The Datasheet Archive

SF Impression Pixel

Search Stock (1)

  You can filter table by choosing multiple options from dropdownShowing 1 results of 1
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
FHX35X FUJITSU Limited Bristol Electronics 36,442 - -

No Results Found

FHX35 datasheet (17)

Part Manufacturer Description Type PDF
FHX35LG Eudyna Devices TRANS JFET 4V 4LG Original PDF
FHX35LG Fujitsu Low Noise HEMT Original PDF
FHX35LG Fujitsu FET, P Channel, ID 0.085 A Original PDF
FHX35LG Others High Frequency Device Data Book (Japanese) Scan PDF
FHX35LG Others FET Data Book Scan PDF
FHX35LG002 Eudyna Devices TRANS JFET 6V 4LG Original PDF
FHX35LG/002 Fujitsu Low Noise HEMT Original PDF
FHX35LG/002-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF
FHX35LG-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF
FHX35LP Fujitsu Super Low Noise HEMT Original PDF
FHX35X Fujitsu FET, P Channel, ID 0.085 A Original PDF
FHX35X Fujitsu Low Noise HEMT Original PDF
FHX35X Others FET Data Book Scan PDF
FHX35X002 Eudyna Devices TRANS JFET 6V 4LG Original PDF
FHX35X/002 Fujitsu Low Noise HEMT Original PDF
FHX35X/002-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF
FHX35X-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF

FHX35 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
fujitsu gaas fet

Abstract: S3V 03 S3V 05 FSX51 FHX35 fsx51x
Text: LIGHTWAVE COM PON EN TS & M OD ULES GaAs FETs and HEMTs FOR RECEIVER FRONT ENDS 9m (mS) ·g s o (nA) Cgs (PF) CGD (PF) Part Number V d S=3V lDS=20mA V q S=-2V V d S=3V lDS=20mA VDS=3V lDS=10mA Notes FHX35 LG/002 FHX35X /002 FSX51 LG/001 60 (V d S=2V) 60 (VDS=2V) 10 0.47 0.035 Packaged HEMT 10 0.27 0.035 HEMT Chip 33 20 0.5 0.03 Packaged GaAs FET FSX51X/011 33 20 0.3 0.03 GaAs FET Chip FUJITSU 1997 Lightwave Components &


OCR Scan
PDF FHX35 LG/002 FHX35X/002 FSX51 LG/001 FSX51X/011 fujitsu gaas fet S3V 03 S3V 05 fsx51x
FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 FLK202 "FLL105" FLL-300-1
Text: 0.06 0.04 Q_ o o 1 3 Q. 3 FHC40 15 FHX35 0.02 FHX13/14/04/05/06 10 FHR02 3 4


OCR Scan
PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 FLK202 "FLL105" FLL-300-1
FHX34X

Abstract: FHX13x
Text: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics (Ta = 25 C) Part Number NF TYP. (dB) 0.75 0.9 1.1 0.45 0.55 0.9 1.2 0.55 1.0 0.75 Gas TYP. (dB) 10.5 10.5 10.5 13.0 13.0 10.0 10.0 12.0 9.0 10.0 f (GHz) 12 12 12 12 12 12 12 12 18 18 Vd s m 2 2 2 2 2 3 3 2 2 2 id s (mA) 10 10 10 10 10 10 10 10 10 Frequency Band FHX04X FHXQ5X FHX06X FHX13X FHX14X FHX34X FHX35X FHX45X FHR02X FHR20X X/Ku K 5 FUJITSU Short Form 1 M icrowave Semiconductor


OCR Scan
PDF FHX04X FHX06X FHX13X FHX14X FHX34X FHX35X FHX45X FHR02X FHR20X
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: FLR016FH FLR026FH none Case Style 'FH" FHC40LG FHX04LG FHX05LG FHX06LG FHX13LG FHX14LG FHX35LG , stripes and dots given below. Marking Format Part Number Color FHX13LG FHX04LG FHX35LG FHC40LG


OCR Scan
PDF
1998 - high frequency transistor ga as fet

Abstract: GaAs FET HEMT Chips fujitsu hemt
Text: FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High , Gate Drain Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended for , Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX35X Associated , FHX35X GaAs FET & HEMT Chips POWER DERATING CURVE 350 Total Power Dissipation (W) 300 250 200 150 100 , 20 30 Drain Current (mA) FHX35X NOISE PARAMETERS VDS=3V, IDS=10mA Freq. (GHz) 2 4 6 8 10 12 14


Original
PDF FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 high frequency transistor ga as fet GaAs FET HEMT Chips fujitsu hemt
2004 - Not Available

Abstract: No abstract text available
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B (Typ.)@f=12GHz • High , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT NF , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


Original
PDF FHX35LG 12GHz FHX35LG 2-18GHz the88
MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: @ 12 GHz Fujitsu FHX35LG NE4210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant Fujitsu FHX35X NE321000 Closest equivalent Super Low Noise Pseudomorphic HJ FET Fujitsu


Original
PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
1998 - FHX35LP

Abstract: FHX35LG fujitsu hemt
Text: Drain-Source Voltage Gate-Source Voltage Total Power Dissipation FHX35LG Storage Temperature Channel Temperature Rating 4.0 -3.0 290 -65 to +175 FHX35LP FHX35LG ¡C -65 to +150 ¡C 175 ¡C 150 Tstg Unit V V mW ¡C Tch FHX35LP *Note: Mounted on Al2O3 board (30 x 30 x , FHX35LG /LP Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=12GHz , Reliability Cost Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG /LP is a High Electron


Original
PDF FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt
2000 - low noise hemt

Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain , °C/W 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July 1999 1 FHX35LG Super , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , Ambient Temperature (°K) Input Power (dBm) 3 FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE


Original
PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
Not Available

Abstract: No abstract text available
Text: FHX35X Item GaAs FET & HEMT Chips Symbol IDSS 9m ELECTRICAL C H A R A C T E R ISE CS (Ambient Temperature Ta=25° C) Test Conditions VDS =2V, V q s = OV VDS = 2V, Id s = 10mA VDS = 2V, Id s = , Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX35X vp VGSO NF Gas Associated Gain , ) FHX35X NOISE PARAMETERS V d S = 3 V , lDS=10mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 ropt (MAG , GaAs F ET & HEM T Chips FHX35X FREQUENCY (MHZ) 100 500 1000 2000 3000 4000 5000 6000 7000 8000


OCR Scan
PDF FHX35X -10fiA 12GHz 10pcs. FHX35X
fujitsu hemt

Abstract: FHX35LG low noise hemt transistor LOW HEMT
Text: FHX35X /002 FHX35LG /002 FEATURES · · · · · High Transconductance Low Leakage Current Low Gate , optical receiver in high speed application. DESCRIPTION The FHX35X /002 Chip and FHX35LG /002 packaged , itiA V q S=-2V V d S=3V FHX35X /002 FHX35LG /002 Min. 15 45 -0.2 Limits Min. 40 60 -1.0 10 0.27 , ts FHX35X /002 FHX35LG /002 Low Noise HEM T Fig. 1 Drain Current vs. Drain-Source Voltage , . FUJITSU D a ta s h e e ts [2 4 L ightw ave C om ponents & M odules C atalog Low Noise HEMT FHX35X


OCR Scan
PDF FHX35X/002 FHX35LG/002 FHX35LG/002 35LG/002 35X/0 HX35LGI002 fujitsu hemt FHX35LG low noise hemt transistor LOW HEMT
2004 - FHX35

Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Text: FHX35X /002 FHX35LG /002 Low Noise HEMT DESCRIPTION The FHX35X /002 Chip and FHX35LG /002 packaged , 20 nA Gate-Source Capacitance CGS FHX35X /002 - 0.27 - FHX35LG /002 - , =10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X /002 FHX35LG /002 Low Noise HEMT Fig. 2 , -0.8V 0.5 FHX35LG /002 0.4 0.3 FHX35X /002 -1.0V 0 1 2 0.2 3 Drain-source , FHX35X /002 FHX35LG /002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to


Original
PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 Co4888 FHX35 eudyna FHX35LG hemt low noise die fujitsu gaas fet
FHX35

Abstract: FHX35LG 12GHZ FHX06FA FHX15FA FHX16FA
Text: 11.50 VDS=2V, lDS=10mA, 12GHZ • FHX35LG ®É : SHF «¡Sftií m : mmmmuo ¡stMm. «ig


OCR Scan
PDF FHX06FA 12GHz 10raA. FHX15FA 10IIA 10raA MFGI100 FHX35 FHX35LG 12GHZ FHX06FA FHX16FA
FHX35LG

Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: Dissipation Pt* 290 mW Storage Temperature FHX35LG Tstg -65 to+175 °C FHX35LP -65 to+150 °C Channel Temperature FHX35LG TCh 175 °C FHX35LP 150 °C *Note: Mounted on Al203 board (30 x 30 x 0.65mm) Fujitsu , -107.4 .127 -110.9 .547 124.3 Fujfrsu FHX35LG /LP Super Low Noise HEMT S-PARAMETERS FHX35LP VDS = 3V , Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG /LP is a High Electron Mobility , performance. FHX35LG /LP Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta


OCR Scan
PDF 12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
FLC301XP

Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25 C) VDS (V) VOS 00 Recommended Pt (W) Maximum Operating Tc=25°C Voltage (V) PART NO. FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Rth (°C/W) o HI (fi* Tch (°C) 3.5 3.5 3.5 3.5 3.5 4.0 3.5 3.5 3.5 12 12 12 15 15 15 15 15 15 15 15 15 12 12 12 12 -3 -3 -3 -3 -3


OCR Scan
PDF FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151
FSX52WF

Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG * FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs


OCR Scan
PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
1998 - FHX35LG

Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
Text: FHX35X /002 FHX35LG /002 Low Noise HEMT DESCRIPTION The FHX35X /002 Chip and FHX35LG /002 packaged , VDS=3V IDS=10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X /002 FHX35LG /002 Low Noise , 30 -0.4V 20 -0.6V 10 -0.8V 0.5 FHX35LG /002 0.4 0.3 FHX35X /002 -1.0V 0 1 2 , Gate-Source Voltage (V) 2 FHX35X /002 FHX35LG /002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs , Layout FHX35X /002 3 FHX35X /002 FHX35LG /002 Low Noise HEMT Case Style "LG" Metal-Ceramic


Original
PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die
FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1 CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: FHX35X FHX45X FHR02X FHR20X FHX04/05/06X FSX017X FSX52X FLK052XV FLR056XV CO Q _ c 15 FLX252XV , 324 Application Notes APPLICATION NOTES FHR02X, FHX04/05/06X FHX13X/14X, FHX35X , FHX45X FHR20X , 0.3 0.0275 4 4 4 10 800 EQUIVALENT CIRCUIT VALUES - HEMTs CIRCUIT ELEMENT 1 FHX35X FHX04X/05X/06X , FHX35X /LG FHX45X FHX13X/LG FHX14X/LG FHX04X/LG FHX05X/LG FHX06X/LG FHR02X FHR20X FSX017X/LG/WF FSX51X/FH


OCR Scan
PDF
FSX51

Abstract: fld3c2pj FMM362HE FLD5F6CX Fujitsu FLD5F6CX FRM5W231DR FLD148G3NL 382CG FLD150F5CN fld3f
Text: q s =3V lDS=20mA VGS=-2V VDS=3V lDS=20mA VDS=3V lD S = 1 0 m A FHX35LG /002 60 (VDS=2V) 60 (VDS=2V) 10 i j 10 0.47 0.035 Packaged HEMT FHX35X /002 0.27 0.035 HEMT Chip


OCR Scan
PDF 14-pin 4001EH 4002EH 4004EK 622Mb/s 4005EK FSX51 fld3c2pj FMM362HE FLD5F6CX Fujitsu FLD5F6CX FRM5W231DR FLD148G3NL 382CG FLD150F5CN fld3f
2004 - Not Available

Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB (Typ , for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility , Noise Figure FHX35X Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip , . Edition 1.3 October 2004 1 FHX35X GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs , (dB) IDS=30mA 10 Ga (max) & |S21|2 vs. FREQUENCY FHX35X NOISE PARAMETERS VDS=3V, IDS


Original
PDF FHX35X 12GHz FHX35X 2-18GHz
2004 - FHX35LP

Abstract: FHX35LG WG 924 FHX35
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) 1 Unit mA mS V V FHX35LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


Original
PDF FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35
1998 - low noise hemt

Abstract: lg s12 WG 924 FHX35LG PT 4304 a transistor fujitsu hemt
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) 1 Unit mA mS V V FHX35LG Super , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


Original
PDF FHX35LG 12GHz FHX35LG 2-18GHz FCSI0598M200 low noise hemt lg s12 WG 924 PT 4304 a transistor fujitsu hemt
2004 - fujitsu hemt

Abstract: FHX35X rm 702 627
Text: FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High , Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended , = 3V IDS = 10mA f = 12GHz Thermal Resistance Rth Channel to Case Noise Figure FHX35X , FHX35X GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 50 VGS , (max) & |S21|2 vs. FREQUENCY FHX35X NOISE PARAMETERS VDS=3V, IDS=10mA opt (MAG) (ANG) 15 0


Original
PDF FHX35X 12GHz FHX35X 2-18GHz Power4888 fujitsu hemt rm 702 627
fhx35lg

Abstract: No abstract text available
Text: FHX35LG Low Noise H E M l ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on AI2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable , (dB) rv> CO ß° O 0) w < (0 D (/> Associated Gain (dB) IO FHX35LG Low Noise H L M , FHX35LG Low Noise H E M T S-PARAMETERS FREQUENCY (MHZ) 100 500 1000 2000 3000 4000 5000 6000 7000


OCR Scan
PDF FHX35LG 4000Q. fhx35lg
1998 - GaAs FET HEMT Chips

Abstract: FHX35X high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35
Text: FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High , Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended , = 3V IDS = 10mA f = 12GHz Thermal Resistance Rth Channel to Case Noise Figure FHX35X , FHX35X GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 50 VGS , (max) & |S21|2 vs. FREQUENCY FHX35X NOISE PARAMETERS VDS=3V, IDS=10mA opt (MAG) (ANG) 15 0


Original
PDF FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 GaAs FET HEMT Chips high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35
Supplyframe Tracking Pixel