The Datasheet Archive

FLK102 datasheet (3)

Part Manufacturer Description Type PDF
FLK102MH-14 Others High Frequency Device Data Book (Japanese) Scan PDF
FLK102MH-14 Others FET Data Book Scan PDF
FLK102XV Others FET Data Book Scan PDF

FLK102 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 FLK202 "FLL105" FLL-300-1
Text: FLU17 % · FLL171 FLC161 FLC103 FLK202 FLK102 c o R106 30 FLU10 · · FLL101 FLC091


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PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 FLK202 "FLL105" FLL-300-1
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: -8 FLX102MH-12 FLX202MH-12 FLK102MH-14 FLK202MH-14 253-6 253-8 102-12 202-12 102-14 202-14 Case Style


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FLK102XV

Abstract: FLK102
Text: FLK102XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power , Reliability I Drain DESCRIPTION Drain É The FLK102XV chip is a pow er GaAs FET that is , 62 1998 Microwave Databook FLK102XV FUJITSU GaAs F ET and HEMT Chips Total Power , Microwave Databook 63 Data Sheets FLK102XV Fujrrsu GaAs FET and HEMT Chips S-PARAMETERS VDS , FLK102XV F l in r c i I rUJlliU GaAs FET and HEMT Chips CHIP OUTLINE S o u rc e e le c tro d


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PDF FLK102XV FLK102XV 25\xm FLK102
FLC301XP

Abstract: FUJITSU MICROWAVE fsx52 XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Text: FLC081XP FLC151XP FLC301XP ·FSX017X FSX51X FSX52X FLX252XV FLK012XP FLK022XV* FLK052XV FLK102XV FLK202XV


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PDF FLC081XP FLC151XP FLC301XP FSX017X FSX51X FSX52X FLX252XV FLK012XP FLK022XV* FLK052XV FLC301XP FUJITSU MICROWAVE fsx52 XP 215 FLK202 FSX51 FLC151
1998 - Not Available

Abstract: No abstract text available
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE


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PDF FLK107MH-14 FLK102MH-14 FCSI0598M200
FLL101ME

Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLM1011-4C FLK202MH-14 PA flk202xv FLM0910-4C
Text: ) Pout=30dBm. Gp=6. 5dBtyp f=14. 5GHz. ldB|iJi#l±SI^ UT FLK102XV Pout=32.5dB».Gp=6dBtyp f


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PDF FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLM1011-4C FLK202MH-14 PA flk202xv FLM0910-4C
2004 - Not Available

Abstract: No abstract text available
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE


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PDF FLK107MH-14 FLK102MH-14
FLK202MH-14

Abstract: FLK052WG
Text: F FLK022W G FLK052W G FLK102MH-14 * FLK202MH-14* FLR016FH FLR026FH * Input Matched MH WF WG WG MH


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PDF FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG
M 1661 S

Abstract: No abstract text available
Text: FLK102XV GaAs FET and H E M T Chips FEATURES · · · · High Output Power: P-|dB = 30.0dBm(Typ.) High Gain: G-j^B = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability f u j Ït s u I Drain Drain Drain Drain I DESCRIPTION The FLK102XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power , u FLK102XV GaAs FET andHEMT chips CHIP OUTLINE Source electrodes are connected to the PHS


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PDF FLK102XV FLK102XV M 1661 S
1998 - FLK102MH-14

Abstract: FLK102MH14 1.5 j50
Text: FLK102MH-14 X-Ku Band Power GaAs FETs FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ , Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose , 268 Data Sheets FLK102MH-14 X-Ku Band Power GaAs FETs POWER DERATING CURVE 10 Total Power , 269 1998 Microwave Databook hadd (%) 40 FLK102MH-14 X-Ku Band Power GaAs FETs +j50 , FLK102MH-14 X-Ku Band Power GaAs FETs Case Style "MH" Metal-Ceramic Hermetic Package 2. 2


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PDF FLK102MH-14 FLK102MH-14 FLK102MH14 1.5 j50
1998 - FLK102MH-14

Abstract: FLK102 FLK107MH-14 KU 608
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance


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PDF FLK107MH-14 FLK102MH-14 FCSI0598M200 FLK102 FLK107MH-14 KU 608
FLK107MH-14

Abstract: FLK102MH-14 fujitsu gaas fet
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 6.5dB(Typ.) .HighPAE:riadd = 31%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE


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PDF FLK107MH-14 FLK102MH-14 FCSI0598M200 FLK107MH-14 fujitsu gaas fet
Not Available

Abstract: No abstract text available
Text: F L K l 02MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-| FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest


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PDF 02MH-14 FLK102MH-14
Not Available

Abstract: No abstract text available
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent


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PDF FLK107MH-14 FLK102MH-14
FLC301XP

Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25 C) VDS (V) VOS 00 Recommended Pt (W) Maximum Operating Tc=25°C Voltage (V) PART NO. FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Rth (°C/W) o HI (fi* Tch (°C) 3.5 3.5 3.5 3.5 3.5 4.0 3.5 3.5 3.5 12 12 12 15 15 15 15 15 15 15 15 15 12 12 12 12 -3 -3 -3 -3 -3


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PDF FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151
FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: /WF FLK022XV/XP/WG FLK052XV/WG FLK102MH-14 /XV FLK202MH-14 Forward Gate Current(mA) 0.2 0.2 0.2 0.2 0.2 , FLC301XP !O CD 10 FLK202XV 5 FLK102XV FLC081XP FLR106XV E ö > 0.1 0.2 0.3 0.4 0.5 , 326 Application Notes APPLICATION NOTES FLK012XP, FLK022XP FLK052XV FLK102XV Fujnsu , 0.36 1.5 1.0 0.11 0.08 1.3 0.9 0.03 0.035 1 2 1 2 N/A N/A 10 10 60 120 FLK102XP 0.093 0.1 3.3 0.8 0.17


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PDF
2004 - FLK107MH-14

Abstract: FLK102MH-14
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance


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PDF FLK107MH-14 FLK102MH-14 FLK107MH-14
Not Available

Abstract: No abstract text available
Text: FLK102MH14 Transistors N-Channel UHF/Microwave MESFET V(BR)DSS (V)15 V(BR)GSS (V) I(D) Max. (A)400m P(D) Max. (W)7.5 Maximum Operating Temp (øC) I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct. g(fs) Max; (S) Trans. conduct; @V(DS) (V) (Test Condition) @I(D) (A) (Test Condition) V(GS)off Max. (V) @V(DS) (V) (Test Condition) Power Gain Min. (dB) @V(DD) (V) (Test Condition) @I(D) (A) (Test Condition) @Freq. (Hz) (Test


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PDF FLK102MH14
1998 - FLK102MH-14

Abstract: FLK107MH-14
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance


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PDF FLK107MH-14 FLK102MH-14 FCSI0598M200 FLK107MH-14
FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: TI ()i\ NOTES 28) FLK102MH-14 APPLICATION OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER


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PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
FLK102

Abstract: No abstract text available
Text: FLK102XV ( iiiAs E E l and H E M T Chips S-PARAMETERS lEQUENCY (MHZ) 100 500 1000 1500 2000 2500 3000


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PDF LK102 250mA 10pes, FLK102
FLC081XP

Abstract: FLC253MH-8 FLC253MH-6 FLC091WF FLK012WF FLC053WG FLC103WG FLK022WG FHX15FA FLK052WG
Text: }#Œ|g,iâ 200 GSDS FLK102MH-14 , 125» FLK102MB-H ®±a Ku-Band PA GaAs fi D 15 DS -5 1. 5 0.6 5 -1 -3.5 5 20m 200» 5 250» -


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PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLK012WF FLC053WG FLC103WG FLK022WG FHX15FA FLK052WG
2000 - FLK102

Abstract: FLK102MH-14 FLK107MH-14 ku Band Power GaAs FET
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance


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PDF FLK107MH-14 FLK102MH-14 FLK102 FLK107MH-14 ku Band Power GaAs FET
CD 294

Abstract: FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
Text: No file text available


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PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
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