The Datasheet Archive

FQI20N06 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
FQI20N06 FQI20N06 ECAD Model Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF
FQI20N06L FQI20N06L ECAD Model Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF
FQI20N06L FQI20N06L ECAD Model Fairchild Semiconductor QFET N-CHANNEL Scan PDF

FQI20N06 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - FQB20N06

Abstract: FQI20N06
Text: QFET TM FQB20N06 / FQI20N06 60V N-Channel MOSFET General Description Features These , Current FQB20N06 / FQI20N06 60 Units V 20 A - Continuous (TC = 100°C) IDM Drain , / FQI20N06 May 2001 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min , Corporation Rev. A1. May 2001 FQB20N06 / FQI20N06 Electrical Characteristics FQB20N06 / FQI20N06 , , (Norm alized) Drain-Source Breakdown Voltage FQB20N06 / FQI20N06 Typical Characteristics 1.5


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PDF FQB20N06 FQI20N06 FQI20N06
2001 - Not Available

Abstract: No abstract text available
Text: FQB20N06 / FQI20N06 May 2001 QFET FQB20N06 / FQI20N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB20N06 / FQI20N06 60 20 , . May 2001 FQB20N06 / FQI20N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , FQB20N06 / FQI20N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V , ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB20N06 / FQI20N06 Typical


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PDF FQB20N06 FQI20N06 FQI20N06TU O-262
2000 - FQB20N06

Abstract: FQI20N06
Text: FQB20N06 / FQI20N06 April 2000 QFET TM FQB20N06 / FQI20N06 60V N-Channel MOSFET , / FQI20N06 - Pulsed A 14.1 A 80 (Note 1) A ±25 V Single Pulsed Avalanche Energy , Fairchild Semiconductor International Rev. A, April 2000 FQB20N06 / FQI20N06 Electrical , Current and Gate Voltage Capacitance [pF] FQB20N06 / FQI20N06 Typical Characteristics VDS = , Characteristics Rev. A, April 2000 FQB20N06 / FQI20N06 Typical Characteristics (Continued) 1.2


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PDF FQB20N06 FQI20N06 FQI20N06
2002 - SSI5N60A

Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
Text: 0.047 - - - 35 25 72 FQI20N06 60 Single 0.06 - - - 11.5 20 , 0.045@5V - - 15 32 79 FQI20N06L 60 Single 0.055 0.07@5V - - 9.5


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PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Text: (Continued) Product FQI16N25 FQI17N08 FQI17P06 FQI19N20L FQI1N60 FQI1P50 FQI20N06 FQI20N06L FQI22P10 FQI2P40


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PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: No file text available


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
2001 - Not Available

Abstract: No abstract text available
Text: FQB20N06L / FQI20N06L May 2001 QFET FQB20N06L / FQI20N06L 60V LOGIC N-Channel MOSFET , / FQI20N06L 60 21 14.7 84 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C , Rev. A1. May 2001 FQB20N06L / FQI20N06L Electrical Characteristics Symbol Parameter TC = 25 , temperature ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB20N06L / FQI20N06L , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB20N06L / FQI20N06L Typical


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PDF FQB20N06L FQI20N06L FQB20N06LTM O-263
FQB20N06L

Abstract: FQI20N06L
Text: QFET N-CHANNEL FQB20N06L, FQI20N06L FEATURES Advanced New Design Avalanche Rugged Technology , FQB20N06L FQI20N06L 1. Gate 2. Drain 3. Source Symbol Characteristics Value Units vdss Drain-to-Source , Mount) FA1RCHILD 1 SEMICONDUCTOR im © 1999 Fairchild Semiconductor Corporation FQB20N06L, FQI20N06L , N-CHANNEL FQB20N06L, FQI20N06L Fig 1. Output Characteristics Fig 2. Transfer Characteristics V , 8 12 16 20 Q Total Gate Charge [nC] FAIRCHILD SEMICONDUCTOR im 3 FQB20N06L, FQI20N06L QFET


OCR Scan
PDF FQB20N06L, FQI20N06L FQB20N06L FQI20N06L
Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB20N06L, FQI20N06L FEATURES BVqss = 60V • Advanced New Design â , , FQI20N06L QFET N-CHANNEL ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise specified) Symbol , QFET N-CHANNEL FQB20N06L, FQI20N06L Fig 1. Output Characteristics Fig 2. Transfer , Charge [nC] FAIRCHILD SEMICONDUCTOR im 3 FQB20N06L, FQI20N06L QFET N-CHANNEL Fig 7 , FQB20N06L, FQI20N06L Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test


OCR Scan
PDF FQB20N06L, FQI20N06L
1999 - Not Available

Abstract: No abstract text available
Text: QFET N-CHANNEL FQB20N06L, FQI20N06L FEATURES BVDSS = 60V · · · · · · · · Advanced New Design , 1 2 3 RDS(ON) = 0.055 ID = 21A D2-PAK 2 I2-PAK FQB20N06L FQI20N06L 1. Gate 2 , Fairchild Semiconductor Corporation FQB20N06L, FQI20N06L QFET N-CHANNEL ELECTRICAL CHARACTERISTICS , Independent of Operating Temperature 2 QFET N-CHANNEL FQB20N06L, FQI20N06L Fig 1. Output , 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FQB20N06L, FQI20N06L


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PDF FQB20N06L, FQI20N06L FQB20N06L
2000 - FQB20N06L

Abstract: FQI20N06L
Text: FQB20N06L / FQI20N06L April 2000 QFET TM FQB20N06L / FQI20N06L 60V LOGIC N-Channel , FQB20N06L / FQI20N06L - Pulsed A 14.7 A 84 (Note 1) A ±20 V Single Pulsed , International Rev. A, April 2000 FQB20N06L / FQI20N06L Electrical CharacteristicsT VGS 10.0 V 8.0 , , Gate-Source Voltage [V] 10 Capacitance [pF] FQB20N06L / FQI20N06L Typical Characteristics VDS = , Characteristics Rev. A, April 2000 FQB20N06L / FQI20N06L Typical Characteristics (Continued) 1.2


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PDF FQB20N06L FQI20N06L FQI20N06L
CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: FQI20N06L FQP20N06L IRLZ34 IRFZ24V IRFZ24VS N Channel Product TO-220/TO-263 Package BVds Part


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PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
2001 - FQB20N06L

Abstract: FQI20N06L
Text: QFET TM FQB20N06L / FQI20N06L 60V LOGIC N-Channel MOSFET General Description Features , (TC = 25°C) Drain Current FQB20N06L / FQI20N06L 60 Units V 21 A - Continuous (TC = , . A1. May 2001 FQB20N06L / FQI20N06L May 2001 Symbol TC = 25°C unless otherwise noted , Rev. A1. May 2001 FQB20N06L / FQI20N06L Electrical Characteristics FQB20N06L / FQI20N06L , BV DSS , (Norm alized) Drain-Source Breakdown Voltage FQB20N06L / FQI20N06L Typical


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PDF FQB20N06L FQI20N06L FQI20N06L
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