The Datasheet Archive

FLC053W datasheet (2)

Part Manufacturer Description Type PDF
FLC053WG Others High Frequency Device Data Book (Japanese) Scan PDF
FLC053WG Others FET Data Book Scan PDF

FLC053W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM FLL351ME
Text: -2* FLL300IL-3* ·FLL300IP-2 FLC053W G FLC091W F FLC103W G FLC161W F FL.C253MH-6* FLC253MH-8* FLC 31 1M G -4


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PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 fll171 flu10 fll300ip-2 FLU10XM
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: FSX017WF FSX51WF FSX52WF C091 C161 K012 X017 X51 X52 O S '\ 0 T T Part Number ^ Lot Number FLC053WG


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FLC053

Abstract: FLC053WG
Text: FLC053WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output , Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC053WG is a power GaAs FET that is designed , Data Sheets FLC053WG PI IirrCI I r UJ11 j U C-Band Power GaAs FETs Total Power Dissipation , Databook FLC053WG FUJITSU C-Band Power GaAs FETs S-PARAMETERS EQUENCY (MHZ) S11 V DS = , 1998 Microwave Databook 226 Data Sheets FLC053WG FUJITSU C-Band Power GaAs FETs Case


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PDF FLC053WG FLC053WG FLC053
FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: -1 FLL200IB-2 FLL200IB-3 FLL300IL-1 FLL300IL-2 FLL300IL-3 FLL300IP-2 FLC091WF FLC161WF FLC311MG-4 FLC053WG


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Not Available

Abstract: No abstract text available
Text: C-Bcinci Power d a As FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol Vd S vgs pt FLC053WG Condition Rating 15 -5 Unit V V Tc = 25°C 3.75 -65 t o +175 175 w Tstg Tch °c °c Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (V q s ) should not exceed 10 volts. 2. The forward


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PDF FLC053WG 1000Q.
FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: FLM7177 -4D, -8D, -12DA) 7.7 - 8.5 GHz (Use FLM7785 -4D, -8D, -12DA) FSX51WF FLC053WG FUJITSU , GHZ (Use FLM5964-4D, -12DA, -25DA) 6.4 - 7.2 GHz (Use FLM6472-4D, -12DA, -25DA) FSX51WF FLC053WG , FLM4450-4E, -12DA, -18DA) 5.9 - 6.4 GHz (Use FLM5964-4D, -12DA, -18DA) FSX51WF FLC053WG -18DA , FLC053WG -25DA P1dB = 46.5 dBm -4(X) -18DA -25 DA FUJITSU Application Notes 351 1997 , 361 1997 Microwave Databook APPLICATION NOTES 17) FLC053WG APPLICATION OUTPUT POWER vs


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PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
FLC081XP

Abstract: FLC253MH-8 FLC253MH-6 FLC091WF FLK012WF FLC053WG FLC103WG FLK022WG FHX15FA FLK052WG
Text: 20m 0.2 5 0.3 FLC30ME C-Band PA GaAs N D 15 DS -5 11. 5 1.8 5 -2 3 40m 0.4 5 0.6 FLC053WG , FLC053WG Pout=28. 5dBm, Gp=6. 5dBtyp f=8GHz, Pin=22dBm 143 ttSFLC091»F FLC081WF


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PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLK012WF FLC053WG FLC103WG FLK022WG FHX15FA FLK052WG
1998 - FLC053WG

Abstract: FLc053
Text: FLC053WG C-Band Power GaAs FETs FEATURES · · · · · High Output Power: P1dB = 27.0dBm(Typ.) High , DESCRIPTION The FLC053WG is a power GaAs FET that is designed for general purpose applications in the C-Band , 224 Data Sheets FLC053WG C-Band Power GaAs FETs POWER DERATING CURVE 5 Total Power , FLC053WG C-Band Power GaAs FETs +j50 +j25 10 S11 S22 +j100 2GHz +90¡ S21 S12 3 9 +j10 7 , 163.0 154.6 145.1 135.1 1998 Microwave Databook 226 Data Sheets FLC053WG C-Band Power GaAs


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PDF FLC053WG FLC053WG FLc053
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