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Rochester Electronics LLC
FQPF20N06 POWER FIELD-EFFECT TRANSISTOR, 1
FQPF20N06 ECAD Model
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onsemi
FQPF20N06 MOSFET N-CH 60V 15A TO220F
FQPF20N06 ECAD Model
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onsemi
FQPF20N06L MOSFET N-CH 60V 15.7A TO220F
FQPF20N06L ECAD Model
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Farnell FQPF20N06L Each 0 51 Weeks, 1 Days 1 £2.04 £1.83 £1.4 £1.17 £1.17 Buy Now
Fairchild Semiconductor Corporation
FQPF20N06
FQPF20N06 ECAD Model
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Fairchild Semiconductor Corporation
FQPF20N06L Power Field-Effect Transistor, 15.7A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FQPF20N06L ECAD Model
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ComS.I.T. USA FQPF20N06L 350 - - - - - Get Quote

FQPF20N06 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
FQPF20N06 FQPF20N06 ECAD Model Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF
FQPF20N06L FQPF20N06L ECAD Model Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF

FQPF20N06 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - Not Available

Abstract: No abstract text available
Text: FQPF20N06 N-Channel QFET® MOSFET 60 V, 15 A, 60 mΩ Description Features • 15 A, 60 V , 25°C) Drain Current FQPF20N06 60 15 IDM Drain Current VGSS Gate-Source Voltage , 300 °C FQPF20N06 5.00 Unit °C/W 62.5 °C/W (Note 1) (Note 3) - Derate , Corporation FQPF20N06 Rev. C1 1 www.fairchildsemi.com FQPF20N06 — N-Channel QFET® MOSFET November 2013 Part Number FQPF20N06 Top Mark FQPF20N06 Package TO-220F Electrical


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PDF FQPF20N06
2001 - FQPF20N06

Abstract: No abstract text available
Text: FQPF20N06 N-Channel MOSFET March 2013 FQPF20N06 N-Channel QFET® MOSFET 60 V, 15 A, 60 m , Current - Pulsed (Note 1) FQPF20N06 60 15 10.7 60 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Unit V , Unit °C/W °C/W ©2001 Fairchild Semiconductor Corporation FQPF20N06 Rev. C0 www.fairchildsemi.com FQPF20N06 N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise , of operating temperature ©2001 Fairchild Semiconductor Corporation FQPF20N06 Rev. C0


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PDF FQPF20N06 FQPF20N06
2001 - Not Available

Abstract: No abstract text available
Text: QFET TM FQPF20N06 60V N-Channel MOSFET General Description Features These N-Channel , C Parameter Drain-Source Voltage - Continuous (TC = 25° C) Drain Current FQPF20N06 60 , Rev. A1. May 2001 FQPF20N06 May 2001 Symbol TC = 25° unless otherwise noted C , operating temperature ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQPF20N06 Electrical Characteristics FQPF20N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0


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PDF FQPF20N06
2000 - FQPF20N06

Abstract: No abstract text available
Text: FQPF20N06 April 2000 QFET TM FQPF20N06 60V N-Channel MOSFET General Description , otherwise noted Parameter ID IDM Drain Current FQPF20N06 Drain-Source Voltage - Continuous , Rev. A, April 2000 FQPF20N06 Electrical CharacteristicsT VGS 15.0 V 10.0 V 8.0 V 7.0 V , ] FQPF20N06 Typical Characteristics VDS = 30V VDS = 48V 8 6 4 2 Note : ID = 20A 0 0 , Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQPF20N06 Typical


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PDF FQPF20N06 FQPF20N06
2001 - FQPF20N06

Abstract: No abstract text available
Text: QFET TM FQPF20N06 60V N-Channel MOSFET General Description Features These N-Channel , Voltage - Continuous (TC = 25°C) Drain Current FQPF20N06 60 15 - Continuous (TC = 100°C) IDM , °C/W Rev. A1. May 2001 FQPF20N06 May 2001 Symbol TC = 25°C unless otherwise noted , Semiconductor Corporation Rev. A1. May 2001 FQPF20N06 Electrical Characteristics FQPF20N06 , , (Norm alized) Drain-Source Breakdown Voltage FQPF20N06 Typical Characteristics 1.5 1.0


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PDF FQPF20N06 FQPF20N06
2002 - IRFS630A

Abstract: IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
Text: Single 0.04 - - - 19 21 39 FQPF20N06 60 Single 0.06 - - - , 0.035 0.045@5V - - 15 22.5 38 FQPF20N06L 60 Single 0.055 0.07@5V -


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PDF O-220F O-220F FQPF85N06 FQPF65N06 FQPF55N06 FQPF50N06 FQPF30N06 FQPF20N06 FQPF13N06 FQPF50N06L IRFS630A IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Text: FQPF11N40 FQPF12N60 FQPF19N20 FQPF20N06 FQPF20N06L FQPF30N06 FQPF30N06L FQPF3N60 FQPF3N80 FQPF4N50


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: FQPF11N40 FQPF12N60 FQPF19N20 FQPF20N06 FQPF20N06L FQPF30N06 FQPF30N06L FQPF3N60 FQPF3N80 FQPF4N50


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Text: FQPF1N60 FQPF1P50 FQPF20N06 FQPF20N06L FQPF22P10 FQPF28N15 FQPF2N40 FQPF2P40 FQPF33N10 FQPF33N10L FQPF3N80


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PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: FQPF18N50V2 FQPF19N10 FQPF19N20 FQPF19N20C FQPF1N60 FQPF1N60C FQPF20N06 FQPF28N15 FQPF2N50 FQPF2N50C


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Text: No file text available


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PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: No file text available


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PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: No file text available


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
2004 - STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: No file text available


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PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: No file text available


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thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: No file text available


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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2011 - FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: No file text available


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PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
2001 - Not Available

Abstract: No abstract text available
Text: FQPF20N06L N-Channel QFET® MOSFET 60 V, 15.7 A, 55 mΩ Description Features This , Continuous (TC = 25°C) Drain Current FQPF20N06L 60 15.7 IDM Drain Current Gate-Source Voltage , °C 300 °C FQPF20N06L 5.00 Unit °C/W 62.5 °C/W (Note 1) (Note 3) - , Corporation FQPF20N06L Rev. C1 1 www.fairchildsemi.com FQPF20N06L — N-Channel QFET® MOSFET November 2013 Part Number FQPF20N06L Top Mark FQPF20N06L Package TO-220F Electrical


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PDF FQPF20N06L
2000 - FQPF20N06L

Abstract: No abstract text available
Text: FQPF20N06L April 2000 QFET TM FQPF20N06L 60V LOGIC N-Channel MOSFET General , Recovery dv/dt Power Dissipation (TC = 25°C) FQPF20N06L Drain-Source Voltage - Continuous (TC = 25 , temperature ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF20N06L Electrical , V GS , Gate-Source Voltage [V] 10 Capacitance [pF] FQPF20N06L Typical Characteristics , Characteristics Rev. A, April 2000 FQPF20N06L Typical Characteristics (Continued) 1.2 BV DSS


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PDF FQPF20N06L FQPF20N06L
FQPF630

Abstract: FQPF14N30 FQPF7N80 FQPF FQPF6N50 FQPF19N10 FQPF19N10L FQPF19N20 FQPF19N20L FQPF20N06L
Text: Discrete Products CD-ROM Selection Guide Power MOSFET Selector TO-220F RDS(ON) Max () @ VGS = QG (nC) @ VGS = 5V ID (A) PD (W) 0.01 112 53 62 FQPF65N06 0.016 65 40 56 FQPF50N06 0.022 41 31 47 FQPF30N06L 0.035 0.045@5 20 22.5 38 FQPF20N06L 0.055 0.07@5 13 15.7 30 0.1 0.11@5 18 13.6 38 0.1 25 13.6 38 0.075 78 17.5 55 Part Number VDS (V) 10V 4.5V 2.5V N-Channel


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PDF O-220F FQPF65N06 FQPF50N06 FQPF30N06L FQPF20N06L FQPF85N06 FQPF19N10L FQPF19N10 FQPF34N20 FQPF34N20L FQPF630 FQPF14N30 FQPF7N80 FQPF FQPF6N50 FQPF19N10 FQPF19N10L FQPF19N20 FQPF19N20L FQPF20N06L
2001 - FQPF20N06L

Abstract: No abstract text available
Text: QFET TM FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQPF20N06L 60 15.7 IDM , Typ - Max 5.00 Units °C/W - 62.5 °C/W Rev. A1. May 2001 FQPF20N06L May , temperature ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQPF20N06L Electrical Characteristics FQPF20N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V


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PDF FQPF20N06L FQPF20N06L
2001 - FQPF20N06L

Abstract: MOSFET Fairchild Semiconductor FQPF20N06L
Text: FQPF20N06L N-Channel MOSFET March 2013 N-Channel QFET® MOSFET 60 V, 15.7 A, 52 m , , and variable switching power applications. FQPF20N06L Features · 15.7 A, 60 V, RDS(on)=52 m(Max , °C) Drain Current - Pulsed (Note 1) FQPF20N06L 60 15.7 11.1 62.8 ± 20 (Note 2) (Note 1) (Note 1) (Note , -Max 5.00 62.5 Unit °C/W °C/W ©2001 Fairchild Semiconductor Corporation FQPF20N06L Rev. C0 www.fairchildsemi.com FQPF20N06L N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25


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PDF FQPF20N06L FQPF20N06L MOSFET Fairchild Semiconductor FQPF20N06L
2001 - Not Available

Abstract: No abstract text available
Text: QFET TM FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These , FQPF20N06L 60 15.7 IDM Drain Current Gate-Source Voltage - Pulsed A 11.1 - Continuous , ° C/W Rev. A1. May 2001 FQPF20N06L May 2001 Symbol TC = 25° unless otherwise noted C , ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQPF20N06L Electrical Characteristics FQPF20N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V


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PDF FQPF20N06L
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