The Datasheet Archive

FHX35LG datasheet (9)

Part Manufacturer Description Type PDF
FHX35LG Eudyna Devices TRANS JFET 4V 4LG Original PDF
FHX35LG Fujitsu Low Noise HEMT Original PDF
FHX35LG Fujitsu FET, P Channel, ID 0.085 A Original PDF
FHX35LG Others High Frequency Device Data Book (Japanese) Scan PDF
FHX35LG Others FET Data Book Scan PDF
FHX35LG002 Eudyna Devices TRANS JFET 6V 4LG Original PDF
FHX35LG/002 Fujitsu Low Noise HEMT Original PDF
FHX35LG/002-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF
FHX35LG-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF

FHX35LG Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - FHX35LP

Abstract: FHX35LG fujitsu hemt
Text: FHX35LG /LP Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=12GHz , Reliability Cost Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG /LP is a High Electron , Drain-Source Voltage Gate-Source Voltage Total Power Dissipation FHX35LG Storage Temperature Channel Temperature Rating 4.0 -3.0 290 -65 to +175 FHX35LP FHX35LG ¡C -65 to +150 ¡C 175 ¡C , FHX35LG /LP Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200


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PDF FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt
2004 - Not Available

Abstract: No abstract text available
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B (Typ.)@f=12GHz • High , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT NF , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


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PDF FHX35LG 12GHz FHX35LG 2-18GHz the88
2004 - FHX35

Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Text: FHX35X/002 FHX35LG /002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG /002 packaged , 20 nA Gate-Source Capacitance CGS FHX35X/002 - 0.27 - FHX35LG /002 - , =10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X/002 FHX35LG /002 Low Noise HEMT Fig. 2 , -0.8V 0.5 FHX35LG /002 0.4 0.3 FHX35X/002 -1.0V 0 1 2 0.2 3 Drain-source , FHX35X/002 FHX35LG /002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to


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PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 Co4888 FHX35 eudyna FHX35LG hemt low noise die fujitsu gaas fet
fujitsu hemt

Abstract: FHX35LG low noise hemt transistor LOW HEMT
Text: FHX35X/002 FHX35LG /002 FEATURES · · · · · High Transconductance Low Leakage Current Low Gate , optical receiver in high speed application. DESCRIPTION The FHX35X/002 Chip and FHX35LG /002 packaged , /002 FHX35LG /002 ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage , itiA V q S=-2V V d S=3V FHX35X/002 FHX35LG /002 Min. 15 45 -0.2 Limits Min. 40 60 -1.0 10 0.27 , ts FHX35X/002 FHX35LG /002 Low Noise HEM T Fig. 1 Drain Current vs. Drain-Source Voltage


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PDF FHX35X/002 FHX35LG/002 FHX35LG/002 35LG/002 35X/0 HX35LGI002 fujitsu hemt FHX35LG low noise hemt transistor LOW HEMT
2000 - low noise hemt

Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain , °C/W 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July 1999 1 FHX35LG Super , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , Ambient Temperature (°K) Input Power (dBm) 3 FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE


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PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
2004 - FHX35LP

Abstract: FHX35LG WG 924 FHX35
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) 1 Unit mA mS V V FHX35LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


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PDF FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35
FHX35LG

Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG /LP is a High Electron Mobility , performance. FHX35LG /LP Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta , Dissipation Pt* 290 mW Storage Temperature FHX35LG Tstg -65 to+175 °C FHX35LP -65 to+150 °C Channel Temperature FHX35LG TCh 175 °C FHX35LP 150 °C *Note: Mounted on Al203 board (30 x 30 x 0.65mm) Fujitsu , 1999 Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) FUJITSU FHX35LG /LP ^^^^^^


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PDF 12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
1998 - low noise hemt

Abstract: lg s12 WG 924 FHX35LG PT 4304 a transistor fujitsu hemt
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) 1 Unit mA mS V V FHX35LG Super , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


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PDF FHX35LG 12GHz FHX35LG 2-18GHz FCSI0598M200 low noise hemt lg s12 WG 924 PT 4304 a transistor fujitsu hemt
1998 - FHX35LG

Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
Text: FHX35X/002 FHX35LG /002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG /002 packaged , FHX35LG /002 - 0.47 - - 0.035 - Item Symbol Conditions IDSS , VDS=3V IDS=10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X/002 FHX35LG /002 Low Noise , 30 -0.4V 20 -0.6V 10 -0.8V 0.5 FHX35LG /002 0.4 0.3 FHX35X/002 -1.0V 0 1 2 , Gate-Source Voltage (V) 2 FHX35X/002 FHX35LG /002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs


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PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die
fhx35lg

Abstract: No abstract text available
Text: FHX35LG Low Noise H E M l ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on AI2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable , (dB) rv> CO ß° O 0) w < (0 D (/> Associated Gain (dB) IO FHX35LG Low Noise H L M , FHX35LG Low Noise H E M T S-PARAMETERS FREQUENCY (MHZ) 100 500 1000 2000 3000 4000 5000 6000 7000


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PDF FHX35LG 4000Q. fhx35lg
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: FLR016FH FLR026FH none Case Style 'FH" FHC40LG FHX04LG FHX05LG FHX06LG FHX13LG FHX14LG FHX35LG , stripes and dots given below. Marking Format Part Number Color FHX13LG FHX04LG FHX35LG FHC40LG


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PDF
FLC081XP

Abstract: FLC253MH-8 FLC253MH-6 FLC091WF FLK012WF FLC053WG FLC103WG FLK022WG FHX15FA FLK052WG
Text: GaAsHEMT N D 3.5 DS -3 180« 10m 60m 2 -0.1 -1.5 2 10» 35» 50m 2 1» FHX35LG a±i§ X-Band LN A , =8. 5dBmin/10dBtyp f=12GHz 263 GSDS FHX35LG 1. 2 1. 6 12G Ga=8. 5dBmin/10dBtyp f=12GHz fiT FHX35X


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PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLK012WF FLC053WG FLC103WG FLK022WG FHX15FA FLK052WG
FSX52WF

Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG * FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs


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PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
FHX35

Abstract: FHX35LG 12GHZ FHX06FA FHX15FA FHX16FA
Text: 11.50 VDS=2V, lDS=10mA, 12GHZ • FHX35LG ®É : SHF «¡Sftií m : mmmmuo ¡stMm. «ig


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PDF FHX06FA 12GHz 10raA. FHX15FA 10IIA 10raA MFGI100 FHX35 FHX35LG 12GHZ FHX06FA FHX16FA
FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: =4 GHz 2) FHX35LG APPLICATION 12 GHz MATCHING NEETWORK -1.37 0.64 1.89 0.64 INPUT


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PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
FSX51

Abstract: fld3c2pj FMM362HE FLD5F6CX Fujitsu FLD5F6CX FRM5W231DR FLD148G3NL 382CG FLD150F5CN fld3f
Text: q s =3V lDS=20mA VGS=-2V VDS=3V lDS=20mA VDS=3V lD S = 1 0 m A FHX35LG /002 60 (VDS=2V) 60


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PDF 14-pin 4001EH 4002EH 4004EK 622Mb/s 4005EK FSX51 fld3c2pj FMM362HE FLD5F6CX Fujitsu FLD5F6CX FRM5W231DR FLD148G3NL 382CG FLD150F5CN fld3f
MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: @ 12 GHz Fujitsu FHX35LG NE4210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS


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PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
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