The Datasheet Archive

FLU10XM datasheet (2)

Part Manufacturer Description Type PDF
FLU10XM Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
FLU10XM-E1 Fujitsu FET: P Channel: ID 0.45 A Original PDF

FLU10XM Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - Not Available

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FETs FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , Compression Point Data Sheets 152 1998 Microwave Databook FLU10XM L-Band Medium & High Power , FLU10XM L-Band Medium & High Power GaAs FETs +j50 +j25 +j100 0.5 GHz 1 S11 S22 +90¡ S21 S12 , Sheets 154 1998 Microwave Databook FLU10XM L-Band Medium & High Power GaAs FETs Case Style


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PDF FLU10XM FLU10XM
FLU10XM

Abstract: No abstract text available
Text: ^^^^^^^^ FLU10XM _ L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB , (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base , % retested. Edition 1.2 July 1999 FUJITSU FLU10XM L-Band Medium & High Power GaAs F ET POWER DERATING , œ“ * * * * * * 'ladd 8 10 12 14 16 18 Input Power (dBm) 50 40 30 20 10 TD T3 CO P" Fujfrsu FLU10XM , FLU10XM L-Band Medium & High Power GaAs F ET Case Style "XM" Metal-Ceramic Hermetic Package (0.150


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PDF FLU10XM FLU10XM FCSI0598M200
1998 - Not Available

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 5 Total Power Dissipation (W) 4 3 2 1 , hadd (%) 40 FLU10XM L-Band Medium & High Power GaAs FET +j50 +j25 +j100 0.5 GHz 1 S11 S22 , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic


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PDF FLU10XM FLU10XM FCSI0598M200
2000 - FLU10XM

Abstract: FLU10
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , 1999 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs , ) 2 18 add (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM , -48.5 .886 -164.5 Download S-Parameters, click here 3 FLU10XM L-Band Medium & High


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PDF FLU10XM FLU10XM VGS794 FLU10
1998 - Not Available

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm (Typ , ) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , . Any lot failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & , (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High , -48.5 .886 -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM"


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PDF FLU10XM FLU10XM FCSI0598M200
2004 - Not Available

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , October 2004 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN , ) 40 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 +j100 0.5 GHz 1 +j50 +j25 +90° , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic


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PDF FLU10XM FLU10XM
2004 - FLU10XM

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , . Any lot failure shall be 100% retested. Edition 1.3 October 2004 1 FLU10XM L-Band Medium & , Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic


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PDF FLU10XM FLU10XM V4888
1998 - FLU10XM

Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & High Power , (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 , Download S-Parameters, click here 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM"


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PDF FLU10XM FLU10XM FCSI0598M200
FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM FLL351ME
Text: MK MK IB IB IB IL IL IL IP WG WF WG WF MH MH MG Frequency Band · FLU10XM ·FLU17XM ·FLU35XM


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PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM
2013 - FLL57MK

Abstract: ELM7785-60F FLL357ME fll177 FLL357 fll600iq-2 FLC057WG FLK027WG flc107 fll57
Text: FLU35ZME1 FLU17XM FLU17ZME1 FLU10XM FLU10ZME1 SMT Devices 1 0.1 1.0 Applications: 1.5 LTE/WCDMA , 42.5 42.5 42.5 44.5 44.5 44.5 45.5 48 49.0 *2 Specifications Part Number FLU10XM FLU10ZME1 FLU17XM


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PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL357ME fll177 FLL357 FLC057WG FLK027WG flc107 fll57
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: FLC103WG FLK022WG FLK052WG C053 C103 K022 K052 Case Style "WG" FLU10XM FLU17XM FLU35XM Y U " Case


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FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB


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MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: GaAs L / S Band Medium Power HJ FET (See-A part # for Pb-free) Fujitsu FLU10XM NE651R479A Closest


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PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
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