The Datasheet Archive

SF Impression Pixel

Search Stock

Rochester Electronics LLC
FQI50N06TU MOSFET N-CH 60V 50A I2PAK
FQI50N06TU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key FQI50N06TU Bulk 1,792 445 - - - $0.67 $0.67 More Info
Rochester Electronics LLC
FQI50N06LTU MOSFET N-CH 60V 52.4A I2PAK
FQI50N06LTU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key FQI50N06LTU Tube 1,730 229 - - - $1.31 $1.31 More Info
onsemi
FQI50N06TU MOSFET N-CH 60V 50A I2PAK
FQI50N06TU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key FQI50N06TU Tube 0 1,000 - - - $0.7953 $0.7953 More Info
Avnet Americas FQI50N06TU Tube 0 4 Weeks 494 - - - $0.70854 $0.66805 More Info
Newark FQI50N06TU Bulk 0 1,000 - - $1.22 $1.22 $1.22 More Info
Farnell FQI50N06TU Tube 0 51 Weeks, 1 Days 1,000 - - - £0.667 £0.667 More Info
onsemi
FQI50N06LTU MOSFET N-CH 60V 52.4A I2PAK
FQI50N06LTU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key FQI50N06LTU Tube 0 1,000 - - - $0.5511 $0.5511 More Info
Avnet Americas FQI50N06LTU Bulk 0 4 Weeks 255 - - - $1.37592 $1.2973 More Info
Fairchild Semiconductor Corporation
FQI50N06LTU 52.4A, 60V, 0.025ohm, N-Channel Power MOSFET, TO-262AA
FQI50N06LTU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics FQI50N06LTU 1,730 $1.323 $1.323 $1.2701 $1.2172 $1.2172 More Info
Show More
Fairchild Semiconductor Corporation
FQI50N06TU Power Field-Effect Transistor, 50A, 60V, 0.022ohm, N-Channel, MOSFET, TO-262AA
FQI50N06TU ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics FQI50N06TU 1,792 $0.6813 $0.6813 $0.654 $0.6268 $0.6268 More Info

FQI50N06 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
FQI50N06 FQI50N06 ECAD Model Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF
FQI50N06 FQI50N06 ECAD Model Fairchild Semiconductor QFET N-CHANNEL Scan PDF
FQI50N06L FQI50N06L ECAD Model Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF
FQI50N06L FQI50N06L ECAD Model Fairchild Semiconductor QFET N-CHANNEL Scan PDF
FQI50N06LTU FQI50N06LTU ECAD Model Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 52.4A I2PAK Original PDF
FQI50N06LTU FQI50N06LTU ECAD Model Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF
FQI50N06TU FQI50N06TU ECAD Model Fairchild Semiconductor 60V N-Channel QFET Original PDF

FQI50N06 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FQB50N06

Abstract: FQI50N06
Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES Advanced New Design Avalanche Rugged Technology , I2-PAK FQB50N06 FQI50N06 1. Gate 2. Drain 3. Source FQB50N06, FQI50N06 QFET N-CHANNEL ELECTRICAL , FQI50N06 Fig 1. Output Characteristics VDS, Drain-Source Voltage [V , 15 20 25 Q , Total Gate Charge [nC] ISMMRCSMEIJE» SiMECÄSUßTSR 3 FQB50N06, FQI50N06 QFET , Temperature[°C] Fig 11. Thermal Response 4 PAIRCHILD QFET N-CHANNEL FQB50N06, FQI50N06 Fig 12. Gate


OCR Scan
PDF FQB50N06, FQI50N06 018i2 Dissipation06, D2PAK/TO-263 PAK/TO-263 FQB50N06 FQI50N06
Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60 V • Advanced New Design â , Semiconductor Corporation 1 QFET N-CHANNEL FQB50N06, FQI50N06 ELECTRICAL CHARACTERISTICS Symbol , " l iO a N D U C T C W ' JS K QFET N-CHANNEL FQB50N06, FQI50N06 Fig 1. Output , N-CHANNEL FQB50N06, FQI50N06 Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs , s ii QFET N-CHANNEL FQB50N06, FQI50N06 Fig 12. Gate Charge Test Circuit & Waveform Fig


OCR Scan
PDF FQB50N06, FQI50N06 022Cl D2PAK/TO-263 D2PAK/TO-263
2000 - Not Available

Abstract: No abstract text available
Text: Tape Width Quantity 330mm 24mm FQI50N06 FQI50N06TU I2-PAK - - 800 50 , FQB50N06 / FQI50N06 N-Channel QFET® MOSFET 60 V, 50 A, 22 mΩ Description Features This , Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted FQB50N06TM / FQI50N06TU 60 , FQB50N06TM FQI50N06TU Parameter Thermal Resistance, Junction to Case, Max. 1.24 Thermal Resistance , / FQI50N06 Rev. C1 1 o C/W 40 www.fairchildsemi.com FQB50N06 / FQI50N06 — N-Channel QFETÂ


Original
PDF FQB50N06 FQI50N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2


Original
PDF FQB50N06 FQI50N06 FQI50N06TU O-262
2001 - FQB50N06

Abstract: FQI50N06
Text: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , °C) Drain Current FQB50N06 / FQI50N06 60 Units V 50 A - Continuous (TC = 100°C) IDM , . A1. May 2001 FQB50N06 / FQI50N06 May 2001 Symbol TC = 25°C unless otherwise noted , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V


Original
PDF FQB50N06 FQI50N06 FQI50N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2


Original
PDF FQB50N06 FQI50N06
2000 - MOTOR DRIVER 48v 50A

Abstract: No abstract text available
Text: FQB50N06 / FQI50N06 N-Channel MOSFET March 2013 60 V, 50 A, 22 m Description N-Channel QFET MOSFET FQB50N06 / FQI50N06 This N-Channel enhancement mode power MOSFET is produced using , (Note 1) FQB50N06 / FQI50N06 60 50 35.4 200 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A , Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C0 www.fairchildsemi.com FQB50N06 / FQI50N06 N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise


Original
PDF FQB50N06 FQI50N06 FQI50N06 MOTOR DRIVER 48v 50A
2008 - FQB50N06

Abstract: FQI50N06
Text: QFET ® FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , (TC = 25°C) Drain Current FQB50N06 / FQI50N06 60 Units V 50 A - Continuous (TC = 100 , . A2. Oct 2008 FQB50N06 / FQI50N06 October 2008 Symbol TC = 25°C unless otherwise noted , Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V


Original
PDF FQB50N06 FQI50N06 FQI50N06
2008 - Not Available

Abstract: No abstract text available
Text: QFET ® FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , Continuous (TC = 25° C) Drain Current IDM Drain Current VGSS FQB50N06 / FQI50N06 60 EAS , / FQI50N06 October 2008 Symbol TC = 25° unless otherwise noted C Parameter Test Conditions , temperature ©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V


Original
PDF FQB50N06 FQI50N06 FQI50N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2


Original
PDF FQB50N06 FQI50N06 FQB50N06TM O-263
2000 - FQB50N06

Abstract: FQI50N06
Text: FQB50N06 / FQI50N06 April 2000 QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET , / FQI50N06 - Pulsed A 35.4 A 200 (Note 1) A ±25 V Single Pulsed Avalanche , Fairchild Semiconductor International Rev. A, April 2000 FQB50N06 / FQI50N06 Electrical , 1000 Crss 500 V GS , Gate-Source Voltage [V] 2500 Capacitance [pF] FQB50N06 / FQI50N06 , ] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQB50N06 / FQI50N06 Typical


Original
PDF FQB50N06 FQI50N06 FQI50N06
1999 - Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60V · · · · · · · · Advanced New Design , 1 2 3 RDS(ON) = 0.022 ID = 50A D2-PAK 2 I2-PAK FQB50N06 FQI50N06 1. Gate 2. Drain , © 1999 Fairchild Semiconductor Corporation FQB50N06, FQI50N06 QFET N-CHANNEL ELECTRICAL , Operating Temperature 2 QFET N-CHANNEL FQB50N06, FQI50N06 Fig 1. Output Characteristics 10 2 , Charge [nC] 3 FQB50N06, FQI50N06 QFET N-CHANNEL Fig 7. Breakdown Voltage vs. Temperature


Original
PDF FQB50N06, FQI50N06 FQB50N06
2002 - SSI5N60A

Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
Text: - - - 35 55 133 FQI50N06 60 Single 0.022 - - - 31 50 , 53 FQI13N06 60 Single 0.135 - - - 5.8 13 45 FQI50N06L 60


Original
PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Text: FQI33N10 FQI33N10L FQI34N20L FQI3N80 FQI46N15 FQI50N06 FQI50N06L FQI5N15 FQI6N15 FQI7N10L FQI7P20 FQI85N06


Original
PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Text: No file text available


Original
PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: No file text available


Original
PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Text: No file text available


Original
PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: No file text available


Original
PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: No file text available


Original
PDF
thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: No file text available


Original
PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2008 - FQB50N06L

Abstract: FQI50N06L
Text: QFET ® FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features , Continuous (TC = 25°C) Drain Current FQB50N06L / FQI50N06L 60 Units V 52.4 A - Continuous , Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06L / FQI50N06L October 2008 Symbol TC = 25 , Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06L / FQI50N06L Electrical Characteristics FQB50N06L / FQI50N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V


Original
PDF FQB50N06L FQI50N06L FQI50N06L
Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB50N06L, FQI50N06L FEATURES BVqss = 60V • Advanced New Design â , , FQI50N06L QFET N-CHANNEL ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise specified) Symbol , QFET N-CHANNEL FQB50N06L, FQI50N06L Fig 1. Output Characteristics Fig 2. Transfer , Voltage 3 FQB50N06L, FQI50N06L QFET N-CHANNEL Fig 7. Breakdown Voltage vs. Temperature -1 0 , FAIRCHILD SEMICONDUCTOR im QFET N-CHANNEL FQB50N06L, FQI50N06L Fig 12. Gate Charge Test Circuit &


OCR Scan
PDF FQB50N06L, FQI50N06L
2000 - Not Available

Abstract: No abstract text available
Text: FQB50N06L / FQI50N06L N-Channel MOSFET March 2013 60 V, 52.4 A, 21 m Description N-Channel QFET MOSFET FQB50N06L / FQI50N06L This N-Channel enhancement mode power MOSFET is produced using , (Note 1) FQB50N06L / FQI50N06L 60 52.4 37.1 210 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A , Fairchild Semiconductor Corporation FQB50N06L / FQI50N06L Rev. C0 www.fairchildsemi.com FQB50N06L / FQI50N06L N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise


Original
PDF FQB50N06L FQI50N06L FQI50N06L
2001 - FQB50N06L

Abstract: FQI50N06L
Text: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features , (TC = 25°C) Drain Current FQB50N06L / FQI50N06L 60 Units V 52.4 A - Continuous (TC = , . A1. May 2001 FQB50N06L / FQI50N06L May 2001 Symbol TC = 25°C unless otherwise noted , Corporation Rev. A1. May 2001 FQB50N06L / FQI50N06L Electrical Characteristics FQB50N06L / FQI50N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0


Original
PDF FQB50N06L FQI50N06L FQI50N06L
Supplyframe Tracking Pixel