The Datasheet Archive

FQI85N06 datasheet (2)

Part Manufacturer Description Type PDF
FQI85N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF
FQI85N06 Fairchild Semiconductor QFET N-CHANNEL Scan PDF

FQI85N06 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FQB85N06

Abstract: FQI85N06
Text: QFET N-CHANNEL FQB85N06, FQI85N06 FEATURES Advanced New Design Avalanche Rugged Technology , © D2-PAK I2-PAK FQB85N06 FQI85N06 1. Gate 2. Drain 3. Source FQB85N06, FQI85N06 QFET N-CHANNEL , : Limited by Package 2 P FQI85N06 Figi. Output Characteristics Fig 2 , » SiMECÄSUßTSR 3 FQB85N06, FQI85N06 QFET N-CHANNEL « "5 > c g - m » o> > m 2 Q Fig 7. Breakdown , Wave Pulse Duration [sec] 4 P FQI85N06 Fig 12. Gate Charge Test


OCR Scan
PDF FQB85N06, FQI85N06 Dissipatio06, D2PAK/TO-263 PAK/TO-263 FQB85N06 FQI85N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB85N06 / FQI85N06 May 2001 QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB85N06 / FQI85N06 60 85 60 , . May 2001 FQB85N06 / FQI85N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Rev. A1. May 2001 FQB85N06 / FQI85N06 Typical Characteristics 10 2 ID, Drain Current , Semiconductor Corporation Rev. A1. May 2001 FQB85N06 / FQI85N06 Typical Characteristics (Continued


Original
PDF FQB85N06 FQI85N06 FQI85N06 FQI85N06TU O-262
Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB85N06, FQI85N06 FEATURES BVDSS = 60 V • Advanced New Design â , Fairchild Semiconductor Corporation 1 QFET N-CHANNEL FQB85N06, FQI85N06 ELECTRICAL , "t " li O a N D U C T C W ' J K S QFET N-CHANNEL FQB85N06, FQI85N06 Fig 1. Output , Charge [nC] P M M P I O iM lU B DU STO R: 3 QFET N-CHANNEL FQB85N06, FQI85N06 Fig 7 , , FQI85N06 Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit &


OCR Scan
PDF FQB85N06, FQI85N06 D2PAK/TO-263 D2PAK/TO-263
2001 - FQB85N06

Abstract: FQI85N06
Text: QFET TM FQB85N06 / FQI85N06 60V N-Channel MOSFET General Description Features These , °C) Drain Current FQB85N06 / FQI85N06 60 Units V 85 A - Continuous (TC = 100°C) IDM , FQB85N06 / FQI85N06 May 2001 Symbol TC = 25°C unless otherwise noted Parameter Test , Semiconductor Corporation Rev. A1. May 2001 FQB85N06 / FQI85N06 Electrical Characteristics FQB85N06 / FQI85N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5


Original
PDF FQB85N06 FQI85N06 FQI85N06
2000 - FQB85N06

Abstract: FQI85N06
Text: FQB85N06 / FQI85N06 April 2000 QFET TM FQB85N06 / FQI85N06 60V N-Channel MOSFET , / FQI85N06 - Pulsed A 60 A 300 (Note 1) A ±25 V Single Pulsed Avalanche Energy , ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQB85N06 / FQI85N06 Electrical , ] FQB85N06 / FQI85N06 Typical Characteristics VDS = 48V 8 6 4 2 Note : ID = 85A 0 0 , Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQB85N06 / FQI85N06


Original
PDF FQB85N06 FQI85N06 FQI85N06
1999 - Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB85N06, FQI85N06 FEATURES BVDSS = 60V · · · · · · · · Advanced New Design , 1 2 3 RDS(ON) = 0.010 ID = 85A } D2-PAK 2 I2-PAK FQB85N06 FQI85N06 1. Gate 2 , © 1999 Fairchild Semiconductor Corporation FQB85N06, FQI85N06 QFET N-CHANNEL ELECTRICAL , : Limited by Package 2 QFET N-CHANNEL FQB85N06, FQI85N06 Fig 1. Output Characteristics VGS , Gate Charge [nC] 3 FQB85N06, FQI85N06 QFET N-CHANNEL Fig 7. Breakdown Voltage vs


Original
PDF FQB85N06, FQI85N06 FQB85N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB85N06 / FQI85N06 May 2001 QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB85N06 / FQI85N06 60 85 60 , . May 2001 FQB85N06 / FQI85N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Rev. A1. May 2001 FQB85N06 / FQI85N06 Typical Characteristics 10 2 ID, Drain Current , Semiconductor Corporation Rev. A1. May 2001 FQB85N06 / FQI85N06 Typical Characteristics (Continued


Original
PDF FQB85N06 FQI85N06 FQB85N06TM O-263
2002 - sfi9520

Abstract: HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
Text: Discrete MOSFET TO-262 RDS(ON) Max (Ohms) @ VGS = 10V Products VDS Min. (V) 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 - - - 125 75 325 HUF75333S3 55 Single 0.016 - - - 40 66 150 FQI85N06 60 Single 0.01 - - - 86 85 160


Original
PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 sfi9520 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
Text: FQI33N10 FQI33N10L FQI34N20L FQI3N80 FQI46N15 FQI50N06 FQI50N06L FQI5N15 FQI6N15 FQI7N10L FQI7P20 FQI85N06


Original
PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Text: No file text available


Original
PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Supplyframe Tracking Pixel