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fusible resistors

Abstract: 2R20 FQP-03 fusible 7W 1.8 ohm
Text: FUSIBLE RESISTORS (FQP TYPE ) : : : FQP-01 : 2008.01.01 A 1/26 1. 2. 2.1 : , : () : FUSIBLE RESISTORS (FQP TYPE ) 01 : 1W 02 : 2W 03 : 3W 05 : 5W 07 : 7W 10 : 10W FQP 1W 5% FQP 01 J : ±5% G : ±2% F : ±1% J , ( 5% + 0.05) ± ( 5% + 0.05) ± ( 5% + 0.05) ± 300PPM FQP- 07 7W 350V 500V 400V FQP-10 10W , 9.0± 1.5 0.75±0.1 30±3 FQP- 07 7W 35.0±1.5 10.0± 1.5 9.0± 1.5 0.75±0.1 30±3


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PDF FQP-01 fusible resistors 2R20 FQP-03 fusible 7W 1.8 ohm
Wire wound resistor 5W

Abstract: fusible resistor fusible fused resistor 10R0 2R20 resistance fusible
Text: POWER FUSIBLE RESISTORS (FQP TYPE ) 01 : 1W 02 : 2W 03 : 3W 05 : 5W 07 : 7W 10 : 10W 200 , : 2008.01.01 4. ELECTRICAL CHARACTERISTICS TYPE FQP-01 FQP-02 FQP-03 FQP-05 FQP- 07 FQP , 22.0±1.5 10.0± 1.5 9.0± 1.5 0.75±0.1 30±3 FQP- 07 7W 35.0±1.5 10.0± 1.5 9.0± 1.5


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PDF FQP-02 Wire wound resistor 5W fusible resistor fusible fused resistor 10R0 2R20 resistance fusible
2012 - Not Available

Abstract: No abstract text available
Text: : FQP SERIES POWER FUSIBLE RESISTORS (FQP TYPE ) 01 : 1W 02 : 2W 03 : 3W 05 : 5W 07 , -02 FQP-03 FQP-05 FQP- 07 FQP-10 Power Rating at 70℃ 1W 2W 3W 5W 7W 10W , 0.75±0.1 30±3 FQP- 07 7W 35.0±1.5 10.0± 1.5 9.0± 1.5 0.75±0.1 30±3 FQP


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PDF FQP-02
2001 - 6n60

Abstract: 6n60 data 6n60 equivalent imsys TO220 Semiconductor Packaging 6N60 datasheet 7103 transistor 6n60 6N-60
Text: / 03 / 17 07 :30 12,000 Weight per unit (gm) 590mm x 330mm x 245mm Outer box(8,000cap) 01


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PDF O-220-3L O-220 237mm 167mm 200cap) 525mm 360mm 265mm 6n60 6n60 data 6n60 equivalent imsys TO220 Semiconductor Packaging 6N60 datasheet 7103 transistor 6n60 6N-60
9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
Text: ± 12 ± 12 ± 12 ± 12 ± 12 ± 10 ± 12 0.7 -0.8 -0.6 (min) -0.8 -0.6 (min) -0.6 (min , ) KEC-H Corp. PKG Application Status E-Bike Car Booster ' 07 . 02 ' 07 . 05 DC-DC Con. ' 07 . 02 66 First & Best Low Voltage MOS-FET Line up Plan (' 07 ) First & Best BVDSS (V) RDS(ON , Corp. DC-DC (Low side) DC-DC ' 07 . 01 load switch 77 First & Best Low Voltage MOS-FET Line up Plan (' 07 ) First & Best BVDSS (V) ID (A) VGS (V) Vth (V) RDS(ON) Max (m


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PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
TRANSISTER 431

Abstract: kss211 KS5211E 1.5v Quartz Clock 10 alarm clock ic kss21 KS5211F KS5211A KS5211 431 regulator
Text: Current Idd 0.7 2.0 M Output Drive Current •IL1 Rm = 200SÎ, Vdd = 1.2V 4.0 mA IL2 4.0 mA , Capacitance Cin 20 PF OSC Accuracy o„ 0.7 2 sec/day GENERAL DESCRIPTION The KS5211 series is a CMOS , 4.31 2.92 3.43 0.51 1.02 <8 SAMSUNG SEMICONDUCTOR 0894 A- 07 255 PACKAGE DIMENSIONS T-90 -M


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PDF KS5211 KS5211 KS5211A KS5211E KS5211F 768KHz TRANSISTER 431 kss211 KS5211E 1.5v Quartz Clock 10 alarm clock ic kss21 KS5211F KS5211A 431 regulator
KS5211E

Abstract: acr transister 08DIP
Text: Symbol V dd Min 1.2 Typ 1.5 0.7 Max 1.8 2.0 Unit V /*A mA mA mA mA T" E 8 Il , V dd= 100mV 0.5 20 20 0.7 2 3.0 1.1 1.1 1 Rm = 1K, Vdd = 1.5V f*A V V ppm PF pF sec/day V , SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055


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PDF DQDS71S KS5211 KS5211 KS5211A KS5211E KS5211F 768KHz KS5211E acr transister 08DIP
SAMSUNG CHIP CAPACITOR

Abstract: L4145 KS5311A ks531 74145 diagram
Text: SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5


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PDF KS5311 KS5311 SAMSUNG CHIP CAPACITOR L4145 KS5311A ks531 74145 diagram
digital watch circuit

Abstract: ks531
Text: .0 Vss+0.3 ~ Vdd - 0.7 -2 0 -+ 7 0 -5 5 -+ 1 2 5 Unit V V °c °c ELECTRICAL CHARACTERISTICS (Ta , A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5 PACKAGE


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PDF KS5310 KS5310 768Hz digital watch circuit ks531
FRH-100

Abstract: 100C FRN-50 synton tech Wire wound resistor 5W FHN10
Text: No file text available


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PDF FRN-12 FRN-335 1-10KQ FRN-50 FRH-100 FRN-20D FKN-300 FKN-500 FKN-500B FKN-600 100C synton tech Wire wound resistor 5W FHN10
KS5814

Abstract: No abstract text available
Text: Sink Current Unit 0.4 200 210 100 / 0.7 220 KHz APPLICATION CIRCUIT , " 07 0.56 1.02 255 SAMSUNG SEMICONDUCTOR INC DEE D PACKAGE DIMENSIONS


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PDF 00GSfl37 KS5814 KS5814
KS5206E

Abstract: ks5206a05hz KS5206A
Text: SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5


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PDF KS5206 KS5206 KS5206A KS5206E KS5206F 2048Hz 768KHz 766Hz ks5206a05hz
Not Available

Abstract: No abstract text available
Text: 1.02 SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E


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PDF KS5207 KS5207A KS5207E KS5207F 768KHz III005703 KS5207
1998 - LQFP 48 Package

Abstract: UCC5630 LQFP-48 SSOP-36
Text: 2.0 V ­30 30 µA DIFFB Single Ended Threshold 0.6 0.7 V DIFFB Sense LVDS


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PDF UCC5630 UCC5630 EIA485) FAST-40 LQFP 48 Package LQFP-48 SSOP-36
circuit diagram for samsung lcd

Abstract: ks531 IC mark A09 lcd circuit diagram for samsung digital alarm watch circuit
Text: SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5


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PDF KS5184 KS5184 KS5310 hour/24 Driv5055 circuit diagram for samsung lcd ks531 IC mark A09 lcd circuit diagram for samsung digital alarm watch circuit
LD 757 ps

Abstract: No abstract text available
Text: ; parameter tp Normalised Current Derating with h e i tsin : co 7IpC unc N \ \ \ \ IE - 07


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PDF BUK545-100A/B BUK545 -100A -100B BUK545-100A/B 1E-02 LD 757 ps
jb21

Abstract: samsung k5 samsung K4 samsung display 10"
Text: =0V VlN =Vgg 15 1 0.3 Vgg+0.3 0 0.7 - V gg -3.0V without load 1.7 2.7 - V gg=3.0V, under " 0" display , SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055


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PDF KS6022A KS6022A jb21 samsung k5 samsung K4 samsung display 10"
1999 - FQP48

Abstract: No abstract text available
Text: No file text available


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PDF UCC5619 27-Line FAST-20 900mA 500mA UCC5619 UCC5619MWP UCC5619MWPTR SLLA067 FQP48
2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
Text: No file text available


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PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
SAMSUNG CHIP CAPACITOR

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055


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PDF 000573L. KS6026 KS6026 SAMSUNG CHIP CAPACITOR
1999 - on921

Abstract: No abstract text available
Text: No file text available


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PDF UCC5619 27-Line FAST-20 900mA 500mA UCC5619 slus265 UCC5619MWP UCC5619MWPTR on921
qt27

Abstract: No abstract text available
Text: No file text available


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PDF 27-Line FAST-20 -900mA 500mA UCC5619 UCC5619 LINE27: qt27
Not Available

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR 0894 A " 07 0.56 1.02 255 SAMSUNG SEMICONDUCTOR INC DEE D


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PDF KS5113 KS5113 768Hz
Not Available

Abstract: No abstract text available
Text: HA - - 0.7 -1.2 V -60 -120 - mA - - 100 HA - 200 - mV


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PDF CD74FCT377T 500ii
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF DS3415-1 DC3000 -20dBm -20dBm DC3031/DC3032 DC3041/DC3042 DC3033/DC3034 DC3043/DC3044
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