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National Semiconductor Corporation
FJT1100 BULK / SEC PKG FJT1100 ECAD Model
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FJT1100 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
FJT1100 FJT1100 ECAD Model Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
FJT1100 FJT1100 ECAD Model Fairchild Semiconductor Ultra Low Leakage Diodes Scan PDF
FJT1100 FJT1100 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
FJT1100 FJT1100 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
FJT1100 FJT1100 ECAD Model National Semiconductor Silicon Single Junction Diodes Scan PDF
FJT1100 FJT1100 ECAD Model National Semiconductor Silicon Single Junction Diodes Scan PDF
FJT1100 FJT1100 ECAD Model National Semiconductor Low Leakage Diodes Scan PDF

FJT1100 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FJT1100

Abstract: FJT1101 BV20
Text: /F JT1101 of Ultra Low Lfeakage Diodes • Ir. . 1.0 pA (MAX) @ 5V ( FJT1100 ) • BV. 20 V (MIN) ( FJT1100 ) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperature Storage Temperature Range Maximum Junction , Voltage FJTIfOO FJT1101 If Continuous Forward Current PACKAGES FJT1100 FJT1101 DO-7 DO-7 -55"C to , Voltage FJT1100 30 V IR = 5.0 pA FJT1101 20 V IR = 5.0 nA |R Reverse Current FJT1100 1.0 pA Vr = , FJT1100 1.05 V IF - 50 mA FJT1101 1.10 V lp = 50 mA 'C Capacitance FJT1100 1.5 PF Vr = 0, f = 1MHz


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PDF 34tTb7 JT1100/F JT1101 FJT1100) FJT1101 FJT1100 FJT1101 BV20
fjt1100

Abstract: No abstract text available
Text: I nternational S em ico nducto r , I nc . ULTRA LOW LEAKAGE DIODES DIFFUSED SILICON PLANAR FJT1100 and FJT1101 ABSOLUTE MAXIMUM RATINGS f SYM BOL vR V , lo R e c tifie d C H A R A C T E R IS T IC P e a k In ve rse V o lta g e FJT 11 0 0 FJT1101 C u rre n t (A v e ra g e ) VALUE 25 15 1 , FJT1100 F JT1101 B re a k d o w n V o lta g e FJT1100 F JT1101 R e v e rs e C u rre n t FJT1100 F J T 1 , c, V C a p a c ita n c e FJT1100 F J T 1 101 f= 1 .0 M H z, V , = 0 V f= 1 .0 M H z, V


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PDF FJT1100 FJT1101 FJT1101 DO-35 FJT1100 T00037Ô
Not Available

Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS FJT1100 , FJT1101 ULTRA LOW LEAKAGE DIODES IR = 1.0 pA (max) @ 5V ( FJT1100 ) BV = 20 V (min) (FJT1101) MAXIMUM RATINGS Characteristics Value Storage temperature , factor (from 25°C) 250 mW 1.67 mW/°C Working inverse voltage FJT1100 FJT1101 25V 15V , otherwise noted) Symbol BV Characteristics Breakdown voltage Min FJT1100 FJT1101 FJT1100 Max , VR = 15V 30 20 IR Reverse current VF Forward voltage FJT1100 FJT1101 1.05


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PDF FJT1100, FJT1101 FJT1100) FJT1101) FJT1100
FJT1

Abstract: FJT1100 1N456A FJT1102
Text: 0.92 1.0 1.05 1.1 6 1M FDH3595 DO-35 150 1 125 8 1M FJT1100 FJT1101


OCR Scan
PDF 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A FDH300 DO-35 FJT1 FJT1100 FJT1102
do-35

Abstract: FAIRCHILD 1N459A 1N4009 1N459 1N485B fjt1100 1N625 FDH300 FDH666 FDH999
Text: 25 , 60 1.0 100 — DO-35 20 1N482B 40 25 36 1.0 100 — DO-35 21 FJT1100 30 0.001 5.0 1.05


OCR Scan
PDF FDH666 DO-35 1N44S0 1N4009 1N625 FDH999 do-35 FAIRCHILD 1N459A 1N459 1N485B fjt1100 FDH300
1N4848

Abstract: 1N4868 1N4828 1N458A 1N458 1N457A 1N456A 1N456 1N4858 low leakage diodes
Text: 1.05 1.08 1.15 50 100 150 200 250 300 6.0 D2 FJT1100 DO-7 30 0.001 0.010 5.0 15.0 1.05 50 1.5 D6


OCR Scan
PDF fa501J T-01-01 1N456 DO-35 1N456A 1N457A 1N458 1N4848 1N4868 1N4828 1N458A 1N4858 low leakage diodes
FD333

Abstract: JAN1N486B FJT1100
Text: JAN 1N483A 1N483B 1N483B JAN 1N483B JAN TX 1N890 1N457 1N457 JAN 1N457A 1N482A 1N482B FJT1100


OCR Scan
PDF 1N486 1N486A 1N486B 1N459 1N459A 1N485A 1N485B FD333 JAN1N486B FJT1100
1N456

Abstract: 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000
Text: 1.05 1.08 1.15 50 100 150 200 250 300 6.0 D2 FJT1100 DO-7 30 0.001 0.010 5.0 15.0 1.05 50 1.5 D6


OCR Scan
PDF fa5Q1130 0037GQ1 1N456 DO-35 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000
1N459A

Abstract: fjt1101 FJT1102 1N456A 1N459 1N458A 1N458 1N457A 1N457 1N456
Text: -35 150 1 125 0.52 0.60 0.65 0.75 0.79 0.83 0.68 0.76 0.80 0.89 0.92 1.0 1 5 10 50 100 200 8 1M FJT1100


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PDF 1N456 DO-35 1N456A 1N457 1N457A 1N458 1N459A fjt1101 FJT1102 1N459 1N458A
BAS 20 SOT23

Abstract: BAW62 SOT23 1s920 1n4376 MMBD1201 3BT SOT-23 FDLL4448 FDLL4148 1S921 1N916
Text: 1N456A 25 1.0 100 DO-35 FD700 50 1.1 50 0.70 DO-7 FJT1100 0.001 1.05 10 DO-7 MMBD1701 50 1.1 50


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PDF 1N916 DO-35 1N916B 1S921 FDLL4148 LL-34* FDLL4448 BAS 20 SOT23 BAW62 SOT23 1s920 1n4376 MMBD1201 3BT SOT-23
1S920

Abstract: FDLL914 FDLL4448 FDLL4148 D0-35 1S921 1N916B 1N916 MMB0914 BAY71
Text: 1N456A 25 1.0 100 DO-35 FD700 50 1.1 50 0.70 DO-7 FJT1100 0.001 1.05 10 DO-7 MMBD1701 50 1.1 50


OCR Scan
PDF bS0113G 1N916 D0-35 1N916B DO-35 1S921 FDLL4148 LL-34* FDLL4448 1S920 FDLL914 D0-35 MMB0914 BAY71
BA216

Abstract: fdh900 FDH666 FDH300 1N625 1N486B 1N485B 1N459A 1N459 BA218
Text: 25 , 60 1.0 100 — DO-35 20 1N482B 40 25 36 1.0 100 — DO-35 21 FJT1100 30 0.001 5.0 1.05


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PDF FDH666 DO-35 1N44S0 1N4009 1N625 FDH999 BA216 fdh900 FDH300 1N486B 1N485B 1N459A 1N459 BA218
BD1501

Abstract: No abstract text available
Text: FD 700 50 1.1 50 1M 3064 100 1 .0 10 4 .0 D O -3 5 FJT1100 0 .0 0 1


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PDF 1S922 BAS20 BAX16 H300A O-236AB r0-236 LL-34 O-236 DO-35 BD1501
FJT1100

Abstract: DO-41 package 1N4148 FJT1101 1N463 DO-41 DO-35 DO-7
Text: 0.68 0.76 0.80 0.89 0.92 1.0 1 5 10 50 100 200 8 1M FJT1100 DO-7 30


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PDF 1N914 DO-35 1N914A 1N914B 1N916 1N916A FJT1100 DO-41 package 1N4148 FJT1101 1N463 DO-41 DO-35 DO-7
1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: FDSO1503 FDSO1504 FDSO1505 FDSO1701 FDSO1703 FDSO1704 FDSO1705 FDSO4148 FDSO914 FJT1100 FJT1101 , MMBD1505 MMBD1701 MMBD1703 MMBD1704 MMBD1705 MMBD4148 MMBD914 FJT1100 FJT1101 FJT1102 MMBD1205


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PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
2007 - MAX975

Abstract: MAX977
Text: low-leakage (<1nA) diode, such as National’s FJT1100 (Figure 3). 15nA leakage typically results in 10


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PDF MAX975/MAX977 MAX975/MAX977 MAX975 MAX977
1996 - AM deMODULATOR circuit

Abstract: switch mode power supply MAX977 19-1141 MAX975 dual photodiode MAX975EUA TLP 498 MAX977EEE MAX977ESD
Text: isolated with a low-leakage (<1nA) diode, such as National's FJT1100 (Figure 3). 15nA leakage typically


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PDF MAX975/MAX977 1-0055A AM deMODULATOR circuit switch mode power supply MAX977 19-1141 MAX975 dual photodiode MAX975EUA TLP 498 MAX977EEE MAX977ESD
1998 - AM deMODULATOR circuit

Abstract: MAX975 MAX977 MAX975ESA MAX975EUA MAX977EEE MAX977ESD
Text: (<1nA) diode, such as National's FJT1100 (Figure 3). 15nA leakage typically results in 10% error. The


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PDF MAX975/MAX977 MAX975/MAX977 AM deMODULATOR circuit MAX975 MAX977 MAX975ESA MAX975EUA MAX977EEE MAX977ESD
2007 - auo 002

Abstract: MAX975 MAX977 E16-1 MAX975ESA MAX975EUA-T MAX977EEE MAX977ESD AM deMODULATOR circuit
Text: isolated with a low-leakage (<1nA) diode, such as National's FJT1100 (Figure 3). 15nA leakage typically


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PDF MAX975/MAX977 MAX975/MAX977 auo 002 MAX975 MAX977 E16-1 MAX975ESA MAX975EUA-T MAX977EEE MAX977ESD AM deMODULATOR circuit
MAX977

Abstract: No abstract text available
Text: e (< 1nA ) d io d e , s u ch as N a tio n al's FJT1100 (F ig u re 3). 15nA le a ka ge ty p ic a lly


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PDF MAX975) QSOP-16 MAX977) 975/M MAX977
MAX977

Abstract: No abstract text available
Text: as National's FJT1100 (Figure 3). 15nA leakage typically results in 10% error. The MAX977 has


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PDF MAX975/MAX977 30QiA. MAX977
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
1n52408

Abstract: 1N52428 zener SFC2311 54175 10116dc IRS 9530 transistor 21L02A 78M12HM fpa100 100k 5 10105DC
Text: 25 @ 60 1.0 18 1N482B 40 25 @ 30 @ @ 25 19 FJT1100 35


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PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 54175 10116dc IRS 9530 transistor 21L02A 78M12HM fpa100 100k 5 10105DC
100414DC

Abstract: 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB FSA2501 fairchild rtl
Text: No file text available


OCR Scan
PDF 262Bramley orporation/464 962-5011/TWX 19-PIN 100414DC 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB FSA2501 fairchild rtl
WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V BSY95A transistor 2N2359A bf197p 2N3642 2N4286 93L38
Text: No file text available


OCR Scan
PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V BSY95A transistor 2N2359A bf197p 2N3642 2N4286 93L38
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