The Datasheet Archive

FK18SM-12 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
FK18SM-12 FK18SM-12 ECAD Model Mitsubishi Nch POWER MOSFET Original PDF
FK18SM-12 FK18SM-12 ECAD Model Renesas Technology MITSUBISHI Nch POWER MOSFET Original PDF
FK18SM-12 FK18SM-12 ECAD Model Mitsubishi Power MOSFET for High Speed Switching Use Scan PDF

FK18SM-12 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - Not Available

Abstract: No abstract text available
Text: FK18SM-12 High-Speed Switching Use Nch Power MOS FET REJ03G1393-0200 (Previous: MEJ02G0244 , VDS = 0 V Typical value Rev.2.00 Jul 07, 2006 page 1 of 6 FK18SM-12 Electrical , (°C) Drain-Source Voltage VDS (V) Rev.2.00 Jul 07, 2006 page 2 of 6 FK18SM-12 Output , Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Jul 07, 2006 page 3 of 6 FK18SM-12 , Temperature Tch (°C) Channel Temperature Tch (°C) Rev.2.00 Jul 07, 2006 page 4 of 6 FK18SM-12


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PDF FK18SM-12 REJ03G1393-0200 MEJ02G0244-0101) PRSS0004ZB-A
1998 - FK18SM-12

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING , 0V A A A W °C ­55 ~ +150 4.8 °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 , ) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE OUTPUT , 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED , ) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 REVERSE RECOVERY TIME trr (ns) 1.4 VGS =


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PDF FK18SM-12 150ns FK18SM-12
FK18SM-12

Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 Vdss , MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE ELECTRICAL , ) A Feb. 1999 MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE , CURRENT ID (A) A MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED , POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL


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PDF FK18SM-12 150ns FK18SM-12
1998 - FK18SM-9

Abstract: No abstract text available
Text: ID (A) 50 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V PD = 250W 6V 16 12 5V 8 4 4V 4V 0 0 10 20 30 40 0 50 0 4 8 12 16 20 , = 35A 16 18A 8 9A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON , ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 40 24 16 8 0 0 4 8 12 16 20 , ) DRAIN-SOURCE VOLTAGE VDS (V) 16 VDS = 100V 12 8 200V 400V 4 0 0 20 40 60 80


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PDF
1998 - FK18SM-10

Abstract: No abstract text available
Text: CURRENT ID (A) PD = 250W 16 6V 12 5V 8 TC = 25°C Pulse Test 4 4V 0 0 10 20 30 40 4V 0 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V , 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE , ID (A) 24 16 8 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) VDS = , VOLTAGE VDS (V) 16 VDS = 100V 12 8 200V 400V 4 0 0 20 40 60 80 40


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PDF
circuit diagram of UPS

Abstract: UPS circuit diagram CIRCUIT DIAGRAM UPS 0.5 kva inverter circuit diagram FK25SM-6 UPS design Guide CIRCUIT DIAGRAM
Text: FK18SM-9 FK18SM-10 FK14SM- 12 FK20SM-9 FK20SM-10 FK18SM-12 KVA 0.3 0.3 0.3 0.5 0.5 0.5 FK25SM


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PDF 150ns -120V FK25SM-5 FK18SM-9 FK18SM-10 FK14SM-12 FK20SM-9 FK20SM-10 FK18SM-12 FK25SM-6 circuit diagram of UPS UPS circuit diagram CIRCUIT DIAGRAM UPS 0.5 kva inverter circuit diagram UPS design Guide CIRCUIT DIAGRAM
1998 - FK18SM-12

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING , 0V A A A W °C ­55 ~ +150 4.8 °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 , ) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE OUTPUT , 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED , ) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 REVERSE RECOVERY TIME trr (ns) 1.4 VGS =


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PDF
2006 - Not Available

Abstract: No abstract text available
Text: FK18SM-12 High-Speed Switching Use Nch Power MOS FET REJ03G1393-0200 (Previous: MEJ02G0244 , VDS = 0 V Typical value Rev.2.00 Jul 07, 2006 page 1 of 6 FK18SM-12 Electrical , Temperature Tc (°C) Drain-Source Voltage VDS (V) Rev.2.00 Jul 07, 2006 page 2 of 6 FK18SM-12 , Current ID (A) Rev.2.00 Jul 07, 2006 page 3 of 6 FK18SM-12 Capacitance vs. Drain-Source , Temperature Tch (°C) Rev.2.00 Jul 07, 2006 page 4 of 6 FK18SM-12 Breakdown Voltage vs. Channel


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PDF FK18SM-12 REJ03G1393-0200 MEJ02G0244-0101) PRSS0004ZB-A
Not Available

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ( I FK18SM-12 | S HIGH-SPEED SWITCHING USE FK18SM-12 , 247 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE ELECTRICAL , IN G A R E A 3 - 248 MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FK18SM-12 , 3 - 249 MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE C A P A C IT A , MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE 1.4 (3 < s o


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PDF FK18SM-12 150ns 57KH23
1998 - FK18SM-9

Abstract: 002 545 18 05
Text: ID (A) 50 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V PD = 250W 6V 16 12 5V 8 4 4V 4V 0 0 10 20 30 40 0 50 0 4 8 12 16 20 , = 35A 16 18A 8 9A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON , ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 40 24 16 8 0 0 4 8 12 16 20 , ) DRAIN-SOURCE VOLTAGE VDS (V) 16 VDS = 100V 12 8 200V 400V 4 0 0 20 40 60 80


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PDF FK18SM-9 150ns FK18SM-9 002 545 18 05
Not Available

Abstract: No abstract text available
Text: -10 FK14KM-10 FK14SM-10 FK18SM-10 FK20SM-10 FK7UM- 12 FK7VS- 12 FK7KM- 12 FK7SM- 12 FK10UM- 12 FK10VS- 12 FK10KM- 12 FK10SM- 12 FK14SM- 12 FK18SM-12 V d ss Electrical Characteristics V oss r DS(on). (i ! ) C|ES ·d (A


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PDF 150nS) FK16UM-5 FK16VS-5 FK16KM-5 FK16SM-5 FK20UM-5 FK20VS-5 FK20KM-5 FK20SM-5 FK25SM-5
luo24

Abstract: No abstract text available
Text: 0.4 / z ~ § w o * 0.2 ! 0 4 8 12 16 VGS (V ) 20 10-' 2 3 5 7 10° 2 3 , _¿ 1 0 4 8 12 G A T E -S O U R C E V O L T A G E 1 16 VGS (V) 20 3-194 MITSUBISHI , = 0V Id = 1m A DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 12 1.0 z U J cc


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PDF FK18SM-10 150ns 5710e luo24
2000 - 7272

Abstract: FK18SM-12 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A
Text: QJS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Single FK Series Mosfet Hermetic Module 600 Amperes/600 Volts Description: Powerex Mosfet Hermetic modules are designed for use in switching applications. All components are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management. Features: 34 FK18SM-12 chips per module One 6 gate resistor for each chip


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PDF QJS0660001 Amperes/600 FK18SM-12 -600A/ 7272 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A
Not Available

Abstract: No abstract text available
Text: 4V D 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) ce ce ZI O z < ce O 20 16 12 OUTPUT CHARACTERISTICS , bV i / J r / 4V / 0 4 8 12 16 20 DRAIN-SOURCE , i i \ i Ir -3 5 A i 1 1 1 8A -1- 9A | 0 4 8 12 16 , 1 S 1 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) ES ll , > LU O ce ZI O 12 1 1 Tch = 25° C


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PDF FK18SM-9 150ns
1998 - FK18SM-10

Abstract: No abstract text available
Text: CURRENT ID (A) PD = 250W 16 6V 12 5V 8 TC = 25°C Pulse Test 4 4V 0 0 10 20 30 40 4V 0 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V , 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE , ID (A) 24 16 8 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) VDS = , VOLTAGE VDS (V) 16 VDS = 100V 12 8 200V 400V 4 0 0 20 40 60 80 40


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PDF FK18SM-10 150ns FK18SM-10
5218a

Abstract: No abstract text available
Text: ¿52 18A - i 9A < § cc o I k -20 5 = «! UJ 0.2 12 G ATE-SO U R C E VO LTAG E , z < o c Q I 0 0 4 8 12 16 20 G ATE-SO U R C E V O LTAG E V o s (V) 3-144 A , I = ov le = m A I 1.2 tu 1 H > cc LU H 2 3 LU 2 102 7 5 Irr < 'a3 Tch = - - -


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PDF FK18SM-9 150ns 5218a
2006 - Not Available

Abstract: No abstract text available
Text: 16 6V 12 5V 20 5V 10 4V 0 0 10 20 30 40 50 8 Tc = 25°C Pulse Test 4 4V 0 0 4 8 12 16 20 , ID = 35A 0.8 24 0.6 20V 0.4 16 18A 8 9A 0 0 4 8 12 16 20 0.2 0 10­1 2 3 5 7 100 2 3 5 , Pulse Test VDS = 10V Pulse Test 24 16 Tc = 25°C 125°C 75°C 8 0 0 4 8 12 , Gate-Source Voltage VGS (V) Tch = 25°C ID = 18 A 16 VDS = 100V 12 Source Current IS (A) 40 Tc = , Tch = 25°C Tch = 150°C 2 3 3 2 101 7 5 102 7 5 3 2 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6


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PDF FK18SM-10 REJ03G1392-0200 MEJ02G0233-0101) PRSS0004ZB-A
2006 - Not Available

Abstract: No abstract text available
Text: ) 30 Drain Current ID (A) 40 16 12 5V 20 5V 10 4V 0 0 10 20 30 40 5 8 4 4V 0 0 4 8 12 16 20 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source , Test Tc = 25°C Pulse Test 32 0.8 24 ID = 35A 16 18A 9A 0 0 4 8 12 16 20 0.6 VGS = 20V , 25°C 75°C 125°C 8 0 0 4 8 12 16 20 5 7 101 2 3 5 7 102 , °C 12 8 200V 400V 20 4 10 0 0 20 40 60 80 100 0 0 0.8


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PDF FK18SM-9 REJ03G1391-0200 MEJ02G0223-0101) PRSS0004ZB-A
2006 - Not Available

Abstract: No abstract text available
Text: 16 6V 12 5V 20 5V 10 4V 0 0 10 20 30 40 50 8 Tc = 25°C Pulse Test 4 4V 0 0 4 8 12 16 20 , ID = 35A 0.8 24 0.6 20V 0.4 16 18A 8 9A 0 0 4 8 12 16 20 0.2 0 10­1 2 3 5 7 100 2 3 5 , Pulse Test VDS = 10V Pulse Test 24 16 Tc = 25°C 125°C 75°C 8 0 0 4 8 12 , Gate-Source Voltage VGS (V) Tch = 25°C ID = 18 A 16 VDS = 100V 12 Source Current IS (A) 40 Tc = , Tch = 25°C Tch = 150°C 2 3 3 2 101 7 5 102 7 5 3 2 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6


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PDF FK18SM-10 REJ03G1392-0200 MEJ02G0233-0101) PRSS0004ZB-A
2006 - fk18sm

Abstract: No abstract text available
Text: Current ID (A) 40 16 12 5V 20 5V 10 4V 0 0 10 20 30 40 5 8 4 4V 0 0 4 8 12 16 20 , 24 ID = 35A 16 18A 9A 0 0 4 8 12 16 20 0.6 VGS = 20V 10V 0.4 8 0.2 0 10­1 2 3 5 7 , 12 16 20 5 7 101 2 3 5 7 102 Gate-Source Voltage VGS (V) Drain Current ID (A , Source Current IS (A) 16 VDS = 100V 12 40 75°C Tc = 125°C 25°C 30 8 200V 400V 20 , ) 1.2 Reverce Recovery Time trr (ns) VGS = 0V ID = 1mA dis/dt = ­100A/µs VGS = 0V VDD = 250V


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PDF FK18SM-9 REJ03G1391-0200 MEJ02G0223-0101) PRSS0004ZB-A fk18sm
Not Available

Abstract: No abstract text available
Text: . 1999 MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE CE CE ZI O z < CE O 20 16 12 OUTPUT , 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CE CE ZI O z < CE O 50 , i \ V — 18A -1- 9A 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V , _t 1 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) ES LL- C/3 £ Z >■< — £ LU O O Z CE < M , ¨ 2 >°C * \ 1 lc = .tí 12 5° C j 10° 2 3 5


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PDF FK18SM-10 150ns
FS10KM12

Abstract: FS10SM16A FS20KM-5 CT40TMH FS7UM16A FS10SM18A FS18SM10 CT60AM-20 FS7UM-16A FX6KM-06
Text: ) FK18SM-10 (0.500) FK18SM-12 (0.540) FK14KM-9 FK14UM-9 FK14VS-9 FK14SM-9 (0.650) · O · O FK10KM , General Purpose Discrete IGBTs (VCES = 600V) Ic, (A) 30 75 TO-3P CT30SM- 12 - TO-3PL - CT75AM- 12 Resonant Switching Applications Product Features: Lo w V ce (SAT) Fast Turn On 1000V , Series MOSFETs (250 - 600V) 250V 300V 450V 500V 600V · FS2KM- 12 O FS2U M - 12 FS2VS- 12 (6.40) · FS3KM-9 O FS3UM-9 FS3VS-9 (3.50) · FS3KM-10 O FS3UM -10 FS3VS-10 (4.40) · FSKM- 12 O FSU M - 12 FSVS- 12


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PDF O-220S CT20VS-8 CT20VSL-8 O-220C O-220F CT20TM-8 CT20AS-8 CT20ASL-8 CT20ASJ-8 CT20VM-8 FS10KM12 FS10SM16A FS20KM-5 CT40TMH FS7UM16A FS10SM18A FS18SM10 CT60AM-20 FS7UM-16A FX6KM-06
FK10KM

Abstract: No abstract text available
Text: IB U ILT-IN HIGH SPEED DIODE POWER MOSFET FK SERIES (CONTINUED) Max. ratings Type No. FKIOUM-9 FKtOVS-9 FK10KM-9 FKIOSM-9 FK14UM-9 FK14VS-9 FK14KM-9 FK14SM-9 FK18SM-9 FK20SM-9 FKI0UM-10 FK10VS-10 FKI0KM-10 FK10SM-10 FK14UM-I0 FK14VS-10 FKI4KM-I0 FK14SM-10 FKI8SM-10 FK20SM-I0 FK7UM- 12 FKTVS- 12 FK7KM- 12 FK7SM-I2 FK10UM- 12 FKtOVS- 12 FK10KM- 12 FK10SM- 12 FK14SM- 12 FKtBSM- 12 * * 450 14 40 150 18 20 h 250 275 125 10 35 r 500 125 150 40 150 18 20 250 275 125 7 35 125 600 IO 40 150 14 250 275 0.58 0.42 0.75


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PDF FK10KM-9 FK14UM-9 FK14VS-9 FK14KM-9 FK14SM-9 FK18SM-9 FK20SM-9 FKI0UM-10 FK10VS-10 FKI0KM-10 FK10KM
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: dB 15 20 10 0 6 8 10 12 14 16 Pin (dBm) 18 20 PAE (%) PG , Pa ge 16 16 16 16 11 11 16 16 16 11 11 11 12 12 12 11 11 11 11 11 11 11 11 , -220AB TO-3P Pa ge 11 16 16 11 11 11 11 11 11 11 11 12 12 11 11 11 11 11 12 12 11 , 11 11 12 12 12 12 12 12 12 12 12 12 12 12 8 8 8 8 Pa ge 8 16 16 16 16 8 8 8 8 11 11 16 16 16 8 11 11 11 11 11 11 11 11 11 11 11 11 12 !2SK Series Type


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PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: Gate-drive VDSS voltage (V) (V) -1.8 -2.5 -4.5 -1.8 -2.5 -4.5 - 12 - 12 - 12 - 12 -20 -20 -20 -20 -30 -60 12 12 12 20 20 20 20 30 60 RDS(on) (mW)max ID (A) VGSS (V) -3 -2.5 -2 -3 -1 -2.5 -2 -1.5 -1.5 -2 3.5 3 2 1.5 3 2.5 2 1.5 3 ±8 ±8 ±8 ±8 ± 12 ± 12 ± 12 ± 12 -20/10 -20/10 ±8 ±8 ±8 ± 12 ± 12 ± 12 ± 12 -20/10 -20/10 10V - - - - , 17 Pa ge 16 16 16 16 11 11 16 16 16 11 11 11 12 12 12 11 11 11 11 11 11 11


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PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
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