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Rochester Electronics LLC
FQPF13N10 MOSFET N-CH 100V 8.7A TO220F
FQPF13N10 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Digi-Key FQPF13N10 Tube 146,156 489 - - - $0.61 $0.61 Buy Now
onsemi
FQPF13N10 MOSFET N-CH 100V 8.7A TO220F
FQPF13N10 ECAD Model
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Digi-Key FQPF13N10 Tube 0 1,000 - - - $0.31416 $0.31416 Buy Now
Avnet Americas FQPF13N10 Bulk 0 4 Weeks 544 - - - $0.66269 $0.60746 Buy Now
onsemi
FQPF13N10L MOSFET N-CH 100V 8.7A TO220F
FQPF13N10L ECAD Model
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Digi-Key FQPF13N10L Tube 0 1,000 - - - $0.27984 $0.27984 Buy Now
Fairchild Semiconductor Corporation
FQPF13N10 8.7A, 100V, 0.18ohm, N-Channel Power MOSFET
FQPF13N10 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Rochester Electronics FQPF13N10 146,156 $0.6195 $0.6195 $0.5947 $0.5699 $0.5699 Buy Now

FQPF13N10 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
FQPF13N10 FQPF13N10 ECAD Model Fairchild Semiconductor 100 V N-Channel MOSFET Original PDF
FQPF13N10L FQPF13N10L ECAD Model Fairchild Semiconductor 100 V Logic N-Channel MOSFET Original PDF

FQPF13N10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - Not Available

Abstract: No abstract text available
Text: QFET TM FQPF13N10 100V N-Channel MOSFET General Description Features These N-Channel , Continuous (TC = 25° C) Drain Current FQPF13N10 100 8.7 - Continuous (TC = 100° C) IDM Drain , 62.5 ° C/W Rev. A1, January 2001 FQPF13N10 January 2001 Symbol TC = 25° unless , Semiconductor International Rev. A1, January 2001 FQPF13N10 Electrical Characteristics FQPF13N10 , Characteristics Rev. A1, January 2001 FQPF13N10 Typical Characteristics (Continued) 3.0 1.2


Original
PDF FQPF13N10
2000 - Not Available

Abstract: No abstract text available
Text: FQPF13N10 May 2000 QFET FQPF13N10 100V N-Channel MOSFET General Description These , Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF13N10 , ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQPF13N10 Electrical , temperature ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQPF13N10 Typical , Fairchild Semiconductor International Rev. A, May 2000 FQPF13N10 Typical Characteristics


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PDF FQPF13N10
2000 - FQPF13N10

Abstract: No abstract text available
Text: QFET TM FQPF13N10 100V N-Channel MOSFET General Description Features These N-Channel , Current FQPF13N10 100 8.7 - Continuous (TC = 100°C) IDM Drain Current - Pulsed Units V , , January 2001 FQPF13N10 January 2001 Symbol TC = 25°C unless otherwise noted Parameter , Semiconductor International Rev. A1, January 2001 FQPF13N10 Electrical Characteristics FQPF13N10 , FQPF13N10 Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source


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PDF FQPF13N10 FQPF13N10
2002 - IRFS630A

Abstract: IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
Text: Single 0.11 - - - 27 10.7 32 FQPF13N10 100 Single 0.18 - - - , - 16.9 10.7 36 FQPF13N10L 100 Single 0.18 0.2@5V - - 8.7 8.7


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PDF O-220F O-220F FQPF85N06 FQPF65N06 FQPF55N06 FQPF50N06 FQPF30N06 FQPF20N06 FQPF13N06 FQPF50N06L IRFS630A IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: FQPF13N10 FQPF13N50 FQPF13N50C FQPF16N15 FQPF16N25 FQPF16N25C FQPF17N40 FQPF17P06 FQPF18N20V2


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Text: No file text available


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PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: No file text available


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PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: No file text available


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: No file text available


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PDF
thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: No file text available


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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2000 - FQPF13N10L

Abstract: No abstract text available
Text: QFET TM FQPF13N10L 100V LOGIC N-Channel MOSFET General Description Features These , FQPF13N10L 100 Units V 8.7 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed , 2000 FQPF13N10L December 2000 Symbol TC = 25°C unless otherwise noted Parameter Test , FQPF13N10L Electrical Characteristics FQPF13N10L Typical Characteristics VGS 10.0 V 8.0 V 6.0 , Characteristics Rev. A4, December 2000 FQPF13N10L Typical Characteristics (Continued) 3.0 1.2


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PDF FQPF13N10L FQPF13N10L
2000 - Not Available

Abstract: No abstract text available
Text: FQPF13N10L May 2000 QFET FQPF13N10L 100V LOGIC N-Channel MOSFET General Description These , Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF13N10L , ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQPF13N10L Electrical , 2000 FQPF13N10L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom , ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQPF13N10L Typical


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PDF FQPF13N10L
2000 - Not Available

Abstract: No abstract text available
Text: FQPF13N10L August 2000 QFET FQPF13N10L 100V LOGIC N-Channel MOSFET General Description , Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF13N10L , ©2000 Fairchild Semiconductor International Rev. A2, August 2000 FQPF13N10L Electrical , , August 2000 FQPF13N10L Typical Characteristics ID, Drain Current [A] ID , Drain Current [A , ©2000 Fairchild Semiconductor International Rev. A2, August 2000 FQPF13N10L Typical


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PDF FQPF13N10L
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