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FLL55MK

Abstract: FLL55 TH 2267
Text: FLL55MK L-Band Medium & High Power GaAs FETs FEATURES · · · · · High Output Power: P-idg = , Hermetically Sealed Package F |.fjV ç -. J DESCRIPTION The FLL55MK is a Power GaAs FET that is , FUJITSU FLL55MK L-Band Medium & High Power GaAs FETs DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE , Microwave Databook FLL55MK L-Band Medium & High Power GaAs FETs . . I 1jU S-PARAMETERS V , - - - 18.1 1998 Microwave Databook 178 Data Sheets Fufrrsu FLL55MK L-Band


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PDF FLL55MK FLL55MK FLL55 TH 2267
FLL55

Abstract: FLL55MK fujitsu l-band power fets fujitsu gaas fet L-band fujitsu databook
Text:  FLL55MK L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB = 36.0dBm , • Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically , Point 1998 Microwave Databook 176 Data Sheets FI rîrrci I FLL55MK rUJll jU L-Band Medium & High , FLL55MK L-Band Medium & High Power GaAs FETs FUJITSU +j50 +j10 +j250 J250 180' S-PARAMETERS , Databook 178 Data Sheets FUJITSU FLL55MK L-Band Medium & High Power GaAs FETs Case Style "MK"


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PDF FLL55MK FLL55MK FLL55 fujitsu l-band power fets fujitsu gaas fet L-band fujitsu databook
FLL55

Abstract: 4030p
Text: L-Band Medium & High Power GaAs / /:7 s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol Vd S VGS pt FLL55MK Condition Rating 15 -5 Unit V V Tc = 25°C 21.4 -65 to+175 175 w °c °c Tstg Tch Fujitsu recommends the following conditions for the reliable operation of , L-Bcuid Medium & High Power GaAs FETs FLL55MK S-PARAMETERS II C O Q > 10V, IDS = 800mA S12 ANG


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PDF FLL55MK FLL55 4030p
FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM FLL351ME
Text: FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL200IB-3* FLL300IL-1 FLL300IL


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PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM
FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: a) 3.5 Watt f = 2.3 GHz FSX51WF FLL171ME FLL55MK P1dB = 35.5 dBm b) 9 Watt f = 2.3 , 8) FLL55MK APPLICATION f=2.3 GHz MATCHING CIRCUIT £ r= 9 .7 t=0.65 Units: mm Fufrsu 1997


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PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: "MH" FLL55MK FLL105MK FLL120MK FLL55 FLL105 FLL120 Case Style "MK" FLC091WF FLC161WF FLK012WF


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FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB


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