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FPM-70 datasheet (6)

Part Manufacturer Description Type PDF
FPM-70PG Fujikura Sensing element/Gauge Original PDF
FPM-70PG Fijikura High Accuracy, Low Prices, Plastic Mould Dip Type Pressure Sensors Scan PDF
FPM-70PG Fujikura High Accuracy, Low Priced Plastic Mold DIP Type - Pressure Sensor IC Scan PDF
FPM-70PGR Fujikura Sensing element/Gauge Original PDF
FPM-70PGR Fijikura High Accuracy, Low Prices, Plastic Mould Dip Type Pressure Sensors Scan PDF
FPM-70PGR Fujikura High Accuracy, Low Priced Plastic Mold DIP Type - Pressure Sensor IC Scan PDF

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d 100 d

Abstract: Y514100A HYM532220
Text: EDO, SL, ECC FPM, SL, ECC 4MB 1M X 32 EDO, SL FPM, SL 1M X 36 BMB 2M X SPEED 60/ 70 /80 60/ 70 /80 , x 4 HY51V4403BT x 2 HY51V16404AT X 8 HY51V17404AT x8 HY51V16400AT x8 HY51V17400AT x8 60/ 70 /80 60/ 70 /80 HYM5V64204AX/ATX HYM5V64224AX/ATX HYM5V64200AX/ATX HYM5V64220AX/ATX HYM5V72A220ATX , HYM5V72A400ATN HYM5V72A410ATN 60/ 70 /80 60/ 70 /80 4K 1K 4K IK 1K 4K 2K 4K 2K 4K 2K 4K 2K 1K 1K 1K 1K 1K 1K 1K 4K 2K 4K 2K 60/ 70 /80 60/ 70 /80 60/ 70 /B0 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70


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PDF HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220
HY5118160JC

Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: HYM591000BM SPEEp50/60/ 70 60/ 70 R EF. D EV ICE U S E D AVAILABILITY 30 Pin SIMM 1MB IK , HYM584000DM HYM594000AM HYM594000DM 50/60/ 70 50/60/ 70 50/60/ 70 IK 2K IK 2K HY514100AJ x 8 HY5117400AJ , 1M > : 32 EDO.SL FPM .L FPM .SL HYM532124AW/ATW HYM 532100AM HYM532120W/TW HYM536100AM 60/ 70 /80 50/60/ 70 70 /80/100 60/ 70 IK IK IK IK HY5118164BJ/BT x 2 HY514400AJ x 8 HY5118160JC/TC x 2 HY514400AJX8 HY531000AJ x 4 1M x 36 FPM ,L HYM536103M/TM 50/60/ 70 IK HY514400AJ/AT x 8


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PDF HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
HY5118164B

Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
Text: DRAM PRODUCT DESCRIPTION PART NO. PACKAGE OPTION ACCESS TIME(ns) OPERATING CURRENT (mA.MAX) 120/100/90 120/100/90 90/80/ 70 90/80/ 70 160/150/140 170/150/130 160/150/140 170/150/130 120/100/90 As of '96.3Q STANDBY CURRENT (mA,MAX) TTL l l l 2 2 2 2 2 2 AVAILABILITY CMOS 0.5 0.5 0.5 1 1 , (300mil) 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 /80 1MX16 Fast , HY5117800B HY5117804B HY51V17800B HY51 VI 7804B 60/ 70 /80 120/100/90 1 0.5 NOW NOTE: We have


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PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B
HYM532814

Abstract: HYM532214AE60 hy5118160bjc HY531000AJ HYM532224 HYM536100AM HY51178048J HY5118160JC HY5118160 HYM536A814BM
Text: NO. HYM532124AW/ATW H YM 532100AM HYM532120W/TW HYMS32120AW/ATW SPEED REF. 60/ 70 /80 50/60/ 70 70 /80/100 60/ 70 /80 60/ 70 70 /80 60/ 70 /80 IK 1K 1K 1K 1K 1K 1K IK 1K 2K IK 1K IK 1K 2K 1K 1K 1K 2K 2K 2K , 60/ 70 /80 HYM532224AE HYM532214AE 60/ 70 /80 60/ 70 /80 50/60/ 70 70 /80/100 60/ 70 /80 60/ 70 /80 60/ 70 /80 60/ 70 70 /80 60/ 70 /80 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 50/60/ 70 FPM, L FPM, S L HYM532200AM HYM532220W/TW HYM532220AW


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PDF HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532214AE60 hy5118160bjc HYM532224 HYM536100AM HY51178048J HY5118160JC HY5118160 HYM536A814BM
1998 - 4Mx4 dram simm

Abstract: TTP32 SIMM72 dram card 60 pin 334k 4Mx8 dram simm 4MX16* dram fpm 8KX8 32MByte TTP42
Text: , 4k refresh, unbuffered HB56A1632 64MByte MOD FPM_Module 16Mx32 70 ; 60; 50 SIMM-72 5.0 no HB56A1636 64MByte MOD FPM_Module 16Mx32 50; 60; 70 SIMM-72 5.0 1 bank, 4k refresh HB56A264EJ 16MByte MOD FPM_Module 2Mx64 50; 60; 70 DIMM , ; 70 DIMM-168 5.0 buffered, 1 bank, 2k refresh HB56A432BR/SBR 16MByte MOD FPM_Module 4Mx32 60; 70 SIMM-72 5.0 unbuffered, 2k refresh, low power version HB56A440BR


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PDF ATA-68 CF-50 15MByte HB286015C3 HB286030A3 30MByte 4Mx4 dram simm TTP32 SIMM72 dram card 60 pin 334k 4Mx8 dram simm 4MX16* dram fpm 8KX8 32MByte TTP42
PLC material fluid flow sensor

Abstract: flow sensor switch 15DN DIODE water flow sensor dn 32 DN25 DN40 PN16 S010 reed contact
Text: 0.15 <- 0.22 7.0 10.5 0.42 0.63 25 0.40 -> 0.60 11.8 17.7 0.71 , Z 70 60 D 80 70 reed contact 80 Flow rate decreases for DC switching , /min) 80 70 60 60 50 50 40 40 30 30 20 20 10 screw for switching point adjustment 80 70 10 DN 25 Orifice Dimensions F [mm] [mm] 15 20


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PDF 001-GB/ PLC material fluid flow sensor flow sensor switch 15DN DIODE water flow sensor dn 32 DN25 DN40 PN16 S010 reed contact
1995 - MT41LC256K32D4

Abstract: BEDO RAM MT4LC4M4G6 MT4C16270 Matsushita fp-m ACC micro MT4LC1M16E5 MT4LC1M16C3 MT4C4001J MT4C16257
Text: ) MT4C16270 MT4LC1M16C3 MT4LC1M16E5 MT4LC1M16H5 60 60 60 60, 70 60, 70 52,60, 70 60, 70 60, 70 52,60, 70 60, 70 60, 70 502 ,60, 70 60, 70 60, 70 52,60, 70 - 20/26 20/26 20/26 24/26 24/26 24/26 , MT16D164(X) MT4LD(T)164(X)(B)(N) MT8LDT264(X)(B)(N) MT16LDT464(X)(B)(N) MT9LDT272(X)(B)(N) 60, 70 60, 70 60, 70 523,60, 70 523,60, 70 523,60, 70 523,60, 70 60, 70 523,60, 70 523,60, 70 60, 70 60, 70 60, 70 60, 70 523,60, 70 523,60, 70 523,60, 70 523,60, 70 72 72 72 72 72 72 72 72 72 72 -


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1997 - 3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
Text: HB56U132 4M (x4) based 5V 60, 70 SIMM 72 16M (x16) based / 1M x 32 HB56H132 1k cycles 4M (x4) based / HB56U232 60, 70 , 80 2k cycles 5V SIMM 72 2M x 32 16M (x16) based / HB56H232 60, 70 1k cycles 16M (x4) based / 60, 70 , 80 SIMM 72 4M x 32 HB56U432 5V 2k cycles 16M (x4) based / 60, 70 , 80 SIMM , DRAM Modules Vcc Access Time (ns) Package Partname HB56U164 5V HB56H164 1M x 64 60, 70 , 60, 70 , 80 60, 70 60, 70 60, 70 , 80 4M x 64 HB56UW465 3.3V HB56SW464 60, 70 HB56HW465


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PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
DM-60

Abstract: No abstract text available
Text: 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 SYMBOL Vss 0E2# RAS2 , . -IV to +5.5V Operating Temperature, TA (am bient) 0°C to + 70 °C Storage Temperature (plastic , 3 10 35 5 70 5 45 20 15 0 3 20 20 10,000 50 0 0 55 15 15 20 15 3 10 40 10,000 MIN 6 M AX 30 55 0 0 , 60 110 20 0 0 32 50 0 0 20 180 95 20 3 15 55 0 15 10 10 50 10,000 100,000 MIN 85 60 15 10 70 70 130 20 0 0 32 10,000 100,000 6 MAX MIN 95 70 7 MAX UNITS ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns ns


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PDF MT9LD272A MT18LD472A MT36LD872A 168-pin, 048-cycle 168-PIN DM-60
2000 - 321606-S54T15TD

Abstract: No abstract text available
Text: 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol DQ12 DQ30 DQ13 DQ31 Vcc , : Symbol Vin Iout Pt Topr Tst Value -1.0 to 7.0 50 15 0 to + 70 -55 to +125 Units V mA W


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PDF 321606-S54T15TD 16Mx32 16Mx4 DS512
Not Available

Abstract: No abstract text available
Text: ns C A S # hold tim e 'C S H 60 70 ns C A S # se tu p tim e (C B R Refresh) 'C S , 60 UNITS 70 'R A S Random R EA D or W R IT E cycle tim e 60 10,000 70 10,000 ns 'R A S P R A S # pulse w id th (F A S T P A G E M O DE) 60 100,000 70 100,000 , 30 14 13 17 ns 70 10,000 ns 70 125,000 ns ns 0 32 40 ns ns 10 60 32 70 12 ns 32 50 ms ns M icro n T e ch no log y, Inc., rese rve s th e


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1998 - Not Available

Abstract: No abstract text available
Text: DQ26 67 DQ27 68 Vss 69 DQ28 70 DQ29 71 DQ30 72 DQ31 73 Vcc 74 DQ32 75 DQ33 76 DQ34 , -1.0 to 7.0 50 20 0 to + 70 -55 to +125 Units V mA W °C °C Permanent damage may occur if , Max 100 Units pF Input capacitance (WE#, OE#) CI2 - 70 pF Input/Output capacitance (Data) CI/O - 7 pF Input capacitance (CAS#) CI3 - 70 pF - 10 pF - 70 pF Input/Output capacitance (SDA,SCL,SAm) Input capacitance (RAS#) C14


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PDF 72405s-D52G20nC 4Mx72 72405s-D5rG20nC DS314-0
Not Available

Abstract: No abstract text available
Text: 5 C A S # to W E # delay time 'C W D Write command to C A S # lead time 4, 28 5 70 , SYM Access time from R A S # 'R A C MIN -7* MAX MIN MAX UNITS 70 60 ns , pulse width 'R A H 10 ns 10,000 70 10,000 125,000 70 125,000 NOTES 15 , 20 ns 70 ns 'AR 45 55 ns 'RAC 'ASC 0 0 ns •RAD 15 15 , ns 'CAC 15 20 60 10,000 70 10,000 ns 'CAH 10 'CAS 15 ns


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PDF 024-cycle 42-Pin 0DnS73
1998 - PNY Technologies

Abstract: 72 simm function block diagram of FPM FPM RAM
Text: 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol DQ12 DQ30 DQ13 , Pt Topr Tst Value -1.0 to 7.0 50 24 0 to + 70 -55 to +125 Units V mA W °C °C


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PDF 363206-S54m24JL 32Mx36 16Mx4 16MX1 72-pin 16Mx4 16Mx1 4096-cycle PNY Technologies 72 simm function block diagram of FPM FPM RAM
1998 - PNY Technologies

Abstract: 72 simm function DS170 FPM DRAM 30-pin SIMM
Text: 68 69 70 71 72 Symbol DQ12 DQ30 DQ13 DQ31 Vcc DQ32 DQ14 DQ33 DQ15 DQ34 DQ16 NC , Operating temperature Storage temperature NOTE: Symbol Vin Iout Pt Topr Tst Value -1.0 to 7.0 50 6 0 to + 70 -55 to +125 Units V mA W °C °C Permanent damage may occur if absolute


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PDF 361006-S51m06JB 1Mx36 1Mx16 72-pin 1Mx16 DS170-15e PNY Technologies 72 simm function DS170 FPM DRAM 30-pin SIMM
Not Available

Abstract: No abstract text available
Text: . Self-refresh Capability. HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, (tRAC) 50 ns 60 ns 70 ns Max. Column Address Access Time, (tAA) 25 ns 30 ns 35 ns Min. Extended , ) .0°C to + 70 °C Storage Temperature(plastic).-55°C to +150°C Voltage Relative to VSS , MODE Nov. 2001 (Rev. 1.0) DC and Operating Characteristics (1-2) TA = 0°C to 70 °C, VCC , 90 80 70 -5 mA 90 80 70 90 70 60 90 80 70 RAS VCC-0.2V, Self refresh Current


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PDF GLT441L04 GLT441L04 GLT4161L04 1024-cycle 300mil
Not Available

Abstract: No abstract text available
Text: 60 110 18 2 2 MAX 10 10,000 100,000 70 13 8 70 70 130 18 2 2 32 64 50 , 2 73 60 10 8 60 60 104 12 2 2 10,000 125,000 70 10 8 70 70 124 12 2 2 , 20 15 ns 17 2 20 2 20 ns — 5 20 5 25 ns 70 ns 50 , 60 8 10,000 ns 70 10,000 ns 'CLZ (FPM) — 5 5 ns 'RCH 2 2 , ) — 13 15 20 ns 'RCD (FPM) — 'CAH (EDO) 'CAS (FPM) 60 10,000 70 10


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PDF
Not Available

Abstract: No abstract text available
Text: 70 PRD6 35 Blank L NC 22 33 • Refresh Standard/32ms Extended Refresh/128ms , PRD3 67 Vss Vss PRD4 68 NC NC PRD5 69 NC Vss PRD6 70 NC NC , 10,000 100,000 45 5 70 5 20 15 55 0 3 40 15 10 35 70 70 130 20 0 0 32 128 , 0 0 MAX 35 20 70 35 10,000 100,000 50 32 128 50 0 0 20 20 3 15 55 0 15 , t Q G lBbS S MAX 35 10,000 40 5 55 5 15 12 55 0 3 30 12 10 35 70 70 125


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PDF MT8LDT432H 72-pin, 440mW 048-cycle 128ms
1998 - DS555

Abstract: 72 simm function 16m x 36 60ns simm
Text: 34 RAS2* 52 DQ28 70 PD4 17 A5 35 NC 53 DQ10 71 NC 18 , : Symbol Vin Iout Pt Topr Tst Value -1.0 to 7.0 50 16 0 to + 70 -55 to +125 Units V mA W


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PDF 361656-S54m16TL 16Mx36 DS555-05f DS555 72 simm function 16m x 36 60ns simm
Not Available

Abstract: No abstract text available
Text: ) Organization 4M x 64 60 MA644CT10TADG60 70 MA644CT10TADG70 KEY TIMING PARAMETERS Speed 60 70 *RC (ns) 110 130 *RAC (ns) 60 70 *CAC (ns) 15 20 *AA (ns) 30 35 tp c (ns) 40 45 , ) (Max) TTL 88 Configuration 32MB Speed 60 70 CMOS 44 e n fi 12/17/96 MOTOROLA , 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 Pin 64 65 66 67 68 69 70 71 72 73 74 75 76 77 , 0-3 - 0 . 3 to 6.5 50 14.4 0 to + 70 - 55 to + 150 Unit V V V mA W °c °c This device


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PDF 3VFPMU64D/D 168-Lead MA644CT10TADG60 MA644CT10TADG70 MA644CT10TADG60
1998 - Not Available

Abstract: No abstract text available
Text: DQ27 DQ10 DQ28 DQ11 DQ29 Pin # 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 , Operating temperature Storage temperature NOTE: Symbol Vin Iout Pt Topr Tst Value -1.0 to 7.0 50 12 0 to + 70 -55 to +125 Units V mA W °C °C Permanent damage may occur if absolute


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PDF 362006-S51m12JD 2Mx36 1Mx16 DS170-0f
2000 - 322006-S51T04JD

Abstract: 72 simm function 2MX32
Text: 68 69 70 71 72 Symbol DQ12 DQ30 DQ13 DQ31 Vcc DQ32 DQ14 DQ33 DQ15 DQ34 DQ16 NC , -1.0 to 7.0 50 4 0 to + 70 -55 to +125 Units V mA W °C °C Permanent damage may occur if


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PDF 322006-S51T04JD 2Mx32 1Mx16 72-pin 1Mx16 1024-cycle DS211-06­ 72 simm function
1998 - 72 simm function

Abstract: No abstract text available
Text: 70 71 72 Symbol DQ12 DQ30 DQ13 DQ31 Vcc DQ32 DQ14 DQ33 DQ15 DQ34 DQ16 NC PD1 PD2 , Operating temperature Storage temperature NOTE: Symbol Vin Iout Pt Topr Tst Value -1.0 to 7.0 50 3 0 to + 70 -55 to +125 Units V mA W °C °C Permanent damage may occur if absolute


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PDF 361006-S51m03JE 1Mx36 1Mx16 DS469-15f 72 simm function
1998 - 4Mx4 dram simm

Abstract: No abstract text available
Text: DQ27 DQ10 DQ28 DQ11 DQ29 Pin # 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 , : Symbol Vin Iout Pt Topr Tst Value -1.0 to 7.0 50 9 0 to + 70 -55 to +125 Units V mA W


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PDF 364056-S52m09JB 4Mx36 72-pin DS592-05f 4Mx4 dram simm
6582C

Abstract: No abstract text available
Text: (max) 110 ns (min) 40 ns (min) 70 ns 70 ns (max) 25 ns (max) 40 ns (max) 130 ns (min) 45 ns (min , Page Mode Cycle Time ORDERING INFORMATION DESCRIPTION 2M x 64, 60 ns, Gold Tabs, SOJ 2M x 64, 70 ns, Gold Tabs, SOJ 2M x 64, 60 ns, Gold Tabs, TSOP 2M x 64, 70 ns, Gold Tabs, TSOP 2M x 64, 60 ns, Gold Tabs, SOJ 2M x 64, 70 ns, Gold Tabs, SOJ 2M x 64, 60 ns, Gold Tabs, TSOP 2M x 64, 70 ns, Gold Tpbs , CL001M02640HOOJ-60 CL001M02640H00J- 70 CL001M02640H00T-60 CL001M02640H00T- 70 CL001M02640H0AJ-60 CL001M02640H0AJ- 70


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PDF 168-pin MO-161 16158C 6582C
Supplyframe Tracking Pixel