The Datasheet Archive

FK10SM-10 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
FK10SM-10 FK10SM-10 ECAD Model Mitsubishi MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE Original PDF
FK10SM-10 FK10SM-10 ECAD Model Renesas Technology MITSUBISHI Nch POWER MOSFET Original PDF
FK10SM-10-E FK10SM-10-E ECAD Model Renesas Technology Transistor Mosfet N-CH 500V 10A 3 pin TO-3P Original PDF

FK10SM-10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
3170A

Abstract: FK10SM-10 500v p channel mosfet
Text: MITSUBISHI Neh POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE FK 10SM-10 OUTLINE DRAWING , MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25 C) Symbol V (BH) DSS , MITSUBISHI Neh POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT , MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE CAPACrTANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL , POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL


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PDF FK10SM-10 10SM-10 150ns 3170A FK10SM-10 500v p channel mosfet
mosfet 500v 10A

Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE FK10SM-10 Vdss , MITSUBISHI Neh POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25Â , VOLTAGE VDS (V) A MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI Neh POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING , MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE i o 103 7 5 2 102 101 SWITCHING CHARACTERISTICS (TYPICAL , MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) O O s er m


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PDF FK10SM-10 150ns mosfet 500v 10A
1998 - FK10SM-9

Abstract: No abstract text available
Text: Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 3.2 2 19.5MIN. 4.4 1.0 , Typical value Ratings 450 ±30 10 Unit V V A 30 10 30 125 ­55 ~ +150 VGS = 0V VDS = , ) trr - - ± 10 V V µA - 3 0.70 3.50 1 4 0.92 4.60 mA V V 5.5 1100 , Pulse DC 10­1 7 5 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-9 HIGH-SPEED SWITCHING USE DRAIN CURRENT ID (A) 20 10 16


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PDF FK10SM-9 150ns FK10SM-9
1998 - FK10SM-10

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE FK10SM-10 OUTLINE DRAWING , 0V A A A W °C ­55 ~ +150 4.8 °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 , .1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VGS = , ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE CAPACITANCE , FK10SM-10 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 ­50 0 50 100 150


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PDF FK10SM-10 150ns FK10SM-10
2006 - FK10SM-10

Abstract: PRSS0004ZB-A SC-65
Text: FK10SM-10 High-Speed Switching Use Nch Power MOS FET REJ03G1380-0200 (Previous: MEJ02G0228 , °C °C g Conditions VGS = 0 V VDS = 0 V Typical value FK10SM-10 Electrical , 103 Drain-Source Voltage VDS (V) FK10SM-10 Output Characteristics (Typical) Output , Current ID (A) 5 7 101 FK10SM-10 Capacitance vs. Drain-Source Voltage (Typical) Switching , ) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) FK10SM-10


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PDF FK10SM-10 REJ03G1380-0200 MEJ02G0228-0101) PRSS0004ZB-A FK10SM-10 PRSS0004ZB-A SC-65
FK10KM

Abstract: No abstract text available
Text: IB U ILT-IN HIGH SPEED DIODE POWER MOSFET FK SERIES (CONTINUED) Max. ratings Type No. FKIOUM-9 FKtOVS-9 FK10KM-9 FKIOSM-9 FK14UM-9 FK14VS-9 FK14KM-9 FK14SM-9 FK18SM-9 FK20SM-9 FKI0UM- 10 FK10VS- 10 FKI0KM- 10 FK10SM-10 FK14UM-I0 FK14VS- 10 FKI4KM-I0 FK14SM- 10 FKI8SM- 10 FK20SM-I0 FK7UM-12 FKTVS-12 FK7KM , 275 125 10 35 r 500 125 150 40 150 18 20 250 275 125 7 35 125 600 IO 40 150 14 250 275 0.58 0.42 0.75 , 2800 10 35 Etectrical characteristics (TYP.) Vgss M Ciss TYP. M AX. W trr(MAX) |n s


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PDF FK10KM-9 FK14UM-9 FK14VS-9 FK14KM-9 FK14SM-9 FK18SM-9 FK20SM-9 FKI0UM-10 FK10VS-10 FKI0KM-10 FK10KM
1998 - FK10SM-10

Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE FK10SM-10 OUTLINE DRAWING , 0V A A A W °C ­55 ~ +150 4.8 °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 , .1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VGS = , ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE CAPACITANCE , FK10SM-10 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 ­50 0 50 100 150


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PDF
2006 - Not Available

Abstract: No abstract text available
Text: FK10SM-10 High-Speed Switching Use Nch Power MOS FET REJ03G1380-0200 (Previous: MEJ02G0228 , VDS = 0 V Typical value Rev.2.00 Jul 07, 2006 page 1 of 6 FK10SM-10 Electrical , FK10SM-10 Output Characteristics (Typical) 20 VGS = 20V 10V 6V 10 Output Characteristics (Typical , page 3 of 6 FK10SM-10 Capacitance vs. Drain-Source Voltage (Typical) 2 103 7 5 3 2 102 7 5 3 2 , FK10SM-10 Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Drain-Source Breakdown Voltage V


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PDF FK10SM-10 REJ03G1380-0200 MEJ02G0228-0101) PRSS0004ZB-A
1998 - FK10SM-12

Abstract: No abstract text available
Text: Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 3.2 2 19.5MIN. 4.4 1.0 , temperature Weight Typical value Ratings Unit 600 V ±30 10 30 10 30 V A A A A , ±25V, VDS = 0V 600 ±30 - - - - - - ± 10 V V µA VDS = 600V, VGS = 0V ID = , °C Single Pulse DC 7 5 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb , 20V 10V PD= 6V 150W 10 16 TC = 25°C Pulse Test 12 5V 8 4 DRAIN CURRENT ID (A


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PDF
1998 - FK10SM-9

Abstract: No abstract text available
Text: Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 3.2 2 19.5MIN. 4.4 1.0 , Typical value Ratings 450 ±30 10 Unit V V A 30 10 30 125 ­55 ~ +150 VGS = 0V VDS = , ) trr - - ± 10 V V µA - 3 0.70 3.50 1 4 0.92 4.60 mA V V 5.5 1100 , Pulse DC 10­1 7 5 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-9 HIGH-SPEED SWITCHING USE DRAIN CURRENT ID (A) 20 10 16


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1998 - FK10SM-12

Abstract: 200v 10A mosfet
Text: Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 3.2 2 19.5MIN. 4.4 1.0 , temperature Weight Typical value Ratings Unit 600 V ±30 10 30 10 30 V A A A A , ±25V, VDS = 0V 600 ±30 - - - - - - ± 10 V V µA VDS = 600V, VGS = 0V ID = , °C Single Pulse DC 7 5 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb , 20V 10V PD= 6V 150W 10 16 TC = 25°C Pulse Test 12 5V 8 4 DRAIN CURRENT ID (A


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PDF FK10SM-12 150ns FK10SM-12 200v 10A mosfet
Not Available

Abstract: No abstract text available
Text: -9 FK14VS-9 FK14KM-9 FK14SM-9 FK18SM-9 FK20SM-9 FK10UM- 10 FK10VS- 10 FK10KM- 10 FK10SM-10 FK14UM- 10 FK14VS- 10 FK14KM- 10 FK14SM- 10 FK18SM- 10 FK20SM- 10 FK7UM-12 FK7VS-12 FK7KM-12 FK7SM-12 FK10UM-12 FK10VS-12 FK10KM , ) 16 16 16 16 20 20 20 20 25 30 16 16 16 16 20 20 20 20 25 30 10 10 10 10 14 14 14 14 18 20 10 10 10 10 14 14 14 14 18 20 7 7 7 7 10 10 10 10 14 18 Pd (W) 125 125 35 125 150 150 40 150 250 275 125 125


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PDF 150nS) FK16UM-5 FK16VS-5 FK16KM-5 FK16SM-5 FK20UM-5 FK20VS-5 FK20KM-5 FK20SM-5 FK25SM-5
Not Available

Abstract: No abstract text available
Text: dss V g ss Id Idm Is ISM Pd Tch Tstg - (Tc = 25 C; Conditions VGS = Ratings 600 ±30 10 30 10 30 , - Max. - - ± 10 1 4 1.18 5.90 - - - - - - - - 2.0 0.83 150 Unit V V MA mA V 600 ±30 , 5V IK cn (X D O < CC Q / / 0 r 1 f / O z ' ' 3 < D cc 4V 10 20 , 2 3 VDS 10 " ' 2 3 5 7 IOC 2 3 Id 5 7 1C1 DRA iN -SO U R CE VOLTAGE , - y tr r I- > $ z > z O 1.0 CC >Ui O o 2 101 7 £ T CC 3 O o o a


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PDF FK10SM-12 150ns
2006 - FK10SM-9

Abstract: PRSS0004ZB-A SC-65
Text: -0101) Rev.2.00 Jul 07, 2006 Features · · · · VDSS : 450 V rDS (ON) (max) : 0.92 ID : 10 A , PD Tch Tstg - ±30 10 30 10 30 125 ­ 55 to +150 ­ 55 to +150 4.8 V A A A A W , - - 3 0.70 3.50 5.5 1100 130 20 20 30 95 35 1.5 - - Max. - - ± 10 1 4 , ±25 V, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 5A, VGS = 10 V


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PDF FK10SM-9 REJ03G1379-0200 MEJ02G0218-0101) PRSS0004ZB-A FK10SM-9 PRSS0004ZB-A SC-65
Not Available

Abstract: No abstract text available
Text: Drain current 10 A idm Drain current (Pulsed) 30 A Is Source current 10 A Ism Source current (Pulsed , Gate-source leakage current vgs = ±25v, vds = ov — — ± 10 jiA I dss Drain-source leakage current vds = , 10-1 7 5 — Tc = 25°C ■Single Pulse tw= 10 ^s 100^ 1 ms 10ms DC 10° 2 3 5 7101 2 3 5 7102 2 3 5 , -12 HIGH-SPEED SWITCHING USE lu ce ce ZI O z < ce O 10 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20 V —I—l—lâ , / * *» 4V / r 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) lu H w ? z o O rn lu o O


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PDF FK10SM-12 FK1OSM-12 150ns D-250V 57KH23 571Q1
Not Available

Abstract: No abstract text available
Text: .10A Integrated Fast Recovery Diode (MAX.).150ns OUTLINE DRAWING 15.9MAX. 3.2 ifTTP 1.0 Dimensions in mm , ±30 V Id Drain current 10 A IDM Drain current (Pulsed) 30 A Is Source current 10 A Ism Source , €” V igss Gate-source leakage current vgs = ±25v, vds = 0 v — — ± 10 jiA I dss Drain-source , o 10 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V >— \ 3d = 12 5W h , / 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) lu I- _ « z z o O m LU Q O > "Ph ig ce -> Q 40 32 24


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PDF 150ns
Not Available

Abstract: No abstract text available
Text: Typical value V g s = OV V os = OV Conditions Ratings 450 ±30 10 30 10 30 125 - 5 5 ~ +150 - 5 5 - +150 , voltage (Teh = 25 C) Test conditions 10 = 1mA, VGS = OV lG = ±100|iA, VDS = 0V VGS = ±25V, VDS = OV VDS , 1100 130 20 20 30 95 ± 10 1 4 0.92 4.60 - - - - - - - - 2.0 1.00 150 mA V Q V S pF pF pF , V < / 10 20 30 D RAIN-SO UR C E V O LTAG E J / Q n 1 I §ß 0 0 40 50 , S 1.6 \ GS 1.2 10V 5 » "1 n 10 24 ¡5 16 rJ ° e LU I d = 15 A O uj §LU


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PDF 150ns 5713e
2006 - FK10SM-12

Abstract: PRSS0004ZB-A SC-65
Text: -0101) Rev.2.00 Jul 07, 2006 Features · · · · VDSS : 600 V rDS (ON) (max) : 1.18 ID : 10 A , PD Tch Tstg - ±30 10 30 10 30 150 ­ 55 to +150 ­ 55 to +150 4.8 V A A A A W , - - 3 0.90 4.50 7.0 1500 170 25 25 35 130 45 1.5 - - Max. - - ± 10 1 4 , ±25 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 5A, VGS = 10 V


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PDF FK10SM-12 REJ03G1381-0200 MEJ02G0242-0101) PRSS0004ZB-A FK10SM-12 PRSS0004ZB-A SC-65
2006 - Not Available

Abstract: No abstract text available
Text: -0101) Rev.2.00 Jul 07, 2006 Features · · · · VDSS : 600 V rDS (ON) (max) : 1.18 ID : 10 A Integrated , 600 ±30 10 30 10 30 150 ­ 55 to +150 ­ 55 to +150 4.8 Unit V V A A A A W °C °C g Conditions VGS = 0 V , Max. - - ± 10 1 4 1.18 5.90 - - - - - - - - 2.0 0.83 150 Unit V V µA mA V V S pF pF pF ns ns , VDS = 600 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 5A, VGS = 10 V, RGEN = RGS = 50 IS = 5 A


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PDF FK10SM-12 REJ03G1381-0200 MEJ02G0242-0101) PRSS0004ZB-A
2006 - Not Available

Abstract: No abstract text available
Text: -0101) Rev.2.00 Jul 07, 2006 Features · · · · VDSS : 450 V rDS (ON) (max) : 0.92 ID : 10 A Integrated , 450 ±30 10 30 10 30 125 ­ 55 to +150 ­ 55 to +150 4.8 Unit V V A A A A W °C °C g Conditions VGS = 0 V , Max. - - ± 10 1 4 0.92 4.60 - - - - - - - - 2.0 1.00 150 Unit V V µA mA V V S pF pF pF ns ns , VDS = 450 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 5A, VGS = 10 V, RGEN = RGS = 50 IS = 5 A


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PDF FK10SM-9 REJ03G1379-0200 MEJ02G0218-0101) PRSS0004ZB-A
FS10KM12

Abstract: FS10SM16A FS20KM-5 CT40TMH FS7UM16A FS10SM18A FS18SM10 CT60AM-20 FS7UM-16A FX6KM-06
Text: FK10UM- 10 FK10VS- 10 FK10SM-10 (1.130) FK14KM- 10 FK14UM- 10 FK14VS- 10 FK14SM- 10 (0.800) · O FK10KM , -2 FS5VSJ-2 (0.40) (0.220) O · O 10 FS10AS-03 FS10KM-03 FS10UM-03 FS10VS-03 (95m fi) 0 FS10AS , -3 FS30SM-3 (92mO) FS50KM-3 FS50UM-3 FS50VS-3 FS50SM-3 (31 mO) 10 FS10ASJ-03 FS10KMJ-03 FS10UMJ , -3 FS30SMH-3 (87mO) FS02*H-2 FS02"H-2 (7.60) t 30V 60V 10 0 V 150V (a) Driver Voltage-10V *D (A ) \ V d s S -30V -60V - 10 0 V -150 V AFS01*H-3 FS01*H-3 (130) t -0.1 A AFX 01*-06 FX01


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PDF O-220S CT20VS-8 CT20VSL-8 O-220C O-220F CT20TM-8 CT20AS-8 CT20ASL-8 CT20ASJ-8 CT20VM-8 FS10KM12 FS10SM16A FS20KM-5 CT40TMH FS7UM16A FS10SM18A FS18SM10 CT60AM-20 FS7UM-16A FX6KM-06
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: ···································································· 9 Power Transistors General Amplification ················································ 10 General Switching ····················································· 10 Power MOS FET General , ±12 ±12 ±12 -20/ 10 -20/ 10 ±8 ±8 ±8 ±12 ±12 ±12 ±12 -20/ 10 -20/ 10 10V - - - - , Pa ge 6 6 10 10 6 6 10 6 6 10 6 10 10 10 10 10 10 6 6 6 6 6 10 6 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 6 6 Pa ge 6 6 7 7 7 6 6 6 6 6 6 6 6


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PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: General Amplification ········································ 10 General Switching·············································· 10 , dB 15 20 10 0 6 8 10 12 14 16 Pin (dBm) 18 20 PAE (%) PG , 6 Pa ge 6 6 10 10 6 6 6 6 6 10 6 6 6 10 6 10 10 10 10 10 10 7 7 7 7 7 10 7 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 6 6 Pa ge 6 7 6 7 7 7 6 6 7 6 6 6 7 7 7 6 6 10 6 6 7 7 6 !2SC Series Type No. 2308 2309 2310 2396


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PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: C 5 1 68 149 2 S C 5 1 69 103 2 S C 5 1 7 0 103 2 SC5209 103 2 S C 5 2 10 149 2SC5211 103 2 S C 5 2 , 12PM - 8, 12 150 BCR16A - 8, 10 150 BCR16B - 8, 10 150 BCR16C - 8, 10 150 BCR16CM - 8, 12 149 BCR16CS - 8,12 103 BCR16E -8, 10 149 BCR16HM - 8, 12 149 B CR16LM - 8, 12 103 BCR 16PM - 8, 12 150 BCR 1AM - 8, 12 153 BCR20A - 8, 10 153 BCR20AM - 8, 12 153 BCR20B -8. 10 153 BCR20C - 8, 10 153 BCR20E -8, 10 153 BCR25A - 8 ,1 0 153 BCR25B - 8, 10 153 BCR25LM - 8L, 12L 153 BCR30AM - 8, 12 153:BCR30GM - 8, 12 153


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PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
2002 - mt3514

Abstract: mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


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PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
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