The Datasheet Archive

FQI30N06 datasheet (2)

Part Manufacturer Description Type PDF
FQI30N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF
FQI30N06L Fairchild Semiconductor 60V LOGIC N-Channel MOSFET Original PDF

FQI30N06 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - Not Available

Abstract: No abstract text available
Text: /pricing/packaging Product Folder - Fairchild P/N FQI30N06 - 60V N-Channel QFET Product FQI30N06TU , FQB30N06 / FQI30N06 May 2001 QFET FQB30N06 / FQI30N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB30N06 / FQI30N06 60 30 , . May 2001 FQB30N06 / FQI30N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , 2001 FQB30N06 / FQI30N06 Typical Characteristics 10 2 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0


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PDF FQB30N06 FQI30N06 FQI30N06 FQI30N06TU O-262
2000 - fqb30n06

Abstract: FQI30N06
Text: FQB30N06 / FQI30N06 April 2000 QFET TM FQB30N06 / FQI30N06 60V N-Channel MOSFET , 25°C unless otherwise noted Parameter ID IDM Drain Current FQB30N06 / FQI30N06 - , Fairchild Semiconductor International Rev. A, April 2000 FQB30N06 / FQI30N06 Electrical , . On-Resistance Variation vs. Drain Current and Gate Voltage Capacitance [pF] FQB30N06 / FQI30N06 , . Gate Charge Characteristics Rev. A, April 2000 FQB30N06 / FQI30N06 Typical Characteristics


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PDF FQB30N06 FQI30N06 FQI30N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB30N06 / FQI30N06 May 2001 QFET FQB30N06 / FQI30N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB30N06 / FQI30N06 60 30 , . May 2001 FQB30N06 / FQI30N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , 2001 FQB30N06 / FQI30N06 Typical Characteristics 10 2 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 , Characteristics ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB30N06 / FQI30N06


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PDF FQB30N06 FQI30N06 FQB30N06TM O-263
2001 - FQB30N06

Abstract: FQI30N06
Text: QFET TM FQB30N06 / FQI30N06 60V N-Channel MOSFET General Description Features These , °C) Drain Current FQB30N06 / FQI30N06 60 Units V 30 A - Continuous (TC = 100°C) IDM , . A1. May 2001 FQB30N06 / FQI30N06 May 2001 Symbol TC = 25°C unless otherwise noted , Semiconductor Corporation Rev. A1. May 2001 FQB30N06 / FQI30N06 Electrical Characteristics FQB30N06 / FQI30N06 Typical Characteristics 10 Top : ID, Drain Current [A] ID, Drain Current [A] 2


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PDF FQB30N06 FQI30N06 40ner FQI30N06
2002 - sfi9520

Abstract: HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
Text: 120 FQI30N06 60 Single 0.04 - - - 19 30 79 RF1S25N06 60 Single , Single 0.021 0.025@5V - - 24.5 52 121 FQI30N06L 60 Single 0.035


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PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 sfi9520 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 FQI20N06 FQI13N06
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Text: No file text available


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
2000 - Not Available

Abstract: No abstract text available
Text: FQB30N06L / FQI30N06L N-Channel MOSFET March 2013 N-Channel QFET MOSFET 60 V, 32 A, 35 m Description FQB30N06L / FQI30N06L This N-Channel enhancement mode power MOSFET is produced using , ) FQB30N06L / FQI30N06L 60 32 22.6 128 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V , Semiconductor Corporation FQB30N06L / FQI30N06L Rev.C0 www.fairchildsemi.com FQB30N06L / FQI30N06L , / FQI30N06L Rev.C0 www.fairchildsemi.com FQB30N06L / FQI30N06L N-Channel MOSFET Typical


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PDF FQB30N06L FQI30N06L FQI30N06L
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
Text: No file text available


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PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
2001 - Not Available

Abstract: No abstract text available
Text: FQB30N06L / FQI30N06L May 2001 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET , / FQI30N06L 60 32 22.6 128 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C , Rev. A1. May 2001 FQB30N06L / FQI30N06L Electrical Characteristics Symbol Parameter TC = 25 , / FQI30N06L Typical Characteristics 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB30N06L / FQI30N06L Typical


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PDF FQB30N06L FQI30N06L FQB30N06LTM O-263
2008 - FQB30N06L

Abstract: FQI30N06L
Text: QFET ® FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features , Voltage - Continuous (TC = 25°C) Drain Current FQB30N06L / FQI30N06L 60 Units V 32 A - , Corporation Rev. A2. Oct 2008 FQB30N06L / FQI30N06L October 2008 Symbol TC = 25°C unless , Rev. A2. Oct 2008 FQB30N06L / FQI30N06L Electrical Characteristics FQB30N06L / FQI30N06L , , (Normalized) Drain-Source Breakdown Voltage FQB30N06L / FQI30N06L Typical Characteristics 1.5 1.0


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PDF FQB30N06L FQI30N06L FQI30N06L
2008 - Not Available

Abstract: No abstract text available
Text: QFET ® FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features , Continuous (TC = 25°C) Drain Current IDM Drain Current VGSS FQB30N06L / FQI30N06L 60 EAS , Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB30N06L / FQI30N06L October 2008 Symbol , ©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB30N06L / FQI30N06L Electrical Characteristics FQB30N06L / FQI30N06L Typical Characteristics 10 Top : ID, Drain


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PDF FQB30N06L FQI30N06L FQI30N06L
2001 - FQB30N06L

Abstract: FQI30N06L
Text: QFET TM FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features , (TC = 25°C) Drain Current FQB30N06L / FQI30N06L 60 Units V 32 A - Continuous (TC = , . A1. May 2001 FQB30N06L / FQI30N06L May 2001 Symbol TC = 25°C unless otherwise noted , FQB30N06L / FQI30N06L Electrical Characteristics FQB30N06L / FQI30N06L Typical Characteristics , ) Drain-Source Breakdown Voltage FQB30N06L / FQI30N06L Typical Characteristics 1.0 Notes : 1. VGS =


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PDF FQB30N06L FQI30N06L FQI30N06L
2001 - Not Available

Abstract: No abstract text available
Text: FQB30N06L / FQI30N06L May 2001 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET , / FQI30N06L 60 32 22.6 128 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C , Rev. A1. May 2001 FQB30N06L / FQI30N06L Electrical Characteristics Symbol Parameter TC = 25 , / FQI30N06L Typical Characteristics 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB30N06L / FQI30N06L Typical


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PDF FQB30N06L FQI30N06L FQI30N06L FQI30N06LTU O-262
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
Text: No file text available


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PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 Diode 1N4001 50V 1.0A DO-41 Rectifier Diode BZX85C6V8 SPICE MODEL K*D1691 make SMPS inverter welding machine 1N5402 spice model transistor KSP44 tip122 tip127 mosfet audio amp
Text: No file text available


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