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FLL200IB-1 datasheet (3)

Part Manufacturer Description Type PDF
FLL200IB-1 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
FLL200IB-1 Others FET Data Book Scan PDF
FLL200IB-1-E1 Fujitsu FET: P Channel: ID 12 A Original PDF

FLL200IB-1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - FLL200IB-3

Abstract: FLL200 059 906 051 FLL200IB-1 FLL200IB-2
Text: FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz ( FLL200IB-1 ) High PAE: add = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1 , Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Test Conditions IDSS gm VDS = 5V


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FLL200 059 906 051 FLL200IB-1 FLL200IB-2
Not Available

Abstract: No abstract text available
Text: FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FETs FEATURES · High Output Power: P-idg = 42.5dBm (Typ.) · High Gain: G 1dB = 13.0dB (Typ.)@1.8 GHz ( FLL200IB-1 ) · High PAE: r iadd , FLL200IB-1 , FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power , Saturated Drain Current T ransconductance Pinch-off Voltage Gate Source Breakdown Voltage FLL200IB-1 Output , Channel Tem perature Rise CASE STYLE: IB FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Idsr ^add


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3
2004 - 1200 - 1400 MHz L-Band Applications

Abstract: No abstract text available
Text: FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz ( FLL200IB-1 ) High PAE: add = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1 , FLL200IB , added Efficiency Thermal Resistance Channel Temperature Rise CASE STYLE: IB FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Symbol IDSS gm Vp VGSO P1dB Test Conditions VDS = 5V, VGS = 0V


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 1200 - 1400 MHz L-Band Applications
1200 - 1400 MHz, L-Band Applications

Abstract: fujitsu l-band power fets FLL200 FLL200IB-1 FLL200IB-2 FLL200IB-3 et 1109
Text:  FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB = 42.5dBm (Typ.) • High Gain: G1dB = 13.0dB (Typ.)@ 1 8GHz ( FLL200IB-1 ) • High , FLL200IB-1 , FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power , Source Breakdown Voltage VgSO |QS = -480nA -5 - - V Output Power at 1dB G.C.P. FLL200IB-1 PidB VDS = , =2.6GHz Power Gain at 1dB G.C.P. FLL200IB-1 GidB f= 1 ,5GHz 12.0 13.0 - dB FLL200IB-2 f=2.3GHz 10.0 11.0 - dB


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 1200 - 1400 MHz, L-Band Applications fujitsu l-band power fets FLL200 FLL200IB-1 FLL200IB-2 et 1109
2004 - FLL200IB-1

Abstract: FLL200IB-2 FLL200IB-3
Text: FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz ( FLL200IB-1 ) High PAE: add = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1 , G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current , 2004 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 RATING4888 FLL200IB-1 FLL200IB-2
1998 - FLL200IB-1

Abstract: FLL200 FLL200IB-2 FLL200IB-3
Text: FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz ( FLL200IB-1 ) High PAE: add = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1 , Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Test Conditions IDSS gm VDS = 5V


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 FLL200IB-1 FLL200 FLL200IB-2
1998 - Not Available

Abstract: No abstract text available
Text: FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz ( FLL200IB-1 , FLL200IB-1 , FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high , Conditions FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current VGSO , 1999 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200
FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: ( FLL200IB-1 ) f = 2.3 GHz (FLL200IB-2) f = 2.6 GHz (FLL200IB-3) FSX51WF FSX52WF FLL351ME , = 1.5 GHz ( FLL200IB-1 ) f = 2.3 GHz (FLL200IB-2) f = 2.6 GHz (FLL200IB-3) FSX51WF FLL101ME , Databook APPLICATION NOTES 11) FLL200IB-1 APPLICATION f=1.5GHz MATCHING CIRCUIT in CO INPUT £r = , Application Notes APPLICAI ION NOTES 1 ) LOW NOISE RECEIVER FRONT ENDS UNE-UPS a) f=3.7-4.2 GHz NF , FHX04LG FHX05LG FHX06LG o c )f= 1 1.7-12.2 GHz NF =0.85 dB Ga= 32dB FHX14LG FHX05LG


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PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
Not Available

Abstract: No abstract text available
Text: Transconductance Pinch-off Voltage Gate Source Breakdown Voltage FLL200IB-1 Output Power at 1dB G.C.P. FLL200IB-2 FLL200IB-3 FLL200IB-1 Power Gain at 1dB G.C.P. FLL200IB-2 FLL200IB-3 Drain Current Power added Efficiency , Databook 1 08 Data Sheets L-Band Medium & High Power GaAs FETs +¡50 >11 +90" FLL200IB-1 321 , reliable operation of GaAs FETs: 1 . The drain-source operating voltage (V q q ) should not exceed 10 volts , Case 10V x ldsr x Rth 10.0 10.0 11.0 11.0 4.8 34 Symbol IDSS 9m Test Conditions Limit Min. -1.0 -5 f= 1


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PDF FLL200IB-L FLL200IB-2 FLL200IB-3
1998 - FLL200IB-1

Abstract: FLL200IB-2 FLL200IB-3
Text: FLL200IB-1 , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz ( FLL200IB-1 ) High PAE: hadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1 , Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Power added Efficiency Thermal Resistance


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PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 FLL200IB-1 FLL200IB-2
FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM FLL351ME
Text: FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1 * FLL200IB-2* FLL200IB-3* FLL300IL- 1 FLL300IL , 1 (GHz) 2.0 2.0 2.0 2.3 2.3 2.3 2.3 2.3 1.5 2.3 2.6 0.9 1.8 2.6 1.96 8 6 8 6 6.4 8.5 4.2 Vos (V , 7.5 25 15 7.5 6.2 3.3 1.6 1.6 1.6 1.1 1.1 1 , 1 1.2 27 25 16 15 8 8 8 Package Type XM XM XM ME ME ME


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PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM
2013 - FLL57MK

Abstract: ELM7785-60F FLL357ME fll177 FLL357 fll600iq-2 FLC057WG FLK027WG flc107 fll57
Text: -2 FLL400IP-2 FLL300IL- 1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 High Frequency Output , FLU17ZME1 FLU35XM FLU35ZME1 FLL107ME FLL177ME FLL357ME FLL57MK FLL120MK FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL300IL- 1 FLL300IL-2 FLL300IL-3 FLL400IP-2 FLL600IQ-2 FLL810IQ-4C Series FLU FLU FLU FLU FLU FLU FLL FLL , FLU35ZME1 FLU17XM FLU17ZME1 FLU10XM FLU10ZME1 SMT Devices 1 0.1 1.0 Applications: 1.5 LTE/WCDMA , Typ. (°C/W) 25 15 15 12 7.5 5 25 15 7.5 6.2 3.3 1.6 1.6 1.6 1 1 1 1 0.8 0.8 Outline/ Package Code


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PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL357ME fll177 FLL357 FLC057WG FLK027WG flc107 fll57
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: must pay careful attention to the following precautions when taking FETs out of their packaging. 1 , soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1 ) Screw , 1213-8C 1414-2 1414-4C 1414-6F 1414-8C 8596-4C 0910-2 0910-4C Case Style "IB" 1 FLL200IB- 2 , - 8C FLM0910- 8C FLL200- 1 FLL200-2 FLL200-3 1011-8C/8D 1011-12F 1213-12F 1414-12F 3742-4C/4E 3742-8C , Marking of Part Number JL: X 3 ¡7 4 121 > H - | i |2| d |ä 1 Ì JAPAN xrp : Lot Number


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PDF
FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB-1 , APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 , are used: 1 ) for small chips, a 100 cell chip carrier tray is used with cell dimensions of 0.5 mm x , (F) Clamp Figure II - 1 . Shipping Container Layers and Order of Assembly cO FUjlTSU , 1 ) The die-attach station must have accurate temperature control, and an inert forming gas should be


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FLL101ME

Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLM1011-4C FLK202MH-14 PA flk202xv FLM0910-4C
Text: - 134 - f t 1 » i * A 3E fé Itt te (Ta=25T!) ® « tt £ m m « £ V , Ku-Band PA GaAs N D 15 DS -5 1.5 0.6 5 - 1 -3.5 5 20» 200» 5 250» FLK202MH-14 Ku-Band PA GaAs N D 15 DS -5 12.5 1.2 5 - 1 -3. 5 5 40m 400« 5 500« FLK202XV Ku-Band PA GaAs N D 15 DS -5 12.5 1 . 2 5 - 1 -3. 5 5 40m 400» 5 500« FLL10ME «±ii L-Band PA GaAs/SB N D 15 DS -5 3 0.35 , GaAs/SB N D 15 DS -5 30 4.8 5 -2 3 100» 1 5 1 . 6 FLL101ME «±a L-Band PA GaAs/SB N D 15 DS


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PDF FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLM1011-4C FLK202MH-14 PA flk202xv FLM0910-4C
CD 294

Abstract: FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
Text: for the reliable operation of GaAs FETs: 1 . The drain-source operating voltage (Vpg) should not , 10 8 CO Q_ C/3 6 CO b 0 4 o CL 15 2 H— 1 O A \ \ s \ 0 50 100 150 200 , =OV I 0.5V ■-1.0V — - 1 ,5V Ì2.0V 2 4 6 8 10 Drain-Source Voltage (V) OUTPUT POWER & IM3 vs , (0.098) Y H (0.024) 3.5±0.2 (0.335) [ 0.1 ±0.05 (0.004) 6.1±0.1 (0.240) 1 . Gate 2 , conditions for the reliable operation of GaAs FETs: 1 . The drain-source operating voltage (Vpg) should not


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PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
2007 - L7251-3.1

Abstract: B134G0943#1 AL133-00015.1 MPAW37.1 B133HTN01.1 A602192.1 ce6v14.1 L6284-3.1 1/transistor+ba41 MAR3-T13-144R7-0.1
Text: HEIGHT ( X DIMENSION) NO. OF CHIPS 1 2 3 4 5 UNLEADED ASSEMBLIES NN, NP .100 (2.54) .100 , 154 184 224 274 334 394 474 564 684 824 105 125 155 185 225 275 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 3 3 3 4 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 3 3 3 4 5 1 1 1 1 1 1


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PDF
2010 - AL133-00015.1

Abstract: L7251-3.1 AP6KE9.1 CSA107.1 A608569.1 1/CN0944 1+to+2+MIPI+buffer+IC
Text: Solderless splices CLOSED-END E F L E L Style 2 F Style 1 Style 2 Style 1 , Dimensions mm (in.) Tool No. YS-2622 YS-2216 YS-1614 YS-1210 YS-8S YA- 1 YA-2 YA-4 o o o o o o o o o o o o o o , ) (4.0 to 9.0) CE1(CE-100) CE2(CE-230) CE5(CE-550) CE8(CE-800) 2-SDW 0.5-SD 1 -SD 2-SD 5.5-SD 8-SD 2 1 , (.315) 22.2 (.874) 10.2 (.402) o o o o Nylon o o o o o o o 1 ,000 1 ,000 500 250 1 ,000 5,000 1 ,000 1 ,000 500 250 9.3 (.366) 12.0 (.472) 9.3 (.366) 12.0 (.472) Note: 1 ) Products with the JIS


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PDF E42024 LR20812 JQ0607003 YS-2622 YS-2216 YS-1614 YS-1210 BCT-0514 CE-800/CE-800V) AL133-00015.1 L7251-3.1 AP6KE9.1 CSA107.1 A608569.1 1/CN0944 1+to+2+MIPI+buffer+IC
UL E42024

Abstract: L7251-3.1 A612826.1 1/sn1350 th2167.1 CSA107.1 C2807 ys1614 LR20812 E42024
Text: Solderless splices ¿D ¿B E Style 1 F E L Actual Style 1 Style 2 CE1(CE , (.150) 7.2 (.283) 9.5 (.374) 28.0(1.102) 12.0 (.472) 1 9.5 (.374) 4.5 (.177) o o , 1.75) 1 -SD 15.2 (.598) 5.9 (.232) 8.0 (.315) 2.2 (.087) 5.0 (.197) 6.2 (.244 , to 1.75) 16 to 14 E YA-2 YA-4 22 to 16 ød L F YA- 1 Standard Style , splice. 686022 YS-2622 LR20812 Applicable Wire Note: 1 ) Products with the JIS mark conform


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PDF CE-100) CE-230) CE-550) CE-800) UL E42024 L7251-3.1 A612826.1 1/sn1350 th2167.1 CSA107.1 C2807 ys1614 LR20812 E42024
111L2

Abstract: 13007 h3 PEF41068FV1.1 L6284-3.1 DSTH506010.1 L7251-3.1 AL133-00015.1 j1 3003 E 13007 1/CN0944
Text:  1 MIL-M-38510/320C 6 March 1985_ SUPERSEDING MIL-M-38510/320B 28 February 1984 MILITARY , ioecification is approved for use by all Departments and Agencies of the Department of Defense. 1 . SCOPE , , cascadable Presettable 4-bit binary counter, cascadable Q3 Decade counter 04 4-bit binary counter 1 2 2 , -38510, appendix C) A F-l (14-lead, 1 /4" x 1 /4"), flat package i F-3 14-lead 3/16" x 1 /4"), flat package f D-l (14-lead, 1 /4" x 3/4"), dual-in-line package o c ; (U lead 1 /4" x 3/8"), flat package \ cl (terminal


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PDF MIL-M-38510/320C MIL-M-38510/320B MIL-M-38510, officei1985-505-038 111L2 13007 h3 PEF41068FV1.1 L6284-3.1 DSTH506010.1 L7251-3.1 AL133-00015.1 j1 3003 E 13007 1/CN0944
L7251-3.1

Abstract: L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 PEF3304EV2.1 DSTH506010.1 AU1329.1 A612826.1 PMB6256-V1.1
Text: 1 Datasheet D 2DFDD D 7!F D"#$FD 8F7 8%995&'7"D 1 1 %DC78C4E91 E59133AA14A38C4E119AA713A74EC8C4E1 1 CE17 , A59A8#1431FA1F7CEA91 %DC78C4E918813A@6C3A104C7A1AE681 1 /A1BA7C3C78C4E91 11 A38CE14&A3196D13EA 1 "01841">01 *AEA3D1+A973C8C4E1 ,-./01 1 AE2DA91 735C4C51 5C3A78CC8 1 83461 2AF1343FCE 1 8A7E4D4 1 69CE1 8&41 4FEC5C3A78C4ED1 FC7344EA91 D7A51 FF1 38"1 ,AF1 343FCE1 8A7E4D4 1 34C5A91 93A31 5C3A78CC8 1 8


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PDF 8C4E91 E59133AA14 13A74 8C4E19 98AF91 2DA15A C7A91967 91F42CDA1 CEA91 8C4E918 L7251-3.1 L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 PEF3304EV2.1 DSTH506010.1 AU1329.1 A612826.1 PMB6256-V1.1
th2167.1

Abstract: L7251-3.1 AL133-00015.1 NJW1167V QFP32 NJW1167FJ2 SDIP32 SSOP32 PMB6610RV2.1 TK1337.1
Text: CVB CVW CTH CTL CSR GND V+ Vref - 1 - NJW1167/A s SSOP32, SDIP32 INa INb 32 , 13 ADR CTL 20 14 SDA CSR 19 15 SCL Vref 18 16 No. 1 GND V+ 17 No V+ 1 INa 17 2 SR-FIL 18 Vref 3 , 28 TONE-Hb 13 ADR 29 LF1 LPF 1 14 SDA I2C 30 LF3 LPF 3 , TONE-Haa PORT0 GND AUX1 INa AUX0 V+ AGC1 INb OUTa Vref OUTW LF2 1


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PDF NJW1167/A NJW1167/ALPF NJW1167V NJW1167AL NJW1167FJ2 NJW1167: SSOP32, QFP32-J2 NJW1167A: th2167.1 L7251-3.1 AL133-00015.1 NJW1167V QFP32 NJW1167FJ2 SDIP32 SSOP32 PMB6610RV2.1 TK1337.1
L7251-3.1

Abstract: aa705 L6284-3.1 CD3E0P.1 1/CN0944
Text: 1 1234456734 1 89ABCDE1ACF8C19BCEF99BC3EC9C 1 1C3B1BEFCAB9911 DE51F33B31111E5 1 51 ! 1 "1!"51 #561$1%%&'1"61566561##"!71 D" 1 E5(5151!16!)5* 1 E51F33B31"561 E)E1)! 1 "51! 1 " 1 )! 1 "571+55!)1E)E1)! 1 "51 "615, 1 )!* 1 E51F33B31E5#1#6"(51655(561 5!( 1 E6")E1E)E1)! 1 ! 1 "1!"51)6571 +55!) 1 " 1 )! 1 "51"616"!) 1 )!* 1  1 #51-F$ 1 6 1 "1"561E)E561!5671


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PDF 89ABCDE1ACF DE51F D5665 1F/D15 E5165 L7251-3.1 aa705 L6284-3.1 CD3E0P.1 1/CN0944
1998 - SS10

Abstract: SS106 SS108 sh362 L7251-3.1 ce6v14.1 1/CN0944
Text: WR SULRU DSSURYDO EDVHG RQ WKH VDLG DFW1 7DEOH RI &RQWHQWV 41 *( 1 (5$/ 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 404 414 )HDWXUHV 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 406 415 3URGXFW 6HULHV 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 407 416 %ORFN 'LDJUDP 1 1 1 1 1


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ANI 1015

Abstract: LT 5251 TEA 1091 L7251-3.1 S11595.1 1/CN0944 PMB6610RV2.1
Text: for use by all Departments and Agencies of the Department of Defense. 1 . SCOPE 1.1 Scope. This , : Out!i ne 1etter Case outline (see MIL-M-38510 , appendix C) E D-2 (16 pin, 1 /4" x 7/8"), dual-in-line package F F-5 (16 pin, 1 /4" x 3/8"), flat-package 2 C-2 (20-terminal, .350" x .350"), square chip , ) Storage temperature range - -65 C to +150 C Maximum power dissipation (Pq) per gate _ 1 /- 55 roW , ) - - -.+ 1 65 ° C 7/ Maximum output current- - - - - - - - - - - -50 mA 1 / Must


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PDF MIL-M-38510/62A MIL-M-38510/62 MIL-M-3851D. MIL-M-38510/62A ANI 1015 LT 5251 TEA 1091 L7251-3.1 S11595.1 1/CN0944 PMB6610RV2.1
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