrical Characteristics Symbol Parameter TC


    Original     		PDF FQD1N80 FQU1N80 FQU1N80
    2009 - FAIRCHILD FQD DPAK

    Abstract: FQD1N80 FQU1N80
    Text: QFET ® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These , ( typical 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability FQD1N80 / FQU1N80 , FQD1N80 / FQU1N80 800 Units V 1.0 A - Continuous (TC = 100°C) 0.63 A 4.0 A , - - -100 nA 3.0 - 5.0 FQD1N80 / FQU1N80 Electrical Characteristics V , Rev. A3. January 2009 FQD1N80 / FQU1N80 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V


    Original     		PDF FQD1N80 FQU1N80 FAIRCHILD FQD DPAK FQU1N80
    2009 - Not Available

    Abstract: No abstract text available
    Text: 2500 units FQU1N80TU FQU1N80 I-PAK Tube N/A N/A 70 units Part Number , FQD1N80 / FQU1N80 N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω Description Features This , / FQU1N80TU 800 Unit V 1.0 IDM Drain Current VGSS EAS Single Pulsed Avalanche Energy , Thermal Characteristics Symbol RJC RJA Parameter FQD1N80TM / FQU1N80TU Thermal , ), Max. ©2009 Fairchild Semiconductor Corporation FQD1N80 / FQU1N80 Rev. C2 1 oC/W 50


    Original     		PDF FQD1N80 FQU1N80
    2001 - Not Available

    Abstract: No abstract text available
    Text: FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General , (Note 1) FQD1N80 / FQU1N80 800 1.0 0.63 4.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A , ) ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQD1N80 / FQU1N80 Electrical , temperature ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQD1N80 / FQU1N80 Typical , / FQU1N80 Typical Characteristics (Continued) 1.2 3.0 2.5 BV DSS , (Normalized


    Original     		PDF FQD1N80 FQU1N80 FQU1N80TU O-251 FQU1N80
    2001 - Not Available

    Abstract: No abstract text available
    Text: FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General , (Note 1) FQD1N80 / FQU1N80 800 1.0 0.63 4.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A , ) ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQD1N80 / FQU1N80 Electrical , temperature ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQD1N80 / FQU1N80 Typical , / FQU1N80 Typical Characteristics (Continued) 1.2 3.0 2.5 BV DSS , (Normalized


    Original     		PDF FQD1N80 FQU1N80 FQD1N80TF O-252 FQD1N80TM
    2001 - FQU1N80

    Abstract: FQD1N80
    Text: QFET TM FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These , - Continuous (TC = 25°C) Drain Current FQD1N80 / FQU1N80 800 Units V 1.0 A - , Corporation Rev. A1. May 2001 FQD1N80 / FQU1N80 May 2001 Symbol TC = 25°C unless otherwise , Rev. A1. May 2001 FQD1N80 / FQU1N80 Electrical Characteristics FQD1N80 / FQU1N80 Typical , Rev. A1. May 2001 FQD1N80 / FQU1N80 Typical Characteristics (Continued) 3.0 1.2 RDS


    Original     		PDF FQD1N80 FQU1N80 FQU1N80
    2008 - Not Available

    Abstract: No abstract text available
    Text: FQD1N80 / FQU1N80 October 2008 QFET 800V N-Channel MOSFET General Description These , / FQU1N80 Features · · · · · · 1.0A, 800V, RDS(on) = 20 @VGS = 10 V Low gate charge ( typical 5.5nC) Low , Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD1N80 / FQU1N80 800 1.0 0.63 4.0 ± 30 (Note 2 , (PCB Mount) ©2008 Fairchild Semiconductor Corporation Rev. A2. October 2008 FQD1N80 / FQU1N80 , FQD1N80 / FQU1N80 Typical Characteristics 0 10 ID, Drain Current [A] ID, Drain Current [A


    Original     		PDF FQD1N80 FQU1N80 FQU1N80
    2009 - Not Available

    Abstract: No abstract text available
    Text: QFET ® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These , FQD1N80 / FQU1N80 January 2009 • RoHS Compliant D D   G S I-PAK D-PAK FQD , °C) Drain Current FQD1N80 / FQU1N80 800 Units V 1.0 A - Continuous (TC = 100°C) IDM , Semiconductor Corporation Rev. A3. January 2009 FQD1N80 / FQU1N80 Electrical Characteristics FQD1N80 / FQU1N80 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0


    Original     		PDF FQD1N80 FQU1N80 20out
    fairchild mosfet selection guide

    Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
    Text: 800 1.95 31 10 800 2.6 25 10 800 3.6 19 10 800 5 15 10 FQU2N80 800 6.3 12 10 FQU1N80 800 20 5.5 10 900


    Original     		PDF Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
    EPAC-500

    Abstract: caterpillar PFC 2.5kw fan4822 FM1233 GENSET system regenerative battery 74LVX4245 FDG901D fuel cell stationary
    Text: ) FQU1N80 ­ 800V/1A; 20m; TO-251 (I-pak) Voltage Translation Utilizing Low Voltage Logic Functions ·


    Original     		PDF 48Vdc, EPAC-500 caterpillar PFC 2.5kw fan4822 FM1233 GENSET system regenerative battery 74LVX4245 FDG901D fuel cell stationary
    ASCOM rectifier 48V

    Abstract: ASCOM rectifier wilmore 1702 ASCOM powerone 48v rectifier octal optocoupler EMERSON rectifier wilmore ELECTRONICS 48V dc poe wilmore
    Text: SSU1N60B ­ 600V/0.9A; 12m; TO-251 (I-pak) FQU1N80 ­ 800V/1A; 20m; TO-251 (I-pak) Voltage Translation


    Original     		PDF
    2002 - IRFU210A

    Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    Text: 800 Single 6.3 - - - 12 1.8 50 FQU1N80 800 Single 20 - -


    Original     		PDF O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: STP9NK65Z KHB1D2N80D/I FQD/ FQU1N80 STD1NB80 KHB4D0N80P1/F1 IRFBE30 FQP(F)4N80 STP4NB80


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    2005 - IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: HUFA7510S3S HUFA75307D3 STP24NF10 Fairchild FQU13N06 FQU13N06L FQU17P06 FQU1N60 FQU1N60C FQU1N80


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: No file text available


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: FQU2N80 800 Single 6.3 ­ ­ ­ 12 1.8 50 FQU1N80 800 Single 20 ­


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: 600 SSU1N60B 600 FQU2N80 800 FQU1N80 800 FQU2N90 900 TO-251 (IPAK) P-Channel FQU3P50 -500


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    2003 - FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: FQU1N60 600 SSU1N60B 600 FQU2N80 800 FQU1N80 800 FQU2N90 900 TO-251(IPAK) P-Channel FQU3P50


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: No file text available


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    2004 - thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: ­ ­ ­ ­ ­ ­ ­ ­ 12.5 5 5.9 12 1.8 1 0.9 1.8 44 30 28 50 FQU1N80


    Original     		PDF
    2011 - FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: No file text available


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

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