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FQU17P06TU MOSFET P-CH 60V 12A IPAK
FQU17P06TU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Digi-Key FQU17P06TU Tube 0 1 $1.19 $1.066 $0.8311 $0.54202 $0.46253 Buy Now
Avnet Americas FQU17P06TU Tube 0 5,040 - - - - $0.49275 Buy Now
Newark (2) FQU17P06TU Bulk 0 1 $1.19 $1.07 $0.832 $0.549 $0.477 Buy Now
FQU17P06TU Bulk 0 490 - - $0.722 $0.509 $0.48 Buy Now
RS (2) FQU17P06TU Tube 0 5 - $1.283 $1.126 $1.126 $1.126 Buy Now
FQU17P06TU Package 0 5 - $1.283 $1.126 $1.126 $1.126 Buy Now
Avnet Asia FQU17P06TU 0 5,040 - - - - - Get Quote
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Avnet Europe FQU17P06TU 11 52 Weeks, 2 Days 1 - - - - - Get Quote
element14 Asia-Pacific FQU17P06TU Each 0 1 $2.38 $2.14 $1.68 $1.15 $1.15 Buy Now
Farnell FQU17P06TU Each 0 51 Weeks, 1 Days 1 £1.31 £1.18 £0.915 £0.756 £0.756 Buy Now
Rochester Electronics LLC
FQU17P06TU POWER FIELD-EFFECT TRANSISTOR, 1
FQU17P06TU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Digi-Key FQU17P06TU Bulk 0 - - - - - Buy Now
Fairchild Semiconductor Corporation
FQU17P06TU Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
FQU17P06TU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
ComS.I.T. USA FQU17P06TU 2,418 - - - - - Get Quote

FQU17P06 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
FQU17P06 FQU17P06 ECAD Model Fairchild Semiconductor 60 V P-Channel MOSFET Original PDF
FQU17P06TU FQU17P06TU ECAD Model Fairchild Semiconductor 60V P-Channel QFET Original PDF
FQU17P06TU_NL FQU17P06TU_NL ECAD Model Fairchild Semiconductor 60V P-Channel QFET Original PDF

FQU17P06 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - Not Available

Abstract: No abstract text available
Text: FQD17P06 / FQU17P06 P-Channel QFET® MOSFET - 60 V, - 12 A, 135 mΩ Description Features , / FQU17P06 -60 Drain Current - Pulsed Unit V -12 - Continuous (TC = 100°C) IDM D A , -7.0 2.5 mJ V/ns W 44 0.35 -55 to +150 W W/°C °C 300 °C FQD17P06 / FQU17P06 , (PCB Mount) ©2001 Fairchild Semiconductor Corporation FQD17P06/ FQU17P06 Rev.C0 1 www.fairchildsemi.com FQD17P06/ FQU17P06 P-Channel QFET® MOSFET June 2013 Symbol TC = 25°C unless


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PDF FQD17P06 FQU17P06
2001 - Not Available

Abstract: No abstract text available
Text: FQD17P06 / FQU17P06 P-Channel QFET® MOSFET - 60 V, - 12 A, 135 mΩ Description Features , Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD17P06 / FQU17P06 -60 Drain Current , V/ns W 44 0.35 -55 to +150 W W/°C °C 300 °C FQD17P06 / FQU17P06 2.85 Unit , ) ©2001 Fairchild Semiconductor Corporation FQD17P06/ FQU17P06 Rev.C1 1 www.fairchildsemi.com FQD17P06/ FQU17P06 P-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted


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PDF FQD17P06 FQU17P06
2001 - Not Available

Abstract: No abstract text available
Text: Quantity 2500 units FQU17P06TU FQU17P06 IPAK Tube N/A N/A 70 units Electrical , FQD17P06 / FQU17P06 P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ Description Features , °C) Drain Current FQD17P06 / FQU17P06 -60 Unit V -12 A - Continuous (TC = 100°C) IDM , , Junction-to-Case, Max. FQD17P06 / FQU17P06 2.85 Unit RθJA RθJA Thermal Resistance, Junction to , ) ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C2 1 www.fairchildsemi.com


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PDF FQD17P06 FQU17P06
2001 - Not Available

Abstract: No abstract text available
Text: Quantity 2500 units FQU17P06TU FQU17P06 IPAK Tube N/A N/A 70 units Electrical , FQD17P06 / FQU17P06 P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ Description Features , °C) Drain Current FQD17P06 / FQU17P06 -60 Unit V -12 A - Continuous (TC = 100°C) IDM , , Junction-to-Case, Max. FQD17P06 / FQU17P06 2.85 Unit RθJA RθJA Thermal Resistance, Junction to , ) ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 1 www.fairchildsemi.com


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PDF FQD17P06 FQU17P06
2001 - FQD17P06

Abstract: FQU17P06
Text: QFET TM FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD17P06 / FQU17P06 -60 , Fairchild Semiconductor Corporation Rev. A2. May 2001 FQD17P06 / FQU17P06 May 2001 Symbol TC , Rev. A2. May 2001 FQD17P06 / FQU17P06 Elerical Characteristics FQD17P06 / FQU17P06 , Voltage FQD17P06 / FQU17P06 Typical Characteristics 1.0 Notes : 1. VGS = 0 V 2. ID = -250


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PDF FQD17P06 FQU17P06 FQU17P06
2009 - fqd17p06

Abstract: No abstract text available
Text: FQD17P06 / FQU17P06 January 2009 QFET ® FQD17P06 / FQU17P06 60V P-Channel MOSFET , Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD17P06 / FQU17P06 -60 -12 -7.6 -48 , . A3.January 2009 FQD17P06 / FQU17P06 Elerical Characteristics Symbol Parameter TC = 25°C unless , Corporation Rev. A3.January 2009 FQD17P06 / FQU17P06 Typical Characteristics 10 1 -I D , Corporation Rev. A3. Januaary 2009 FQD17P06 / FQU17P06 Typical Characteristics (Continued) 1.2


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PDF FQD17P06 FQU17P06
2001 - FQD17P06TM

Abstract: FQD17P06TF
Text: FQD17P06 / FQU17P06 May 2001 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General , Current - Pulsed (Note 1) FQD17P06 / FQU17P06 -60 -12 -7.6 -48 ± 25 (Note 2) (Note 1) (Note 1) (Note , Fairchild Semiconductor Corporation Rev. A2. May 2001 FQD17P06 / FQU17P06 Elerical Characteristics , FQD17P06 / FQU17P06 Typical Characteristics 10 1 -I D , Drain Current [A] -I D, Drain , FQD17P06 / FQU17P06 Typical Characteristics (Continued) 1.2 2.5 -BV DSS , (Normalized


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PDF FQD17P06 FQU17P06 FQD17P06TF FQD17P06TM O-252 FQD17P06TM
2009 - Not Available

Abstract: No abstract text available
Text: 3.-6 Æ FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These , / FQU17P06 -60 Units V -12 A - Continuous (TC = 100°C) IDM Drain Current VGSS Single , FQD17P06 / FQU17P06 January 9 Symbol TC = 25°C unless otherwise noted Parameter Test , FQD17P06 / FQU17P06 Elerical Characteristics On Characteristics VGS(th) Gate Threshold Voltage , Corporation Rev. A3.January 2009 FQD17P06 / FQU17P06 Typical Characteristics VGS - 15.0 V - 10.0


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PDF FQD17P06 FQU17P06
2009 - FQD17P06

Abstract: FQU17P06
Text: QFET ® FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD17P06 / FQU17P06 -60 , Fairchild Semiconductor Corporation Rev. A3.January 2009 FQD17P06 / FQU17P06 January 2009 , 0 V - - 100 nA Zero Gate Voltage Drain Current FQD17P06 / FQU17P06 Elerical , temperature ©2009 Fairchild Semiconductor Corporation Rev. A3.January 2009 FQD17P06 / FQU17P06


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PDF FQD17P06 FQU17P06 FQU17P06
2001 - Not Available

Abstract: No abstract text available
Text: Product Folder - Fairchild P/N FQU17P06 - 60V P-Channel QFET FQU17P06TU Full Production $0.58 , FQD17P06 / FQU17P06 May 2001 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General , Current - Pulsed (Note 1) FQD17P06 / FQU17P06 -60 -12 -7.6 -48 ± 25 (Note 2) (Note 1) (Note 1) (Note , Fairchild Semiconductor Corporation Rev. A2. May 2001 FQD17P06 / FQU17P06 Elerical Characteristics , FQD17P06 / FQU17P06 Typical Characteristics 10 1 -I D , Drain Current [A] -I D, Drain


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PDF FQD17P06 FQU17P06 FQU17P06 FQU17P06TU O-251
2001 - Not Available

Abstract: No abstract text available
Text: FQD17P06 / FQU17P06 May 2001 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General , Current - Pulsed (Note 1) FQD17P06 / FQU17P06 -60 -12 -7.6 -48 ± 25 (Note 2) (Note 1) (Note 1) (Note , Fairchild Semiconductor Corporation Rev. A2. May 2001 FQD17P06 / FQU17P06 Elerical Characteristics , FQD17P06 / FQU17P06 0.40 0.36 RDS(on) [ ], Drain-Source On-Resistance 0.32 0.28 0.24 0.20 0.16 , Rev. A2. May 2001 VD VD 1 FQD17P06 / FQU17P06 Typical Characteristics (Continued


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PDF FQD17P06 FQU17P06
2000 - fqd17p06

Abstract: No abstract text available
Text: FQD17P06 / FQU17P06 September 2000 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General , Current - Pulsed (Note 1) FQD17P06 / FQU17P06 -60 -12 -7.6 -48 ± 25 (Note 2) (Note 1) (Note 1) (Note , Fairchild Semiconductor International Rev. A, September 2000 FQD17P06 / FQU17P06 Elerical , FQD17P06 / FQU17P06 Typical Characteristics 10 1 -I D , Drain Current [A] -I D, Drain , FQD17P06 / FQU17P06 Typical Characteristics (Continued) 1.2 2.5 -BV DSS , (Normalized


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PDF FQD17P06 FQU17P06
2000 - FQD17P06

Abstract: FQU17P06
Text: QFET TM FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD17P06 / FQU17P06 -60 , Fairchild Semiconductor International Rev. A1, January 2001 FQD17P06 / FQU17P06 January 2001 , International Rev. A1, January 2001 FQD17P06 / FQU17P06 Elerical Characteristics FQD17P06 / FQU17P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V


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PDF FQD17P06 FQU17P06 FQU17P06
fairchild mosfet selection guide

Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
Text: 4.25 20 10 900 5.8 15 10 FQU2N90 900 7.2 12 10 -60 0.026 84 -10 -60 0.7 33 -10 -60 0.12 21 -10 FQU17P06


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PDF Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
2002 - IRFU210A

Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
Text: - - - 9 2.8 20 FQU17P06 -60 Single 0.135 - - - 21 12 44


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PDF O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Text: FQT7N10L FQU10N20 FQU10N20L FQU13N06L FQU14N15 FQU16N15 FQU17N08 FQU17P06 FQU1N60 FQU1P50 FQU20N06


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PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: HUFA7510S3S HUFA75307D3 STP24NF10 Fairchild FQU13N06 FQU13N06L FQU17P06 FQU1N60 FQU1N60C FQU1N80


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: FQU8P10 -100 SFU9120 -100 FQU17P06 -60 SFU9034 -60 FQU11P06 -60 SFU9024 -60 SFU2955 -60


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PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Text: FQU17P06 -60 Single 0.135 ­ ­ ­ 21 12 44 SFU9034 -60 Single 0.14


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PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: SFU9120 -100 FQU5P10 -100 IRFU9110 -100 SFU9110 -100 FQU17P06 -60 SFU9034 -60 FQU11P06 -60


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: No file text available


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PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: No file text available


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PDF
2010 - schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: No file text available


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PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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