The Datasheet Archive

FK20VS-5 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
FK20VS-5 FK20VS-5 ECAD Model Mitsubishi Nch POWER MOSFET Original PDF
FK20VS-5 FK20VS-5 ECAD Model Renesas Technology MITSUBISHI Nch POWER MOSFET Original PDF

FK20VS-5 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - Not Available

Abstract: No abstract text available
Text: . Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE FK20VS-5 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX , ) MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25 , TEMPERATURE TC (°C) MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE OUTPUT , CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE


Original
PDF
UJ2C

Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE FK20VS-5 OUTLINE DRAWING , - 2 7 MITSUBISHI Neh POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL , E VDS (V ) 3 - 2 8 MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FK20VS-5 , MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 U , MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 v


OCR Scan
PDF FK20VS-5 150ns O-220S UJ2C
Not Available

Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE FK20VS-5 Vdss , ELECTRIC Feb. 1999 MITSUBISHI Neh POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS , MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE ce ce ZI O z < ce O 20 16 12 OUTPUT CHARACTERISTICS (TYPICAL , CURRENT ID (A) A MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI Neh POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING , MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) O o ^ s er m


OCR Scan
PDF FK20VS-5 150ns O-22QS
1998 - FK20VS-5

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE FK20VS-5 OUTLINE DRAWING r , .1999 MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25 , 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20VS-5 , .1999 MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE , 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20VS-5


Original
PDF FK20VS-5 150ns O-220S FK20VS-5
1998 - FK20VS-5

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE FK20VS-5 OUTLINE DRAWING r , .1999 MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25 , 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20VS-5 , .1999 MITSUBISHI Nch POWER MOSFET FK20VS-5 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE , 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20VS-5


Original
PDF
1998 - FK20VS-6

Abstract: No abstract text available
Text: 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr ¡VDSS , 150 CASE TEMPERATURE TC (°C) 200 102 7 5 3 2 tw=10µs 101 7 5 3 2 1ms 100 7 5 3 2 100µs 10ms TC = 25°C Single Pulse DC 10­1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20VS , 0.1 0 10­1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT


Original
PDF FK20VS-6 150ns O-220S FK20VS-6
Not Available

Abstract: No abstract text available
Text: temperature Weight Typical value Ratings 300 ±30 20 60 20 60 150 - 5 5 - +150 - 5 5 - +150 1.2 Unit V V A , Thermal resistance Reverse recovery time 8, 5 - VDS = 25V, VGS = 0V, f = 1 MHz - - - - , DISSIPATION DERATING CURVE 102 7 5 3 2 10' MAXIMUM SAFE OPERATING AREA -r sk tVVs=10 rH s- S -'s - s 's tm s s s. s s. S s. 10C us t V S s V 1m s _ V -s s -H \ \ \ V 10r ns V s L U C E CE 7 5 - T 3 O z < 3 *-2 10" 7 5 3 2 IO"' 10» 2 3 oc Q " I r - i cr Single Pulse DC


OCR Scan
PDF FK20VS-6 150ns
mosfet fs series

Abstract: TO-3P
Text: -3P TO-220 TO-220S TO-22DFM TO-3P TO-3P o o_ FK16UM- 5 FKI6VS- 5 FKI6KM - 5 FK16SM- 5 FK20UM- 5 FK20VS-5 FK20KM- 5 FK20SM- 5 FK25SM- 5 FK30SM- 5 FK16UM-6 FKt6VS-6 FK16KM-6 FKISSM-6 FK20UM-6 FK20VS-6 FK20KM


OCR Scan
PDF O-220 O-220S O-220FN O-220 T0220S mosfet fs series TO-3P
Not Available

Abstract: No abstract text available
Text: m UBEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 ShOTt Form Ddtd Selector Guide Discrete MOSFET - Medium Voltage (continued) FK Series MOSFETs (250 ~ 600V) Fast Recovery Diode (trr = 150nS) Maximum Ratings, Tc = 25°C Device Number FK16UM- 5 FK16VS- 5 FK16KM- 5 FK16SM- 5 FK20UM- 5 FK20VS-5 FK20KM- 5 FK20SM- 5 FK25SM- 5 FK30SM- 5 FK16UM-6 FK16VS-6 FK16KM-6 FK16SM-6 FK20UM-6 FK20VS-6 FK20KM-6 FK20SM-6 FK25SM-6 FK30SM-6 FK10UM-9 FK10VS-9 FK10KM-9 FK10SM-9 FK14UM


OCR Scan
PDF 150nS) FK16UM-5 FK16VS-5 FK16KM-5 FK16SM-5 FK20UM-5 FK20VS-5 FK20KM-5 FK20SM-5 FK25SM-5
1998 - Not Available

Abstract: No abstract text available
Text: 9.8 ± 0.5 3.0 ­0.5 +0.3 1.5MAX. 10.5MAX. 0 ­0 +0.3 1 5 0.8 0.5 q w e wr 2.6 , OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 POWER DISSIPATION PD (W) tw=10µs 100µs 1ms 10ms TC , TEMPERATURE TC (°C) 0 10­1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb , Test 0.4 20V 0.3 VGS = 10V 8 20A 4 10A 0.2 0.1 0 10­1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 , CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 102 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 101 7


Original
PDF
1998 - FK20VS-6

Abstract: No abstract text available
Text: 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr ¡VDSS , 150 CASE TEMPERATURE TC (°C) 200 102 7 5 3 2 tw=10µs 101 7 5 3 2 1ms 100 7 5 3 2 100µs 10ms TC = 25°C Single Pulse DC 10­1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20VS , 0.1 0 10­1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT


Original
PDF
Not Available

Abstract: No abstract text available
Text: \ S \ V \ 0 50 100 150 200 CASE TEMPERATURE Tc (°C) LU CE CE ZI o z < CE O 102 7 5 3 2 101 7 5 3 2 10° 7 5 3 2 10-1 -Tc = 25°C ' "Single Pulse' tw=10^s loop 1msl 10ms DC: 10° 2 3 5 7101 2 3 5 7102 2 3 5 7103 DRAIN-SOURCE VOLTAGE VDS (V) A MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI , (TYPICAL) VGS=20V 10V h y ' 6V Tc = 25°C / f \ \ V v 5 5V. f-" - 5d = x , y lu o< w I-±<ü 5 = w S LU ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 : 2L 0.4 0.3 0.2 0.1


OCR Scan
PDF FK20VS-6 150ns O-22QS 57kh23
FS10KM12

Abstract: FS10SM16A FS20KM-5 CT40TMH FS7UM16A FS10SM18A FS18SM10 CT60AM-20 FS7UM-16A FX6KM-06
Text: ) · O FK20KM- 5 FK20UM- 5 FK20VS-5 FK20SM- 5 (0.240) · O FK20KM-6 FK20UM-6 FK20VS-6 FK20SM-6 (0.330 , (0.240) FS5*J-03 5 (0.170) 0 · O t 0 · O 0 · O 0 · O t 0 · O (0.660) t FS2*J-2 FS02" J-2 FS , 0.3 1 0.3 1 2 (0.280) FS5' *-03 5 0 FS2ASJ-3 · FS2KMJ-3 O FS2UMJ-3 FS2VSJ-3 (0.750) 0 · O , -03 (1.90) t FS1*H-3 (1.250) t FS2*H-06 2 (0.260) FS5*'H-03 5 (0.20) 0 · 0 t 0 · 0 0 · 0 0 · 0 t , -12 (2.60) · FS5KM- 5 O FS5UM- 5 FS5VS- 5 (1.30) · FS7KM- 5 O FS7UM- 5 FS7VS- 5 (0.80) · FS10KM- 5 O FSIO U M - 5


OCR Scan
PDF O-220S CT20VS-8 CT20VSL-8 O-220C O-220F CT20TM-8 CT20AS-8 CT20ASL-8 CT20ASJ-8 CT20VM-8 FS10KM12 FS10SM16A FS20KM-5 CT40TMH FS7UM16A FS10SM18A FS18SM10 CT60AM-20 FS7UM-16A FX6KM-06
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: ···························································································3 to 5 Small Signal Transistors ·································································6 , 11GHz) and high breakdown voltage (VCEO = 5 V) 2.8 Features + 0.10 0.16 ­ 0.06 0.3 2.95 , 15 15 15 15 15 15 15 5 Small Signal Transistors !General Amplification Package TO , Characteristics toff (µs) hFE typ 2 k to 100 k 0.8 From 2 k 0.9 2 k to 10 k - From 4 k - 5 k to 30 k , 15 10.5 5 7.8 4 8.5 6 9 7 10 11 - 9.0 9.0 9.0 3.5 6.0 3.8 2.4 2.9 0.94 1.2


Original
PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: ······················································································ to 5 3 Small Signal Transistors ··························································6, 7 , 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 5 Small , From 2 k 2 k to 10 k From 4 k 5 k to 30 k 2 k to 30 k : Mass production SPL: Samples available , 1.0 0.9 0.4 5 1.1 0.9 1.3 7.8 1.1 0.9 0.9 4 1.1 0.9 1.15 8.5 1.1 0.9 0.9 6 1.0 , (V) (A) 3.5 12 m 3.5 35 m 3.5 35 m 3.5 35 m 4 12 m 4 35 m 4.6 12 4.6 35 5 100m


Original
PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: -1 STD60NH03L-1 STC6NF30V 5 Device Direct ST nearest Device Fairchild FDW2503N FDW2503NZ


Original
PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
BS-A422NW-LC2.5

Abstract: CS-DSSMDB9MM0-002.5 NP33S168128K-7.5 SA43-21GWW-7.5 md-32h1.5 FRX11.5 GL8E03D.5 QS702-1.5 MS20427F4-4.5 LP3992LMFX1.5
Text: 75E;54E651E)7575E; 5 EEF6,8AC75BCDB57;CFC7F,58E65 F78"5 B7512 1 54E61!5C855C75;E65FB6DCD596CE)85<AA76, 5 $E+76755BB75FE8)765 $6E)FA858)FB585EE65FB6DCD5776D7F, 5 <F0)$ 5 <AA76C78" 5 5 =CAB55F757;CFC7F,5E;5A,$CF, 5 >54E61!5DC9785AB75 5CDBA?5 FECACE855CF67875<AA76, 5 C;7556)5AC75C5585;EEA$6CA 5+BCFB5F5 <7578C, 5 FFEEA75C5 AB7578CD5E; 5 $E6A<75$6E)FA8" 5 B75


Original
PDF 123456789ABCD9EFFB 5BCDB57; B7512 E65FB FA858 AA76C78 5DC9785AB75 5AE579A7 95CD567895 BS-A422NW-LC2.5 CS-DSSMDB9MM0-002.5 NP33S168128K-7.5 SA43-21GWW-7.5 md-32h1.5 FRX11.5 GL8E03D.5 QS702-1.5 MS20427F4-4.5 LP3992LMFX1.5
MLF473F.5

Abstract: SP-7-405-1-.5 LM136-2.5
Text:  856751234;5$6E)FA5C75E<54E6-1 8575E< 5 EEF6,8AC75BCDB57< 5 $E+76755BB75FE8)765 $6E)FA858)FB5 , 85+C677885878E685$E6A=75C8A6)7AACE55 5 =F.)$ 5=AA76C78"5 5 >CAB55F757< 5 +<76579754E6-1 85DC975AB75=CCA,5AE577A756) 5 AC757975C5@E+ 5 CDBA@5FECACE855CF67875=AA76, 5 C<7556)5AC75C5585 5 +BCFB5F5=75 78C, 5 FFEEA75C5AB7578CD5E<54E6A=7546E)FA8" 5


Original
PDF 123456789ABCD9EFFB B7512 85C85 E65FB FA858 AA76C78 85DC975AB75 5AE577A7 95CD567895 MLF473F.5 SP-7-405-1-.5 LM136-2.5
2008 - l-band Phase Shifter

Abstract: remec Microwave RM4300 magnum microwave LM136-2.5
Text: degrees RMS Phase Error 5 4 3 2 1 0 1.1 1.15 1.2 RMS error = 1 N N i =1 x i2 where , (States 0-32) PHASE (Deg) State # 0 0 2.8125 1 5.625 2 8.4375 3 11.25 4 14.0625 5 16.875 6 19.6875 7 22.5 , 81.5625 29 84.375 30 87.1875 31 90 32 180 Pad 4 Pad 5 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 90 Pad 7 Pad 8 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5


Original
PDF RM4300, RM4300 50-Ohm 12-mil l-band Phase Shifter remec Microwave magnum microwave LM136-2.5
LTC1962EMS8-2.5

Abstract: LM136-2.5
Text: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 4 459A#$E%525525&33'5($E#$E55 $F)ED) 5 *)+ 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/ 5 $F)ED) 5 *)+ 5-E5 *FD";0FED5 15 :525>5253>55 555555555 .525&?4.5252 .! 5 15 @#5EB525B65B$E#$E5$)DAE5 15 ($E#$E5#B-D)5A5$#5EB5&33'55 & 15 ;B-D) 5 /DAE25B54'55A 55 15 C66DA


Original
PDF 1232456773849AB732 4CDE457FC7A4 2F37F4 9AB732 4CDE457FC7A41 567897A94BC76DACEF4 5EB52 5B65B E25B5 0050BF/5D66 LTC1962EMS8-2.5 LM136-2.5
BS-A422NW-LC2.5

Abstract: SP-7-405-1-.5 ZR4040-2.5 LM136-2.5
Text: 93% ± 2% 56 Days AC/C: < ± 5 % < 50.10 - 4 at 1 KHz > 50% o f lim it value +85°C 1000h 1 .2 5 X V n AC/C: < < < > ± 5 % 3 0 .1 0 - 4 a t1 0 K H z for C c p F 20.10 - 4 at 1 K Hz for , ental conditions. P erform ance C apacitance change: MMY D im ensions 0 .0 0 1 0 .0 0 1 5 0 .0 0 2 2 0 .0 0 3 3 0 .0 0 4 7 0 .0 0 6 8 0 .0 1 0 0 .0 1 5 0 .0 2 2 0 .0 3 3 0 .0 4 7 0 .0 6 8 0 .1 0 0 .1 5 0 .2 2 0 .3 3 0 .4 7 0 .6 8 1 .0 1 . 5 2 .2 3 .3 4 .7 6 .8 10 1 0 0


OCR Scan
PDF D51tDb7 DD01521 BS-A422NW-LC2.5 SP-7-405-1-.5 ZR4040-2.5 LM136-2.5
DEK 5 FWZ 1-10

Abstract: gw158 gw 108 GW CSSRM2.PM-N3-A333-1 0132961032 GW 17 Polyamid GW CSHPM1.EC-KULQ-A737-1 LM136-2.5
Text: data Colour Qty Pitch Printing variations No. of characters Dek 5 Available in all colours , violet grey white 500 pcs DEK 5 = 5 mm : DEK 6 = 6 mm : DEK 6.5 = 6.5 mm : DEK 8 = 8 mm FZ = consecutive horizontal e.g. DEK 5 FW 1-50 FS = consecutive vertical e.g. DEK 5 FS 51-100 FWZ = consecutive horizontal line e.g. DEK 5 FWZ 1-10 FSZ = consecutive vertical line e.g. DEK 5 FSZ 21-30 GW = identical horizontal e.g. DEK 5 GW A GS = identical vertical e.g. DEK 5 GS B vertical max. 3 characters Dek 6


Original
PDF Tem60101 DEK 5 FWZ 1-10 gw158 gw 108 GW CSSRM2.PM-N3-A333-1 0132961032 GW 17 Polyamid GW CSHPM1.EC-KULQ-A737-1 LM136-2.5
roederstein tantalum

Abstract: 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5
Text: rate Leads: tinned Dimensions Standard version Sif +i IO \ RM S style D ETPW 5 ±0, 5 yt 0 d 5 ±0, 5 5 ±0, 5 Capacitors must not correspond with the sketches, only the dimensions have to , max. H max. Style S,DS,L H2 max. RM ±0, 5 0 d ± 0,05 ETPW 1 4, 5 7, 5 10, 5 2, 5 0, 5 ETPW 2 5 9, 5 12, 5 2, 5 0, 5 ETPW 3 6 10, 5 13, 5 2, 5 0, 5 ETPW 4 6, 5 11, 5 14, 5 2, 5 0, 5 ETPW 5 9 14 17") 5 0, 5 ETPW 6 9, 5 17 20 5 0, 5 1 only "S" style VISHSV INTER/ ROEHERSTEIN bBE P ■7SSlb2H Q001187 044


OCR Scan
PDF 7fl21b24 roederstein tantalum 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5
2005 - toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC VA MARKING smd marking Yd rn4983 XA marking 2SC3327 LM136-2.5 RN1101F
Text: . 71 71 72 72 72 73 5 3.4 3.5 3.6 4. 5 . 6. 7 , ] . 101 [ 5 ] . , ] 5 VCEO (V) ICEO (mA) R1 (k) R2 (k) 4.7 4.7 22 22 22 22 , 0.1± 0.05 0.1 ± 0.05 3 0.7 ± 0.05 0.35 0.35 0.1± 0.05 1 6 3 2 5 0.8± 0.05 1.0 , 120 min 100 min 60 min 30 min 5 5 5 5 5 5 5 5 5 5 5 5


Original
PDF 050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC VA MARKING smd marking Yd rn4983 XA marking 2SC3327 LM136-2.5 RN1101F
BEPC-13-1110cph-w-p2.5

Abstract: ZR4040-2.5 LM136-2.5
Text: B Q Q 0 7 SHEET AMP 2 2 5 5 5 0 - T YY AMP 2 2 5 5 5 0 - 3 2 2 9 9 -1 YY WW WW IN S T R U C , STRIP LENGTH I5Ü P ER 5E D ED A I0 B 5 Q L E T E BY 2 2 5 5 5 0 - 6 TIM ES A A - 5 B S 6 R G - 1 4 2 /U ,1 4 2 A /U g 1 4 2 B /U TIM ES A A - 5 0 0 7 R 6 - 5 S B A J ,6 2 B /U £ BSX 7 0 0 2 - 5 9 /IJ R G - 5 B A /U £ 5B C /U R G -1 8 0 /U , 1 BÛA/IJ £ 1B Û B/U MICRODOT 2 5 0 - 4 1 7 2 £ 2 5 0 - 4 2 0 8 MICRODOT 2 5 0 - 4 1 7 1 g 2 5 0 - 4 2 0 7 R G -3 9 3 /U R G -2 2 5 /U R G - 9 /U ,9 A /U ,9


OCR Scan
PDF /jjrrfi03il BEPC-13-1110cph-w-p2.5 ZR4040-2.5 LM136-2.5
Supplyframe Tracking Pixel