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FQI65N06 datasheet (1)

Part Manufacturer Description Type PDF
FQI65N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF

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2001 - Not Available

Abstract: No abstract text available
Text: FQB65N06 / FQI65N06 May 2001 QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB65N06 / FQI65N06 60 65 , . May 2001 FQB65N06 / FQI65N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Typical Characteristics 10 2 ID, Drain , Semiconductor Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Typical Characteristics (Continued


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PDF FQB65N06 FQI65N06 FQB65N06TM O-263
2000 - FQB65N06

Abstract: FQI65N06
Text: FQB65N06 / FQI65N06 April 2000 QFET TM FQB65N06 / FQI65N06 60V N-Channel MOSFET , / FQI65N06 - Pulsed A 46.1 A 260 (Note 1) A ±25 V Single Pulsed Avalanche , Fairchild Semiconductor International Rev. A, April 2000 FQB65N06 / FQI65N06 Electrical , / FQI65N06 Typical Characteristics VDS = 30V VDS = 48V 8 6 4 2 Note : ID = 65A 0 0 , Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQB65N06 / FQI65N06


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PDF FQB65N06 FQI65N06 FQI65N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB65N06 / FQI65N06 May 2001 QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB65N06 / FQI65N06 60 65 , . May 2001 FQB65N06 / FQI65N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Typical Characteristics 10 2 ID, Drain , Semiconductor Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Typical Characteristics (Continued


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PDF FQB65N06 FQI65N06 FQI65N06 FQI65N06TU O-262
2001 - FQB65N06

Abstract: FQI65N06
Text: QFET TM FQB65N06 / FQI65N06 60V N-Channel MOSFET General Description Features These , Current FQB65N06 / FQI65N06 60 Units V 65 A - Continuous (TC = 100°C) IDM Drain , FQB65N06 / FQI65N06 May 2001 Symbol TC = 25°C unless otherwise noted Parameter Test , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Electrical Characteristics FQB65N06 / FQI65N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V


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PDF FQB65N06 FQI65N06 FQI65N06
2002 - sfi9520

Abstract: HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
Text: FQI65N06 60 Single 0.016 - - - 48 65 150 FQI55N06 60 Single 0.02


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PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 sfi9520 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Text: No file text available


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
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