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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
FQI50N06LTU Fairchild Semiconductor Corporation Rochester Electronics 1,730 $1.77 $1.44
FQI50N06TU ON Semiconductor Avnet - €1.18 €0.60
FQI50N06TU ON Semiconductor Avnet - $0.59 $0.55
FQI50N06TU Fairchild Semiconductor Corporation Rochester Electronics 841 $1.36 $1.10

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FQI50N06 datasheet (7)

Part Manufacturer Description Type PDF
FQI50N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF
FQI50N06 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
FQI50N06L Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF
FQI50N06L Fairchild Semiconductor QFET N-CHANNEL Scan PDF
FQI50N06LTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 52.4A I2PAK Original PDF
FQI50N06LTU Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF
FQI50N06TU Fairchild Semiconductor 60V N-Channel QFET Original PDF

FQI50N06 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FQB50N06

Abstract: FQI50N06
Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES Advanced New Design Avalanche Rugged Technology , I2-PAK FQB50N06 FQI50N06 1. Gate 2. Drain 3. Source FQB50N06, FQI50N06 QFET N-CHANNEL ELECTRICAL , FQI50N06 Fig 1. Output Characteristics VDS, Drain-Source Voltage [V , 15 20 25 Q , Total Gate Charge [nC] ISMMRCSMEIJE» SiMECÄSUßTSR 3 FQB50N06, FQI50N06 QFET , Temperature[°C] Fig 11. Thermal Response 4 PAIRCHILD QFET N-CHANNEL FQB50N06, FQI50N06 Fig 12. Gate


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PDF FQB50N06, FQI50N06 018i2 Dissipation06, D2PAK/TO-263 PAK/TO-263 FQB50N06 FQI50N06
Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60 V • Advanced New Design â , Semiconductor Corporation 1 QFET N-CHANNEL FQB50N06, FQI50N06 ELECTRICAL CHARACTERISTICS Symbol , " l iO a N D U C T C W ' JS K QFET N-CHANNEL FQB50N06, FQI50N06 Fig 1. Output , N-CHANNEL FQB50N06, FQI50N06 Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs , s ii QFET N-CHANNEL FQB50N06, FQI50N06 Fig 12. Gate Charge Test Circuit & Waveform Fig


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PDF FQB50N06, FQI50N06 022Cl D2PAK/TO-263 D2PAK/TO-263
2000 - Not Available

Abstract: No abstract text available
Text: Tape Width Quantity 330mm 24mm FQI50N06 FQI50N06TU I2-PAK - - 800 50 , FQB50N06 / FQI50N06 N-Channel QFET® MOSFET 60 V, 50 A, 22 mΩ Description Features This , Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted FQB50N06TM / FQI50N06TU 60 , FQB50N06TM FQI50N06TU Parameter Thermal Resistance, Junction to Case, Max. 1.24 Thermal Resistance , / FQI50N06 Rev. C1 1 o C/W 40 www.fairchildsemi.com FQB50N06 / FQI50N06 — N-Channel QFETÂ


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PDF FQB50N06 FQI50N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2


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PDF FQB50N06 FQI50N06 FQI50N06TU O-262
2001 - FQB50N06

Abstract: FQI50N06
Text: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , °C) Drain Current FQB50N06 / FQI50N06 60 Units V 50 A - Continuous (TC = 100°C) IDM , . A1. May 2001 FQB50N06 / FQI50N06 May 2001 Symbol TC = 25°C unless otherwise noted , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V


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PDF FQB50N06 FQI50N06 FQI50N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2


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PDF FQB50N06 FQI50N06
2000 - MOTOR DRIVER 48v 50A

Abstract: No abstract text available
Text: FQB50N06 / FQI50N06 N-Channel MOSFET March 2013 60 V, 50 A, 22 m Description N-Channel QFET MOSFET FQB50N06 / FQI50N06 This N-Channel enhancement mode power MOSFET is produced using , (Note 1) FQB50N06 / FQI50N06 60 50 35.4 200 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A , Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C0 www.fairchildsemi.com FQB50N06 / FQI50N06 N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise


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PDF FQB50N06 FQI50N06 FQI50N06 MOTOR DRIVER 48v 50A
2008 - Not Available

Abstract: No abstract text available
Text: QFET ® FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , Continuous (TC = 25° C) Drain Current IDM Drain Current VGSS FQB50N06 / FQI50N06 60 EAS , / FQI50N06 October 2008 Symbol TC = 25° unless otherwise noted C Parameter Test Conditions , temperature ©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V


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PDF FQB50N06 FQI50N06 FQI50N06
2008 - FQB50N06

Abstract: FQI50N06
Text: QFET ® FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , (TC = 25°C) Drain Current FQB50N06 / FQI50N06 60 Units V 50 A - Continuous (TC = 100 , . A2. Oct 2008 FQB50N06 / FQI50N06 October 2008 Symbol TC = 25°C unless otherwise noted , Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V


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PDF FQB50N06 FQI50N06 FQI50N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2


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PDF FQB50N06 FQI50N06 FQB50N06TM O-263
2000 - FQB50N06

Abstract: FQI50N06
Text: FQB50N06 / FQI50N06 April 2000 QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET , / FQI50N06 - Pulsed A 35.4 A 200 (Note 1) A ±25 V Single Pulsed Avalanche , Fairchild Semiconductor International Rev. A, April 2000 FQB50N06 / FQI50N06 Electrical , 1000 Crss 500 V GS , Gate-Source Voltage [V] 2500 Capacitance [pF] FQB50N06 / FQI50N06 , ] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQB50N06 / FQI50N06 Typical


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PDF FQB50N06 FQI50N06 FQI50N06
1999 - Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60V · · · · · · · · Advanced New Design , 1 2 3 RDS(ON) = 0.022 ID = 50A D2-PAK 2 I2-PAK FQB50N06 FQI50N06 1. Gate 2. Drain , © 1999 Fairchild Semiconductor Corporation FQB50N06, FQI50N06 QFET N-CHANNEL ELECTRICAL , Operating Temperature 2 QFET N-CHANNEL FQB50N06, FQI50N06 Fig 1. Output Characteristics 10 2 , Charge [nC] 3 FQB50N06, FQI50N06 QFET N-CHANNEL Fig 7. Breakdown Voltage vs. Temperature


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PDF FQB50N06, FQI50N06 FQB50N06
2002 - sfi9520

Abstract: HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
Text: - - - 35 55 133 FQI50N06 60 Single 0.022 - - - 31 50 , 53 FQI13N06 60 Single 0.135 - - - 5.8 13 45 FQI50N06L 60


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PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 sfi9520 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
Text: FQI33N10 FQI33N10L FQI34N20L FQI3N80 FQI46N15 FQI50N06 FQI50N06L FQI5N15 FQI6N15 FQI7N10L FQI7P20 FQI85N06


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PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
Text: No file text available


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PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
Text: No file text available


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PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 Diode 1N4001 50V 1.0A DO-41 Rectifier Diode BZX85C6V8 SPICE MODEL K*D1691 make SMPS inverter welding machine 1N5402 spice model transistor KSP44 tip122 tip127 mosfet audio amp
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thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2008 - FQB50N06L

Abstract: FQI50N06L
Text: QFET ® FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features , Continuous (TC = 25°C) Drain Current FQB50N06L / FQI50N06L 60 Units V 52.4 A - Continuous , Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06L / FQI50N06L October 2008 Symbol TC = 25 , Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06L / FQI50N06L Electrical Characteristics FQB50N06L / FQI50N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V


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PDF FQB50N06L FQI50N06L FQI50N06L
Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB50N06L, FQI50N06L FEATURES BVqss = 60V • Advanced New Design â , , FQI50N06L QFET N-CHANNEL ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise specified) Symbol , QFET N-CHANNEL FQB50N06L, FQI50N06L Fig 1. Output Characteristics Fig 2. Transfer , Voltage 3 FQB50N06L, FQI50N06L QFET N-CHANNEL Fig 7. Breakdown Voltage vs. Temperature -1 0 , FAIRCHILD SEMICONDUCTOR im QFET N-CHANNEL FQB50N06L, FQI50N06L Fig 12. Gate Charge Test Circuit &


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PDF FQB50N06L, FQI50N06L
2000 - Not Available

Abstract: No abstract text available
Text: FQB50N06L / FQI50N06L N-Channel MOSFET March 2013 60 V, 52.4 A, 21 m Description N-Channel QFET MOSFET FQB50N06L / FQI50N06L This N-Channel enhancement mode power MOSFET is produced using , (Note 1) FQB50N06L / FQI50N06L 60 52.4 37.1 210 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A , Fairchild Semiconductor Corporation FQB50N06L / FQI50N06L Rev. C0 www.fairchildsemi.com FQB50N06L / FQI50N06L N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise


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PDF FQB50N06L FQI50N06L FQI50N06L
2001 - FQB50N06L

Abstract: FQI50N06L
Text: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features , (TC = 25°C) Drain Current FQB50N06L / FQI50N06L 60 Units V 52.4 A - Continuous (TC = , . A1. May 2001 FQB50N06L / FQI50N06L May 2001 Symbol TC = 25°C unless otherwise noted , Corporation Rev. A1. May 2001 FQB50N06L / FQI50N06L Electrical Characteristics FQB50N06L / FQI50N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0


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PDF FQB50N06L FQI50N06L FQI50N06L
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