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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
FQU13N06LTU ON Semiconductor Avnet - $0.30 $0.29
FQU13N06LTU ON Semiconductor Newark element14 895 $0.89 $0.34
FQU13N06LTU Fairchild Semiconductor Corporation Rochester Electronics 10,080 $0.71 $0.57
FQU13N06LTU ON Semiconductor Chip1Stop 711 $2.18 $0.50
FQU13N06LTU ON Semiconductor Chip1Stop 1,314 $0.58 $0.40
FQU13N06LTU ON Semiconductor element14 Asia-Pacific 895 $1.10 $0.41
FQU13N06LTU ON Semiconductor Farnell element14 1,374 £0.57 £0.39
FQU13N06LTU Fairchild Semiconductor Corporation New Advantage Corporation 8,897 - -
FQU13N06LTU_WS ON Semiconductor Avnet - $0.69 $0.59
FQU13N06LTU-WS ON Semiconductor Chip1Stop 5,040 $1.17 $0.36

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FQU13N06L datasheet (4)

Part Manufacturer Description Type PDF
FQU13N06L Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF
FQU13N06LTU Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF
FQU13N06LTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 11A IPAK Original PDF
FQU13N06LTU_WS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 11A IPAK Original PDF

FQU13N06L Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N06L / FQU13N06L N-Channel QFET® MOSFET 60 V, 11 A, 115 mΩ Description This , Drain-Source Voltage - Continuous (TC = 25°C) Drain Current ! " FQD13N06L / FQU13N06L 60 11 - , FQD13N06L / FQU13N06L 4.5 Unit °C/W dv/dt PD TJ, TSTG TL - Pulsed (Note 1) ± 20 , Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C1 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted Parameter


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PDF FQD13N06L FQU13N06L
2000 - FQD13N06L

Abstract: FQU13N06L
Text: FQD13N06L / FQU13N06L April 2000 QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel , Current FQD13N06L / FQU13N06L Drain-Source Voltage - Continuous (TC = 25°C) Drain Current V , temperature ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQD13N06L / FQU13N06L , . Drain Current and Gate Voltage Capacitance [pF] FQD13N06L / FQU13N06L Typical Characteristics , ) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage FQD13N06L / FQU13N06L


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PDF FQD13N06L FQU13N06L FQU13N06L
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N06L / FQU13N06L N-Channel QFET® MOSFET 60 V, 11 A, 115 mΩ Description This , Continuous (TC = 25°C) Drain Current ! " FQD13N06L / FQU13N06L 60 11 - Continuous (TC = 100 , / FQU13N06L 4.5 Unit °C/W dv/dt PD TJ, TSTG TL - Pulsed (Note 1) ± 20 (Note 3 , Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C2 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted Parameter


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PDF FQD13N06L FQU13N06L
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N06L / FQU13N06L N-Channel MOSFET March 2013 N-Channel QFET MOSFET 60 V, 11 A, 115 m Description FQD13N06L / FQU13N06L This N-Channel enhancement mode power MOSFET is produced using , TC = 25°C unless otherwise noted S FQD13N06L / FQU13N06L 60 11 7 Parameter Drain-Source Voltage , (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C0 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel MOSFET Electrical Characteristics Symbol Parameter TC =


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PDF FQD13N06L FQU13N06L FQU13N06L
2009 - FQD13N06L

Abstract: FQU13N06L A2JA
Text: QFET ® FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , / FQU13N06L January 2009 D ! " G S I-PAK D-PAK FQD Series G D S ! " " " G , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD13N06L / FQU13N06L 60 , 17 23 FQD13N06L / FQU13N06L Electrical Characteristics pF ns IDSS IGSSF IGSSR , Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD13N06L / FQU13N06L Typical


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PDF FQD13N06L FQU13N06L FQU13N06L A2JA
2001 - Not Available

Abstract: No abstract text available
Text: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS


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PDF FQD13N06L FQU13N06L FQD13N06LTM FQD13N06LTF O-252
2009 - Not Available

Abstract: No abstract text available
Text: QFET ® FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , FQD13N06L / FQU13N06L January 2009 D   G S I-PAK D-PAK FQD Series G D S   , / FQU13N06L 60 Units V 11 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS , 95 125 pF - 17 23 FQD13N06L / FQU13N06L Electrical Characteristics pF ns , . January 2009 FQD13N06L / FQU13N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5


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PDF FQD13N06L FQU13N06L
2001 - Not Available

Abstract: No abstract text available
Text: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS


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PDF FQD13N06L FQU13N06L
2000 - Not Available

Abstract: No abstract text available
Text: C unless otherwise noted. FQD13N06LTM / FQU13N06LTU FQU13N06LTU_WS Parameter Drain-Source , and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FQU13N06LTU FQU13N06L I-PAK Tube N/A N/A 70 units FQU13N06LTU_WS FQU13N06LS I-PAK Tube N/A N/A , FQU13N06LTU_WS Parameter Thermal Resistance, Junction to Case, Max. 4.5 Thermal Resistance, Junction to , www.fairchildsemi.com FQD13N06L / FQU13N06L — N-Channel QFET® MOSFET Mechanical Dimensions FQU13N06LTU


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PDF FQD13N06L FQU13N06L
2001 - Not Available

Abstract: No abstract text available
Text: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS


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PDF FQD13N06L FQU13N06L FQU13N06L FQU13N06LTU O-251
2001 - FQD13N06L

Abstract: FQU13N06L
Text: QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , = 25°C) Drain Current FQD13N06L / FQU13N06L 60 Units V 11 A - Continuous (TC = 100 , . May 2001 FQD13N06L / FQU13N06L May 2001 Symbol TC = 25°C unless otherwise noted , FQD13N06L / FQU13N06L Electrical Characteristics FQD13N06L / FQU13N06L Typical Characteristics , / FQU13N06L Typical Characteristics 1.5 1.0 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9


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PDF FQD13N06L FQU13N06L FQU13N06L
2009 - Not Available

Abstract: No abstract text available
Text: FQD13N06 / FQU13N06 March 2013 N-Channel QFET MOSFET 60 V, 11 A, 115 m Description FQD13N06L / FQU13N06L This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC


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PDF FQD13N06 FQU13N06 FQD13N06L FQU13N06L
2002 - IRFU210A

Abstract: IRFU230A ISL9N306AD3 FDU7030BL FDU6692 FDU6680A FDU6644 FDU6612A irfu410a FDU6030BL
Text: 0.107 - - 9.4 12 38 FQU13N06L 60 Single 0.11 0.14@5V - - 4.8


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PDF O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A ISL9N306AD3 FDU7030BL FDU6692 FDU6680A FDU6644 FDU6612A irfu410a FDU6030BL
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
Text: FQT7N10L FQU10N20 FQU10N20L FQU13N06L FQU14N15 FQU16N15 FQU17N08 FQU17P06 FQU1N60 FQU1P50 FQU20N06


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PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: HUFA7510S3S HUFA75307D3 STP24NF10 Fairchild FQU13N06 FQU13N06L FQU17P06 FQU1N60 FQU1N60C FQU1N80


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
Text: FQU20N06 60 HUF76409D3 60 HUFA76409D3 60 HUF76407D3 60 HUFA76407D3 60 FQU13N06L 60 FQU13N06 60


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PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
Text: Single 0.092 0.107 ­ ­ 9.4 12 38 FQU13N06L 60 Single 0.11 0.14@5V


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PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Text: FQU20N06 60 HUF76407D3 60 HUFA76407D3 60 FQU13N06L 60 FQU13N06 60 FDU3580 80 FQU24N08 80


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 Diode 1N4001 50V 1.0A DO-41 Rectifier Diode BZX85C6V8 SPICE MODEL K*D1691 make SMPS inverter welding machine 1N5402 spice model transistor KSP44 tip122 tip127 mosfet audio amp
Text: 9.4 18 12 12 49 38 38 FQU13N06L FQU13N06 60 60 Single Single 0.11 0.14


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PDF
thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: No file text available


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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2009 - Not Available

Abstract: No abstract text available
Text: FQU13N06LTU Figure 16. TO251 (I-PAK), Molded, 3-Lead Package drawings are provided as a service to


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PDF FQU20N06L
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