The Datasheet Archive

FLM0910-2 datasheet (5)

Part Manufacturer Description Type PDF
FLM0910-2 Others High Frequency Device Data Book (Japanese) Scan PDF
FLM0910-2 Others FET Data Book Scan PDF
FLM0910-25F Eudyna Devices X-Band Internally Matched FET Original PDF
FLM0910-25F Fujitsu X, Ku-Band Internally Matched FET Original PDF
FLM0910-25F-E1 Fujitsu Original PDF

FLM0910-2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - ED-4701

Abstract: FLM0910-12F
Text: =26dBm 32 30 Pin=22dBm 28 9 9.5 10 P.A.E. 0 10 Input power[dBm] 2 10.5 11 , ±180° 4 10. 5 0° 9.5GHz 10 10. 5 -10j 2 9.5GHz Scale for |S21| -250j 0.2 , Line Case Style : IB Unit : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4


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PDF FLM0910-12F FLM0910-12F ED-4701
2004 - 95GHz

Abstract: No abstract text available
Text: =33dBm Pin=30dBm Pin=26dBm 32 30 Pin=22dBm 28 9 9.5 10 Input power[dBm] 10.5 11 P1dB 2 FLM0910 , +250j 10 10.5 0 10. 5 9. 5G H z 10 ±180° 4 2 9.5GHz Scale for |S21| Scale for |S , Matched FET Package Out Line Case Style : IB Unit : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4


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PDF FLM0910-12F FLM0910-12F 95GHz
2006 - FLM0910-15F

Abstract: CA 1340 FLM0910
Text: [mA] 40 32 34 36 38 Input Power Level [dBm] 2 34 36 38 Efficiency [% , 2 Scale for |S21| 0° 10 Scale for |S 12| 9.5GHz 10.5 -250j -10j 0.2 9.5GHz , Package Out Line Case Style : IB Unit : mm PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4


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PDF FLM0910-15F FLM0910-15F 1906B, CA 1340 FLM0910
2004 - 2657 FET

Abstract: FLM0910-8F
Text: ) should not exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 32.0 and -4.4 mA , 3rd Order Intermodulation Distortion IM3 f = 10.5 GHz, f = 10 MHz 2 -Tone Test Pout = 28.5dBm , 10.51 GHz 2 -tone test 31 Pout 29 -20 27 -30 IM3 25 -40 23 IM3 (dBc , Frequency (GHz) 22 24 26 28 30 Input Power (dBm) 2 32 34 add (%) 30dBm , 10.7 10.1 2 9.7 9.5 10.7 -j100 0.2 -j50 FREQUENCY (MHZ) 9300 9400 9500 9600


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PDF FLM0910-8F -46dBc FLM0910-8F 2657 FET
1999 - Not Available

Abstract: No abstract text available
Text: ) should not exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 16.0 and -2.2 mA , G1dB Idsr hadd ÆG IM3 Rth ÆTch f = 10.5 GHz, Æf = 10 MHz 2 -Tone Test Pout = 25.5dBm S.C.L. Channel to , =10V f = 10.5 GHz 32 f1 = 10.51 GHz 2 2 -tone test 30 28 26 24 Pout -15 IM3 (dBc) 40 30 hadd (% , hadd 31 9.5 10.0 Frequency (GHz) 10.5 19 21 23 25 27 29 Input Power (dBm) 2 , 9.3GHz 9.5 9.7 9.9 10.1 9.7 0 10 9.7 100 250 180¡ 4 3 2 10.7 1 0¡ SCALE


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PDF FLM0910-4F -46dBc FLM0910-4F 15afety, FCSI0499M200
FLM09I0-2

Abstract: No abstract text available
Text: FLM0910-2 FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b , 1998 Microwave Databook G .C.P.: Gain Com pression Point 476 Data Sheets FLM0910-2 FIIH , H z) Data Sheets 35 477 1998 Microwave Databook FLM0910-2 ciinTCii r UJ11bU , e F L M 0 9 1 0 - 2 is a p o w e r G a A s F E T th a t is in te rn a lly m a tch e d fo r s ta n  , drain-source operating voltage (V q s ) should not exceed 10 volts. 2 . The forw ard and reverse gate currents


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PDF FLM0910-2 FLM09I0-2 FLM09I0-2
FLL101ME

Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLM1011-4C FLK202MH-14 PA flk202xv FLM0910-4C
Text: 800m FLM0910-2 it±ii X~Ku-Band PA GaAs N D 15 DS -5 17.5 1.5 5 -1 -3.5 5 50m 600m 5 600 , =7. 5dBtyp f=9. 5—10. 5GHz 203 Affi^flSßSöiS FLM0910-2 Pout=36dBm, Gp=7. 5dBtyp f=9. 5-10 , 12.5 1. 2 5 -1 -3. 5 5 40m 400» 5 500« FLL10ME «±ii L-Band PA GaAs/SB N D 15 DS -5 3 0.35 0.45 5 - 2 3 lOm 100» 5 160» FLL17MB m±s L-Band PA GaAs/SB N D 15 DS -5 6 0.7 0.9 5 - 2 3 20« 200m 5 300» FLL35ME L-Band PA GaAs/SB N D 15 DS -5 11.5 1.4 1.8 5 - 2 3 40m 400m 5 600Â


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PDF FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLM1011-4C FLK202MH-14 PA flk202xv FLM0910-4C
2003 - 9.5-10.5GHz

Abstract: No abstract text available
Text: dBm 39 dBm 2 35 dBm P1dB FLM0910-25F X, Ku-Band Internally Matched FET S-PARAMETER +90° 25 10 10.5 10 9. H z 5G 10.5 10. 5 ±180° 3 9. H z 5G 10. 5 2 Scale for , . 93 35. 26 25. 29 15. 68 6. 13 - 2 . 58 -9. 87 3 FLM0910-25F X, Ku-Band Internally , ANG M AG ANG M AG ANG 9 9. 1 9. 2 9. 3 9. 4 9. 5 9. 6 9. 7 9. 8 9. 9 10 10. 1 10. 2 10. 3 10. 4 10. 5 10. 6 10. 7 10. 8 10. 9 11 0. 71 0. 65 0


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PDF FLM0910-25F 44dBm FLM0910-25F FCSI0202M200 9.5-10.5GHz
FLM0910-2

Abstract: No abstract text available
Text: FLM0910-2 Internally M a tc h e d P o w e r G aA s F E T s FEATURES · High Output Power: P-idg = , ~ 10.5GHz · Impedance Matched Zin/Zout = 50Q · Hermetically Sealed Fuffrsu DESCRIPTION The FLM0910-2 , Sheets Fuîfrsu f U JIIjU Internally M a tc h e d P o w e r G aA s F E T s FLM0910-2 DRAIN , 477 1998 Microwave Databook FLM0910-2 Internally M a tc h e d P o w e r G aA s F E T s , JII FUÎÎtSU j U Internally M a tc h e d P o w e r G aA s F E T s FLM0910-2 Case Style


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PDF FLM0910-2 FLM0910-2 600mA
Not Available

Abstract: No abstract text available
Text: FLM0910-2 Transistors N-Channel UHF/Microwave MESFET V(BR)DSS (V)15 V(BR)GSS (V)-5 I(D) Max. (A)1.5 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.0 I(DSS) Max. (A)1.5 @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.600u g(fs) Max; (S) Trans. conduct; @V(DS) (V) (Test Condition)5 @I(D) (A) (Test Condition)600m V(GS)off Max. (V)-3.5 @V(DS) (V) (Test Condition)5 Power Gain Min. (dB) @V(DD) (V) (Test Condition) @I(D) (A


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PDF FLM0910-2
Not Available

Abstract: No abstract text available
Text: -4C FLM8596-8C FLM0910-2 FLM0910-4C FLM0910-8C FLM1011- 2 FLM1011-4C FLM1011-8C FLM1213-4C FLM1213-8C FLM1414- 2


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PDF FLM8596-4C FLM8596-8C FLM0910-2 FLM0910-4C FLM0910-8C FLM1011-2 FLM1011-4C FLM1011-8C FLM1213-4C FLM1213-8C
FLM0910

Abstract: No abstract text available
Text: 28 30 32 Input Power Level [dBm] Frequency [GHz] Drain Current [mA] 40 2 34 , ±180° 4 10.5 10 2 Scale for |S21| 0° 10 Scale for |S 12| 9.5GHz 10.5 -250j -10j , ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Edition 1.2 Jul. 2012 4 FLM0910-15F X-Band


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PDF FLM0910-15F 50ohm FLM0910-15F 50ohm 25deg FLM0910
2004 - ED-4701

Abstract: FLM0910-25F
Text: ) 2 10.4 10.6 10.8 40 42 Power Added Efficiency (%) 46 100 FLM0910-25F , - 2 . 58 -9. 87 3 FLM0910-25F X-Band Internally Matched FET Package Out Line CASE STYLE : IK Unit : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM0910-25F , ±180° 3 9. H z 5G 2 Scale for |S21| 10. 5 0° 9.5GHz Scale for |S 12| 10 10 , S 22 [G H z] M AG ANG M AG ANG M AG ANG M AG ANG 9 9. 1 9. 2 9


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PDF FLM0910-25F 44dBm FLM0910-25F ED-4701
2004 - 9.5-10.5GHz

Abstract: No abstract text available
Text: Frequency (GHz) 10.4 10.6 10.8 Pin=26dBm Pin=30dBm Pin=39dBm P1dB Pin=37dBm Pin=34dBm 2 FLM0910-25F , : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM0910-25F X-Band Internally , ±180° 3 2 Scale for |S21| 10 0° 9.5GHz Scale for |S 12| 0.2 -90° 9.5GHz 10 S 11 S 22 S 12 S 21 VDS=10V , IDS=0.6Idss F req [G H z] 9 9. 1 9. 2 9. 3 9. 4 9. 5 9. 6 9. 7 9. 8 9. 9 10 10. 1 10. 2 10. 3 10. 4 10. 5 10. 6 10. 7 10. 8 10. 9 11 S 11 M AG 0. 71 0. 65 0. 59 0. 53 0


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PDF FLM0910-25F 44dBm FLM0910-25F 9.5-10.5GHz
1999 - FLM0910-3F

Abstract: No abstract text available
Text: ) should not exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 13.0 and -1.4 mA , G1dB Idsr add G IM3 Rth Tch f = 10.5 GHz, f = 10 MHz 2 -Tone Test Pout = 24.0dBm S.C.L. Channel to Case , POWER & IM3 vs. INPUT POWER VDS=10V f1 = 10.5 GHz f2 = 10.51 GHz 2 -tone test -15 Pout Total Power , 10.5 19 21 23 25 27 29 Frequency (GHz) Input Power (dBm) 2 add (% , 0.1 9.3GHz 250 9.3GHz 9.5 0 10 9.7 9.5 9.9 180° 4 3 SCALE FOR |S21| 10.7 2 10.5 1


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PDF FLM0910-3F -46dBc FLM0910-3F FCSI0499M200
1999 - Not Available

Abstract: No abstract text available
Text: ) should not exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 13.0 and -1.4 mA , G1dB Idsr hadd ÆG IM3 Rth ÆTch f = 10.5 GHz, Æf = 10 MHz 2 -Tone Test Pout = 24.0dBm S.C.L. Channel to , VDS=10V f1 = 10.5 GHz f2 = 10.51 GHz 2 -tone test Pout -15 IM3 (dBc) -25 -35 -45 -55 21 19 12 14 , (dBm) hadd Pout 40 30 20 10 hadd (%) 2 FLM0910-3F X, Ku-Band Internally Matched FET +j50 , | 10.7 2 10.5 1 9.5 9.7 9.9 10.1 9.9 0¡ 9.7 9.3GHz 9.5 9.3GHz 10.7 10.7 9.7 10.3


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PDF FLM0910-3F -46dBc FLM0910-3F 15afety, FCSI0499M200
1999 - 2657 FET

Abstract: No abstract text available
Text: ) should not exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 32.0 and -4.4 mA , G1dB Idsr hadd ÆG IM3 Rth ÆTch f = 10.5 GHz, Æf = 10 MHz 2 -Tone Test Pout = 28.5dBm S.C.L. Channel to , IM3 vs. INPUT POWER VDS=10V f1 = 10.5 GHz f2 = 10.51 GHz 2 -tone test Pout -20 -30 -40 -50 16 18 , ) 2 FLM0910-8F X, Ku-Band Internally Matched FET +j50 +j100 +j25 10.3 9.5 9.7 9.9 9.9 9.7 9.5 , +j250 10.1 10.5 10.3 10.1 9.9 9.7 9.5 9.3GHz 0.1 2 9.3GHz 9.3GHz 0 10 20 180¡ 4


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PDF FLM0910-8F -46dBc FLM0910-8F 15afety, FCSI0499M200 2657 FET
1999 - FLM0910-8F

Abstract: 2657 FET
Text: ) should not exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 32.0 and -4.4 mA , G 3rd Order Intermodulation Distortion IM3 f = 10.5 GHz, f = 10 MHz 2 -Tone Test Pout = , GHz 2 -tone test Pout 29 -20 27 -30 IM3 25 -40 23 IM3 (dBc) POWER , Input Power (dBm) Frequency (GHz) 2 32 34 add (%) VDS=10V P1dB Output Power (dBm , 10.7 10.1 2 9.7 9.5 10.7 -j100 0.2 -j50 FREQUENCY (MHZ) 9300 9400 9500 9600


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PDF FLM0910-8F -46dBc FLM0910-8F FCSI0499M200 2657 FET
2004 - FLM0910-8F

Abstract: 2657 FET
Text: exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 32.0 and -4.4 mA , 3rd Order Intermodulation Distortion IM3 f = 10.5 GHz, f = 10 MHz 2 -Tone Test Pout = 28.5dBm , 10.51 GHz 2 -tone test 31 Pout 29 -20 27 -30 IM3 25 -40 23 IM3 (dBc , Frequency (GHz) 22 24 26 28 30 Input Power (dBm) 2 32 34 add (%) 30dBm , 10.7 10.1 2 9.7 9.5 10.7 -j100 0.2 -j50 FREQUENCY (MHZ) 9300 9400 9500 9600


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PDF FLM0910-8F -46dBc FLM0910-8F 2657 FET
2004 - Not Available

Abstract: No abstract text available
Text: ) should not exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 13.0 and -1.4 mA , G1dB Idsr add G IM3 Rth Tch f = 10.5 GHz, f = 10 MHz 2 -Tone Test Pout = 24.0dBm S.C.L. Channel to Case , POWER & IM3 vs. INPUT POWER VDS=10V f1 = 10.5 GHz f2 = 10.51 GHz 2 -tone test -15 Pout Total Power , 10.5 19 21 23 25 27 29 Frequency (GHz) Input Power (dBm) 2 add (% , 0.1 9.3GHz 250 9.3GHz 9.5 0 10 9.7 9.5 9.9 180° 4 3 SCALE FOR |S21| 10.7 2 10.5 1


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PDF FLM0910-3F -46dBc FLM0910-3F
FLM0910-3F

Abstract: 3078 FET
Text: . The drain-source operating voltage (Vpg) should not exceed 10 volts. 2 . The forward and reverse gate , ±0.6 dB 3rd Order Intermodulation Distortion IM3 f = 10.5 GHz, Af=10MHz 2 -Tone Test Pout = 24.0dBm S.C.L , GHz 2 -tone test


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PDF FLM0910-3F -46dBc FLM0910-3F FCSI0499M200 3078 FET
FLM0910-4F

Abstract: No abstract text available
Text: operating voltage (Vpg) should not exceed 10 volts. 2 . The forward and reverse gate currents should not , Distortion IM3 f = 10.5 GHz, Af=10MHz 2 -Tone Test Pout = 25.5dBm S.C.L. -44 -46 - dBc Thermal Resistance Rth , 28 26 24 22 20 VDS=10V fi =10.5 GHz f2 = 10.51 GHz 2 -tone test Pout


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PDF FLM0910-4F -46dBc FLM0910-4F FCSI0499M200
Not Available

Abstract: No abstract text available
Text: operating voltage (V q s ) should not exceed 10 volts. 2 . The forw ard and reverse gate currents should not , (MHZ) MAG S21 9300 .53 -52 2.32 138 .07 100 .42 2 9500 .52 , ) 5 . 2 M a x. (0 . 2 0 5 ) 1 : G a te 2 : S o u rc e (Flange) 3: Drain Unit: m m (Inches) Data


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PDF FLM0910-8C FLM0910-8C
FLM0910-4C

Abstract: FLM0910
Text: voltage (V d s ) should not exceed 10 volts. 2 . The forw ard and reverse gate currents should not exceed


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PDF FLM0910-4C 36dBm FLM0910-4C 1100mA FLM0910
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: Part Number 1011-2 FLM1011- 2 FLM1011-4C/4D FLM1011-6F FLM1213-4C FLM1213-6F FLM1213-8C FLM1414- 2 FLM1414-4C FLM1414-6F FLM1414-8C FLM8596-4C FLM0910-2 FLM0910-4C 1011-4C/4D 1011-6F 1213-4C 1213-6F , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2 ) When mounting , (0.9 Ib-in) Table 1-1 2 ) Solder Mounting - The recommended soldering procedure is as follows: a. The , Lot Number : 4 to 9 digits : 2 Letters (Year code and Month code) 1st Letter : Year code 2nd Letter


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