The Datasheet Archive

FLL200IB-2 datasheet (3)

Part Manufacturer Description Type PDF
FLL200IB-2 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
FLL200IB-2 Others FET Data Book Scan PDF
FLL200IB-2-E1 Fujitsu FET: P Channel: ID 12 A Original PDF

FLL200IB-2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - FLL200IB-3

Abstract: FLL200 059 906 051 FLL200IB-1 FLL200IB-2
Text: FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , -1, FLL200IB-2 , FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band , Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Test Conditions IDSS gm VDS = 5V , Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium &


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FLL200 059 906 051 FLL200IB-1 FLL200IB-2
Not Available

Abstract: No abstract text available
Text: FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FETs FEATURES · High Output , FLL200IB-1, FLL200IB-2 , FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power , Channel Tem perature Rise CASE STYLE: IB FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Idsr ^add , -1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FETs 0 50 100 150 200 Case , p. .t f p q . i +j50 FLL200IB-2 L-Band Medium & High Power GaAs FETs -o- s -0 -21 s 12


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3
2004 - 1200 - 1400 MHz L-Band Applications

Abstract: No abstract text available
Text: FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · High , 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2 , added Efficiency Thermal Resistance Channel Temperature Rise CASE STYLE: IB FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Symbol IDSS gm Vp VGSO P1dB Test Conditions VDS = 5V, VGS = 0V , Compression Point Edition 1.2 October 2004 1 FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium &


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 1200 - 1400 MHz L-Band Applications
1200 - 1400 MHz, L-Band Applications

Abstract: fujitsu l-band power fets FLL200 FLL200IB-1 FLL200IB-2 FLL200IB-3 et 1109
Text: FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • High , FLL200IB-1, FLL200IB-2 , FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power , 10V ids = o.6 loss (Typ.) f=1,5GHz 41.5 42.5 - dBm FLL200IB-2 f=2.3GHz FLL200IB-3 f=2.6GHz Power Gain at 1dB G.C.P. FLL200IB-1 GidB f=1,5GHz 12.0 13.0 - dB FLL200IB-2 f=2.3GHz 10.0 11.0 - dB , .: Gain Compression Point FUJITSU FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 1200 - 1400 MHz, L-Band Applications fujitsu l-band power fets FLL200 FLL200IB-1 FLL200IB-2 et 1109
FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: (FLL200IB-1) f = 2.3 GHz ( FLL200IB-2 ) f = 2.6 GHz (FLL200IB-3) FSX51WF FSX52WF FLL351ME FLL200IB-X P1dB = 42.0 dBm ^ o d) 25 Watt f = 0.9 GHz (FLL300IL-1) f = 1.8 GHz (FLL300IL- 2 ) f = 2.6 GHz , = 1.5 GHz (FLL200IB-1) f = 2.3 GHz ( FLL200IB-2 ) f = 2.6 GHz (FLL200IB-3) FSX51WF FLL101ME , 9.7 t = 0.65 mm Units: mm 12) FLL200IB-2 APPLICATION f=2.3GHz MATCHING CIRCUIT CD 15 h -2.0 , FHX06LG o- -o Fujfrsu Application Notes 347 1997 Microwave Databook 2 ) L-BAND LINE-UPS


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PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
1998 - FLL200IB-1

Abstract: FLL200 FLL200IB-2 FLL200IB-3
Text: FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , -1, FLL200IB-2 , FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band , Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Test Conditions IDSS gm VDS = 5V , Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium &


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 FLL200IB-1 FLL200 FLL200IB-2
1998 - Not Available

Abstract: No abstract text available
Text: FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • â , FLL200IB-1, FLL200IB-2 , FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high , Conditions FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current VGSO , 1999 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band , 123.4 121.2 116.4 32.7 FLL200IB-2 L-Band Medium & High Power GaAs FET S11 S22 4GHz +j25


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200
2004 - FLL200IB-1

Abstract: FLL200IB-2 FLL200IB-3
Text: FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , -1, FLL200IB-2 , FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band , G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current , 2004 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band , 140.7 136.5 131.6 127.5 123.4 121.2 116.4 32.7 FLL200IB-2 L-Band Medium & High Power GaAs


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 RATING4888 FLL200IB-1 FLL200IB-2
Not Available

Abstract: No abstract text available
Text: Vd S vgs pt FLL200IB-L FLL200IB-2 , FLL200IB-3 Condition Rating 15 -5 Tc = 25°C Unit V V , Transconductance Pinch-off Voltage Gate Source Breakdown Voltage FLL200IB-1 Output Power at 1dB G.C.P. FLL200IB-2 FLL200IB-3 FLL200IB-1 Power Gain at 1dB G.C.P. FLL200IB-2 FLL200IB-3 Drain Current Power added Efficiency , 1997 Microwave Databook L-Band Medium & High Power GaAs b E l s FLL200IB-2 S-PARAMETERS VDs = , . 2 . The forward and reverse gate currents should not exceed 13 and -11.6 mA respectively with gate


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PDF FLL200IB-L FLL200IB-2 FLL200IB-3
1998 - FLL200IB-1

Abstract: FLL200IB-2 FLL200IB-3
Text: FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , -1, FLL200IB-2 , FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band , Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Power added Efficiency Thermal Resistance , G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2 , FLL200IB-3 L-Band Medium & High Power


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 FLL200IB-1 FLL200IB-2
FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM FLL351ME
Text: FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2 * FLL200IB-3* FLL300IL-1 FLL300IL- 2 * FLL300IL-3* ·FLL300IP- 2 FLC053W G FLC091W F FLC103W G FLC161W F FL.C253MH-6* FLC253MH-8* FLC 31 1M G -4


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PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM
2013 - FLL57MK

Abstract: ELM7785-60F FLL357ME fll177 FLL357 fll600iq-2 FLC057WG FLK027WG flc107 fll57
Text: Large Signal L-Band, S-Band High Output GaAs FET Lineup 100 High Power FLL810IQ-4C FLL600IQ- 2 FLL400IP- 2 FLL300IL-1 FLL200IB-1 FLL300IL- 2 FLL200IB-2 FLL300IL-3 FLL200IB-3 High Frequency Output , 42.5 42.5 42.5 44.5 44.5 44.5 45.5 48 49.0 * 2 Specifications Part Number FLU10XM FLU10ZME1 FLU17XM FLU17ZME1 FLU35XM FLU35ZME1 FLL107ME FLL177ME FLL357ME FLL57MK FLL120MK FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL300IL-1 FLL300IL- 2 FLL300IL-3 FLL400IP- 2 FLL600IQ- 2 FLL810IQ-4C Series FLU FLU FLU FLU FLU FLU FLL FLL


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PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL357ME fll177 FLL357 FLC057WG FLK027WG flc107 fll57
FLL101ME

Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLM1011-4C FLK202MH-14 PA flk202xv FLM0910-4C
Text: -1 -3. 5 5 480m 4 5 4.8 FLL200IB-2 s±m L-Band PA GaAs/SB n D 15 DS -5 83.3 8typ 12 5 -1 -3. 5 , GSDS FLL2001B-1 Pout=42. 5dBm, Gp=lldBtyp f=l. 5GHz, ldBfiJi^EIS^. 146 GSDS FLL200IB-2 , 12.5 1. 2 5 -1 -3. 5 5 40m 400» 5 500« FLL10ME «±ii L-Band PA GaAs/SB N D 15 DS -5 3 0.35 0.45 5 - 2 3 lOm 100» 5 160» FLL17MB m±s L-Band PA GaAs/SB N D 15 DS -5 6 0.7 0.9 5 - 2 3 20« 200m 5 300» FLL35ME L-Band PA GaAs/SB N D 15 DS -5 11.5 1.4 1.8 5 - 2 3 40m 400m 5 600Â


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PDF FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLM1011-4C FLK202MH-14 PA flk202xv FLM0910-4C
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2 ) When mounting , (0.9 Ib-in) Table 1-1 2 ) Solder Mounting - The recommended soldering procedure is as follows: a. The , Lot Number : 4 to 9 digits : 2 Letters (Year code and Month code) 1st Letter : Year code 2nd Letter , Part Number 1011-2 FLM1011- 2 FLM1011-4C/4D FLM1011-6F FLM1213-4C FLM1213-6F FLM1213-8C FLM1414- 2 FLM1414-4C FLM1414-6F FLM1414-8C FLM8596-4C FLM0910- 2 FLM0910-4C 1011-4C/4D 1011-6F 1213-4C 1213-6F


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FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: -1 FLL200IB-2 FLL200IB-3 FLL300IL-1 FLL300IL- 2 FLL300IL-3 FLL300IP- 2 FLC091WF FLC161WF FLC311MG-4 FLC053WG , receive Binocular microscope with strap probe transferred chips illuminator 2 ) HANDLING PRECAUTIONS , 1.5 mm x 0.2 mm deep; 2 ) fo r large chips, a 50 cell chip carrier tray is used with cell dimensions of , used. 2 ) 3) 4) Chips should be kept at room temperature except during die-attach. Place package or , °C Time: less than 15 seconds Au-Sn Preform Volume: per Figure II- 2 5) Place the chip on a warm plate for


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CD 294

Abstract: FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
Text: exceed 10 volts. 2 . The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively , 10 8 CO Q_ C/3 6 CO b 0 4 o CL 15 2 H—1 O A \ \ s \ 0 50 100 150 200 , =OV I 0.5V ■-1.0V — -1,5V Ì2.0V 2 4 6 8 10 Drain-Source Voltage (V) OUTPUT POWER & IM3 vs. INPUT POWER vds=10v fl = 6.0 GHz f2 = 6.01GHz 2 -tone Test 10 12 14 16 18 Input Power (S.C.L.) (dBm , (0.098) Y H (0.024) 3.5±0.2 (0.335) [ 0.1 ±0.05 (0.004) 6.1±0.1 (0.240) 1. Gate 2


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PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
TP4303F-V1.2

Abstract: TP4303E-V1.2 XF20259.2 RH1034-1.2 SUN4004-4.2 BGR25-1600.2 PSB50601HL-V1.2 SLB9655TT1.2 B080EAN02.2 FHD60C4LV0.2
Text: 1 2 4 3 PRODUCT NUMBER 73937-XYYY 73937-XYYYLF 17.00 REF 118.00 REF 3.45 REF , /29/00 1 2 revision T T T 1 2 3 METRAL SIGNAL HEADER 10 MOD, 5 ROW PRESS-FIT METRAL product family MM size scale 2 :1 A dwg no 73937 code 213 sheet 1 of 5 T sheet title 2 engr index www.fciconnect.com COPY projection , 2006-04-18 PDM: Rev:T STATUS:Released Printed: Sep 16, 2009 . 1 2 4 3 18.00 MIN


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PDF 73937-XYYY 73937-XYYYLF V06-0544 DG09-0256 V03-0029 V03-1284 V04-0no GS-22-008. TP4303F-V1.2 TP4303E-V1.2 XF20259.2 RH1034-1.2 SUN4004-4.2 BGR25-1600.2 PSB50601HL-V1.2 SLB9655TT1.2 B080EAN02.2 FHD60C4LV0.2
RH1034-1.2

Abstract: TP4303F-V1.2 PEF55208EV1.2 TP4303E-V1.2 PEB4266TV1.2 PEB4264T-V1.2 PEF2091NV5.2 hnc-0.2 TPS535G2.2 ThinkEngine_2
Text: d isto rtio n factor. Functions • 4 a u d io sw itch circu its o f 2 inputs and • • 2 au d io sw itch circu its o f 3 in p u ts and 2 au d io am p lify in g c irc u its o f 2dB . • CTL E [T OUT rrLL AVIN fT" 2 a u d io am p lify in g c irc u its o f 12dB . output. output. ~ "| CTLF Ü "7 1A !N T V _LZJ 2 (R) C +1 (R) “ 771 G N D (R) _!£] (R) T71TUIN _ül (R) TTI A O V UT i_J 1(R) "Til A O V UT -IlJ 2 (0) CT LD Q ÏÏ c+ in rrr 2 (R


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PDF LA7155M VCHI-18 VCLOW-18 RH1034-1.2 TP4303F-V1.2 PEF55208EV1.2 TP4303E-V1.2 PEB4266TV1.2 PEB4264T-V1.2 PEF2091NV5.2 hnc-0.2 TPS535G2.2 ThinkEngine_2
7+segment+display+d5611+a/b

Abstract: RH1034-1.2
Text: 1 _ L N O TE S 1. CO LORED S T R IP E SEE CHART 2 . PRO DUCT TO RUN L E N G T H OF R IB A S SHOWN F O R C O L O R OF S T R IP E S P E C I F IC A T I O N : P S - 7 7 2 0 - 0 0 1 SPEC S M E S -7 7 2 0 -0 0 0 2 F O R A D D T IO N A L (IN S U L . D IA IN F O R M A T IO N . .0 6 0 MAX) 3. SEE A P P L IC A T IO N 4 . W IRE S P E C I F IC A T I O N S : SLO T 26 S IZ E SEE S M E S -7 7 2 0 -0 0 0 2 A F O R U S E WITH: TIN N E D T IN N E D , AND S T R A N D E D T O P C O A T AWG S


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RH1034-1.2

Abstract: COGEMAsrl0565.2
Text: MâïSUMÎ 2 -Input 1-Output 3-C ircuit Video Switch MM1232 Monolithic IC MM1232 This is a video switch for video/audio signal switching, with 2 -input and 1-output circuits built in. One ot the three circuits has a clamp function. 1. 3 circuits built in, 2 -input and 1-output 2 . Clamp function 3. Current , .6 -1 3.0V 10MHz 70dB (at 4.43MHz) SOP-16B (MM1232XF) DIP-16B (MM1232XD) 1. TV 2 . VCR 3. Other , L IN 2A LN3A ENIB H IN2B IN3B MâïSUMÎ 2 -Input 1-Output 3-C ircuit Video Switch


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PDF MM1232 10MHz 43MHz) OP-16B MM1232XF) DIP-16B MM1232XD) 43MHz RH1034-1.2 COGEMAsrl0565.2
2006 - RH1034-1.2

Abstract: TP4303F-V1.2 IFL04-100RN508X203.2 ThinkEngine_2
Text: Symbol Conditions - . 2 + , B 5 > . Values 25 +> Units = = * H9= H9= # # , B 5 , B 5 5 2 5 2 $5 I25 $5 I25 J@> 4 ' . $./ , B 5 - . 0 > DE , # >5 >5 ? ? ?>5 ?>5 N N N>5 N>5 ! ! 2 2 22 22 2 2 2 @ 2 @ 2 " 2 " 25 25 2 2 2 ? 2 ? 2N 2N " " N 6: L* 5 5 2 2 5 5 2 2 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 < - . / 0 K6, # ?> ?> ?>N ?>N N>@ N>@ N>! N>! !>" !>" 2 2 22> 2 22> 2 2 > 2 > 2 @>@ 2 @>@ 2 ">" 2 ">" 25> 25> 2 >? 2 >? 2 ?>N 2


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PDF 5SMCJ150CA 5SMCJ150CA RH1034-1.2 TP4303F-V1.2 IFL04-100RN508X203.2 ThinkEngine_2
1999 - RH1034-1.2

Abstract: BA7606 BA7606F XF20259.2 TP4303F-V1.2 ZS2306KE-1.2 L6278-1.2
Text: ·Features / 1-output switches. 1) Three 2 -input 5) Excellent frequency characteristics (10MHz, ­ 1dB Typ.). 6) Wide dynamic range (2.6Vp-p Typ.). 7) Fast switching speed (50ns Typ.). 2 ) 5V power , 16 IN1a Sa CTLa 2 OUTa 14 IN2b 3 Sb GND 4 OUTb 5 13 VCC 12 CTLb OUTc 6 11 , R6 25k R2 200 CTL I2 0.6mA Q1 Q6 Q3 Q2 I1 0.25mA 2 R3 400 Q5 Q4 , Conditions - - Note 1 Note 2 f = 1MHz, VIN = 1VP-P f = 4.43MHz, VIN = 1VP-P 10MHz / 1MHz, VIN = 1VP


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PDF BA7606 BA7606F BA7606F 10MHz, 10MHz) 20mVP-P. BA7606 RH1034-1.2 XF20259.2 TP4303F-V1.2 ZS2306KE-1.2 L6278-1.2
RH1034-1.2

Abstract: No abstract text available
Text: . ELCO M 2 1 0 9 7 / 2 -01 00-5007-0 1 2 -16 3 -1 1 0 M 21097 / 4 -11 00-7024-023-234-110 M 21097 / 5 -01 00-7023-017-000-110 -03 00-5007-0 1 2 -23 4 -1 1 0 -12 00-7024-023-235-110 , -09 00-7023-041-000-110 -20 00-7024-029-235-110 -10 00-7023-041-000-111 M 2 1 0 9 7 / 2 -25 0 0 -5 0 0 7 -0 2 2 -1 6 3 -1 1 0 -21 00-7024-029-236-110 -27 0 0 -5 0 0 7 -0 2 2 - 2 3 4 -1 1 0 -22 00-7024-029-234-111 M 28731 / 9 -0 1 0 9 5 3 -8 0 1 6 -0 2 0 -1 9 9


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2008 - RH1034-1.2

Abstract: UL E42024
Text: Solderless splices CLOSED-END øD ød E F L E L Style 2 F Style 1 Style 2 , ) (1.0 to 2.5) (2.0 to 5.5) (4.0 to 9.0) CE1(CE-100) CE2(CE-230) CE5(CE-550) CE8(CE-800) 2 -SDW 0.5-SD 1-SD 2 -SD 5.5-SD 8-SD 2 1 20.8 (.819) 9.5 (.374) 21.0 (.827) 9.5 (.374) 27.0(1.063) 12.0 (.472 , o o YA- 2 YA-4 o o o o o o o o o o o o o o o o o Insulation Material BCT-0514 o o o o o o o , with the JIS mark conform to JIS C2807. 2 ) "Applicable Wires" indicates the total cross-sectional area


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PDF E42024 LR20812 YS-2622 YS-2216 YS-1614 YS-12 CE-800) RH1034-1.2 UL E42024
1998 - RH1034-1.2

Abstract: c2807
Text: Solderless splices CLOSED-END ød ød øD E L Style 2 F E L Style 1 F File No.: E42024 LR20812 686022 Dimensions mm (in.) Tool No. YS-2622 YS-2216 YS-1614 YS-1210 YS-8S YA-1 YA- 2 YA-4 o o o , ) (4.0 to 9.0) CE1(CE-100) CE2(CE-230) CE5(CE-550) CE8(CE-800) 2 -SDW 0.5-SD 1-SD 2 -SD 5.5-SD 8-SD 2 1 , ) 12.0 (.472) Note:1) Products with the JIS mark conform to JIS C2807. 2 ) "Applicable Wires" indicates , ) Part numbers 1-SD and 2 -SD are CSA certified with a rating of 300V; all other models are certified with


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PDF E42024 LR20812 YS-2622 YS-2216 YS-1614 YS-1210 CE-800) RH1034-1.2 c2807
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