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ON Semiconductor
FQD13N10LTM Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R (Alt: FQD13N10LTM)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (3) FQD13N10LTM Tape and Reel 10,000 5 Weeks, 2 Days 2,500 - - - - €0.2349 More Info
FQD13N10LTM Reel 0 5 Weeks 2,500 - - - - $0.1949 More Info
FQD13N10LTM Tape and Reel 0 5 Weeks 2,500 - - - - $0.23196 More Info
Newark element14 (2) FQD13N10LTM Cut Tape 290 1 $0.673 $0.561 $0.368 $0.299 $0.299 More Info
FQD13N10LTM Reel 0 1 $0.25 $0.25 $0.25 $0.25 $0.241 More Info
RS Components (2) FQD13N10LTM Package 1,140 5 - £0.458 £0.238 £0.238 £0.238 More Info
FQD13N10LTM Reel 2,675 50 - - £0.238 £0.238 £0.238 More Info
TME Electronic Components FQD13N10LTM 1,548 3 - $0.35 $0.25 $0.23 $0.21 More Info
Chip1Stop FQD13N10LTM Cut Tape 279 1 $3.19 $0.609 $0.412 $0.365 $0.365 More Info
More Distributors
element14 Asia-Pacific (2) FQD13N10LTM 669 1 $1.02 $0.839 $0.541 $0.434 $0.434 More Info
FQD13N10LTM 0 1 $1.02 $0.839 $0.541 $0.434 $0.434 More Info
Farnell element14 FQD13N10LTM 290 5 - £0.454 £0.259 £0.202 £0.202 More Info
ON Semiconductor
FQD13N10TM Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N10TM)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (3) FQD13N10TM Reel 0 5 Weeks 2,500 - - - - $0.2159 More Info
FQD13N10TM Tape and Reel 0 5 Weeks, 2 Days 2,500 - - - - €0.2129 More Info
FQD13N10TM Tape and Reel 0 5 Weeks 2,500 - - - - $0.18536 More Info
Newark element14 (2) FQD13N10TM Reel 0 1 $0.243 $0.243 $0.243 $0.243 $0.233 More Info
FQD13N10TM Cut Tape 1,864 1 $0.672 $0.554 $0.364 $0.294 $0.294 More Info
Future Electronics FQD13N10TM Reel 5,000 2,500 - - - - $0.22 More Info
Rochester Electronics FQD13N10TM 5,000 1 $0.41 $0.41 $0.36 $0.33 $0.33 More Info
RS Components FQD13N10TM Reel 1,795 25 - - £0.15 £0.15 £0.15 More Info
More Distributors
TME Electronic Components FQD13N10TM 2,072 3 - $0.35 $0.25 $0.23 $0.21 More Info
element14 Asia-Pacific (2) FQD13N10TM 0 1 $1.02 $0.831 $0.537 $0.429 $0.429 More Info
FQD13N10TM 1,864 1 $1.02 $0.831 $0.537 $0.429 $0.429 More Info
Farnell element14 FQD13N10TM 1,939 5 - £0.453 £0.246 £0.194 £0.194 More Info
Fairchild Semiconductor Corporation
FQD13N10LTM Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics FQD13N10LTM 1,953 1 $0.32 $0.32 $0.29 $0.26 $0.26 More Info
Bristol Electronics FQD13N10LTM 11,006 - - - - - More Info
New Advantage Corporation FQD13N10LTM 8,413 8,413 - - - - $0.4545 More Info
Fairchild Semiconductor Corporation
FQD13N10TM Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics FQD13N10TM 8,242 1 $0.31 $0.31 $0.27 $0.25 $0.25 More Info
Bristol Electronics FQD13N10TM 5,000 - - - - - More Info
Fairchild Semiconductor Corporation
FQD13N10L
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics FQD13N10L 618 - - - - - More Info
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Fairchild Semiconductor Corporation
FQD13N10TF Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. FQD13N10TF 1,862 - - - - - More Info

FQD13N10 datasheet (10)

Part Manufacturer Description Type PDF
FQD13N10 Fairchild Semiconductor 100V N-Channel MOSFET Original PDF
FQD13N10L Fairchild Semiconductor 100 V Logic N-Channel MOSFET Original PDF
FQD13N10LTF Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
FQD13N10LTM Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
FQD13N10LTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF
FQD13N10LTM_NBEL001 Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
FQD13N10TF Fairchild Semiconductor 100V N-Channel QFET Original PDF
FQD13N10TF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF
FQD13N10TM Fairchild Semiconductor 100V N-Channel QFET Original PDF
FQD13N10TM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF

FQD13N10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - Not Available

Abstract: No abstract text available
Text: * Package type Leads Packing method FQD13N10TF FQD13N10TM Full Production Full Production $0.403 , FQD13N10 / FQU13N10 January 2001 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General , 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD13N10 / FQU13N10 , , January 2001 FQD13N10 / FQU13N10 Electrical Characteristics Symbol Parameter TC = 25°C unless , Rev. A1, January 2001 FQD13N10 / FQU13N10 Typical Characteristics 10 1 ID, Drain


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PDF FQD13N10 FQU13N10 FQD13N10TF FQD13N10TM O-252
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N10 / FQU13N10 N-Channel MOSFET March 2013 N-Channel QFET MOSFET 100 V, 10 A, 180 m Description FQD13N10 / FQU13N10 This N-Channel enhancement mode power MOSFET is produced using Fairchild , 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD13N10 / FQU13N10 , the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQD13N10 / FQU13N10 Rev. C0 www.fairchildsemi.com FQD13N10 / FQU13N10 N-Channel MOSFET Electrical


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PDF FQD13N10 FQU13N10 FQU13N10
2009 - Not Available

Abstract: No abstract text available
Text: QFET ® FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These , Drain-Source Voltage - Continuous (TC = 25° C) Drain Current FQD13N10 / FQU13N10 100 10 Drain , (PCB Mount) ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD13N10 / FQU13N10 , temperature ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD13N10 / FQU13N10 Electrical Characteristics FQD13N10 / FQU13N10 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V


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PDF FQD13N10 FQU13N10
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N10 / FQU13N10 May 2000 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General , 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD13N10 / FQU13N10 , 2000 FQD13N10 / FQU13N10 Electrical Characteristics Symbol Parameter TC = 25°C unless , Rev. A, May 2000 FQD13N10 / FQU13N10 Typical Characteristics 10 1 ID, Drain Current [A , FQD13N10 / FQU13N10 Typical Characteristics (Continued) 1.2 2.5 BV DSS , (Normalized


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PDF FQD13N10 FQU13N10
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N10 N-Channel QFET® MOSFET 100 V, 10 A, 180 mΩ Description Features This , noted. FQD13N10TM 100 Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current , RJC RJA Parameter FQD13N10TM 3.13 Thermal Resistance, Junction to Case, Max. Thermal , Ambient (*1 in Pad of 2-oz Copper), Max. ©2000 Fairchild Semiconductor Corporation FQD13N10 Rev. C1 Unit 1 110 oC/W 50 www.fairchildsemi.com FQD13N10 — N-Channel QFET® MOSFET


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PDF FQD13N10
2000 - FQD13N10

Abstract: No abstract text available
Text: FQD13N10 / FQU13N10 N-Channel MOSFET March 2013 N-Channel QFET MOSFET 100 V, 10 A, 180 m Description FQD13N10 / FQU13N10 This N-Channel enhancement mode power MOSFET is produced using Fairchild , Current - Pulsed (Note 1) FQD13N10 / FQU13N10 100 10 6.3 40 ± 25 (Note 2) (Note 1) (Note 1) (Note 3 , Fairchild Semiconductor Corporation FQD13N10 / FQU13N10 Rev. C0 www.fairchildsemi.com FQD13N10 , FQD13N10 / FQU13N10 Rev. C0 www.fairchildsemi.com FQD13N10 / FQU13N10 N-Channel MOSFET Typical


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PDF FQD13N10 FQU13N10 FQU13N10
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N10 / FQU13N10 January 2001 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General , 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD13N10 / FQU13N10 , , January 2001 FQD13N10 / FQU13N10 Electrical Characteristics Symbol Parameter TC = 25°C unless , Rev. A1, January 2001 FQD13N10 / FQU13N10 Typical Characteristics 10 1 ID, Drain , International Rev. A1, January 2001 FQD13N10 / FQU13N10 Typical Characteristics (Continued) 1.2


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PDF FQD13N10 FQU13N10 FQU13N10 FQU13N10TU O-251
2009 - FQD13N10

Abstract: FQU13N10
Text: QFET ® FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These , Continuous (TC = 25°C) Drain Current FQD13N10 / FQU13N10 100 Units V 10 A 6.3 A 40 , . A2. January 2009 FQD13N10 / FQU13N10 January 2009 Symbol TC = 25°C unless otherwise , temperature ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD13N10 / FQU13N10 Electrical Characteristics FQD13N10 / FQU13N10 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V


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PDF FQD13N10 FQU13N10 FQU13N10
2000 - FQD13N10

Abstract: FQU13N10
Text: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These , °C) Drain Current FQD13N10 / FQU13N10 100 Units V 10 A - Continuous (TC = 100°C) IDM , , January 2001 FQD13N10 / FQU13N10 January 2001 Symbol TC = 25°C unless otherwise noted , Fairchild Semiconductor International Rev. A1, January 2001 FQD13N10 / FQU13N10 Electrical Characteristics FQD13N10 / FQU13N10 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V


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PDF FQD13N10 FQU13N10 FQU13N10
2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
Text: Transistor Reset Switches PWM Controllers BSS123 FQD8P10 FAN7554 FQD13N10 /L FQT5P10 UC384X BSS123 FQD8P10 FAN7554 FQD13N10 /L FQT5P10 FQD7N10 UC384X FQD7N10 FAN7554


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PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
2002 - FDD5614P

Abstract: SS*2n60b FQD7P20 SFR9224 FDD6512A FDD6670A FDD6644 MOSFET TO-252 FDD3706 IRFR420A
Text: 27 13 41 FQD13N10 100 Single 0.18 - - - 12 10 40 IRFR120A , 0.165 - - 13 10 49 FQD13N10L 100 Single 0.18 0.2@5V - - 8.7 10


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PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 FDD5614P SS*2n60b FQD7P20 SFR9224 FDD6512A FDD6670A FDD6644 MOSFET TO-252 FDD3706 IRFR420A
CEP83A3 equivalent

Abstract: CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: HUF75617D3 HUFA75617D3 FQD19N10 FQD13N10 IRFR120Z FQU13N10 IRFU120Z 120 CED1012 IRFR3910


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PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP83A3 equivalent CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
2007 - FQPF8N60C equivalent

Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent 200w dc to ac inverter Circuit diagram FAN7601 FAN7601 equivalent FAN7529 equivalent FDD6685 equivalent FQPF10N60C equivalent
Text: Package FQD13N10 N Single 100 0.18 12 10 40 FQD19N10 N Single 100 , 10 49 TO-252 (DPAK) FQD13N10 N Single 100 0.18 12 10 40 TO-252 (DPAK


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2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: FQB85N06 FQB8N25 FQB8N60C FQB90N08 FQB9N25 FQB9N25C FQB9N50 FQD10N20L FQD11P06 FQD13N06L FQD13N10


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
Text: No file text available


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PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
Text: HUF75617D3S HUFA75617D3S FQD19N10 FQD19N10L IRLR130A IRFR130A HUF76609D3S HUFA76609D3S FQD13N10 , www.fairchildsemi.com Qg (nC) Typ BVDSS Products Min (V) TO-252(DPAK) N-Channel FQD13N10L IRLR120A


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PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Text: HUF76609D3S 100 HUFA76609D3S 100 FQD13N10 100 FQD13N10L 100 IRFR120A 100 IRLR120A 100 IRFR120 100


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 Diode 1N4001 50V 1.0A DO-41 Rectifier Diode BZX85C6V8 SPICE MODEL K*D1691 make SMPS inverter welding machine 1N5402 spice model transistor KSP44 tip122 tip127 mosfet audio amp
Text: No file text available


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thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: No file text available


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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N10L / FQU13N10L August 2000 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET , Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD13N10L , . A2, August 2000 FQD13N10L / FQU13N10L Electrical Characteristics Symbol Parameter TC = 25 , operating temperature ©2000 Fairchild Semiconductor International Rev. A2, August 2000 FQD13N10L , Fairchild Semiconductor International Rev. A2, August 2000 FQD13N10L / FQU13N10L Typical


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PDF FQD13N10L FQU13N10L
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N10L / FQU13N10L N-Channel QFET® MOSFET 100 V, 10 A, 180 mΩ Description This , Continuous (TC = 25°C) Drain Current FQD13N10L / FQU13N10L 100 Unit V 10 A 6.3 - , 6.0 2.5 mJ V/ns W 40 0.32 -55 to +150 W W/°C °C 300 °C FQD13N10L , Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 www.fairchildsemi.com FQD13N10L , Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 www.fairchildsemi.com FQD13N10L


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PDF FQD13N10L FQU13N10L
2000 - FQD13N10L

Abstract: FQU13N10L
Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features , FQD13N10L / FQU13N10L 100 Units V 10 A - Continuous (TC = 100°C) IDM Drain Current - , (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A4, December 2000 FQD13N10L , temperature ©2000 Fairchild Semiconductor International Rev. A4, December 2000 FQD13N10L / FQU13N10L Electrical Characteristics FQD13N10L / FQU13N10L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V


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PDF FQD13N10L FQU13N10L FQU13N10L
2000 - fqd13n10l

Abstract: No abstract text available
Text: FQD13N10L / FQU13N10L N-Channel MOSFET March 2013 N-Channel QFET MOSFET 100 V, 10 A, 180 m Description FQD13N10L / FQU13N10L This N-Channel enhancement mode power MOSFET is produced using , Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD13N10L / FQU13N10L 100 10 6.3 40 ± 20 (Note 2 , (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C0 www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel MOSFET Electrical Characteristics Symbol Parameter TC =


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PDF FQD13N10L FQU13N10L FQU13N10L
2000 - Not Available

Abstract: No abstract text available
Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This , Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD13N10L / FQU13N10L 100 Unit V 10 , 300 °C FQD13N10L / FQU13N10L Unit °C/W dv/dt PD - Pulsed (Note 1) ± 20 , ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C1 www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET MOSFET A 2013 June 2013 Symbol TC = 25°C unless otherwise


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PDF FQD13N10L FQU13N10L
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